1EDI05I12AF - INFINEON TECHNOLOGIES AG

Industrial Power Control

Data Sheet

Rev. 2.0, 2014-11-10

Separate output variant for IGBT

Single Channel IGBT Gate Driver IC

1EDI05I12AF

1EDI20I12AF

1EDI40I12AF

1EDI60I12AF

1EDI EiceDRIVER™ Compact

Edition 2014-11-10

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Data Sheet 3 Rev. 2.0, 2014-11-10

Trademarks of Infineon Technologies AG

AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,

CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,

EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,

MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,

PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,

SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,

TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.

Other Trademarks

Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,

PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR

development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,

FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.

FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of

Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data

Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of

MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics

Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™

of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,

OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.

RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.

SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden

Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.

UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™

of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of

Diodes Zetex Limited.

Last Trademarks Update 2010-10-26

Revision History

Page or Item Subjects (major changes since previous revision)

Rev. 2.0, 2014-11-10

all pages Final DS, completion of parameters and editorial changes

Rev. 1.01, 2014-10-14

all pages completion of parameters

1EDI EiceDRIVER™ Compact
Separate output variant for IGBT
 Data Sheet 4 Rev. 2.0, 2014-11-10
 
  
Table of Contents  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  6
Overview  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  7
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9
Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  10
1 Pin Configuration   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  10
2 Pin Functionality  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  10
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
1 Introduction  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
2 Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
3 Protection Features   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
3.1 Undervoltage Lockout (UVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
3.2 Active Shut-Down   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
3.3 Short Circuit Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
4 Non-Inverting and Inverting Inputs  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
5 Driver Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
Electrical Parameters  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
1 Absolute Maximum Ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
2 Operating Parameters   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
3 Electrical Characteristics   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
3.1 Voltage Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
3.2 Logic Input  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
3.3 Gate Driver   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
3.4 Short Circuit Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
3.5 Dynamic Characteristics   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
3.6 Active Shut Down   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
Timing Diagramms  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
Application Notes  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
1 Reference Layout for Thermal Data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
2 Printed Circuit Board Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
Table of Contents

1EDI EiceDRIVER™ Compact
Separate output variant for IGBT
 Data Sheet 5 Rev. 2.0, 2014-11-10
 
  
Figure 1 Typical Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
Figure 2 Block Diagram 1EDI05I12AF, 1EDI20I12AF, 1EDI40I12AF and 1EDI60I12AF   . . . . . . . . . . . . . . .  9
Figure 3 PG-DSO-8-51 (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  10
Figure 4 Application Example Bipolar Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
Figure 5 Application Example Unipolar Supply. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
Figure 6 Propagation Delay, Rise and Fall Time  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
Figure 7 Typical Switching Behavior. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
Figure 8 UVLO Behavior. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
Figure 9 PG-DSO-8-51 (Plastic (Green) Dual Small Outline Package)  . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
Figure 10 Reference Layout for Thermal Data (JEDEC 1s0p, 100mm², Copper thickness 35 μm) . . . . . . . .  21
List of Figures

1EDI EiceDRIVER™ Compact
Separate output variant for IGBT
 Data Sheet 6 Rev. 2.0, 2014-11-10
 
  
Table 1 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  10
Table 2 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
Table 3 Operating Parameters  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
Table 4 Voltage Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
Table 5 Logic Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
Table 6 Gate Driver  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
Table 7 Short Circuit Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
Table 8 Dynamic Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
Table 9 Active Shut Down  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
List of Tables

ED-

Compact

1EDI EiceDRIVER™ Compact

Single Channel IGBT Gate Driver IC Separate output

variant for IGBT

Data Sheet 7 Rev. 2.0, 2014-11-10

1Overview

Main Features

• Single channel isolated IGBT Driver

• Input to output isolation voltage up to 1200 V

• For high voltage power IGBTs

• Up to 10 A typical peak current at rail-to-rail outputs

• Separate source and sink outputs

Product Highlights

• Galvanically isolated Coreless Transformer Driver

• Wide input voltage operating range

• Suitable for operation at high ambient temperature

Typical Application

• AC and Brushless DC Motor Drives

• High Voltage DC/DC-Converter and DC/AC-Inverter

• Induction Heating Resonant Application

• UPS-Systems

• Welding

•Solar

Description

The 1EDI05I12AF, 1EDI20I12AF, 1EDI40I12AF, and 1EDI60I12AF are galvanically isolated single channel IGBT

driver in a PG-DSO-8-51 package that provide minimum output currents up to 6 A at separated output pins.

