G E SOLID STATE. 01 de fpsa7soa, coi7as 9 3875081 G E SOLID STATE D1E 17915 D Signal Transistors 2N3414-17, GES3414-17 TAI? Silicon Transistors TO-92 TO-98 The GE/RCA Types 2N3414-17 and GES3414-17 are planar speed switching circuits in industrial control applications. epitaxial passivated NPN silicon transistors Intended for These types are supplied in JEDEC TO-92 package general purpose industrial circuits. These transistors arees- | (GES3414-17) and In JEDEC 10-98 package (2N3414-17), pecially suited for high fevel linear amplifiers or medium Devices in TO-98 package are supplied with and without seating flange (see Dimensional Outline). MAXIMUM RATINGS, Absolute-Maximum Values: 2N3414,15 2N3416,17 GES3414,15 GES3416,17 COLLECTOR TO EMITTER VOLTAGE (Vogg)..-ccce etc ce ccc ceceensecernesseusteeeseurettauennntees 25 50 V EMITTER TO BASE VOLTAGE (Vega)... . secs cece este cece cencer reece ecnctncesutecturusteenentetes 5 5 Vv COLLECTOR TO BASE VOLTAGE (Vogg). 02 c eee t cnet cence cece eeevennerseuceseeucseantenaes 25 50 V CONTINUOUS COLLECTOR CURRENT (Ic) (Note 1)... oe cece ec cc ene cercecenretensseneueeuerseneres 500 500 mA TOTAL POWER DISSIPATION (Ta << 25C) (P7)(Note 2) Cee eer cena ee none ete neat betee ber eteetes 360 mw TOTAL POWER DISSIPATION (Tg << 65C) (Py)(Noto 2) 2... oe e ec cc ese e env eeeeesenucscuepensurees 260 mW OPERATING TEMPERATURE (Ty) ....-ecseeree eee Peder ener reste nee e Dene eer et ba eet eneeees 55 to +150 C STORAGE TEMPERATURE (Totg)-. 6.2. ee cee cence eee e eet en tere eee enetee tee eeneteeeureneenes 55to + 150C LEAD TEMPERATURE, the + 182"(1.58mm + 0.8mm) from case for 10s max (Tec cece cence ecaeeentanes +260 c NOTES: 1. Determined from power limitations due to saturation voltage at this current. 2. Derate 7.2mW/C increase in case temperature about 25C. File Number 2054 19G E SOLID STATE 01 de ss7soa. cori o ff 3875081 G E SOLID STATE D1E 17916 OD Signal Transistors T az G */ F 2N3414-17, GES3414-17 ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Ta) = 25C Unless Otherwise Specitied LIMITS CHARACTERISTICS SYMBOL 3414,5 3416,7 UNITS MIN. MAX. MIN, MAX Collector Cutoff Current (og = 28V) ,; - 0.1 - - (Vcr = 25V, Ts = 100C) CBO - 15 - = Collector Cutoff Current (Vcg = 50V) \ = - - 0.1 pA (Vog = 50V, Ta = 100C) CRO _ - - 15 Emitter Cutoff Current (Veg =5V) lEBO - 0.1 - 0.1 Coliector Saturation voltage (lg = 3mA, Io = 50mA) Veesany - 0.3 - 0.3 v Base Saturation Voltage (Ip = 3mA, Io = 50mA) VBEISAT) - 0.85 - 0.85 - 3414,6 3415,7 - : DC Forward Current Transfer Ratio i (VcE = 4.5V, ig = 2mA) Kee 75 225 180 540 - ; Small-Signal Forward Current . Transfer Ratio (Voge = 4.5V,f = 1kH2) Ne 75 180 - - 9414,15 3416,17 - Smail-Signal Forward Current Transfer Ratio Vc = 10V; Io = 1mA;f = 1Hz) te 180 330 150 300 - Input Impedance hie 