W25X10CL
Publication Release Date: February 17, 2014
- 1 - Revision G
2.5 / 3 / 3.3 V
1M-BIT
SERIAL FLASH MEMORY WITH
4KB SECTORS AND DUAL I/O SPI
W25X10CL
Publication Release Date: February 17, 2014
- 2 - Revision G
Table of Contents
1. GENERAL DESCRIPTION ......................................................................................................... 4
2. FEATURES ................................................................................................................................. 4
3. PIN CONFIGURATION SOIC 150-MIL ....................................................................................... 5
4. PAD CONFIGURATION USON 2X3-MM ................................................................................... 5
5. PIN DESCRIPTION SOIC AND USON 2X3-MM ........................................................................ 5
5.1 Package Types ............................................................................................................... 6
5.2 Chip Select (/CS) ............................................................................................................ 6
5.3 Serial Data Input, Output and IOs (DI, DO, IO0 and IO1) .............................................. 6
5.4 Write Protect (/WP) ......................................................................................................... 6
5.5 HOLD (/HOLD)................................................................................................................ 6
5.6 Serial Clock (CLK) .......................................................................................................... 6
6. BLOCK DIAGRAM ...................................................................................................................... 7
7. FUNCTIONAL DESCRIPTION.................................................................................................... 8
7.1 SPI OPERATIONS ......................................................................................................... 8
7.1.1 Standard SPI Instructions ................................................................................................. 8
7.1.2 Dual SPI Instructions ........................................................................................................ 8
7.1.3 Hold Function ................................................................................................................... 8
7.2 WRITE PROTECTION .................................................................................................... 9
7.2.1 Write Protect Features ...................................................................................................... 9
8. CONTROL AND STATUS REGISTERS ................................................................................... 10
8.1 STATUS REGISTER .................................................................................................... 10
8.1.1 BUSY .............................................................................................................................. 10
8.1.2 Write Enable Latch (WEL) .............................................................................................. 10
8.1.3 Block Protect Bits (BP1, BP0) ........................................................................................ 10
8.1.4 Top/Bottom Block Protect (TB) ....................................................................................... 10
8.1.5 Reserved Bits ................................................................................................................. 11
8.1.6 Status Register Protect (SRP) ........................................................................................ 11
8.1.7 Status Register Memory Protection ................................................................................ 12
INSTRUCTIONS ....................................................................................................................... 13
8.1.8 Manufacturer and Device Identification .......................................................................... 13
8.1.9 Instruction Set (1) ............................................................................................................. 14
8.1.10 Write Enable (06h) ........................................................................................................ 15
8.1.11 Write Enable for Volatile Status Register (50h) ............................................................ 15
8.1.12 Write Disable (04h) ....................................................................................................... 16
8.1.13 Read Status Register (05h) .......................................................................................... 16
8.1.14 Write Status Register (01h) .......................................................................................... 17
8.1.15 Read Data (03h) ........................................................................................................... 18
8.1.16 Fast Read (0Bh) ........................................................................................................... 19
8.1.17 Fast Read Dual Output (3Bh) ....................................................................................... 20
8.1.18 Fast Read Dual I/O (BBh) ............................................................................................. 21
8.1.19 Continuous Read Mode Bits (M7-0) ............................................................................. 23
8.1.20 Continuous Read Mode Reset (FFFFh) ....................................................................... 23
8.1.21 Page Program (02h) ..................................................................................................... 24
8.1.22 Sector Erase (20h) ....................................................................................................... 25
W25X10CL
Publication Release Date: February 17, 2014
- 3 - Revision G
8.1.23 32KB Block Erase (52h) ............................................................................................... 26
8.1.24 Block Erase (D8h) ........................................................................................................ 27
8.1.25 Chip Erase (C7h or 60h) ............................................................................................... 28
8.1.26 Power-down (B9h) ........................................................................................................ 29
8.1.27 Release Power-down / Device ID (ABh) ....................................................................... 30
8.1.28 Read Manufacturer / Device ID (90h) ........................................................................... 32
8.1.29 Read Manufacturer / Device ID Dual I/O (92h) ............................................................. 33
8.1.30 Read Unique ID Number (4Bh) .................................................................................... 34
8.1.31 JEDEC ID (9Fh)............................................................................................................ 35
9. ELECTRICAL CHARACTERISTICS ......................................................................................... 36
9.1 Absolute Maximum Rating(1) ....................................................................................... 36
9.2 Operating Ranges ......................................................................................................... 36
9.3 Power-up Timing and Write Inhibit Threshold .............................................................. 37
9.4 DC Electrical Characteristics ........................................................................................ 38
9.5 AC Measurement Conditions ........................................................................................ 39
9.6 AC Electrical Characteristics ........................................................................................ 40
AC Electrical Characteristics (cont’d) ........................................................................................ 41
9.7 Serial Output Timing ..................................................................................................... 42
9.8 Serial Input Timing ........................................................................................................ 42
9.9 HOLD Timing ................................................................................................................ 42
9.10 WP Timing .................................................................................................................... 42
10. PACKAGE SPECIFICATION .................................................................................................... 43
10.1 8-Pin SOIC 150-mil (Package Code SN) ...................................................................... 43
10.2 8-Pad USON 2x3-mm (Package Code UX) .................................................................. 44
11. ORDERING INFORMATION(1) .................................................................................................. 45
11.1 Valid Part Numbers and Top Side Marking .................................................................. 46
12. REVISION HISTORY ................................................................................................................ 47
W25X10CL
Publication Release Date: February 17, 2014
- 4 - Revision G
1. GENERAL DESCRIPTION
The W25X10CL (1M-bit) Serial Flash memories provide a storage solution for systems with limited
space, pins and power. The 25X series offers flexibility and performance well beyond ordinary Serial
Flash devices. They are ideal for code download applications as well as storing voice, text and data.
The devices operate on a single 2.3V to 3.6V power supply with current consumption as low as 1mA
active and 1µA for power-down. All devices are offered in space-saving packages.
