HN58X2416SFPI - Renesas Technology / Hitachi Semiconductor

Rev.1.00, Oct. 21. 2003, page 1 of 21

HN58X2408SI/HN58X2416SI

Two-wire serial interface

8k EEPROM (1-kword × 8-bit)

16k EEPROM (2-kword × 8-bit) REJ03C0097-0100Z

Rev. 1.00

Oct. 21, 2003

Description

HN58X24xxSI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable

ROM). They realize hig h speed, low power consumption and a high level of reliability by employing

advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also

have a 32-byte page programming function to make their write operation faster.

Note: Renesas Technology’s serial EEPROM are authorized for using consumer applications such as

cellular phone, camcorders, audio equipment. Therefore, please contact Renesas Technology’s

sales office before using industrial applications such as automotive systems, embedded controllers,

and meters.

Features

• Single supply: 1.8 V to 5.5 V

• Two-wire serial interface (I2CTM serial bus*1)

• Clock frequency: 400 kHz

• Power dissipation:

 Standby: 3 µA (max)

 Active (Read): 1 mA (max)

 Active (Write): 3 mA (max)

• Automatic page write: 32-byte/page

• Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)

• Endurance: 105 Cycles (Page write mode)

• Data retention: 10 Years

• Small size packages: TSSOP-8pin, SOP-8pin and SON 8-pin

• Shipping tape and reel

 TSSOP 8-pin: 3,000 IC/reel

 SOP 8-pin: 2,500 IC/reel

 SON 8-pin: 3,000 IC/reel

• Temperature range: −40 to +85°C

• There are also lead free products.

Note: 1. I2C is a trademar k of Philip s Corporation.

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 2 of 21

Ordering Information

Type No. Internal organization Operating

voltage Frequency Package

HN58X2408SFPI 8k bit (1024 × 8-bit) 1.8 V to 5.5 V 400 kHz 150 mil 8-pin plastic SOP

(FP-8DB)

HN58X2416SFPI 16k bit (2048 × 8-bit)

HN58X2408STI 8k bit (1024 × 8-bit) 1.8 V to 5.5 V 400 kHz 8-pin plastic TSSOP

(TTP-8DA)

HN58X2416STI 16k bit (2048 × 8-bit)

HN58X2408SNI 8k bit (1024 × 8-bit) 1.8 V to 5.5 V 400 kHz 8-pin plastic SON

(TNP-8DA)

HN58X2416SNI 16k bit (2048 × 8-bit)

HN58X2408SFPIE 8k bit (1024 × 8-bit) 1.8 V to 5.5 V 400 kHz 150 mil 8-pin plastic SOP

(FP-8DBV)

HN58X2416SFPIE 16k bit (2048 × 8-bit) Lead Free

HN58X2408STIE 8k bit (1024 × 8-bit) 1.8 V to 5.5 V 400 kHz 8-pin plastic TSSOP

(TTP-8DAV)

HN58X2416STIE 16k bit (2048 × 8-bit) Lead Free

HN58X2408SNIE 8k bit (1024 × 8-bit) 1.8 V to 5.5 V 400 kHz 8-pin plastic SON

(TNP-8DAV)

HN58X2416SNIE 16k bit (2048 × 8-bit) Lead Free

Pin Arrangement

VSS

VCC

SCL

SDA

(Top view)

8-pin TSSOP

8-pin SOP

8-pin SON

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 3 of 21

Pin Description

Pin name Function

A0 to A2 Device address

SCL Serial clock input

SDA Serial data input/output

WP Write protect

VCC Power supply

VSS Ground

Block Diagram

Control

logic

High voltage generator

Address generator

X decoderY decoder

Memory array

Y-select & Sense amp.

Serial-parallel converter

VCC

VSS

A0, A1, A2

SCL

SDA

Absolute Maximum Ratings

Parameter Symbol Value Unit

Supply voltage relative to VSS V

CC −0.6 to +7.0 V

Input voltage relative to VSS Vin −0.5*2 to +7.0*3 V

Operating temperature range*1 Topr −40 to +85 °C

Storage temperature range Tstg −65 to +125 °C

Notes: 1. Including electrical characteristics and data retention.

2. Vin (min): −3.0 V for pulse width ≤ 50 ns.

3. Should not exceed VCC + 1.0 V.

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 4 of 21

DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VCC 1.8  5.5 V

SS 0 0 0 V

Input high voltage VIH V

CC × 0.7  V

CC + 1.0 V

Input low voltage VIL −0.3*1  V

CC × 0.3 V

Operating temperature Topr −40  +85 °C

Note: 1. VIL (min): −1.0 V for pulse width ≤ 50 ns.

