VN10KN3-G P003 - SUPERTEX - Datasheet.Live

Supertex inc.

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

VN10K

Features

►Free from secondary breakdown

►Low power drive requirement

►Ease of paralleling

►Low CISS and fast switching speeds

►Excellent thermal stability

►Integral source-drain diode

►High input impedance and high gain

Applications

►Motor controls

►Converters

►Ampliers

►Switches

►Power supply circuits

►Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

General Description

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven, silicon-

gate manufacturing process. This combination produces a

device with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature

coefcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

N-Channel Enhancement-Mode

Vertical DMOS FET

Ordering Information

Device

Package BVDSS/BVDGS

(V)

RDS(ON)

(max)

(Ω)

ID(ON)

(min)

(mA)

TO-92

VN10K VN10KN3-G 60 5.0 750

Pin Conguration

TO-92 (N3)

GATE

SOURCE

DRAIN

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiVN

10K

YYWW

TO-92 (N3)

Product Marking

Package may or may not include the following marks: Si or

Parameter Value

Drain-to-source voltage BVDSS

Drain-to-gate voltage BVDGS

Gate-to-source voltage ±30V

Operating and storage temperature -55OC to +150OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Absolute Maximum Ratings

For packaged products, -G indicates package is RoHS compliant (‘Green’).

Consult factory for die / wafer form part numbers.

Refer to Die Specication VF21 for layout and dimensions.

2

VN10K

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Electrical Characteristics (TA = 25OC unless otherwise specied)

Sym Parameter Min Typ Max Units Conditions

BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 100µA

VGS(th) Gate threshold voltage 0.8 - 2.5 V VGS = VDS, ID= 1.0mA

ΔVGS(th) Change in VGS(th) with temperature - -3.8 - mV/OC VGS = VDS, ID= 1.0mA

IGSS Gate body leakage - - 100 nA VGS = 15V, VDS = 0V

IDSS Zero gate voltage drain current

- - 10

µA

VGS = 0V, VDS = 45V

- - 500 VGS = 0V, VDS = 45V,

TA = 125°C

ID(ON) On-state drain current 0.75 - - A VGS = 10V, VDS = 10V

RDS(ON) Static drain-to-source on-state resistance - - 7.5 ΩVGS = 5.0V, ID = 200mA

- - 5.0 VGS = 10V, ID = 500mA

ΔRDS(ON) Change in RDS(ON) with temperature - 0.7 - %/OC VGS = 10V, ID = 500mA

GFS Forward transductance 100 - - mmho VDS = 10V, ID = 500mA

CISS Input capacitance - 48 60

pF

VGS = 0V,

VDS = 25V,

f = 1.0MHz

COSS Common source output capacitance - 16 25

CRSS Reverse transfer capacitance - 2.0 5.0

t(ON) Turn-on time - - 10

ns

VDD = 15V,

ID = 600mA,

RGEN = 25Ω

t(OFF) Turn-off time - - 10

VSD Diode forward voltage drop - 0.8 - V VGS = 0V, ISD = 500mA

trr Reverse recovery time - 160 - ns VGS = 0V, ISD = 500mA

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Notes:

† ID (continuous) is limited by max rated Tj . (VN0106N3 can be used if an ID (continuous) of 500mA is needed.)

Thermal Characteristics

Package

ID

(continuous)†

(mA)

ID

(pulsed)

(A)

Power Dissipation

@TC = 25OC

(W)

θjc

(OC/W)

θja

(OC/W)

IDR

†

(mA)

IDRM

(A)

TO-92 310 1.0 1.0 125 170 310 1.0

Switching Waveforms and Test Circuit

90%

10%

90% 90%

10%

Pulse

Generator

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

r

INPUT

OUTPUT

10V

VDD

R

GEN

0V

t

f

3

VN10K

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Typical Performance Curves

Output Characteristics

1.0

0.8

0.6

0.4

0.2

0

V

DS

(volts)

I

D

(amperes)

Saturation Characteristics

1.0

0.8

0.6

0.4

0.2

0

Maximum Rated Safe Operating Area

1.0 10 100 1000

10

1.0

0.1

0.01

V

DS

(volts)

Switching Waveform

10

5.0

0

15

10

5.0

0

0 10 20 30 40 50

t – Time (ns)

Transconductance vs. Drain Current

250

200

150

100

50

0

0 200 400 600 800 1000

G

FS

(m )

I

D

(mA)

Power Dissipation vs. Case Temperature

0 25 50 75 100 125 150

2.0

1.0

0

T

C

(

O

C)

P

D

(watts)

TO-92

V

DS

= 10V

300µs, 2%

Duty Cycle,

Pulse Test

TO-92 (DC)

0 10 20 30 40 50

6V

5V

4V

2V

0 2.0 4.0 6.0 8.0 10

6V

4V

2V

3V

Ω

Output Voltage

(volts)

5V

3V

9V

8V

7V

TC = 25OC

V

DS

(volts)

I

D

(amperes)

VGS = 10V

Input Voltage

(volts)

I

D

(amperes)

VGS = 10V

7V8V

4

VN10K

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Typical Performance Curves (cont.)

Transconductance vs Gate-Source Voltage

Gfs (m )

ID (amperes)

GFS (mhos)

Output Conductance vs Drain Current

On-Resistance vs. Gate-to-Source Voltage

RDS(ON) (ohms)

BVDSS (normalized)

Tj (OC)

Transfer Characteristics

ID (amperes)

Capacitance vs. Drain-to-Source Voltage

50

40

30

20

10

0

C (picofarads)

VDS (volts)

VGS (volts)

BVDSS Variation with Temperature

0 10 20 30 40 50

0 2.0 4.0 6.0 8.0 10

-50 0 50 100 150

1.1

1.0

0.9

100

10

1.01.0 10 100

1.0

0.8

0.6

0.4

0.2

0

250

200

150

100

50

0

Ω

VGS (volts)

1.0

0.1

0.01

0.01 0.1 1.0

VDS = 0.1V

Reduction

Due to

Heating

VDS = 25V

80µs, 1%

Duty Cycle,

Pulse Test

VDS = 10V

3000µs, 2%

Duty Cycle

Pulse Test

CISS

C

OSS

CRSS

VGS (volts)

VDS = 10V

300µs, 2%

Duty Cycle,

Pulse Test

0 2.0 4.0 6.0 8.0 10

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA

94089

Tel: 408-222-8888

www

.supertex.com

5

VN10K

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Doc.# DSFP-VN10K

B031411

3-Lead TO-92 Package Outline (N3)

Symbol A b c D E E1 e e1 L

Dimensions

(inches)

MIN .170 .014†.014†.175 .125 .080 .095 .045 .500

NOM - - - - - - - - -

MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*

JEDEC Registration TO-92.

* This dimension is not specied in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

Seating

Plane

1

2

3

Front View Side View

Bottom View

E1 E

D

e1

L

e

c

1 2 3

b

A