The W25X10CL arrays are organized into 512 programmable pages of 256-bytes each. Up to 256
bytes can be programmed at a time. The W25X10CL have 32 erasable sectors, 4 erasable 32KB
blocks and 2 erasable 64KB blocks respectively. The small 4KB sectors allow for greater flexibility in
applications that require data and parameter storage. (See figure 2.)
The W25X10CL support the standard Serial Peripheral Interface (SPI), and a high performance dual
output as well as Dual I/O SPI: Serial Clock, Chip Select, Serial Data DI (I/O0), DO (I/O1). SPI clock
frequencies up to 104MHz are supported allowing equivalent clock rates of 208MHz when using the
Fast Read Dual Output instruction. These transfer rates are comparable to those of 8 and 16-bit
Parallel Flash memories. The Continuous Read Mode allows for efficient memory access with as few
as 16-clocks of instruction-overhead to read a 24-bit address, allowing true XIP (execute in place)
operation.
A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control
features, provide further control flexibility. Additionally, the device supports JEDEC standard
manufacturer and device identification with a 64-bit Unique Serial Number.
2. FEATURES
Family of Serial Flash Memories
– W25X10CL: 1M-bit/128K-byte (131,072)
– 256-bytes per programmable page
– Uniform erasable 4KB, 32KB & 64KB regions.
SPI with Single / Dual Outputs / I/O
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
Data Transfer up to 208M-bits / second
– Clock operation to 104MHz
– 208MHz equivalent Dual I/O SPI
– Auto-increment Read capability
Efficient “Continuous Read Mode”
– Low Instruction overhead
– Continuous Read
– As few as 16 clocks to address memory
– Allows true XIP (execute in place) operation
Software and Hardware Write Protection
– Write-Protect all or portion of memory
– Enable/Disable protection with /WP pin
– Top or bottom array protection
Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4/32/64-kbytes)
– Page program up to 256 bytes <1ms
– More than 100,000 erase/write cycles
– More than 20-year data retention
Low Power, Wide Temperature Range
– Single 2.3V to 3.6V supply
– 1mA active current, <1µA Power-down(typ.)
– -40° to +85°C operating range
Space Efficient Packaging
– 8-pin SOIC
– 8-pad USON 2x3-mm
– Contact Winbond for KGD and other options
W25X10CL
Publication Release Date: February 17, 2014
- 5 - Revision G
3. PIN CONFIGURATION SOIC 150-MIL
Figure 1a. W25X10CL Pin Assignments, 8-pin SOIC 150-mil (Package Code SN)
4. PAD CONFIGURATION USON 2X3-MM
Figure 1b. W25X10CL Pad Assignments USON 2x3-MM (Package Code UX)
5. PIN DESCRIPTION SOIC AND USON 2X3-MM
PIN NO.
PIN NAME
I/O
FUNCTION
1
/CS
I
Chip Select Input
2
DO (IO1)
I/O
Data Input / Output(1)
3
/WP
I
Write Protect Input
4
GND
Ground
5
DI (IO0)
I/O
Data Input / Output(1)
6
CLK
I
Serial Clock Input
7
/HOLD
I
Hold Input
8
VCC
Power Supply
Note:
1 IO0 and IO1 are used for Standard and Dual SPI instructions
W25X10CL
Publication Release Date: February 17, 2014
- 6 - Revision G
5.1 Package Types
W25X10CL are offered in 8-pin plastic 150-mil width SOIC (package code SN), and 2x3-mm USON
(package code UX). Refer to see figures 1a and 1b, respectively.
5.2 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is
deselected and the Serial Data Output (DO, or IO0, IO1) pins are at high impedance. When
deselected, the devices power consumption will be at standby levels unless an internal erase,
program or write status register cycle is in progress. When /CS is brought low the device will be
selected, power consumption will increase to active levels and instructions can be written to and data
read from the device. After power-up, /CS must transition from high to low before a new instruction will
be accepted. The /CS input must track the VCC supply level at power-up (see “Power-up Timing and
Write inhibit threshold” and Figure 26). If needed, a pull-up resister on /CS can be used to accomplish
this.
5.3 Serial Data Input, Output and IOs (DI, DO, IO0 and IO1)
The W25X10CL support standard SPI and Dual SPI operation. Standard SPI instructions use the
unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising
edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to read
data or status from the device on the falling edge of CLK.
Dual SPI instructions use the bidirectional IO pins to serially write instructions, addresses or data to the
device on the rising edge of CLK and read data or status from the device on the falling edge of CLK.
5.4 Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (TB, BP1 and BP0) bits and Status Register
Protect (SRP) bit, a portion or the entire memory array can be hardware protected. The /WP pin is
active low.
5.5 HOLD (/HOLD)
The Hold (/HOLD) pin allows the device to be paused while it is actively selected. When /HOLD is
brought low, while /CS is low, the DO pin will be at high impedance and signals on the DI and CLK
pins will be ignored (don’t care). When /HOLD is brought high, device operation can resume. The
/HOLD function can be useful when multiple devices are sharing the same SPI signals.
5.6 Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations.
W25X10CL
Publication Release Date: February 17, 2014
- 7 - Revision G
6. BLOCK DIAGRAM
Figure 2. W25X10CL Serial Flash Memory Block Diagram
W25X10CL
Publication Release Date: February 17, 2014
- 8 - Revision G
7. FUNCTIONAL DESCRIPTION
7.1 SPI OPERATIONS
7.1.1 Standard SPI Instructions
The W25X10CL are accessed through an SPI compatible bus consisting of four signals: Serial Clock
(CLK), Chip Select (/CS), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI
instructions use the DI input pin to serially write instructions, addresses or data to the device on the
rising edge of CLK. The DO output pin is used to read data or status from the device on the falling
edge CLK.
SPI bus operation Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0
and Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and
data is not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low on the
falling and rising edges of /CS. For Mode 3 the CLK signal is normally high on the falling and rising
edges of /CS.