The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to

support even 3.3 V microcontroller.

Data transfer across the isolation barrier is realized by the Coreless Transformer Technology.

Every driver family member comes with logic input and driver output under voltage lockout (UVLO) and active

shutdown.

Product Name Gate Drive Current (min) Package

1EDI05I12AF ±0.5 A PG-DSO-8-51

1EDI20I12AF ±2.0 A PG-DSO-8-51

1EDI40I12AF ±4.0 A PG-DSO-8-51

1EDI60I12AF ±6.0 A PG-DSO-8-51

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Overview

Data Sheet 8 Rev. 2.0, 2014-11-10

Figure 1 Typical Application

OUT+

Control

EiceDRIVER

1EDIxxI12AF

EiceDRIVER

1EDIxxI12AF

IN+

IN-

GND1

VCC1 VCC2,H

VCC2,L

GND2,L

GND2,H

GND1

VCC1

OUT-

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Block Diagram

Data Sheet 9 Rev. 2.0, 2014-11-10

2 Block Diagram

Figure 2 Block Diagram 1EDI05I12AF, 1EDI20I12AF, 1EDI40I12AF and 1EDI60I12AF

IN+

IN-

GND1

VCC1

VCC2

OUT-

OUT+

GND2

input

filter

UVLO

active

filter

input

filter

GND1

VCC1

UVLO

Shoot

through

protection

VCC2

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Pin Configuration and Functionality

Data Sheet 10 Rev. 2.0, 2014-11-10

3 Pin Configuration and Functionality

3.1 Pin Configuration

Figure 3 PG-DSO-8-51 (top view)

3.2 Pin Functionality

VCC1

Logic Input supply voltage of 3.3 V up to 15 V wide operating range.

IN+ Non Inverting Driver Input

IN+ non-inverted control signal for driver output if IN- is set to low. (Output sourcing active at IN+ = high and

IN- = low)

Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN+. An internal

weak pull-down-resistor favors off-state.

Table 1 Pin Configuration

Pin No. Name Function

1 VCC1 Positive Logic Supply

2 IN+ Non-Inverted Driver Input (active high)

3 IN- Inverted Driver Input (active low)

4 GND1 Logic Ground

5 VCC2 Positive Power Supply Output Side

6 OUT+ Driver Source Output

7 OUT- Driver Sink Output

8 GND2 Power Ground

VCC1

IN+

IN-

GND1

GND2

OUT-

OUT+

VCC2

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Pin Configuration and Functionality

Data Sheet 11 Rev. 2.0, 2014-11-10

IN- Inverting Driver Input

IN- inverted control signal for driver output if IN+ is set to high. (Output sourcing active at IN- = low and IN+ = high)

Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN-. An internal

weak pull-up-resistor favors off-state.

GND1

Ground connection of input circuit.

VCC2

Positive power supply pin of output driving circuit. A proper blocking capacitor has to be placed close to this supply

pin.

OUT+ Driver Source Output

Driver source output pin to turn on external IGBT. During on-state the driving output is switched to VCC2.

Switching of this output is controlled by IN+ and IN-. This output will also be turned off at an UVLO event.

During turn off the OUT+ terminal is able to sink approx. 100 mA.

OUT- Driver Sink Output

Driver sink output pin to turn off external IGBT. During off-state the driving output is switched to GND2. Switching

of this output is controlled by IN+ and IN-. In case of UVLO an active shut down keeps the output voltage at a low

level.

GND2 Reference Ground

Reference ground of the output driving circuit.

In case of a bipolar supply (positive and negative voltage referred to IGBT emitter) this pin is connected to the

negative supply voltage.

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Functional Description

Data Sheet 12 Rev. 2.0, 2014-11-10

4 Functional Description

4.1 Introduction

The 1EDI EiceDRIVER™ Compact is a general purpose IGBT gate driver. Basic control and protection features

support fast and easy design of highly reliable systems.

