STTH2002CRC High efficiency ultrafast diode Main product characteristics IF(AV) 2 x 10 A VRRM 200 V Tj (max) 175 C VF (typ) 0.76 V trr (typ) 20 ns A1 A2 K Features and benefits Suited for SMPS Low losses Low forward and reverse recovery times High surge current capability High junction temperature I2PAK double track STTH2002CRC Description Dual center tab rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in IPAK double track, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection Order codes April 2006 Part Number Marking STTH2002CRC STTH2002C STTH2002CRC-TR STTH2002C Rev 1 1/8 www.st.com Characteristics STTH2002CRC 1 Characteristics Table 1. Absolute ratings (limiting values at Tj = 25 C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) Average forward current, = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Table 2. Value Unit 200 V Per diode 32 A Per diode Tc = 150 C 10 Per device Tc = 145 C 20 tp = 10 ms Sinusoidal 100 A -65 to + 175 C 175 C Value Unit A Maximum operating junction temperature Thermal parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Per diode 2.5 Total 1.4 C/W 0.25 When the two diodes 1 and 2 are used simultaneously: Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 125 C Tj = 150 C VF (2) Forward voltage drop Tj = 25 C Tj = 150 C Typ Max. Unit 10 VR = VRRM IF = 10 A A 10 100 0.76 0.85 1.2 IF = 20 A 1. Pulse test: tp = 5 ms, < 2 % 2. Pulse test: tp = 380 s, < 2 % To evaluate the conduction losses use the following equation: P = 0.68 x IF(AV) + 0.017 IF2(RMS) 2/8 Min. 0.90 1.02 V STTH2002CRC Characteristics Table 4. Dynamic characteristics Symbol Parameter trr Test conditions Typ Max. IF = 1 A, dIF/dt = -100 A/s, VR = 30 V, Tj = 25 C 20 25 IF = 1 A, dIF/dt = -50 A/s, VR = 30 V, Tj = 25 C 28 35 Reverse recovery current IF = 10 A, dIF/dt = 200 A/s, VR = 160 V, Tj = 125 C 5.8 7.5 Forward recovery time IF = 10 A, dIF/dt = 50 A/s VFR = 1.1 x VFmax, Tj = 25 C 180 ns Forward recovery voltage IF = 10 A, dIF/dt = 50 A/s, VFR = 1.1 x VFmax, Tj = 25 C 1.6 V Reverse recovery time IRM tfr VFP Figure 1. Peak current versus duty cycle Figure 2. Min. Unit ns A Forward voltage drop versus forward current (typical values) IM(A) IFM(A) 100 200 T IM 180 d=tp/T 80 tp 160 140 60 120 P = 10 W 100 80 40 P=5W Tj=150C 60 P=3W Tj=25C 40 20 20 0 VFM(V) 0 0.0 0.0 Figure 3. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.5 1.0 1.5 2.0 2.5 3.0 1.0 Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration Zth(j-c)/Rth(j-c) IFM(A) 1.0 200 Single pulse IPAK 180 160 140 120 100 80 Tj=150C 60 40 Tj=25C 20 VFM(V) tp(s) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1.E-03 1.E-02 1.E-01 1.E+00 3/8 Characteristics Figure 5. STTH2002CRC Junction capacitance versus reverse applied voltage (typical values) Figure 6. Reverse recovery charges versus dIF/dt (typical values) QRR(nC) C(pF) 100 200 F=1MHz Vosc=30mVRMS Tj=25C IF=10A VR=160V 150 Tj=125 C 100 50 Tj=25 C VR(V) dIF/dt(A/s) 10 0 1 10 Figure 7. 100 1000 Reverse recovery time versus dIF/dt (typical values) 10 100 Figure 8. tRR(ns) 1000 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 80 12 IF=10A VR=160V IF=10A VR=160V 70 10 60 8 50 Tj=125C 40 Tj=125C 6 30 4 Tj=25C 20 2 10 Tj=25C dIF/dt(A/s) dIF/dt(A/s) 0 0 10 100 Figure 9. 1000 Dynamic parameters versus junction temperature QRR; IRM [T j] / Q RR; IRM [T j=125C] 1.4 IF=10A VR=160V 1.2 1.0 IRM 0.8 0.6 QRR 0.4 0.2 Tj(C) 0.0 25 4/8 50 75 100 125 150 10 100 1000 STTH2002CRC 2 Ordering information scheme Ordering information scheme STTH 20 02 xxx Ultrafast switching diode Average forward current 20 = 20 A Repetitive peak reverse voltage 02 = 200 V Package CRC = I2PAK double track 5/8 Package information 3 STTH2002CRC Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) I2PAK double track dimensions Table 5. DIMENSIONS REF. A E Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.018 0.024 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 E 10 10.40 0.394 0.409 G 4.88 5.28 0.192 0.208 L 16.70 17.5 0.657 0.689 L2 1.27 1.40 0.050 0.055 L3 13.82 14.42 0.544 0.568 D Cropping direction L3 A1 G Inches C2 L2 L Millimeters C B2 B In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 STTH2002CRC 4 Ordering information Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH2002CRC STTH2002C I2PAK DT 1.48 g 50 Tube STTH2002C I2 1.48 g 1000 Tape and reel STTH2002CRC-TR 5 PAK DT Revision history Date Revision 05-Apr-2006 1 Description of Changes First issue 7/8 STTH2002CRC Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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