DC Characteristics (Ta = −40 to +85°C, VCC = 1.8 V to 5.5 V)

Parameter Symbol Min Typ Max Unit Test conditions

Input leakage current ILI   2.0 µA VCC = 5.5 V, Vin = 0 to 5.5 V

Output leakage current ILO   2.0 µA VCC = 5.5 V, Vout = 0 to 5.5 V

Standby VCC current ISB  1.0 3.0 µA Vin = VSS or VCC

Read VCC current ICC1   1.0 mA VCC = 5.5 V, Read at 400 kHz

Write VCC current ICC2   3.0 mA VCC = 5.5 V, Write at 400 kHz

Output low voltage VOL2   0.4 V VCC = 4.5 to 5.5 V, IOL = 1.6 mA

VCC = 2.7 to 4.5 V, IOL = 0.8 mA

VCC = 1.8 to 2.7 V, IOL = 0.4 mA

OL1   0.2 V VCC = 1.8 to 2.7 V, IOL = 0.2 mA

Capacitance (Ta = +25°C, f = 1 MHz )

Parameter

Symbol

Min

Typ

Max

Unit Test

conditions

Input capacitance (A0 to A2, SCL, WP) Cin*1   6.0 pF Vin = 0 V

Output capacitance (SDA) CI/O*1   6.0 pF Vout = 0 V

Note: 1. This parameter is sampled and not 100% tested.

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 5 of 21

AC Characteristics (Ta = −40 to +85°C, VCC = 1.8 to 5.5 V)

Test Condit ions

• Input pulse levels:

 VIL = 0.2 × VCC

 VIH = 0.8 × VCC

• Input rise and fall time: ≥ 20 ns

• Input and output timing reference levels: 0.5 × VCC

• Output load: TTL Gate + 100 pF

Parameter Symbol Min Typ Max Unit Notes

Clock frequency fSCL   400 kHz

Clock pulse width low tLOW 1200   ns

Clock pulse width high tHIGH 600   ns

Noise suppression time tI   50 ns 1

Access time tAA 100  900 ns

Bus free time for next mode tBUF 1200   ns

Start hold time tHD.STA 600   ns

Start setup time tSU.STA 600   ns

Data in hold time tHD.DAT 0   ns

Data in setup time tSU.DAT 100   ns

Input rise time tR   300 ns 1

Input fall time tF   300 ns 1

Stop setup time tSU.STO 600   ns

Data out hold time tDH 50   ns

Write protect hold time tHD.WP 1200   ns

Write protect setup time tSU.WP 0   ns

Write cycle time VCC = 2.7 V to 5.5 V tWC   10 ms 2

CC = 1.8 V to 2.7 V tWC   15 ms 2

Notes: 1. This parameter is sampled and not 100% tested.

2. tWC is the time from a stop condition to the end of internally controlled write cycle.

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 6 of 21

Timing Waveforms

Bus Timing

1/fSCL

tHIGH

tSU.STA tHD.STA tHD.DAT tSU.DAT tSU.STO

tBUF

tDH

tAA

tLOW tR

SCL

SDA

(in)

SDA

(out)

tSU.WP tHD.WP

Write Cycle Timing

SCL

SDA D0 in

Write data ACK

(Address (n))

tWC

(Internally controlled)

Stop condition Start condition

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 7 of 21

Pin Function

Serial Clock (SCL)

The SCL pin is used to control serial input/output data timing. The SCL input is used to positive edge

clock data into EEPROM device and negative edge clock data out of each device. Maximum clock rate is

400 kHz.

Serial Input/Output Data (SDA)

The SDA pin is bidirectional for serial data transfer. The SDA pin needs to be pulled up by resistor as that

pin is open-drain driven structure. Use proper resistor value for your system by considering VOL, IOL and

the SDA pin capacitan ce. Except for a start co ndition and a stop conditio n which will be discu ssed later,

the SDA transition needs to be completed during the SCL low period.

Data Validit y (SDA data change timing waveform)

SCL

SDA

Data

change Data

change

Note: High-to-low and low-to-high change of SDA should be done during the SCL low period.

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 8 of 21

Device Address (A0, A1, A2)

Eight devices can be wired for one common data bus line as maximum. Device address pins are used to

distinguish each device and device address pins should be connected to VCC or VSS. When device address

code provided from SDA pin matches corresponding hard-wired device address pins A0 to A2, that one

device can be activated. As for 8k to 16k EEPROM, whole or some device address pins don't need to be

fixed since device address code provided from the SDA pin is used as memory address signal.