7.1.2 Dual SPI Instructions
The W25X10CL support Dual SPI operation when using the “Fast Read Dual Output (3Bh)” and “Fast
Read Dual I/O (BBh)” instructions. These instructions allow data to be transferred to or from the device
at two to three times the rate of ordinary Serial Flash devices. The Dual SPI Read instructions are
ideal for quickly downloading code to RAM upon power-up (code-shadowing) or for executing non-
speed-critical code directly from the SPI bus (XIP). When using Dual SPI instructions, the DI and DO
pins become bidirectional I/O pins: IO0 and IO1.
7.1.3 Hold Function
The /HOLD signal allows the W25X10CL operation to be paused while it is actively selected (when
/CS is low). The /HOLD function may be useful in cases where the SPI data and clock signals are
shared with other devices. For example, consider if the page buffer was only partially written when a
priority interrupt requires use of the SPI bus. In this case the /HOLD function can save the state of the
instruction and the data in the buffer so programming can resume where it left off once the bus is
available again.
To initiate a /HOLD condition, the device must be selected with /CS low. A /HOLD condition will
activate on the falling edge of the /HOLD signal if the CLK signal is already low. If the CLK is not
already low the /HOLD condition will activate after the next falling edge of CLK. The /HOLD condition
will terminate on the rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not
already low the /HOLD condition will terminate after the next falling edge of CLK.
During a /HOLD condition, the Serial Data Output (DO) is high impedance, and Serial Data
Input/Output (DI) and Serial Clock (CLK) are ignored. The Chip Select (/CS) signal should be kept
active (low) for the full duration of the /HOLD operation to avoid resetting the internal logic state of the
device.
W25X10CL
Publication Release Date: February 17, 2014
- 9 - Revision G
7.2 WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and
other adverse system conditions that may compromise data integrity. To address this concern, the
W25X10CL provide several means to protect data from inadvertent writes.
7.2.1 Write Protect Features
Device resets when VCC is below threshold.
Time delay write disable after Power-up.
Write enable/disable instructions.
Automatic write disable after program and erase.
Software and Hardware (/WP pin) write protection using Status Register.
Write Protection using Power-down instruction.
Upon power-up or at power-down, the W25X10CL will maintain a reset condition while VCC is below
the threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 26). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC
voltage exceeds VWI, all program and erase related instructions are further disabled for a time delay of
tPUW. This includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the
Write Status Register instructions. Note that the chip select pin (/CS) must track the VCC supply level
at power-up until the VCC-min level and tVSL time delay is reached. If needed, a pull-up resister on
/CS can be used to accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register
Write Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page
Program, Sector Erase, Chip Erase or Write Status Register instruction will be accepted. After
completing a program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared
to a write-disabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting
the Status Register Protect (SRP) and Block Protect (TB, BP1 and BP0) bits. These allow a portion
small as 4KB sector or the entire memory array to be configured as read only. Used in conjunction
with the Write Protect (/WP) pin, changes to the Status Register can be enabled or disabled under
hardware control. See Status Register for further information. Additionally, the Power-down instruction
offers an extra level of write protection as all instructions are ignored except for the Release Power-
down instruction.
W25X10CL
Publication Release Date: February 17, 2014
- 10 - Revision G
8. CONTROL AND STATUS REGISTERS
The Read Status Register instruction can be used to provide status on the availability of the Flash
memory array, if the device is write enabled or disabled, and the state of write protection. The Write
Status Register instruction can be used to configure the device write protection features.
8.1 STATUS REGISTER
8.1.1 BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing
a Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction. During
this time the device will ignore further instructions except for the Read Status Register instruction (see
tW, tPP, tSE, tBE, and tCE in AC Characteristics). When the program, erase or write status register
instruction has completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for
further instructions.
8.1.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to a 1 after executing
a Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is write disabled. A
write disable state occurs upon power-up or after any of the following instructions finished: Write
Disable, Page Program, Sector Erase, Block Erase, Chip Erase and Write Status Register.
8.1.3 Block Protect Bits (BP1, BP0)
The Block Protect Bits (BP1 and BP0) are non-volatile read/write bits in the status register (S3 and S2)
that provide Write Protection control and status. Block Protect bits can be set using the Write Status
Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array can be
protected from Program and Erase instructions (see Status Register Memory Protection table). The
factory default setting for the Block Protection Bits is 0, none of the array protected. The Block Protect
bits cannot be written to if the Status Register Protect (SRP) bit is set to 1 and the Write Protect (/WP)
pin is low.
8.1.4 Top/Bottom Block Protect (TB)
The Top/Bottom bit (TB) controls if the Block Protect Bits (BP1, BP0) protect from the Top (TB=0) or
the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table. The TB bit is
non-volatile and the factory default setting is TB=0. The TB bit can be set with the Write Status
Register Instruction provided that the Write Enable instruction has been issued. The TB bit cannot be
written to if the Status Register Protect (SRP) bit is set to 1 and the Write Protect (/WP) pin is low.
W25X10CL
Publication Release Date: February 17, 2014
- 11 - Revision G
8.1.5 Reserved Bits
Status register bit location S6 and S4 are reserved for future use. Current devices will read 0 for this
bit location. It is recommended to mask out the reserved bit when testing the Status Register. Doing
this will ensure compatibility with future devices.
8.1.6 Status Register Protect (SRP)
The Status Register Protect (SRP) bit is a non-volatile read/write bit in status register (S7) that can be
used in conjunction with the Write Protect (/WP) pin to disable writes to status register. When the SRP
bit is set to a 0 state (factory default) the /WP pin has no control over status register. When the SRP
pin is set to a 1, the Write Status Register instruction is locked out while the /WP pin is low. When the
/WP pin is high the Write Status Register instruction is allowed.
SRP
/WP
Status
Register
Description
0
X
Software
Protection
/WP pin has no control, The Status register can be written to
after a Write Enable instruction WEL = 1. [Factory Default]
1
0
Hardware
Protected
When /WP pin is low the Status Register locked and can’t be
written to.
1
1
Hardware
Unprotected
When /WP pin is high the status register is unlocked and can
be written to after a Write Enable instruction WEL = 1.
