Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Fast Switching Characteristic BVDSS 30V
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▼ Lower Gate Charge RDS(ON) 45mΩ
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▼ Small Footprint & Low Profile Package ID5.5A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient3Max. 62.5 ℃/W
Data and specifications subject to change without notice
Thermal Data Parameter
Storage Temperature Range
Total Power Dissipation 2
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.016
Continuous Drain Current3, VGS @ 4.5V 4.4
Pulsed Drain Current120
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V 5.5
Parameter Rating
Drain-Source Voltage 30
200115041
AP2604Y
±20
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is universally used for all commercial-industrial
applications.
DD
DDG
S
SOT-26
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=4.8A - - 45 mΩ
VGS=4.5V, ID=2.4A - - 65 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=4.8A - 7 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=24V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge2ID=4.8A - 6 10 nC
Qgs Gate-Source Charge VDS=24V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC
td(on) Turn-on Delay Time2VDS=15V - 6 - ns
trRise Time ID=1A - 8 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 15 - ns
tfFall Time RD=15Ω-4-
ns
Ciss Input Capacitance VGS=0V - 440 705 pF
Coss Output Capacitance VDS=25V - 105 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 35 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=4.8A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=4.8A, VGS=0V, - 15 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
AP2604Y
±20V ±100
AP2604Y
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
VGS(th)(V)
25
35
45
55
65
75
357911
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
Ω
Ω
Ω
)
ID= 2.4 A
TA=25 oC
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3 3.5 4
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
10V
7.0V
5.0V
4.5V
VG=3.0V
TA=25 oC
0
5
10
15
20
25
30
35
0 0.5 1 1.5 2 2.5 3 3.5 4
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150 oC
10V
7.0V
5.0V
4.5V
VG=3.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=4.8A
VG=10V
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25 oCTj=150 oC
AP2604Y
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
10
100
1000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Sin
g
le Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 156℃
℃℃
℃/W
tT
0
4
8
12
16
024681012
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
VDS =15V
VDS =20V
VDS =24V
ID=4.8A
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
1ms
10ms
100ms
1s
DC
TA=25 oC
Single Pulse
