END OF LIFE IRF7404QPbF HEXFET(R) Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance P Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS(on) = 0.040 Top View Description These HEXFET(R) Power MOSFET's in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. IRF7404QPbF Standard Pack Package Type Form Quantity EOL Notice IRF7404QTRPbF SO-8 Tape and Reel 4000 EOL 527 IRF7404QPbF SO-8 Tube 95 EOL 529 Base part number Orderable part number SO-8 Replacement Part Number Please search the EOL part number on IR's website for guidance Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Max. 10 Sec. Pulsed Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units -7.7 -6.7 -5.4 -27 2.5 0.02 12 -5.0 -55 to + 150 A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA www.irf.com Maximum Junction-to-Ambient Typ. Max. Units 50 C/W 1 02/10/15 IRF7404QPbF END OF LIFE Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Min. -20 -0.70 6.8 Typ. Max. Units Conditions V V GS = 0V, ID = -250A -0.012 V/C Reference to 25C, ID = -1mA 0.040 V GS = -4.5V, ID = -3.2A 0.060 V GS = -2.7V, ID = -2.7A V V DS = VGS, ID = -250A S V DS = -15V, ID = -3.2A -1.0 V DS = -16V, VGS = 0V A -25 V DS = -16V, VGS = 0V, TJ = 125C -100 V GS = -12V nA 100 V GS = 12V 50 I D = -3.2A 5.5 nC V DS = -16V 21 V GS = -4.5V, See Fig. 6 and 12 14 V DD = -10V 32 I D = -3.2A ns 100 R G = 6.0 65 R D = 3.1, See Fig. 10 Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance 2.5 LS Internal Source Inductance 4.0 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 1500 730 340 IGSS D nH Between lead tip and center of die contact pF V GS = 0V V DS = -15V = 1.0MHz, See Fig. 5 G S Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units -3.1 -27 69 71 -1.0 100 110 A V ns C Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, I F = -3.2A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -3.2A, di/dt -65A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. TJ 150C 2 www.irf.com END OF LIFE 1000 IRF7404QPbF 1000 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V -ID , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 10 -1.5V 1 20s PULSE WIDTH TJ = 25C A 0.1 0.01 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP TOP 0.1 1 10 100 10 -1.5V 1 20s PULSE WIDTH TJ = 150C 0.1 0.01 100 0.1 Fig 1. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) TJ = 25C TJ = 150C 10 VDS = -15V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 100 Fig 2. Typical Output Characteristics 100 1.5 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 1 5.0 A I D = -5.3A 1.5 1.0 0.5 VGS = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 END OF LIFE IRF7404QPbF 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 3000 Ciss 2000 Coss 1000 Crss 0 1 10 100 I D = -3.2A VDS = -16V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 12 0 A 0 10 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 40 50 60 A Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150C 10 -IID , Drain Current (A) -I SD , Reverse Drain Current (A) 30 Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) TJ = 25C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -V SD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 1.6 1ms 10 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com END OF LIFE IRF7404QPbF 8.0 V DS D.U.T. V GS -ID , Drain Current (A) RD RG 6.0 A V + DD -4.5V Pulse Width 1s Duty Factor 0.1% 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7404QPbF END OF LIFE Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F -4.5 V QGS VGS VG -3mA Charge Fig 12a. Basic Gate Charge Waveform 6 D.U.T. QGD +VDS IG ID Current Sampling Resistors Fig 12b. Gate Charge Test Circuit www.irf.com END OF LIFE IRF7404QPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + ** RG + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS* - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V [ ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [ Re-Applied Voltage Body Diode VDD ] Forward Drop Inductor Curent Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS www.irf.com 7 END OF LIFE IRF7404QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 1 2 3 0.25 [.010] 4 A MAX MIN .0532 .0688 1.35 1.75 A1 .0040 6X e1 8X b 0.25 [.010] A A1 MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC e1 e MILLIMETERS MIN A E INCHES DIM B H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = ASS EMBLY S IT E CODE LOT CODE PART NUMBER Notes: 1. For an Automotive Qualified version of this part please see : http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com END OF LIFE IRF7404QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF7404QPbF END OF LIFE Qualification Information Industrial Qualification level (per JEDEC JESD47Fguidelines) Moisture Sensitivity Level MSL1 SO-8 (per JEDEC J-STD-020D) Yes RoHS Compliant Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Revision History Date 2/10/2015 Comments * Added ordering information to reflect the End-Of-life IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com