IRF7404QPBF - INFINEON TECHNOLOGIES AG

HEXFET® Power MOSFET

IRF7404QPbF

Top View

VDSS = -20V

RDS(on) = 0.040Ω

Parameter Max. Units

ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -4.5V -7.7

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -6.7

ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -5.4

IDM Pulsed Drain Current -27

PD @TA = 25°C Power Dissipation 2.5 W

Linear Derating Factor 0.02 W/°C

VGS Gate-to-Source Voltage ± 12 V

dv/dt Peak Diode Recovery dv/dt -5.0 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Absolute Maximum Ratings

02/10/15

Thermal Resistance Ratings

Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient 50 °C/W

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lAdvanced Process Technology

lUltra Low On-Resistance

lP Channel MOSFET

lSurface Mount

lAvailable in Tape & Reel

l150°C Operating Temperature

lLead-Free

Description

These HEXFET® Power MOSFET's in package utilize the

lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

HEXFET Power MOSFET's are a 150°C junction operating

temperature, fast switching speed and improved repetitive

avalanche rating. These benefits combine to make this

design an extremely efficient and reliable device for use in

a wide variety of applications.

The efficient SO-8 package provides enhanced thermal

characteristics making it ideal in a variety of power

applications. This surface mount SO-8 can dramatically

reduce board space and is also available in Tape & Reel.

SO-8

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Form Quantity

IRF7404QTRPbF SO-8 Tape and Reel 4000 EOL 527

IRF7404QPbF SO-8 Tube 95 EOL 529

IRF7404QPbF Please search the EOL part number on IR’s website for

guidance

Base part number Package

Type

Standard Pack EOL

Notice

Ordera ble part numbe r Replacement Part Number

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Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -20   V VGS = 0V, ID = -250µA

ΔV(BR)DSS/ΔT

JBreakdown Voltage Temp. Coefficient  -0.012  V/°C Reference to 25°C, ID = -1mA

  0.040 VGS = -4.5V, ID = -3.2A 

  0.060 VGS = -2.7V, ID = -2.7A 

VGS(th) Gate Threshold Voltage -0.70   V VDS = VGS, ID = -250µA

gfs Forward Transconductance 6.8   S VDS = -15V, ID = -3.2A

  -1.0 VDS = -16V, VGS = 0V

  -25 VDS = -16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage   -100 VGS = -12V

Gate-to-Source Reverse Leakage   100 VGS = 12V

QgTotal Gate Charge   50 ID = -3.2A

Qgs Gate-to-Source Charge   5.5 nC VDS = -16V

Qgd Gate-to-Drain ("Miller") Charge   21 VGS = -4.5V, See Fig. 6 and 12 

td(on) Turn-On Delay Time  14  VDD = -10V

trRise Time  32  ID = -3.2A

td(off) Turn-Off Delay Time  100  RG = 6.0Ω

tfFall Time  65  RD = 3.1Ω, See Fig. 10 

Between lead tip

and center of die contact

Ciss Input Capacitance  1500  VGS = 0V

Coss Output Capacitance  730  pF VDS = -15V

Crss Reverse Transfer Capacitance  340   = 1.0MHz, See Fig. 5

Notes:

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage   -1.0 V TJ = 25°C, IS = -2.0A, VGS = 0V 

trr Reverse Recovery Time  69 100 ns TJ = 25°C, IF = -3.2A

Qrr Reverse RecoveryCharge  71 110 µC di/dt = 100A/µs 

ton Forward Turn-On Time

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ -3.2A, di/dt ≤ -65A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

  -27

  -3.1

IGSS

IDSS Drain-to-Source Leakage Current

LSInternal Source Inductance  4.0 

LDInternal Drain Inductance  2.5 

µA

RDS(ON) Static Drain-to-Source On-Resistance

 Surface mounted on FR-4 board, t ≤ 10sec.

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Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

T = 25°C

T = 150°C

-I , Drain-to-Source Current (A)

-V , Gate-to-Source Voltage (V)

V = -15V

20μs PULSE WIDTH

0.1

100

1000

0.01 0.1 1 10 100

20μs PULSE WIDTH

T = 150°C

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

BOTTOM - 1.5V

-1.5V

0.1

100

1000

0.01 0.1 1 10 100

20μs PULSE WIDTH

T = 25°C

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

BOTTOM - 1. 5V

-1.5V

0.0

0.5

1.0

1.5

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

R , Drain-to-Source On Resistance

DS(on)

(Normalized)

I = -5.3A

V = -4.5V

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100

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

= 150 C

= 25 C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

1ms

10ms

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0.1

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

T = 25°C

T = 150°C

V = 0V

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

1000

2000

3000

1 10 100

C, Capacitance (pF)

-V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0 102030405060

FOR TEST CIRCUIT

SEE FIGURE 12

-V , Gate-to-Source Voltage (V)

Q , Total Gate Charge (nC)

I = -3.2A

V = -16V

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0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

D.U.T.

-4.5V

Pulse Width

≤

1μs

Duty Factor

≤

0.1%

25 50 75 100 125 150

0.0

2.0

4.0

6.0

8.0

T , Case Temperature ( C)

-I , Drain Current (A)

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Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit

Charge

D.U.T. V

-3mA

.3μF

50KΩ

.2μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

-4.5 V

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P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period







VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

VGS*

Peak Diode Recovery dv/dt Test Circuit

[ ]

Fig 13. For P-Channel HEXFETS

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

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SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BAS IC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MI N MAX

MILLIMETERSINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

8X b

0.10 [.004]

4312

F OOT P R I N T

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OU T L I NE CON F OR MS T O JE DE C OU T L I N E MS -012 AA.

NOT ES :

1. DIMENS IONING & TOL ERANCING PER ASME Y14.5M-1994.

2. CONT ROL LING DIME NS ION: MILLIME T ER

3. DIME NS IONS ARE S HOWN IN MILL IMET E RS [INCHE S ].

5 DIME NS ION DOE S NOT INCL UDE MOLD PROT RU S IONS .

6 DIME NS ION DOE S NOT INCL UDE MOLD PROT RU S IONS .

MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].

7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBST RAT E.

MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070]

DAT E CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

Y = LAST DIGIT OF THE YEAR

PART NUMBER

LOT CODE

WW = WE E K

EXAMPLE: T HIS IS AN IRF7101 (MOS F ET )

P = DE S I GNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

A = AS S E MB L Y S IT E CODE

Notes:

1. For an Automotive Qualified version of this part please see : http://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF7404QPbF

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330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF7404QPbF

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† Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release.

MSL1

(per JEDEC J-STD-020D

††

)

RoHS Compliant

Qualification Information

†

Qualification level Industrial

†

(per JEDEC JESD47F

††

guidelines)

Yes

Moisture Sensitivity Level SO-8

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

Date Comments

2/10/2015 • Added ordering information to reflect the End-Of-life

Revision History