S7 S6 S5 S4 S3 S2 S1 S0
SRP BP1 BP0 WEL BUSY
WRITE ENABLE LATCH
ERASE/WRITE IN PROGRESS
S7 S6 S5 S4 S3 S2 S1 S0
BLOCK PROTECT BITS
STATUS REGISTER PROTECT
(Non-volatile)
(volatile)
(R)
TB(R)
(Non-volatile)
TOP/BOTTOM PROTECT
(Non-volatile)
RESERVED
(volatile)
Figure 3. Status Register Bit Locations
W25X10CL
Publication Release Date: February 17, 2014
- 12 - Revision G
8.1.7 Status Register Memory Protection
STATUS REGISTER(1)
W25X10CL (1M-BIT) MEMORY PROTECTION
TB
BP1
BP0
BLOCK(S)
ADDRESSES
DENSITY
PORTION
x
0
0
NONE
NONE
NONE
NONE
0
0
1
1
010000h - 01FFFFh
64KB
Upper 1/2
1
0
1
0
000000h - 00FFFFh
64KB
Lower 1/2
x
1
x
0 and 1
000000h - 01FFFFh
128KB
ALL
Note:
1. x = don’t care
2. If any erase or program command specifies a memory region that contains protected data portion, this
command will be ignore.
W25X10CL
Publication Release Date: February 17, 2014
- 13 - Revision G
INSTRUCTIONS
The instruction set of the W25X10CL consists of twenty basic instructions that are fully controlled
through the SPI bus (see Instruction Set table). Instructions are initiated with the falling edge of Chip
Select (/CS). The first byte of data clocked into the DI input provides the instruction code. Data on the
DI input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes,
data bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed
with the rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in
figures 4 through 25. All read instructions can be completed after any clocked bit. However, all
instructions that Write, Program or Erase must complete on a byte boundary (CS driven high after a
full 8-bits have been clocked) otherwise the instruction will be terminated. This feature further protects
the device from inadvertent writes. Additionally, while the memory is being programmed or erased, or
when the Status Register is being written, all instructions except for Read Status Register will be
ignored until the program or erase cycle has completed.
8.1.8 Manufacturer and Device Identification
MANUFACTURER ID
(M7-M0)
Winbond Serial Flash
EFh
Device ID
(ID7-ID0)
(ID15-ID0)
Instruction
ABh, 90h, 92h
9Fh
W25X10CL
10h
3011h
W25X10CL
Publication Release Date: February 17, 2014
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8.1.9 Instruction Set (1)
INSTRUCTION
NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
BYTE 6
N-BYTES
Write Enable
06h
Write Enable for
Volatile Status
Register
50h
Write Disable
04h
Read Status Register
05h
(S7–S0)(1)
(2)
Write Status Register
01h
(S7–S0)
Read Data
03h
A23–A16
A15–A8
A7–A0
(D7–D0)
(Next byte)
continuous
Fast Read
0Bh
A23–A16
A15–A8
A7–A0
dummy
(D7–D0)
(Next Byte)
continuous
Fast Read Dual
Output
3Bh
A23–A16
A15–A8
A7–A0
dummy
(D7-D0, …)(5)
(one byte per
4 clocks,
continuous)
Fast Read Dual I/O
BBh
A23-A8(6)
A7-A0, M7-
M0(6)
(D7-D0, …)(5)
Page Program
02h
A23–A16
A15–A8
A7–A0
(D7–D0)
(Next byte)
Up to 256
bytes
Sector Erase (4KB)
20h
A23–A16
A15–A8
A7–A0
Block Erase (32KB)
52h
A23–A16
A15–A8
A7–A0
Block Erase (64KB)
D8h
A23–A16
A15–A8
A7–A0
Chip Erase
C7h/60h
Power-down
B9h
Release Power-down
/ Device ID
ABh
dummy
dummy
dummy
(ID7-ID0)(4)
Manufacturer/
Device ID (3)
90h
dummy
dummy
00h
(M7-M0)
(ID7-ID0)
Manufacturer/Device
ID by Dual I/O
92h
A23-A8
A7-A0,
M[7:0]
(MF[7:0],
ID[7:0])
JEDEC ID
9Fh
(M7-M0)
Manufacturer
(ID15-ID8)
Memory
Type
(ID7-ID0)
Capacity
Read Unique ID
4Bh
dummy
dummy
dummy
dummy
(ID63-ID0)
Notes:
1 Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from
the device on the DO pin.
2 The Status Register contents will repeat continuously until /CS terminates the instruction.
3 See Manufacturer and Device Identification table for Device ID information.
4 The Device ID will repeat continuously until /CS terminates the instruction.
5 Dual Output and Dual I/O data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
6 Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
W25X10CL
Publication Release Date: February 17, 2014
- 15 - Revision G
8.1.10 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to
a 1. The WEL bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase
and Write Status Register instruction. The Write Enable instruction is entered by driving /CS low,
shifting the instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then
driving /CS high.
Figure 4. Write Enable Instruction Sequence Diagram
8.1.11 Write Enable for Volatile Status Register (50h)
The non-volatile Status Register bits described in section 8.1 can also be written to as volatile bits.
This gives more flexibility to change the system configuration and memory protection schemes quickly
without waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status
Register non-volatile bits. To write the volatile values into the Status Register bits, the Write Enable for
Volatile Status Register (50h) instruction must be issued prior to a Write Status Register (01h)
instruction. Write Enable for Volatile Status Register instruction (Figure 5) will not set the Write Enable
Latch (WEL) bit, it is only valid for the Write Status Register instruction to change the volatile Status
Register bit values.
Figure 5. Write Enable for Volatile Status Register Instruction Sequence Diagram
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Mode 0
Mode 3
Instruction (06h)
High Impedance
Instruction (50h)
W25X10CL
Publication Release Date: February 17, 2014
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8.1.12 Write Disable (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register
to a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h”
into the DI pin and then driving /CS high. WEL bit is automatically reset after Power-up and upon
completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip Erase
instructions. Write Disable instruction can also be used to invalidate the Write Enable for Volatile
Status Register instruction
Figure 6. Write Disable Instruction Sequence Diagram
8.1.13 Read Status Register (05h)
The Read Status Register instruction allows the 8-bit Status Register to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” into the DI pin on the rising edge of
CLK. The status register bits are then shifted out on the DO pin at the falling edge of CLK with most
significant bit (MSB) first as shown in figure 6. The Status Register bits are shown in figure 3 and
include the BUSY, WEL, BP1, BP0, TB and SRP bits (see description of the Status Register earlier in
this datasheet).