The integrated galvanic isolation between control input logic and driving output stage grants additional safety. Its

wide input voltage supply range support the direct connection of various signal sources like DSPs and

microcontrollers.

The separated rail-to-rail driver outputs simplify gate resistor selection, save an external high current bypass diode

and enhance dV/dt control.

Figure 4 Application Example Bipolar Supply

4.2 Supply

The driver can operate over a wide supply voltage range, either unipolar or bipolar.

With bipolar supply the driver is typically operated with a positive voltage of 15 V at VCC2 and a negative voltage

of -8V at GND2 relative to the emitter of the IGBT as seen in Figure 4. Negative supply can help to prevent a

dynamic turn on due to the additional charge which is generated from IGBT’s input capacitance.

For unipolar supply configuration the driver is typically supplied with a positive voltage of 15 V at VCC2. In this

case, careful evaluation for turn off gate resistor selection is recommended to avoid dynamic turn on (see

Figure 5).

Figure 5 Application Example Unipolar Supply

GND1

IN+

IN-

VCC1

OUT+

VCC2

GND2

OUT-

+5V

SGND

+15V

10R

1µ

100n

3R3

-8V

1µ 0V

GND1

IN+

IN-

VCC1

OUT+

VCC2

GND2

OUT-

+5V

SGND

+15V

10R

1µ

100 n

3R3

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Functional Description

Data Sheet 13 Rev. 2.0, 2014-11-10

4.3 Protection Features

4.3.1 Undervoltage Lockout (UVLO)

To ensure correct switching of IGBTs the device is equipped with an undervoltage lockout for input and output

independently. Operation starts only after both VCC levels have increased beyond the respective VUVLOH levels

(see also Figure 8).

If the power supply voltage VVCC1 of the input chip drops below VUVLOL1 a turn-off signal is sent to the output chip

before power-down. The IGBT is switched off and the signals at IN+ and IN- are ignored until VVCC1 reaches the

power-up voltage VUVLOH1 again.

If the power supply voltage VVCC2 of the output chip goes down below VUVLOL2 the IGBT is switched off and signals

from the input chip are ignored until VVCC2 reaches the power-up voltage VUVLOH2 again.

Note: VVCC2 is always referred to GND2 and does not differentiate between unipolar or bipolar supply.

4.3.2 Active Shut-Down

The Active Shut-Down feature ensures a safe IGBT off-state in case the output chip is not connected to the power

supply or an under voltage lockout is in effect. The IGBT gate is clamped at OUT- to GND2.

4.3.3 Short Circuit Clamping

During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller capacitance. An

additional protection circuit connected to OUT+ limits this voltage to a value slightly higher than the supply voltage.

A maximum current of 500 mA may be fed back to the supply through this path for 10 μs. If higher currents are

expected or tighter clamping is desired external Schottky diodes may be added.

4.4 Non-Inverting and Inverting Inputs

There are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output while

IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high, please see Figure 7. A

minimum input pulse width is defined to filter occasional glitches.

4.5 Driver Outputs

The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of

gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to

the low internal voltage drop, switching behaviour of the IGBT is predominantly governed by the gate resistor.

Furthermore, it reduces the power to be dissipated by the driver.

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Electrical Parameters

Data Sheet 14 Rev. 2.0, 2014-11-10

5 Electrical Parameters

5.1 Absolute Maximum Ratings

Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of

the integrated circuit. Unless otherwise noted all parameters refer to GND1.

Table 2 Absolute Maximum Ratings

Parameter Symbol Values Unit Note /

Test Condition

Min. Max.

Power supply output side VVCC2 -0.3 40 V 1)

1) With respect to GND2.

Gate driver output VOUT VGND2-0.3 VVCC2+0.3 V –

Positive power supply input side VVCC1 -0.3 18.0 V –

Logic input voltages (IN+,IN-) VLogicIN -0.3 18.0 V –

Input to output isolation voltage (GND2) VISO -1200 1200 V

Junction temperature TJ-40 150 °C –

Storage temperature TS-55 150 °C –

Power dissipation (Input side) PD, IN –25mW

2) @TA = 25°C

2) See Figure 10 for reference layouts for these thermal data. Thermal performance may change significantly with layout and

heat dissipation of components in close proximity.

