SENSITRON
SEMICONDUCTOR
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SD040SA45A/B
Technical Data
Data Sheet 4958, Rev.- SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop (150 °C TJ Operation)
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings(1):
Electrical Characteristics(1):
(1) in SHD package
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage VRWM - 45 V
Max. Average Forward Current IF(AV) 50% duty cycle, rectangular
wave form 1 A
Max. Peak One Cycle Non-
Repetitive Surge Current IFSM 8.3 ms, half Sine wave 20 A
Non-Repetitive Avalanche
Energy EAS TJ = 25 °C, IAS = 0.74 A,
L = 18 mH 5.0 mJ
Repetitive Avalanche Current IAR IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR 0.74 A
Max. Junction Temperature TJ - -65 to +150 °C
Max. Storage Temperature Tstg - -65 to +150 °C
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop VF1 @ 1A, Pulse, TJ = 25 °C 0.56 V
VF2 @ 1A, Pulse, TJ = 125 °C 0.51 V
Max. Reverse Current IR1 @VR = 45V, Pulse,
TJ = 25 °C 100 µA
IR2 @VR = 45V, Pulse,
TJ = 125 °C 4.5 mA
Max. Junction Capacitance CT @VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
53 pF
SENSITRON
SEMICONDUCTOR
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SD040SA45A/B
Technical Data
Data Sheet 4958, Rev.- Mechanical Dimensions: In Inches / mm
Bottom side metalization Ag - 30 kÅ minimum.
Top side metalization Al - 25 kÅ minimum
or Ag - 30 kÅ minimum.
Bottom side is cathode, top side is anode.
Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top;
Dimension H = 0.0155 ± 0.001 (0.39 ± 0.026) for Ag top.
H
0.034 ± 0.003
(0.86
±
0.077)
0.040 ± 0.003
(1.02
±
0.077)
0.0 0.2 0.4 0.6 0.8
Forward Voltage Drop - V
F (V)
10-2
10-1
100
Instantaneous Forward Current - I
F (A)
Typical Forward Characteristics
125 °C
150 °C
25 °C 0 10 20 30 40 50
Reverse Voltage - V
R (V)
10-4
10-3
10-2
10-1
100
101
Instantaneous Reverse Current - I
R (mA)
Typical Reverse Characteristics
25 °C
50 °C
75 °C
100 °C
125 °C
150 °C
0 10 20 30 40 50
Reverse Voltage - V
R (V)
10
15
20
25
30
35
40
45
50
Junction Capacitance - CT (pF)
Typical Junction Capacitance
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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