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Collector-emitter voltage VCES VGE = 0 V 2500 V
DC collector current ICTc = 80 °C 1200 A
Peak collector current ICM tp = 1 ms, Tc = 8 0 ° C 2400 A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 13900 W
DC forward current IF1200 A
Peak forward current IFM 2400 A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 11000 A
IGBT short circuit SOA tpsc VCC = 1800 V, V CEM CHIP ≤ 2500 V
VGE ≤ 15 V, Tvj ≤ 125 ° C 10 µs
Isolation voltage Visol 1 mi n , f = 5 0 Hz 5000 V
Junction temperature Tvj 150 °C
Junction ope rating te mperature Tvj(op) -40 125 °C
Storage temperature Tstg -40 125 °C
M1Base-heatsink, M6 screws 4 6
Mounting torques M2Main terminals, M8 screws 8 10 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur
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Doc. No. 5SYA 1557-01 Oct 03 page 2 of 9
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Collector (-emitter)
breakdown volt age V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 2500 V
Tvj = 25 °C2.5 V
Collector-emitter 2)
saturation vo lta ge VCE sat IC = 1200 A, VGE = 15 V Tvj = 125 °C3.13.4V
Tvj = 25 °C12mA
Collecto r cut-off current ICES VCE = 2500 V, VGE = 0 V Tvj = 125 °C 120 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C-500 500 nA
Gate-emitter threshold voltage VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C6 7.5V
Gate charge Qge IC = 1200 A, VCE = 1250 V,
VGE = -15 V .. 15 V 12.2 µC
Input capacitance Cies 186
Output capacitance Coes 13.7
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C2.98 nF
Tvj = 25 °C 375
Turn-on delay time td(on) Tvj = 125 °C 365 ns
Tvj = 25 °C 240
Rise time tr
VCC = 1250 V,
IC = 1200 A,
RG = 1.5 Ω,
VGE = ±15 V,
Lσ = 100 nH, inductive load Tvj = 125 °C 250 ns
Tvj = 25 °C 875
Turn-off delay time td(off) Tvj = 125 °C 980 ns
Tvj = 25 °C 300
Fall time tf
VCC = 1250 V,
IC = 1200 A,
RG = 1.5 Ω,
VGE = ±15 V,
Lσ = 100 nH, inductive load Tvj = 125 °C 345 ns
Tvj = 25 °C 820
Turn-on switching energy Eon
VCC = 1250 V, IC = 1200 A,
VGE = ±15, RG = 1.5 Ω,
Lσ = 100 nH, inductive load Tvj = 125 °C 1150 mJ
Tvj = 25 °C 980
Turn-off switching energy Eoff
VCC = 1250 V, IC = 1200 A,
VGE = ±15, RG = 1.5 Ω,
Lσ = 100 nH, inductive load Tvj = 125 °C 1250 mJ
Short circuit current ISC tpsc  V9GE = 15 V, Tvj = 125 °C,
VCC = 1800 V, VCEM CHIP 2500 V 5800 A
Module stray inductance Lσ CE 10 nH
TC = 25 °C0.06
Resistance, terminal-chip RCC’+EE’TC = 125 °C0.085m
2) Collector emitter saturation voltage is given at chip level
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Doc. No. 5SYA 1557-01 Oct 03 page 3 of 9
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Tvj = 25 °C1.75
Contino us forward vo ltage 3) VFIF = 1200 A Tvj = 125 °C1.8 V
Tvj = 25 °C 965
Peak reverse recovery
current IRM Tvj = 125 °C 1180 A
Tvj = 25 °C 680
Recovered charge QRR Tvj = 125 °C 1150 µC
Tvj = 25 °C 1250
Reverse recovery time trr Tvj = 125 °C 970 ns
Tvj = 25 °C 580
Reverse recovery energy E rec
VCC = 1250 V,
IF = 1200 A,
VGE = ±15 V,
RG = 1.5 Ω
Lσ = 100 nH
induct ive loa d
Tvj = 125 °C 990 mJ
3) Forward voltage is given at chip level
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IGBT thermal resistance
junction to case Rth(j-c)IGBT 0.009 K/W
Diode thermal resistance
junction to case Rth(j-c)DIODE 0.017 K/W
Thermal resistance case
to heatsink Rth(c-h) per module, λ grease = 1W/m x K 0.006 K/W
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Dimensions L x W x H Typical , see outline drawing 190 x 140 x 38 mm
Term. to base: 23
Clearance distance DCaccording to IEC 60664-1
and EN 50124-1 Term. to term: 19 mm
Term. to base: 33
Surface creepage distance DSC according to IEC 60664-1
and EN 50124-1 Term. to term: 32 mm
Weight 1500 gr
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Doc. No. 5SYA 1557-01 Oct 03 page 4 of 9
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Doc. No. 5SYA 1557-01 Oct 03 page 5 of 9
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VCE [V]
I
C
[A]
VGE = 15 V
25 °C
125 °C
0
200
400
600
800
1000
1200
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1600
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2400
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125 °C
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400
600
800
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VCE [V]
I
C
[A]
Tvj = 25°C
17 V
9 V
11 V
15 V
13 V
0
200
400
600
800
1000
1200
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1600
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VCE [V]
I
C
[A]
Tvj = 125 °C
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9 V
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Doc. No. 5SYA 1557-01 Oct 03 page 6 of 9
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IC [A]
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RG = 1.5 oh m
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
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VCC = 1250 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
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vs collector current )LJ Typical switching energies per pulse
vs gate resistor
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IC [A]
t
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f
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VCC = 1250 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
td(on)
td(off)
tf
tr
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1
10
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RG [ohm]
t
d(on)
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r
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IC = 1200 A
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vs collector current )LJ Typical switching times
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Doc. No. 5SYA 1557-01 Oct 03 page 7 of 9
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1000
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VCE [V]
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VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
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10
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GE
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VCC = 1750
IC = 1200 A
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IF [A]
E
rec
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RM
[A], Q
RR
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QRR
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VCC = 1250 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
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600
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1000
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1600
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RM
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VCC = 125 0 V
IC = 1200 A
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guarantee expressed or implied is made regarding delivery, performance or suitability.
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$%%6ZLW]HUODQG/WG Doc. No. 5SYA 1557-01 Oct 03
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Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Telepho ne +41 (0)58 586 141 9
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
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