The Status Register instruction may be used at any time, even while a Program, Erase or Write Status
Register cycle is in progress. This allows the BUSY status bit to be checked to determine when the
cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 7. The instruction is completed by driving /CS high.
Figure 7. Read Status Register Instruction Sequence Diagram
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Mode 0
Mode 3
Instruction (04h)
High Impedance
W25X10CL
Publication Release Date: February 17, 2014
- 17 - Revision G
8.1.14 Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. A Write Enable
instruction must previously have been executed for the device to accept the Write Status Register
Instruction (Status Register bit WEL must equal 1). Once write enabled, the instruction is entered by
driving /CS low, sending the instruction code “01h”, and then writing the status register data byte as
illustrated in figure 8. The Status Register bits are shown in figure 3 and described earlier in this
datasheet.
Only non-volatile Status Register bits SRP, TB, BP1 and BP0 (bits 7, 5, 3 and 2) can be written to. All
other Status Register bit locations are read-only and will not be affected by the Write Status Register
instruction.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Write Status Register instruction will not be executed. After /CS is driven high, the self-timed
Write Status Register cycle will commence for a time duration of tW (See AC Characteristics). While
the Write Status Register cycle is in progress, the Read Status Register instruction may still accessed
to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle and a
0 when the cycle is finished and ready to accept other instructions again. After the Write Register
cycle has finished the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
The Write Status Register instruction allows the Block Protect bits (TB, BP1 and BP0) to be set for
protecting all, a portion, or none of the memory from erase and program instructions. Protected areas
become read-only (see Status Register Memory Protection table). The Write Status Register
instruction also allows the Status Register Protect bit (SRP) to be set. This bit is used in conjunction
with the Write Protect (/WP) pin to disable writes to the status register. When the SRP bit is set to a 0
state (factory default) the /WP pin has no control over the status register. When the SRP pin is set to a
1, the Write Status Register instruction is locked out while the /WP pin is low. When the /WP pin is
high the Write Status Register instruction is allowed.
During volatile Status Register write operation (50h combined with 01h), after /CS is driven high, the
Status Register bits will be refreshed to the new values within the time period of tSHSL2 (See AC
Characteristics). BUSY bit will remain 0 during the Status Register bit refresh period.
Figure 8. Write Status Register Instruction Sequence Diagram
W25X10CL
Publication Release Date: February 17, 2014
- 18 - Revision G
8.1.15 Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the memory.
The instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h”
followed by a 24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the
rising edge of the CLK pin. After the address is received, the data byte of the addressed memory
location will be shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first.
The address is automatically incremented to the next higher address after each byte of data is shifted
out allowing for a continuous stream of data. This means that the entire memory can be accessed with
a single instruction as long as the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in figure 9. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of
fR (see AC Electrical Characteristics).
Figure 9. Read Data Instruction Sequence Diagram
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (03h)
High Impedance
8 9 10 28 29 30 31 32 33 34 35 36 37 38 39
765432107
24-Bit Address
23 22 21 3 2 1 0
Data Out 1
*
*
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
- 19 - Revision G
8.1.16 Fast Read (0Bh)
The Fast Read instruction is similar to the Read Data instruction except that it can operate at the
highest possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding
eight “dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the
devices internal circuits additional time for setting up the initial address. During the dummy clocks the
data value on the DI pin is a “don’t care”.
Figure 10. Fast Read Instruction Sequence Diagram
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (0Bh)
High Impedance
8 9 10 28 29 30 31
24-Bit Address
23 22 21 3 2 1 0
Data Out 1
*
/CS
CLK
DI
(IO0)
DO
(IO1)
32 33 34 35 36 37 38 39
Dummy Clocks
High Impedance
40 41 42 44 45 46 47 48 49 50 51 52 53 54 55
765432107
Data Out 2
*
76543210
*
4331
0
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
- 20 - Revision G
8.1.17 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction
except that data is output on two pins, IO0 and IO1. This allows data to be transferred from the
W25X10CL at twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal
for quickly downloading code from Flash to RAM upon power-up or for applications that cache code-
segments to RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 11. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy
clocks is “don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the
first data out clock.
Figure 11. Fast Read Dual Output Instruction Sequence Diagram
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (3Bh)
High Impedance
8 9 10 28 29 30
32 33 34 35 36 37 38 39
6420
24-Bit Address
23 22 21 3 2 1 0
*
*
31
31
/CS
CLK
DI
(IO0)
DO
(IO1)
Dummy Clocks
0
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
7531
High Impedance
6 4 2 0
7 5 3 1
6420
7531
6420
7531
IO0 switches from
Input to Output
6
7
Data Out 1 *Data Out 2 *Data Out 3 *Data Out 4
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
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8.1.18 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO
pins, IO0 and IO1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to
input the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for
code execution (XIP) directly from the Dual SPI in some applications.
Fast Read Dual I/O with “Continuous Read Mode”
The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 12a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t
care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out
clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O instruction (after
/CS is raised and then lowered) does not require the BBh instruction code, as shown in figure 12b.
This reduces the instruction sequence by eight clocks and allows the Read address to be immediately
entered after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the
next instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus
returning to normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset
(M7-0) before issuing normal instructions (See 9.2.12 for detail descriptions).
