June 2008 Rev 2 1/16
16
STD2NK100Z
STP2NK100Z - STU2NK100Z
N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK
Zener-protected SuperMESH™ Power MOSFET
Features
■Extremely high dv/dt capability
■100% avalanche tested
■Gate charge minimized
■Very low intrinsic capacitances
■Very good manufacturing repeatability
Application
■Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
Figure 1. Internal schematic diagram
Type VDSS
RDS(on)
max IDPTOT
STD2NK100Z 1000 V < 8.5 Ω1.85 A 70 W
STP2NK100Z 1000 V < 8.5 Ω1.85 A 70 W
STU2NK100Z 1000 V < 8.5 Ω1.85 A 70 W
123
TO-220
DPAK
1
3
IPAK
3
2
1
Table 1. Device summary
Order codes Marking Package Packaging
STD2NK100Z 2NK100Z DPAK Tape and reel
STP2NK100Z 2NK100Z TO-220 Tube
STU2NK100Z 2NK100Z IPAK Tube
www.st.com
Contents STD2NK100Z - STP2NK100Z - STU2NK100Z
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STD2NK100Z - STP2NK100Z - STU2NK100Z Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 1000 V
VGS Gate-source voltage ± 30 V
ID Drain current (continuous) at TC = 25 °C 1.85 A
ID Drain current (continuous) at TC = 100 °C 1.16 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 7.4 A
PTOT Total dissipation at TC = 25 °C 70 W
Derating factor 0.56 W/°C
VESD(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ) 3000 V
dv/dt (2)
2. ISD ≤ 1.85 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope 2.5 V/ns
Tj
Tstg
Operating junction temperature
Storage temperature -55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 IPAK DPAK
Rthj-case Thermal resistance junction-case max 1.79 °C/W
Rthj-pcb Thermal resistance junction-pcb minimum footprint -- -- 50 °C/W
Rthj-amb Thermal resistance junction-amb max 62.5 100 °C/W
TlMaximum lead temperature for soldering purpose 300 °C
Table 4. Avalanche data
Symbol Parameter Value Unit
IAR (1)
1. Pulse width limited by Tjmax
Avalanche current, repetitive or not-repetitive 1.85 A
EAS (2)
2. Starting Tj = 25°C, ID = IAR, VDD = 50V
Single pulse avalanche energy 170 mJ
Electrical characteristics STD2NK100Z - STP2NK100Z - STU2NK100Z
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage ID = 1 mA, VGS= 0 1000 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc=125 °C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ± 30 V ±10 µA
VGS(th) Gate threshold voltage VDS= VGS, ID = 50 µA 3 3.75 4.5 V
RDS(on) Static drain-source on
resistance VGS= 10 V, ID= 0.9 A 6.25 8.5 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance VDS =15 V, ID = 0.9 A 2.4 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
499
53
9
pF
pF
pF
Coss eq.(2)
2. Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance VGS =0, VDS =0 to 800 V 28 pF
RGGate input resistance f=1 MHz, open drain 6.6 Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=800 V, ID = 1.85 A
VGS =10 V
(see Figure 17)
16
3
9
nC
nC
nC
STD2NK100Z - STP2NK100Z - STU2NK100Z Electrical characteristics
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Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time VDD= 500 V, ID= 0.9 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
7.2
6.5
ns
ns
td(off)
tr
Turn-off delay time
Fall time
41.5
32.5
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by package
Source-drain current
Source-drain current
(pulsed)
1.85
7.4
A
A
VSD (2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage ISD= 1.85 A, VGS=0 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 1.85 A, di/dt= 100 A/µs,
VDD= 60 V
(see Figure 21)
476
1.6
6.9
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 1.85 A, di/dt= 100 A/µs,
VDD= 60 V, Tj=150 °C
(see Figure 21)
532
1.9
88
ns
µC
A
Table 9. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BVGSO
(1)
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
Gate-source breakdown
voltage IGS = ±1mA (open drain) 30 V
Electrical characteristics STD2NK100Z - STP2NK100Z - STU2NK100Z
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220
Figure 4. Safe operating area for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK
Figure 6. Output characteristics Figure 7. Transfer characteristics
STD2NK100Z - STP2NK100Z - STU2NK100Z Electrical characteristics
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Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Electrical characteristics STD2NK100Z - STP2NK100Z - STU2NK100Z
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Figure 14. Source-drain diode forward
characteristics
Figure 15. Maximum avalanche energy vs
temperature
T
J
(°C)1401301201101009080706050403020100
E
AS(
mJ)
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
AM00056v1
ID
=1.85A
STD2NK100Z - STP2NK100Z - STU2NK100Z Test circuits
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3 Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test
circuit
Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
Package mechanical data STD2NK100Z - STP2NK100Z - STU2NK100Z
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4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
STD2NK100Z - STP2NK100Z - STU2NK100Z Package mechanical data
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TO-220 mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.480.70 0.0190.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.231.32 0.0480.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L1314 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
∅P3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
Package mechanical data STD2NK100Z - STP2NK100Z - STU2NK100Z
12/16
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
b0.64 0.90
b20.95
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
E 6.40 6.60
e2.28
e1 4.40 4.60
H 16.10
L9.00 9.40
(L1) 0.801.20
L2 0.80
V1 10
o
TO-251 (IPAK) mechanical data
0068771_H
STD2NK100Z - STP2NK100Z - STU2NK100Z Package mechanical data
13/16
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
A2 0.030.23
b0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0
o
8
o
TO-252 (DPAK) mechanical data
0068772_G
Packaging mechanical data STD2NK100Z - STP2NK100Z - STU2NK100Z
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5 Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
STD2NK100Z - STP2NK100Z - STU2NK100Z Revision history
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6 Revision history
Table 10. Document revision history
Date Revision Changes
24-Oct-2007 1 First release
18-Jun-2008 2
– Inserted new package, mechanical data IPAK
– Document status promoted from preliminary data to
datasheet.
STD2NK100Z - STP2NK100Z - STU2NK100Z
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