Pin Connections fo r A0 to A2

Pin connection

Memory size Max connect

number

Notes

8k bit 2 VCC/VSS*1×*2 × Use A0, A1 for memory address a8 and a9

16k bit 1 × × × Use A0, A1, A2 for memory address a8, a9 and

a10

Notes: 1. “VCC/VSS” means that device address pin should be connected to VCC or VSS.

2. × = Don’t care (Open is also approval.)

Write Protect (WP)

When the Write Protect pin (WP) is high, the write protection feature is enabled and operates as shown in

the following table. When the WP is low, wr ite operation for all memory arrays are allowed. Th e r ead

operation is always activated irrespective of the WP pin status. WP pin should be fixed high or low status

from start condition input to stop condition input. When left unconnected, write operation for all memory

arrays are allowed because the WP pin is internally pulled down to VSS. The read operation is always

activated irrespective of the WP pin status.

Write Protect Area

WP pin status Write protect area

VIH All memory

VIL Normal read/write operation

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 9 of 21

Functional Description

Start Co ndition

A high-to-low transition of the SDA with the SCL high is needed in order to start read, write operation.

(See start condition and stop condition)

Stop Conditio n

A low-to-high transition of the SDA with the SCL high is a stop condition. The stand-by operation starts

after a read sequence by a stop condition. In the case of write operation, a stop condition terminates the

write data inputs and place the device in an internally-timed write cycle to the memories. After the

internally-timed write cycle which is specified as tWC, the device enters a standby mode. (See write cycle

timing)

Start Co ndit ion and Stop Condition

SCL

SDA

(in)

Stop conditionStart condition

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 10 of 21

Acknowledge

All addresses and d ata words are serially transmitted to and from in 8-b it wo rds. The receiver sends a zero

to acknowledge that it has received each word. This happens during ninth clock cycle. The transmitter

keeps bus open to receive acknowledgment from the receiver at the ninth clock. In the write operation,

EEPROM sends a zero to acknowledge after receiving every 8-bit words. In the read operation, EEPROM

sends a zero to acknowledge after receiving the device address word. After sending read data, the

EEPROM waits acknowledgment by keeping bus open. If the EEPROM receives zero as an acknowledge,

it sends read data of next address. If the EEPROM receives acknowledgment "1" (no acknowledgment)

and a following stop condition, it stops the read operation and enters a stand-by mode. If the EEPROM

receives neither acknowledgment "0" nor a stop condition, the EEPROM keeps bus open without sending

read data.

Acknowledge Timing Wa veform

SCL

SDA IN

SDA OUT

12 89

Acknowledge

out

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 11 of 21

Device Addressing

The EEPROM device requires an 8-bit device address word following a start condition to enable the chip

for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device address

code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are used to

distinguish device type and this EEPROM uses “1010” fixed code. The device address word is followed

by the 3-bit device address code in the order of A2, A1, A0. The device address code selects one device

out of all devices which are connected to the bus. This means that the device is selected if the inputted 3-

bit device address code is equal to the corresponding hard-wired A2-A0 pin status. As for the 8kbit and

16kbit EEPROMs, whole or some bits of their device address code may be used as the memory address

bits. For example, A0 and A1 are used as a8 and a9 for the 8kbit. The 16kbit doesn't use the device

address code instead all 3 bits are used as the memory address bits a8, a9 and a10. The eighth bit of the

device addr ess word is the read /wr ite(R/W) bit. A write oper ation is initiated if this bit is low and a r ead

operation is initiated if this bit is high. Upon a compare of the device address word, the EEPROM enters

the read or write operation after outputting the zero as an acknowledge. The EEPROM turns to a stand-by

state if the device code is not “1010” or device address code doesn’t coincide with status of the correspond

hard-wired device address pins A0 to A2.

Device Address Word

Device address word (8-bit)

Device code (fixed) Device address code*1 R/W code*2

8k 1 0 1 0 A2 a9 a8 R/W

16k 1 0 1 0 a10 a9 a8 R/W

Notes: 1. A2 to A0 are device address and a10 to a8 are memory address.

2. R/W=“1” is read and R/W = “0” is write.

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 12 of 21

Write Operations

Byte Writ e :

A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends

acknowledgment "0" at the ninth clock cycle. After these, the 8kbit to 16kbit EEPROMs receive 8-bit

memory address word. Upon receipt of this memory address, the EEPROM outputs acknowledgment "0"

and receives a following 8-bit write data. After receipt of write data, the EEPROM outputs

acknowledgment "0". If the EEPROM receives a stop condition, the EEPROM enters an internally-timed

write cycle and terminates receipt of SCL, SDA inputs until completion of the write cycle. The EEPROM

returns to a standby mode after completion of the write cycle.