Figure 12a. Fast Read Dual I/O Instruction Sequence (Initial instruction or previous M5-4 10)
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (BBh)
8 9 10 12 13 14
24 25 26 27 28 29 30 31
6 4 2 0
*
*
23
/CS
CLK
DI
(IO0)
DO
(IO1)
0
32 33 34 35 36 37 38 39
7 5 3 1 *
6420
7531
6420
7531
6 4 2 0
7 5 3 1
* *
IOs switch from
Input to Output
6
7
22 20 18 16
23 21 19 17
14 12 10 8
15 13 11 9
6420
7531
6 4 2 0
7 5 3 1
11 15 16 17 18 20 21 2219 23
1
A23-16 A15-8 A7-0 M7-0
Byte 1 Byte 2 Byte 3 Byte 4
= MSB
**
W25X10CL
Publication Release Date: February 17, 2014
- 22 - Revision G
Figure 12b. Fast Read Dual I/O Instruction Sequence (Previous instruction set M5-4 = 10)
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 8 9 10 12 13 14
24 25 26 27 28 29 30 31
6 4 2 0
*
*
15
/CS
CLK
DI
(IO0)
DO
(IO1)
0
7 5 3 1 *
6 4 2 0
7 5 3 1
6420
7531
6 4 2 0
7 5 3 1
* *
IOs switch from
Input to Output
6
7
22 20 18 16
23 21 19 17
14 12 10 8
15 13 11 9
6 4 2 0
7 5 3 1
6 4 2 0
7 5 3 1
11 15
1
A23-16 A15-8 A7-0 M7-0
Byte 1 Byte 2 Byte 3 Byte 4
01234567
16 17 18 20 21 2219 23
*
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
- 23 - Revision G
8.1.19 Continuous Read Mode Bits (M7-0)
The “Continuous Read Mode” bits are used in conjunction with the “Fast Read Dual I/O” instruction to
provide the highest random Flash memory access rate with minimum SPI instruction overhead, thus
allow true XIP (execute in place) to be performed on serial flash devices.
M7-0 need to be set by the Dual I/O Read instruction. M5-4 are used to control whether the 8-bit SPI
instruction code BBh is needed or not for the next command. When M5-4 = (1,0), the next command
will be treated same as the current Dual I/O Read command without needing the 8-bit instruction code;
when M5-4 do not equal to (1,0), the device returns to normal SPI mode, all commands can be
accepted. M7-6 and M3-0 are reserved bits for future use, either 0 or 1 values can be used.
8.1.20 Continuous Read Mode Reset (FFFFh)
Continuous Read Mode Reset instruction can be used to set M4 = 1, thus the device will release the
Continuous Read Mode and return to normal SPI operation, as shown in figure 13.
Figure 13. Continuous Read Mode Reset for Fast Read Dual I/O
Since W25X10CL does not have a hardware Reset pin, so if the controller resets while W25X10CL
are set to Continuous Mode Read, the W25X10CL will not recognize any initial standard SPI
instructions from the controller. To address this possibility, it is recommended to issue a Continuous
Read Mode Reset instruction as the first instruction after a system Reset. Doing so will release the
device from the Continuous Read Mode and allow Standard SPI instructions to be recognized.
To reset “Continuous Read Mode” during Dual I/O operation, sixteen clocks are needed to shift in
instruction “FFFFh”.
11
0 2
/CS
Mode 0
Mode 3 46810 12
Mode 0
Mode 3
CLK
IO0
IO
Mode Bit Reset
for Dual I/O
Don’t Care
FFFFh
/CS
Mode 0
Mode 3
CLK
IO0
IO Don’t Care
1 3 5 7 9 11 13 14 15
W25X10CL
Publication Release Date: February 17, 2014
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8.1.21 Page Program (02h)
The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed
at previously erased (FFh) memory locations. A Write Enable instruction must be executed before the
device will accept the Page Program Instruction (Status Register bit WEL = 1). The instruction is
initiated by driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address
(A23-A0) and at least one data byte, into the DI pin. The /CS pin must be held low for the entire length
of the instruction while data is being sent to the device.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address
bits) should be set to 0. If the last address byte is not zero, and the number of clocks exceeds the
remaining page length, the addressing will wrap to the beginning of the page. In some cases, less
than 256 bytes (a partial page) can be programmed without having any effect on other bytes within the
same page. One condition to perform a partial page program is that the number of clocks cannot
exceed the remaining page length. If more than 256 bytes are sent to the device the addressing will
wrap to the beginning of the page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last
byte has been latched. If this is not done the Page Program instruction will not be executed. After /CS
is driven high, the self-timed Page Program instruction will commence for a time duration of tpp (See
AC Characteristics). While the Page Program cycle is in progress, the Read Status Register
instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during
the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept
other instructions again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit
in the Status Register is cleared to 0. The Page Program instruction will not be executed if the
addressed page is protected by the Block Protect (BP1, and BP0) bits (see Status Register Memory
Protection table).
Figure 14. Page Program Instruction Sequence Diagram
W25X10CL
Publication Release Date: February 17, 2014
- 25 - Revision G
8.1.22 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state
of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure
2). The Sector Erase instruction sequence is shown in figure 15.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector
Erase instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Sector Erase
cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector
Erase instruction will not be executed if the addressed page is protected by the Block Protect (TB,
BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 15. Sector Erase Instruction Sequence Diagram
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (20h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
- 26 - Revision G
8.1.23 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of
all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Block
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2).
The Block Erase instruction sequence is shown in figure 16.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block
Erase instruction will commence for a time duration of tBE1 (See AC Characteristics). While the Block
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Block Erase cycle
has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase
instruction will not be executed if the addressed page is protected by the Block Protect (TB, BP1, and
BP0) bits (see Status Register Memory Protection table).
Figure 16. 32KB Block Erase Instruction Sequence Diagram
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (52h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
- 27 - Revision G
8.1.24 Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of
all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Block
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure 2).
The Block Erase instruction sequence is shown in figure 17.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block
Erase instruction will commence for a time duration of tBE (See AC Characteristics). While the Block
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Block Erase cycle
has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase
instruction will not be executed if the addressed page is protected by the Block Protect (TB, BP1, and
BP0) bits (see Status Register Memory Protection table).
Figure 17. Block Erase Instruction Sequence Diagram
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (D8h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
- 28 - Revision G
8.1.25 Chip Erase (C7h or 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A
Write Enable instruction must be executed before the device will accept the Chip Erase Instruction
(Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and
shifting the instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure 18.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip
Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction
will commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in
progress, the Read Status Register instruction may still be accessed to check the status of the BUSY
bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is
ready to accept other instructions again. After the Chip Erase cycle has finished the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed
if any page is protected by the Block Protect (TB, BP1 and BP0) bits (see Status Register Memory
Protection table).