5100 9000 4200 8300 Q Output Admittance Hee 14 21 10 20 umhos Voltage Feedback Ratio bre 0.27 0.45 0.2 0.4 X 10-3 VOLTAGE (Voce) = 5 V = 100C TEMPERATURE VOLTAGE (VcE)=5 AMBIENT TEMPERATURE (Ta) = 25C COLLECTOR CURRENT (Ic) - mA COLLECTOR CURRENT (Ic) - mA 9208-42751 9208-42750 Fig. 1 Typical dc forward-current transfer ratio characteristics. Fig. 2 Typical de forward-current transfer ratio characteristics, VOLTAGE (Vog) = 5V od -CURRENT TRANSFER an RATIO (hee) (AT Ta = 25C) - . o4 1 10 AMBIENT TEMPERATURE (Ta) - C COLLECTOR CURRENT (Ic) - ma 0208-42755 92cs-42754 Fig. 3 Normalized dc forward current transfer ratio characteristic. Fig. 4 Typical collector.to-emitter saturation voltage characteristics, 20G SOLID STATE 02 pe ffsarsoan ooi7si7 2 3875081 G & SOLID STATE O1E 17917 DB Signal Transistors 2N3414-17, GES3414-17 TeG-9 (Vee) = 10 AMBIENT < E 1 g = E z a = > o 10 COLLECTOR CURRENT (Ic)- mA @2CS8- 42752 Fig. Typical collector-to-emitter saturation voltage characteristics. COLLECTOR-TO-BASE VOLTAGE (Vge)- V 220$- 42753 AMBIENT Fig. 6 Typical collector current characteristics. FER 80 o SMALL-SIGNAL CURRENT TRANS! RATIO (hte) a a a? 3 ag mt w 93 ze < eo Se as < os a Be 5 1 10 2 468! 2 a 6al 2 4 6e) O41 1 COLLECTOR-TO-BASE VOLTAGE (Vcp) -V EMITTER-TO-BASE VOLTAGE ven 4 COLLECTOR CURRENT (Ic) - mA e2cS-4278t 92cs-42762 Fig. 7 Typical input and output capacitance characteristics, Fig. 8Typical gain-bandwidth product characteristics; and small-signal current transfer ratio characteristic for 2N3414, 2N3415, GES3414 and GES3418. g 80 RATIO (hte) N o S3MALL-SIGNAL CURRENT TRANSFER < 7 3 E z a f = 5 3 e 9 - 9 w 4 8 2 4 665 2 468 2 468 2 ol 1 10 100 COLLECTOR CURRENT (Ic) -mA 204 92CS-42763 COLLECTOR-TO-EMITTER VOLTAGE (Vce) -V Fig. 9Typical gain-bandwidth product characteristics; and ence: 4e786 Ssmaitsignal current transfer ratio characteristic tor 2N3416, Fig. 10 Typical coltector characteristics for 2N3414, 2N34 15, 2N3417, GES3416 and GES3417, GES3414 and GES3415, 21G E SOLID STATE 01 pe fsa7soaz ooizaia y 3875081 G E SOLID STATE OTE 17918 D Signal Transistors TT -2 9 SP 2N3414-17, GES3414-17 q 3 i 5 3 2 E < w 3 = -] 5 = 5 S 4 5 3 4 8 a o Qo o =O2MA o 1 : COLLECTOR-10-EMITTER VOLTAGE (VcE) -V : sets-aa7Es COLLECTOR-TO-EMITTER VOLTAGE (VcE)- | Fig. 11Typical collector characteristics for 2N3416, 2N3417, . ozcs-42768 GES3416 and GES3417, Fig, 12Typical collector characteristics tor 2N3414, 2N3415, GES3414, and GES3416, % r 2 e 2 a > 5 FE 9 wa a a 3 oe (ig) = 20 = 10 yA COLLECTOR-TO-EMITTER VOLTAGE (VcE)-V 9208-42767 Fig. 19 Typical collector characteristics for 2N3416, 2N3417, GES3416, and GES3417. TERMINAL CONNECTIONS TERMINAL CONNECTIONS TO-92 Package TO-98 Package Lead 1 - Emilter Lead 1 - Emitter Lead 2 - Base Lead 2 - Collector Lead 3 - Collector Lead 3 - Base 22