GC2X10MPS12-247 1200V 20A SiC Schottky MPSTM Diode VRRM IF (Tc = 100 C) QC Silicon Carbide Schottky Diode Features = = = 1200 V 56 A * 54 nC * Package * High Avalanche (UIS) Capability * Enhanced Surge Current Capability * Superior Figure of Merit QC/IF * Low Thermal Resistance * 175 C Maximum Operating Temperature * Temperature Independent Switching Behavior * Positive Temperature Coefficient of VF * Extremely Fast Switching Speed Case Case Case A A K A K A TO-247-3 Advantages Applications * Low Standby Power Losses * Improved Circuit Efficiency (Lower Overall Cost) * Low Switching Losses * Ease of Paralleling without Thermal Runaway * Smaller Heat Sink Requirements * Low Reverse Recovery Current * Low Device Capacitance * Low Reverse Leakage Current * Boost Diode in Power Factor Correction (PFC) * Switched Mode Power Supply (SMPS) * Uninterruptible Power Supply (UPS) * Motor Drives * Freewheeling / Anti-parallel Diode in Inverters * Solar Inverters * Electric Vehicles (EV) & DC Fast Charging * Induction Heating & Welding Absolute Maximum Ratings (At TC = 25 C Unless Otherwise Stated) Parameter Symbol Repetitive Peak Reverse Voltage (Per Leg) Continuous Forward Current (Per Leg / Per Device) VRRM TC = 161 C, D = 1 10 / 20 TC = 25 C, tP = 10 ms 80 TC = 150 C, tP = 10 ms 64 TC = 25 C, tP = 10 ms 48 TC = 150 C, tP = 10 ms 34 TC = 25 C, tP = 10 s 400 A i dt TC = 25 C, tP = 10 ms 32 A2s EAS L = 3 mH, IAS = 10 A 150 mJ dV/dt VR = 0 ~ 960 V 200 V/ns Ptot TC = 25 C 214 / 428 W -55 to 175 C IF,RM Non-Repetitive Peak Forward Surge Current (Per Leg) IF,max 2 Operating and Storage Temperature V 28 / 56 Repetitive Peak Forward Surge Current, Half Sine Wave (Per Leg) Power Dissipation (Per Leg / Per Device) 1200 41 / 82 IF,SM Non-Repetitive Avalanche Energy (Per Leg) Diode Ruggedness (Per Leg) Unit TC = 25 C, D = 1 Non-Repetitive Peak Forward Surge Current, Half Sine Wave (Per Leg) i t Value (Per Leg) Values TC = 100 C, D = 1 IF 2 Conditions Tj , Tstg A A A * Per Device April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 1 of 7 GC2X10MPS12-247 1200V 20A SiC Schottky MPSTM Diode Electrical Characteristics (Per Leg) Parameter Symbol Diode Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Switching Time ts Total Capacitance C Conditions Values Min. Typ. Max. IF = 10 A, Tj = 25 C 1.5 1.8 IF = 10 A, Tj = 175 C 2 2.4 VR = 1200 V, Tj = 25 C 1 5 VR = 1200 V, Tj = 175 C 10 50 IF IF,MAX dIF/dt = 200 A/s Tj = 175 C VR = 400 V 19 VR = 800 V 27 VR = 400 V VR = 800 V 616 VR = 800 V, f = 1 MHz 40 V A nC < 10 VR = 1 V, f = 1 MHz Unit ns pF Thermal / Mechanical Characteristics Thermal Resistance, Junction - Case RthJC 0.70 C/W Weight WT 6.1 g Mounting Torque TM April 2019 Rev1.3 M3 Screw www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf 1.1 Nm Page 2 of 7 GC2X10MPS12-247 1200V 20A SiC Schottky MPSTM Diode 20 100 175 oC 175 oC 15 80 150 oC 150 oC 125 oC 125 oC 60 75 oC 10 75 oC 25 oC 25 oC 40 5 20 0 0 0 1 2 3 Forward Voltage, V F (V) 0 4 2 4 6 8 Forward Voltage, V F (V) IF = f(VF,Tj); tP = 250 s IF = f(VF,Tj); tP = 250 s Figure 1: Typical Forward Characteristics (Per Leg) Figure 2: Typical High Current Forward Characteristics (Per Leg) 250 10-5 175 oC 150 oC 125 oC 10 -6 10 200 75 oC 150 25 oC 10-7 100 10-8 10-9 200 50 0 400 600 800 1000 1200 Reverse Voltage, V R (V) 25 50 75 100 125 150 Case Temperature, T C (oC) IR = f(VR,Tj) Ptot = f(Tc); Tj = 175 C Figure 3: Typical Reverse Characteristics (Per Leg) Figure 4: Power Derating Curve (Per Leg) April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf 175 Page 3 of 7 GC2X10MPS12-247 1200V 20A SiC Schottky MPSTM Diode 150 800 D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.7 D=1 100 600 400 50 200 0 25 50 75 100 125 150 Case Temperature, T C (oC) 175 0 0.1 1 10 100 Reverse Voltage, V R (V) 1000 IF = f(TC); D = tP/T; Tj = 175 C C = f(VR); f = 1 MHz Figure 5: Current Derating Curves (Per Leg) Figure 6: Typical Junction Capacitance vs. Reverse Voltage Characteristics (Per Leg) 40 20 30 10 20 10 0 0 0 300 600 900 Reverse Voltage, V R (V) 1200 0 300 600 900 Reverse Voltage, V R (V) 1200 Qc = f(VR); f = 1 MHz EC = f(VR); f = 1 MHz Figure 7: Typical Capacitive Charge vs. Reverse Voltage Characteristics (Per Leg) Figure 8: Typical Capacitive Energy vs. Reverse Voltage Characteristics (Per Leg) April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 4 of 7 GC2X10MPS12-247 Transient Thermal Impedance, Z th,jc (o C/W 1200V 20A SiC Schottky MPSTM Diode Zth,jc = f(tP,D); D = tP/T Figure 9: Transient Thermal Impedance (Per Leg) IF = (VF - VBI)/RDIFF (A) Built-In Voltage (VBI): VBI(Tj) = m*Tj + n (V), m = -1.42e-03, n = 0.98 Differential Resistance (RDIFF): RDIFF(Tj) = a*Tj2 + b*Tj + c (); a = 1.33e-06, b = 1.44e-05, c = 0.047 IF = f(VF, Tj) Figure 10: Forward Curve Model (Per Leg) April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 5 of 7 GC2X10MPS12-247 1200V 20A SiC Schottky MPSTM Diode Package Dimensions TO-247-3 Package Outline Recommended Solder Pad Layout NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 6 of 7 GC2X10MPS12-247 1200V 20A SiC Schottky MPSTM Diode RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links * * * * * SPICE Models: https://www.genesicsemi.com/schottky-mps Evaluation Boards: https://www.genesicsemi.com/technical-support Quality Manual: https://www.genesicsemi.com/technical-support/quality-manual Compliance: https://www.genesicsemi.com/technical-support/compliance Reliability Report: https://www.genesicsemi.com/technical-support/reliability www.genesicsemi.com/schottky-mps Copyright (c) 2019 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice April 2019 Rev1.3 Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 Page 7 of 7