Figure 18. Chip Erase Instruction Sequence Diagram
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (C7h/60h)
High Impedance
Mode 0
Mode 3
W25X10CL
Publication Release Date: February 17, 2014
- 29 - Revision G
8.1.26 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in figure 19.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-
down instruction will not be executed. After /CS is driven high, the power-down state will entered
within the time duration of tDP (See AC Characteristics). While in the power-down state only the
Release from Power-down / Device ID instruction, which restores the device to normal operation, will
be recognized. All other instructions are ignored. This includes the Read Status Register instruction,
which is always available during normal operation. Ignoring all but one instruction makes the Power
Down state a useful condition for securing maximum write protection. The device always powers-up in
the normal operation with the standby current of ICC1.
Figure 19. Deep Power-down Instruction Sequence Diagram
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (B9h)
Mode 0
Mode 3
tDP
Power-down currentStand-by current
W25X10CL
Publication Release Date: February 17, 2014
- 30 - Revision G
8.1.27 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, obtain the devices electronic identification (ID) number
or do both.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in figure 20. Release from power-
down will take the time duration of tRES1 (See AC Characteristics) before the device will resume
normal operation and other instructions are accepted. The /CS pin must remain high during the tRES1
time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated
by driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The
Device ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in figure 20. The Device ID values for the W25X10CL are listed in Manufacturer and Device
Identification table. The Device ID can be read continuously. The instruction is completed by driving
/CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction
is the same as previously described, and shown in figure 21, except that after /CS is driven high it
must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the
device will resume normal operation and other instructions will be accepted.
If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write
cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on
the current cycle
Figure 20. Release Power-down Instruction Sequence
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (ABh)
Mode 0
Mode 3
tRES1
Power-down current Stand-by current
W25X10CL
Publication Release Date: February 17, 2014
- 31 - Revision G
Figure 21. Release Power-down / Device ID Instruction Sequence Diagram
tRES2
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (ABh)
High Impedance
8 9 29 30 31
3 Dummy Bytes
23 22 210
*
Mode 0
Mode 3
76543210
*
32 33 34 35 36 37 38
Device ID
Power-down current Stand-by current
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
- 32 - Revision G
8.1.28 Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down/
Device ID instruction that provides both JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device
ID instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code
“90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond
(EFh) and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first
as shown in figure 22. The Device ID values for the W25X10CL are listed in Manufacturer and Device
Identification table. If the 24-bit address is initially set to 000001h the Device ID will be read first and
then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read continuously,
alternating from one to the other. The instruction is completed by driving /CS high.
Figure 22. Read Manufacturer / Device ID Diagram
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (90h)
High Impedance
8 9 10 28 29 30 31
Address (000000h)
23 22 21 3 2 1 0
Device ID
*
/CS
CLK
DI
(IO0)
DO
(IO1)
32 33 34 35 36 37 38 39
Manufacturer ID (EFh)
40 41 42 44 45 46
7 6 5 4 3 2 1 0
*
4331
0
Mode 0
Mode 3
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
- 33 - Revision G
8.1.29 Read Manufacturer / Device ID Dual I/O (92h)
The Manufacturer / Device ID Dual I/O instruction is an alternative to the Read Manufacturer/Device
ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID at 2x
speed.
The Read Manufacturer / Device ID Dual I/O instruction is similar to the Fast Read Dual I/O
instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “92h”
followed by a 24-bit address (A23-A0) of 000000h, 8-bit Continuous Read Mode Bits, with the
capability to input the Address bits two bits per clock. After which, the Manufacturer ID for Winbond
(EFh) and the Device ID are shifted out 2 bits per clock on the falling edge of CLK with most significant
bits (MSB) first as shown in figure 28. The Device ID values for the W25X10CL are listed in
Manufacturer and Device Identification table. If the 24-bit address is initially set to 000001h the Device
ID will be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can
be read continuously, alternating from one to the other. The instruction is completed by driving /CS
high.
Figure 23. Read Manufacturer / Device ID Dual I/O Diagram
Note:
1. “Continuous Read Mode” bits M7-0 must be set to FXh to be compatible with Fast Read Dual I/O instruction.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (92h)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
7531
* *
6420
7 5 3 1
6 4 2 0
7531
6420
7 5 3 1
6 4 2 0
23
* *
A23-16 A15-8 A7-0 (00h) M7-0
/CS
CLK
DI
(IO0)
DO
(IO1)
24 25 26 27 28 29 30 31 32 33 34 36 37 383523
0
Mode 0
Mode 3
7 5 3 1
6 4 2 0
7531
6420
7531
6420
7 5 3
6 4 2
1
0
1
MFR ID Device ID MFR ID
(repeat) Device ID
(repeat)
IOs switch from
Input to Output
* ** *
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
- 34 - Revision G
8.1.30 Read Unique ID Number (4Bh)
The Read Unique ID Number instruction accesses a factory-set read-only 64-bit number that is unique
to each W25X10CL device. The ID number can be used in conjunction with user software methods to
help prevent copying or cloning of a system. The Read Unique ID instruction is initiated by driving the
/CS pin low and shifting the instruction code “4Bh” followed by a four bytes of dummy clocks. After
which, the 64-bit ID is shifted out on the falling edge of CLK as shown in figure 24.
Figure 24. Read Unique ID Number Instruction Sequence
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (4Bh)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
/CS
CLK
DI
(IO0)
DO
(IO1)
24 25 26 27 28 29 30 31 32 33 34 36 37 383523
Mode 0
Mode 3
*
Dummy Byte 1 Dummy Byte 2
39 40 41 42
Dummy Byte 3 Dummy Byte 4
63 62 61 210
64-bit Unique Serial Number
100
101
102
High Impedance
= MSB
*
W25X10CL
Publication Release Date: February 17, 2014
- 35 - Revision G
8.1.31 JEDEC ID (9Fh)
For compatibility reasons, the W25X10CL provide several instructions to electronically determine the
identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard for SPI
compatible serial memories that was adopted in 2003.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “9Fh”. The
JEDEC assigned Manufacturer ID byte for Winbond (EFh) and two Device ID bytes, Memory Type
(ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the falling edge of CLK with most significant
bit (MSB) first as shown in figure 25. For memory type and capacity values refer to Manufacturer and
Device Identification table.