Power dissipation (Output side) PD, OUT – 400 mW 2) @TA = 25°C

Thermal resistance (Input side) RTHJA,IN – 145 K/W 2) @TA = 85°C

Thermal resistance (Output side) RTHJA,OUT – 165 K/W 2) @TA = 85°C

ESD capability VESD,HBM – 2 kV Human Body

Model3)

3) According to EIA/JESD22-A114-C (discharging a 100 pF capacitor through a 1.5 kΩ series resistor).

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Electrical Parameters

Data Sheet 15 Rev. 2.0, 2014-11-10

5.2 Operating Parameters

Note: Within the operating range the IC operates as described in the functional description. Unless otherwise

noted all parameters refer to GND1.

5.3 Electrical Characteristics

Note: The electrical characteristics include the spread of values in supply voltages, load and junction temperatures

given below. Typical values represent the median values at TA = 25°C. Unless otherwise noted all voltages

are given with respect to their respective GND (GND1 for pins 1 to 3, GND2 for pins 5 to 7).

5.3.1 Voltage Supply

Table 3 Operating Parameters

Parameter Symbol Values Unit Note /

Test Condition

Min. Max.

Power supply output side VVCC2 13 35 V 1)

1) With respect to GND2.

Power supply input side VVCC1 3.1 17 V –

Logic input voltages (IN+,IN-) VLogicIN -0.3 17 V –

Switching frequency fsw –1.0MHz

2) 3)

2) do not exceed max. power dissipation

3) Parameter is not subject to production test - verified by design/characterization

Ambient temperature TA-40 125 °C –

Thermal coefficient, junction-top Ψth,jt –4.8K/W

3) @TA = 85°C

Common mode transient immunity

(CMTI)

|dVISO/dt| – 100 kV/μs3) @ 1000 V

Table 4 Voltage Supply

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

UVLO threshold input

chip

VUVLOH1 –2.853.1V–

VUVLOL1 2.55 2.75 – V –

UVLO hysteresis input

chip (VUVLOH1 - VUVLOL1)

VHYS1 90 100 – mV –

UVLO threshold output

chip (IGBT supply)

VUVLOH2 –12.012.7V–

VUVLOL2 10.5 11.1 – V –

UVLO hysteresis output

chip (VUVLOH2 - VUVLOL2)

VHYS2 700 850 – mV –

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Electrical Parameters

Data Sheet 16 Rev. 2.0, 2014-11-10

5.3.2 Logic Input

Note: Unless stated otherwise VCC1 = 5.0V

5.3.3 Gate Driver

Quiescent current input

chip

IQ1 –0.651.0mAVVCC1 = 5 V

IN+ = High,

IN- = Low

=>OUT = High

Quiescent current output

chip

IQ2 –1.22.0mAVVCC2 = 15 V

IN+ = High,

IN- = Low

=>OUT = High

Table 5 Logic Input

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

IN+,IN- low input voltage VIN+L,VIN-L – – 30 % of VCC1

IN+,IN- high input voltage VIN+H,VIN-H 70––%of VCC1

IN+,IN- low input voltage VIN+L,VIN-L ––1.5V–

IN+,IN- high input voltage VIN+H,VIN-H 3.5––V–

IN- input current IIN- –70200μAVIN- = GND1

IN+ input current IIN+,–70200μAVIN+ = VCC1

Table 6 Gate Driver

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

High level output peak

current (source)

1EDI05I12AF

1EDI20I12AF

1EDI40I12AF

1EDI60I12AF

IOUT+,PEAK

0.5

2.0

4.0

6.0

–

1.3

4.0

7.5

10.0

–A

IN+ = High,

IN- = Low,

VVCC2 = 15 V

1) voltage across the device V(VCC2 - OUT+) or V(OUT- - GND2) < VVCC2.

Low level output peak

current (sink)

1EDI05I12AF

1EDI20I12AF

1EDI40I12AF

1EDI60I12AF

IOUT-,PEAK

0.5

2.0

4.0

6.0

–

0.9

3.5

6.8

9.4

–A

IN+ = Low,

IN- = Low,

VVCC2 = 15 V

Table 4 Voltage Supply (cont’d)

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Electrical Parameters

Data Sheet 17 Rev. 2.0, 2014-11-10

5.3.4 Short Circuit Clamping

5.3.5 Dynamic Characteristics

Dynamic characteristics are measured with VVCC1 = 5 V and VVCC2 = 15 V.

