MMBT918L - ON Semiconductor

 Semiconductor Components Industries, LLC, 2004

May, 2004 − Rev. 4 1Publication Order Number:

MMBT918LT1/D

MMBT918LT1

VHF/UHF Transistor

NPN Silicon

Features

•Pb−Free Package is Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 15 Vdc

Collector−Base Voltage VCBO 30 Vdc

Emitter−Base Voltage VEBO 3.0 Vdc

Collector Current − Continuous IC50 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction to Ambient RJA 556 °C/W

Total Device Dissipation

Alumina Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient RJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to

+150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

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Device Package Shipping†

ORDERING INFORMATION

MMBT918LT1 SOT−23 3000 / Tape & Reel

MMBT918LT1G SOT−23

(Pb−Free)

SOT−23 (TO−236AF)

CASE 318

Style 6

3000 / Tape & Reel

MARKING

DIAGRAM

M3B

M3B = Specific Device Code

COLLECTOR

BASE

EMITTER

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT918LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 3.0 mAdc, IB = 0) V(BR)CEO 15 − Vdc

Collector−Base Breakdown Voltage

(IC = 1.0 Adc, IE = 0) V(BR)CBO 30 − Vdc

Emitter−Base Breakdown Voltage

(IE = 10 Adc, IC = 0) V(BR)EBO 3.0 − Vdc

Collector Cutoff Current

(VCB = 15 Vdc, IE = 0) ICBO − 50 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 3.0 mAdc, VCE = 1.0 Vdc) hFE 20 − −

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.4 Vdc

Base−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) − 1.0 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) fT600 − MHz

Output Capacitance

(VCB = 0 Vdc, IE = 0, f = 1.0 MHz)

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo −

−3.0

1.7

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 2.0 pF

Noise Figure

(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 , f = 60 MHz) (Figure 1) NF − 6.0 dB

Power Output

(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) Pout 30 − mW

Common−Emitter Amplifier Power Gain

(IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) Gpe 11 − dB

MMBT918LT1

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Figure 1. NF, G

e Measurement Circuit 20−200

VBB VCC

EXTERNAL

100 k

0.018 F

1000 pF BYPASS

0.018 F

50 

NF TEST CONDITIONS

IC = 1.0 mA

VCE = 6.0 VOLTS

RS = 50 

f = 60 MHz

Gpe TEST CONDITIONS

IC = 6.0 mA

VCE = 12 VOLTS

f = 200 MHz

MMBT918LT1

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PACKAGE DIMENSIONS

DIM

MIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0350 0.0440 0.89 1.11

D0.0150 0.0200 0.37 0.50

G0.0701 0.0807 1.78 2.04

H0.0005 0.0040 0.013 0.100

J0.0034 0.0070 0.085 0.177

K0.0140 0.0285 0.35 0.69

L0.0350 0.0401 0.89 1.02

S0.0830 0.1039 2.10 2.64

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD

318−08.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOT−23 (TO−236)

CASE 318−08

ISSUE AH

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

mm

inches

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

MMBT918LT1/D

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