Byte Write Operation

8k to 16k

Device

address Memory

address (n) Write data (n)

Start Stop

1010 W

ACK ACK ACK

R/W

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 13 of 21

Page Write:

The EEPROM is capable of the page write operation which allows any number of bytes up to 32 bytes to

be written in a single write cycle. The page wr ite is the same sequence as th e byte write except for

inputting the more write data. The page write is initiated by a start condition, device address word,

memory address(n) and write data(Dn) with every ninth bit acknowledgment. The EEPROM enters the

page write operation if the EEPROM receives more write data(Dn+1) instead of receiving a stop condition.

The a0 to a4 address bits are automatically incremented upon receiving write data(Dn+1). The EEPROM

can continue to receive write data up to 32 bytes. If the a0 to a4 address bits reaches the last address of the

page, the a0 to a4 address bits will r o ll over to the f ir st ad d ress of the same p age and previous write data

will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters

internally-tim ed write cycle.

Page Write Operation

Device

address Memory

address (n) Write data (n+m)Write data (n)

8k to

16k 1010

Stop

Start ACK ACK

ACK

R/W ACK

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 14 of 21

Acknowledge Polling:

Acknowledge polling feature is used to show if the EEPROM is in an internally-timed write cycle or not.

This feature is initiated by the stop condition after inputting write data. This requires the 8-bit device

address word following the start condition during an internally-timed write cycle. Acknowledge polling

will operate when the R/W code = “0”. Acknowledgment “1” (no acknowledgment) shows the EEPROM

is in an internally-timed write cycle and acknowledgment “0” shows that the internally-timed write cycle

has completed. See Write Cycle Polling using ACK.

Write Cycle Polling Using ACK

Send

write command

Send

stop condition

to initiate write cycle

Send

start condition

Send

device address word

with R/W = 0

Send

memory address Send

start condition

Send

stop condition

Send

stop condition

Proceed random address

read operation

Proceed write operation

Next operation is

addressing the memory

Yes

ACK

returned

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 15 of 21

Read Operation

There are three read operations: current address read, random read, and sequential read. Read operations

are initiated the same way as write operatio ns with the exception of R/W = “1”.

Current Address Read:

The internal address counter maintains the last address accessed during the last read or write operation,

with incremented by one. Current address read accesses the address kept by the internal address counter.

After receiving a start condition and the device address word(R/W is “1”), the EEPROM outputs the 8-bit

current address data from the most significant bit following acknowledgment “0”. If the EEPROM

receives acknowledgment “1” (no acknowledgment) and a following stop condition, the EEPROM stops

the read operation and is turned to a standby state. In case the EEPROM has accessed the last address of

the last page at p r evious read op e r ation, the current address will roll over and r e turns to zero address. In

case the EEPROM has accessed the last address of the page at previous write operation, the current address

will roll over within page addressing an d returns to the first addr ess in the same pag e . The current ad dress

is valid while power is on. The current address after power on will be indefinite. The random read

operation described below is necessary to define the memory address.

Current Address Read Operation

8k to 16k

Device

address Read data (n+1)

Start Stop

1010

ACK No ACK

R/W

Notes: 1. Don‘t care bit for 16k.

2. Don‘t care bits for 8k and 16k.

3. Don‘t care bits for 8k and 16k.

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 16 of 21

Random Read:

This is a read operation with defined read address. A random read requires a dummy write to set read

address. The EEPROM receives a start condition, device address word(R/W=0) and memory address (8-bit

for 8kbit to 16kbit EEPROMs) sequentially. The EEPROM outputs acknowledgment “0” after receiving

memory address then enters a current address read with receiving a start condition. The EEPROM outputs

the read data of the address which was defined in the dummy write operation. After receiving

acknowledgment “1”(no acknowledgment) and a following stop condition, the EEPROM stops the random

read operation and returns to a standby state.

Random Read Operation

Device

address Device

address

Memory

address (n) Read data (n)

8k to

16k 1010 1010

@@@ # # #

Start Start

ACK

R/W ACK

R/W

Note: 1. 2nd device address code (#) should be same as 1st (@).

Stop

No ACK

Dummy write Currect address read

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 17 of 21

Sequential Read:

Sequential reads are initiated by either a current address read or a random read. If the EEPROM receives

acknowledgment “0” after 8-bit read data, the read address is incremented and the next 8-bit read data are

coming out. This operation can be continued as long as the EEPROM receives acknowledgment “0”. The

address will roll o ver and returns ad dress zero if it reaches the last ad dress of the last page. The sequential

read can be continued after roll over. The sequential read is terminated if the EEPROM receives

acknowledgment “1” (no acknowledgment) and a following stop condition.