Table 7 Short Circuit Clamping

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Clamping voltage (OUT+)

(VOUT - VVCC2)

VCLPout – 0.9 1.3 V IN+ = High,

IN- = Low,

OUT = High

IOUT = 500 mA

pulse test,

tCLPmax = 10 μs)

Table 8 Dynamic Characteristics

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Input IN to output propa-

gation delay ON

TPDON 270 300 330 ns CLOAD = 100 pF

VIN+ = 50%,

VOUT=50% @ 25°C

Input IN to output propa-

gation delay OFF

TPDOFF 270 300 330 ns

Input IN to output propa-

gation delay distortion

(TPDOFF - TPDON)

TPDISTO -30 5 40 ns

Input pulse suppression

IN+, IN-

TMININ+,

TMININ-

230 240 – ns –

Input IN to output

propagation delay ON

variation due to temp

TPDONt ––14ns

1)CLOAD = 100 pF

VIN+ = 50%,

VOUT=50%

1) The parameter is not subject to production test - verified by design/characterization

Input IN to output

propagation delay OFF

variation due to temp

TPDOFFt ––14ns

1)CLOAD = 100 pF

VIN+ = 50%,

VOUT=50%

Input IN to output

propagation delay

distortion variation due to

temp (TPDOFF-TPDON)

TPDISTOt ––8ns

1)CLOAD = 100 pF

VIN+ = 50%,

VOUT=50%

Rise time TRISE 5 1020nsCLOAD = 1 nF

VL 20%, VH 80%

Fall time TFALL 4919nsCLOAD = 1 nF

VL 20%, VH 80%

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Electrical Parameters

Data Sheet 18 Rev. 2.0, 2014-11-10

5.3.6 Active Shut Down

Table 9 Active Shut Down

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Active shut down voltage VACTSD

1) With reference to GND2

–2.22.5VIOUT-/IOUT-,PEAK=0.1,

VCC2 open

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Timing Diagramms

Data Sheet 19 Rev. 2.0, 2014-11-10

6Timing Diagramms

Figure 6 Propagation Delay, Rise and Fall Time

Figure 7 Typical Switching Behavior

Figure 8 UVLO Behavior

IN+

OUT

PDON

50 %

PDOFF

20 %

80 %

RISE

FALL

OUT

IN+

IN‐

OUT

IN+

VCC2

VCC1

VUVLOH 2

VUVLOL 2

VUVLOH 1

VUVLOL 1

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Package Outlines

Data Sheet 20 Rev. 2.0, 2014-11-10

7 Package Outlines

Figure 9 PG-DSO-8-51 (Plastic (Green) Dual Small Outline Package)

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Application Notes

Data Sheet 21 Rev. 2.0, 2014-11-10

8 Application Notes

8.1 Reference Layout for Thermal Data

The PCB layout shown in Figure 10 represents the reference layout used for the thermal characterisation. Pin 4

(GND1) and pin 8 (GND2) require each a ground plane of 100 mm² for achieving maximum power dissipation. The

Separate output variant for IGBT is conceived to dissipate most of the heat generated through these pins.

The thermal coefficient junction-top (Ψth,jt) can be used to calculate the junction temperature at a given top case

temperature and driver power dissipation:

Figure 10 Reference Layout for Thermal Data (JEDEC 1s0p, 100mm², Copper thickness 35 μm)

8.2 Printed Circuit Board Guidelines

The following factors should be taken into account for an optimum PCB layout.

• Sufficient spacing should be kept between high voltage isolated side and low voltage side circuits.

• The same minimum distance between two adjacent high-side isolated parts of the PCB should be maintained

to increase the effective isolation and to reduce parasitic coupling.

• In order to ensure low supply ripple and clean switching signals, bypass capacitor trace lengths should be kept

as short as possible.

TjΨth jt,PDTtop

+⋅=

Published by Infineon Technologies AG