© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 15 1Publication Order Number:
MBR2535CT/D
MBR2535CTG,
MBR2545CTG
Switch‐mode
Power Rectifiers
The MBR2535CTG/45CTG series uses the Schottky Barrier
principle with a platinum barrier metal. These state-of-the-art devices
have the following features:
Features
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
These are Pb-Free Devices*
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
35 and 45 VOLTS
1
3
2, 4
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
B25x5 = Device Code
x = 3 or 4
G = Pb−Free Package
AKA = Diode Polarity
AY WW
B25x5G
AKA
Device Package Shipping
ORDERING INFORMATION
MBR2535CTG TO−220
(Pb−Free) 50 Units/Rail
MBR2545CTG TO−220
(Pb−Free) 50 Units/Rail
http://onsemi.com
TO−220
CASE 221A
STYLE 6
3
4
12
MBR2535CTG, MBR2545CTG
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR2535CTG
MBR2545CTG
VRRM
VRWM
VR35
45
V
Average Rectified Forward Current
(Rated VR, TC = 160°C)
Per Device
Per Diode
IF(AV)
30
15
A
Peak Repetitive Forward Current
per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFRM 30 A
Non-Repetitive Peak Surge Current per Diode Leg
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s
ESD Ratings:
Machine Model = C
Human Body Model = 3B
ESD > 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient (Note 2) RJC
RJA 1.5
50
°C/W
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS (Per Diode)
Symbol Characteristic Condition Min Typ Max Unit
VFInstantaneous Forward Voltage
(Note 3) IF = 15 Amp, TJ = 25°C
IF = 15 Amp, TJ = 125°C
IF = 30 Amp, TJ = 25°C
IF = 30 Amp, TJ = 125°C
0.50
0.65
0.62
0.57
0.82
0.72
V
IRInstantaneous Reverse Current
(Note 3) Rated dc Voltage, TJ = 25°C
Rated dc Voltage, TJ = 125°C
9.0 0.2
25 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
MBR2535CTG, MBR2545CTG
http://onsemi.com
3
110
TC, CASE TEMPERATURE (°C)
20
8.0
4.0
0
TA, AMBIENT TEMPERATURE (°C)
200
48
24
16
8.0
0
40
8.0 160
IF, AVERAGE FORWARD CURRENT (AMPS)
32
16
12
8.0
4.0
0
12
I
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
120 130 160 180 60 80 180
P
20 4024
28
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
4.0 28 32 36
20
24
SQUARE WAVE
dc
SQUARE WAVE
dc
16
12
24
48
28 28
20
12
4.0
100 120 140
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
RATED VR APPLIED
SQUARE WAVE
dc
RATED VOLTAGE APPLIED
RJC = 1.5°C/W
RJA = 16°C/W
(With TO-220 Heat Sink)
RJA = 60°C/W
(No Heat Sink)
SQUARE WAVE
dc
TJ = 125°C
(CAPACITATIVELOAD)
IPK
IAV
+5.0
10
20
(RESISTIVELOAD)
IPK
IAV
+
Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1000
10
VR, REVERSE VOLTAGE (VOLTS)
0
0.2
0.04
0.02
0.002
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
1.0
0.2 0.4 0.8 10 20 30 40
0.1
0.4
1.0
0.1 1.0 50
, REVERSE CURRENT (mA)
R
4.0
2.0
10
20
100
40
200
TJ = 125°C
150°C
25°C
TJ = 150°C
125°C
100°C
100
0.01
0.004
25°C
75°C
1.61.2 1.4 1.8
Figure 3. Current Derating, Per Device Figure 4. Current Derating, Per Device
Figure 5. Forward Power Dissipation
140 150 170
32
36
40
44
160
32
36
40
44
MBR2535CTG, MBR2545CTG
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MBR2535CT/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent− Marking.pdf . S CILLC reserves t he right to m ake changes wit hout further notice to any products h erein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all l iabilit y, including without limitation special, consequent ial o r incidental damages. “Typical” parameters which may be provided in SCILLC d at a s heet s
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application b y c ust omer’s technical e xperts. SCILLC does not c onvey a ny license under its p atent r ights n or t he r ights o f o t hers. S CILLC p roducts a re n ot d esigned, i ntended,
or authorized for use as c omponent s i n s yst ems i nt ended f or s urgic al i m plant i nt o the body, or other applications i nt ended to support or sustain lif e, o r f or a ny o t her a pplication i n w hich
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC an d it s officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and r easonable a ttorney f ees a rising o ut of, directly o r i ndirect ly, any claim o f p ersonal i njury or death associat ed w it h s uch u nintended o r u naut horized u se, e ven if such c laim
alleges that SCILLC was negligent regarding the d esign or manufacture of the p art. S CILLC i s a n E qual O pportunity/Af firmative Act ion Employer. This literature is subject t o a ll applicable
copyright laws and is not for resale in any manner.