GC2X10MPS12-247
1200V 20A SiC Schottky MPS™ Diode
April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 1 of 7
Silicon Carbide Schottky Diode
Features Package
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• Superior Figure of Merit QC/IF
• Low Thermal Resistance
• 175 °C Maximum Operating Temperature
• Temperature Independent Switching Behavior
• Positive Temperature Coefficient of VF
• Extremely Fast Switching Speed
TO-247-3
Advantages Applications
• Low Standby Power Losses
• Improved Circuit Efficiency (Lower Overall Cost)
• Low Switching Losses
• Ease of Paralleling without Thermal Runaway
• Smaller Heat Sink Requirements
• Low Reverse Recovery Current
• Low Device Capacitance
• Low Reverse Leakage Current
• Boost Diode in Power Factor Correction (PFC)
• Switched Mode Power Supply (SMPS)
• Uninterruptible Power Supply (UPS)
• Motor Drives
• Freewheeling / Anti-parallel Diode in Inverters
• Solar Inverters
• Electric Vehicles (EV) & DC Fast Charging
• Induction Heating & Welding
Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated)
Parameter Symbol Conditions Values Unit
Repetitive Peak Reverse Voltage
(Per Leg) VRRM 1200 V
Continuous Forward Current
(Per Leg / Per Device) IF
TC= 25 °C, D = 1 41 / 82
A
TC = 100 °C, D = 1 28 / 56
TC = 161 °C, D = 1 10 / 20
Non-Repetitive Peak Forward Surge
Current, Half Sine Wave (Per Leg) IF,SM TC= 25 °C, tP = 10 ms 80 A
TC= 150 °C, tP = 10 ms 64
Repetitive Peak Forward Surge Current,
Half Sine Wave (Per Leg) IF,RM TC= 25 °C, tP = 10 ms 48 A
TC= 150 °C, tP = 10 ms 34
Non-Repetitive Peak Forward Surge
Current (Per Leg) IF,max T
C = 25 °C, tP = 10 µs 400 A
i2t Value (Per Leg) ∫i2dt TC= 25 °C, tP = 10 ms 32 A2s
Non-Repetitive Avalanche Energy
(Per Leg) EAS L = 3 mH, IAS = 10 A 150 mJ
Diode Ruggedness (Per Leg) dV/dt VR= 0 ~ 960 V 200 V/ns
Power Dissipation (Per Leg / Per Device) Ptot T
C= 25 °C 214 / 428 W
Operating and Storage Temperature Tj , Tstg -55 to 175 °C
* Per Device
VRRM = 1200 V
IF (Tc = 100 °C) = 56 A *
QC = 54 nC *
Case
A K A
Case
Case
A
K
A
GC2X10MPS12-247
1200V 20A SiC Schottky MPS™ Diode
April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 2 of 7
Electrical Characteristics (Per Leg)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Diode Forward Voltage VF IF = 10 A, Tj = 25 °C 1.5 1.8 V
IF = 10 A, Tj = 175 °C 2 2.4
Reverse Current IR VR = 1200 V, Tj = 25 °C 1 5 µA
VR = 1200 V, Tj = 175 °C 10 50
Total Capacitive Charge QC IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 175 °C
VR = 400 V 19 nC
VR = 800 V 27
Switching Time ts VR = 400 V < 10 ns
VR = 800 V
Total Capacitance C VR= 1 V, f = 1 MHz 616 pF
VR= 800 V, f = 1 MHz 40
Thermal / Mechanical Characteristics
Thermal Resistance, Junction - Case RthJC 0.70 °C/W
Weight WT 6.1 g
Mounting Torque TM M3 Screw 1.1 Nm
GC2X10MPS12-247
1200V 20A SiC Schottky MPS™ Diode
April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 3 of 7
IF = f(VF,Tj); tP = 250 µs IF = f(VF,Tj); tP = 250 µs
Figure 1: Typical Forward Characteristics
(Per Leg)
Figure 2: Typical High Current Forward
Characteristics (Per Leg)
IR = f(VR,Tj) Ptot = f(Tc); Tj = 175 °C
Figure 3: Typical Reverse Characteristics
(Per Leg) Figure 4: Power Derating Curve (Per Leg)
0
5
10
15
20
Forward Voltage, VF(V)
01234
25oC
75oC
125oC
150oC
175oC
0
20
40
60
80
100
Forward Voltage, VF(V)
0246810
25oC
75oC
125oC
150oC
175oC
10−9
10−8
10−7
10−6
10−5
Reverse Voltage, VR(V)
200 400 600 800 1000 1200
25oC
75oC
125oC
150oC
175oC
0
50
100
150
200
250
Case Temperature, TC(oC)
25 50 75 100 125 150 175
GC2X10MPS12-247
1200V 20A SiC Schottky MPS™ Diode
April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 4 of 7
IF = f(TC); D = tP/T; Tj = 175 °C C = f(VR); f = 1 MHz
Figure 5: Current Derating Curves (Per Leg) Figure 6: Typical Junction Capacitance vs.
Reverse Voltage Characteristics (Per Leg)
Qc = f(VR); f = 1 MHz EC = f(VR); f = 1 MHz
Figure 7: Typical Capacitive Charge vs. Reverse
Voltage Characteristics (Per Leg)
Figure 8: Typical Capacitive Energy vs. Reverse
Voltage Characteristics (Per Leg)
0
50
100
150
Case Temperature, TC(oC)
25 50 75 100 125 150 175
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
0
200
400
600
800
Reverse Voltage, VR(V)
0.1 1 10 100 1000
0
10
20
30
40
Reverse Voltage, VR(V)
0 300 600 900 1200
0
10
20
Reverse Voltage, VR(V)
0 300 600 900 1200
GC2X10MPS12-247
1200V 20A SiC Schottky MPS™ Diode
April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 5 of 7
Zth,jc = f(tP,D); D = tP/T
Figure 9: Transient Thermal Impedance (Per Leg)
IF = (VF – VBI)/RDIFF (A)
Built-In Voltage (VBI):
VBI(Tj) = m*Tj + n (V),
m = -1.42e-03, n = 0.98
Differential Resistance (RDIFF):
RDIFF(Tj) = a*Tj2 + b*Tj + c (Ω);
a = 1.33e-06, b = 1.44e-05, c = 0.047
IF = f(VF, Tj)
Figure 10: Forward Curve Model (Per Leg)
Transient Thermal Impedance, Z th,jc (oC/
W
GC2X10MPS12-247
1200V 20A SiC Schottky MPS™ Diode
April 2019 Rev1.3 www.genesicsemi.com/schottky_mps/GC2X10MPS12-247.pdf Page 6 of 7
Package Dimensions
TO-247-3 Package Outline
Recommended Solder Pad Layout
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
GC2X10MPS12-247
1200V 20A SiC Schottky MPS™ Diode
Copyright © 2019 GeneSiC Semiconductor Inc. All Rights Reserved
The information in this document is subject to change without notice Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
April 2019 Rev1.3 Page 7 of 7
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also
referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in
accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and
amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from
your GeneSiC representative.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European
Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the
foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC
Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license,
express or implied to any intellectual property rights is granted by this document.
Related Links
• SPICE Models: https://www.genesicsemi.com/schottky-mps
• Evaluation Boards: https://www.genesicsemi.com/technical-support
• Quality Manual: https://www.genesicsemi.com/technical-support/quality-manual
• Compliance: https://www.genesicsemi.com/technical-support/compliance
• Reliability Report: https://www.genesicsemi.com/technical-support/reliability
www.genesicsemi.com/schottky-mps