AP2604Y Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Fast Switching Characteristic S Lower Gate Charge D D Small Footprint & Low Profile Package G SOT-26 BVDSS 30V RDS(ON) 45m ID 5.5A D D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID@TA=25 Continuous Drain Current3, VGS @ 4.5V 5.5 A ID@TA=70 Continuous Drain Current3, VGS @ 4.5V 4.4 A 1 IDM Pulsed Drain Current 20 A PD@TA=25 Total Power Dissipation 2 W Linear Derating Factor 0.016 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 /W 200115041 AP2604Y Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 30 - - V - 0.02 - V/ VGS=10V, ID=4.8A - - 45 m VGS=4.5V, ID=2.4A - - 65 m VDS=VGS, ID=250uA 1 - 3 V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=10V, ID=4.8A - 7 - S o VDS=30V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=24V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=4.8A - 6 10 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 8 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 15 - ns tf Fall Time RD=15 - 4 - ns Ciss Input Capacitance VGS=0V - 440 705 pF Coss Output Capacitance VDS=25V - 105 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 35 - pF Min. Typ. IS=4.8A, VGS=0V - - 1.2 V IS=4.8A, VGS=0V, - 15 - ns dI/dt=100A/s - 7 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 156/W when mounted on min. copper pad. Max. Units AP2604Y 40 35 o T A =25 C 35 10V 7.0V ID , Drain Current (A) 30 ID , Drain Current (A) T A =150 o C 30 25 5.0V 20 4.5V 15 10V 7.0V 25 5.0V 20 4.5V 15 10 10 V G =3.0V 5 V G =3.0V 5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 1 1.5 2 2.5 3 3.5 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 75 1.8 I D = 2.4 A 65 I D =4.8A V G =10V 1.6 o T A =25 C Normalized RDS(ON) RDS(ON) (m ) 0.5 55 45 1.4 1.2 1.0 35 0.8 0.6 25 3 5 7 9 -50 11 0 50 100 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 1.8 5 1.6 4 1.4 T j =150 o C VGS(th)(V) IS(A) 3 T j =25 o C 2 1.2 1 1 0.8 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 T j , Junction Temperature ( 100 o 150 C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2604Y f=1.0MHz 1000 I D =4.8A C iss V DS =15V V DS =20V V DS =24V 12 C (pF) VGS , Gate to Source Voltage (V) 16 8 C oss 100 C rss 4 0 10 0 2 4 6 8 10 12 1 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 1ms ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1 10ms 100ms 0.1 T A =25 o C Single Pulse 1s DC 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Single Pulse Rthja = 156 /W 0.001 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q