Sequential Read Operat ion

Device

address Read data (n+m)Read data (n) Read data (n+1) Read data (n+2)

8k to

16k 1010 R

Stop

Start ACK ACK No ACK

ACK

R/W ACK

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 18 of 21

Notes

Data Protection at VCC On/Off

When VCC is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc)

may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional

programming, this EEPROM has a power on reset function. Be careful of the notices described below in

order for the power on reset function to operate correctly.

• SCL and SDA should be fixed to VCC or VSS during VCC on/off. Low to high or high to low transition

during VCC on/off may cause the trigger for the unintentional programming.

• VCC should be turned off after the EEPROM is placed in a standby state.

• VCC should be turned on from the ground level(VSS) in order fo r the EEPROM not to enter th e

unintentional programming mode.

• VCC turn on speed should be longer than 10 µs.

Write/Erase Endurance and Data Retention Time

The endurance is 105 cycles in case of page programming and 104 cycles in case of byte programming (1%

cumulative failure rate). The da ta r etention time is mor e than 10 years when a device is page - programme d

less than 104 cycles.

Noise Suppression Time

This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than

50 ns. Be careful not to allow noise of width more than 50 ns.

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 19 of 21

Package Dimensions

HN58X2408SFPI/HN58X2416SFPI (FP-8DB)

HN58X2408SFPIE/HN58X2416SFPIE (FP-8DBV)

Package Code

JEDEC

JEITA

Mass

(reference value)

FP-8DB, FP-8DBV

—

0.08 g

*Dimension including the plating thickness

Base material dimension

– 8

1.27

0.10

0.25

1.73 Max

3.90

*0.22

4.89

0.14

+ 0.114

– 0.038

0.69 Max 6.02 ± 0.18

+ 0.034

– 0.017

0.60

+ 0.289

– 0.194

1.06

0.40 ± 0.06

0.20 ± 0.03

5.15 Max

*0.42

+0.063

–0.064

Unit: mm

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 20 of 21

HN58X2408STI/HN58X2416STI (TTP-8DA)

HN58X2408STIE/HN58X2416STIE (TTP-8DAV)

0.50 ± 0.10

0˚ – 8˚

*0.17 ± 0.05

6.40 ± 0.20

0.10

1.10 Max

0.13 M

0.65

4.40

3.00

3.30 Max

0.805 Max

*0.22

+0.08

–0.07

0.07

+0.03

–0.04

0.20 ± 0.06

0.15 ± 0.04

1.00

Package Code

JEDEC

JEITA

Mass

(reference value)

TTP-8DA, TTP-8DAV

—

0.034 g

*Dimension including the plating thickness

Base material dimension

Unit: mm

HN58X2408SI/HN58X2416SI

Rev.1.00, Oct. 21, 2003, page 21 of 21

HN58X2408SNI/HN58X2416SNI (TNP-8DA)

HN58X2408SNIE/HN58X2416SNIE (TNP-8DAV)

+ 0.08

– 0.07

+ 0.055

– 0.045

0.22

*0.18 ± 0.05

0.16 ± 0.025

3.00

3.60

3.10 Max

4.06 ± 0.1

0.23

0.125 ± 0.02

*0.145

0.675 Max

0.80 Max

0.65

0.08 M

0.10

Package Code

JEDEC

JEITA

Mass

(reference value)

TNP-8DA, TNP-8DAV

—

0.022 g

*Dimension including the plating thickness

Base material dimension

Unit: mm

Revision History HN58X2408SI/HN58X2416SI Data Sheet

Contents of Modification Rev. Date

Page Description

0.01 Sep. 30, 2003  Initial issue

1.00 Oct. 21, 2003 

Deletion of Preliminary

Ordering Information

Addition of HN58X2408SFPIE, HN58X2416SFPIE, HN58X2408STIE,

HN58X2416STIE, HN58X2408SNIE, HN58X2416SNIE

Package Dimensions

FP-8DB to FP-8DB, FP-8DBV

TTP-8DA to TTP-8DA, TTP-8DAV

TNP-8DA to TNP-8DA, TNP-8DAV

2003. Renesas Technolo

Corp., All ri

hts reserved. Printed in Japan

Colo

hon 1.0

Keep safet

first in

our circuit desi

1. Renesas Technolo

Corp. puts the maximum effort into makin

semiconductor products better and more reliable, but there is alwa

s the possibilit

that trouble

occur with them. Trouble with semiconductors ma

lead to personal in

, fire or propert

dama

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's

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diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

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