Figure 25. Read JEDEC ID
W25X10CL
Publication Release Date: February 17, 2014
- 36 - Revision G
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Rating(1)
PARAMETERS
SYMBOL
CONDITIONS
RANGE
UNIT
Supply Voltage
VCC
–0.6 to +4.6
V
Voltage Applied to Any Pin
VIO
Relative to Ground
–0.6 to VCC +0.4
V
Transient Voltage on any Pin
VIOT
<20nS Transient
Relative to Ground
–2.0V to VCC+2.0V
V
Storage Temperature
TSTG
–65 to +150
°C
Lead Temperature
TLEAD
See Note (2)
°C
Electrostatic Discharge Voltage
VESD
Human Body Model(3)
–2000 to +2000
V
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not
guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings
may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive
on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 ohms, R2=500 ohms).
9.2 Operating Ranges
PARAMETER
SYMBOL
CONDITIONS
SPEC
UNIT
MIN
MAX
Supply Voltage
VCC
FR = 80MHz, fR = 33MHz
FR = 104MHz, fR = 50MHz
2.3
2.7
2.7
3.6
V
Ambient Temperature,
Operating
TA
Industrial
–40
+85
°C
W25X10CL
Publication Release Date: February 17, 2014
- 37 - Revision G
9.3 Power-up Timing and Write Inhibit Threshold
PARAMETER
SYMBOL
SPEC
UNIT
MIN
MAX
VCC (min) to /CS Low
tVSL(1)
10
µs
Time Delay Before Write Instruction
tPUW(1)
5
ms
Write Inhibit Threshold Voltage
VWI(1)
1.0
2.0
V
Note:
1. These parameters are characterized only.
Figure 26a. Power-up Timing and Voltage Levels
Figure 26b. Power-up, Power-Down Requirement
W25X10CL
Publication Release Date: February 17, 2014
- 38 - Revision G
9.4 DC Electrical Characteristics
PARAMETER
SYMBOL
CONDITIONS
SPEC
UNIT
MIN
TYP
MAX
Input Capacitance
CIN(1)
VIN = 0V(2)
6
pF
Output Capacitance
Cout(1)
VOUT = 0V(2)
8
pF
Input Leakage
ILI
±2
µA
I/O Leakage
ILO
±2
µA
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
10
50
µA
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
1
5
µA
Current Read Data /
Dual Output 1MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
1/3
4/8
mA
Current Read Data /
Dual Output 33MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
4/5
8/10
mA
Current Read Data /
Dual Output 80MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
5/6
10/12
mA
Current Read Data /
Dual Output 104MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
6/7
12/14
mA
Current Write Status
Register
ICC4
/CS = VCC
8
12
mA
Current Page Program
ICC5
/CS = VCC
10
15
mA
Current Sector/Block
Erase
ICC6
/CS = VCC
10
15
mA
Current Chip Erase
ICC7
/CS = VCC
10
15
mA
Input Low Voltage
VIL
–0.5
VCCx0.3
V
Input High Voltage
VIH
VCCx0.7
V
Output Low Voltage
VOL
IOL = 100 µA
0.4
V
Output High Voltage
VOH
IOH = –100 µA
VCC–0.2
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA=25°C, VCC=3.0V.
2. Checker Board Pattern.
W25X10CL
Publication Release Date: February 17, 2014
- 39 - Revision G
9.5 AC Measurement Conditions
PARAMETER
SYMBOL
SPEC
UNIT
MIN
MAX
Load Capacitance
CL
30
pF
Input Rise and Fall Times
TR, TF
5
ns
Input Pulse Voltages
VIN
0.1 VCC to 0.9 VCC
V
Input Timing Reference Voltages
IN
0.3 VCC to 0.7 VCC
V
Output Timing Reference Voltages
OUT
0.5 VCC to 0.5 VCC
V
Note:
1. Output Hi-Z is defined as the point where data out is no longer driven.
Input Levels
0.9 VCC
0.1 VCC
0.5 VCC
Input and Output Timing
Reference Levels
Figure 27. AC Measurement I/O Waveform
W25X10CL
Publication Release Date: February 17, 2014
- 40 - Revision G
9.6 AC Electrical Characteristics
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
Clock frequency for all instructions,
except Read Data (03h)
2.7V-3.6V VCC & Industrial Temperature
FR
fc
D.C.
104
MHz
Clock frequency for all instructions,
except Read Data (03h)
2.3V-2.7V VCC & Industrial Temperature
FR
fc
D.C.
80
MHz
Clock freq. Read Data instruction 03h
2.7V-3.6V VCC & Industrial Temperature
fR
D.C.
50
MHz
Clock freq. Read Data instruction 03h
2.3V-2.7V VCC & Industrial Temperature
fR
D.C.
33
MHz
Clock High, Low Time, for Fast Read (0Bh, 3Bh) /
other instructions except Read Data (03h)
tCLH,
tCLL(1)
4
ns
Clock High, Low Time for Read Data (03h)
instruction
tCRLH,
tCRLL(1)
6
ns
Clock Rise Time peak to peak
tCLCH(2)
0.1
V/ns
Clock Fall Time peak to peak
tCHCL(2)
0.1
V/ns
/CS Active Setup Time relative to CLK
tSLCH
tCSS
5
ns
/CS Not Active Hold Time relative to CLK
tCHSL
5
ns
Data In Setup Time
tDVCH
tDSU
2
ns
Data In Hold Time
tCHDX
tDH
5
ns
/CS Active Hold Time relative to CLK
tCHSH
5
ns
/CS Not Active Setup Time relative to CLK
tSHCH
5
ns
/CS Deselect Time (for Array Read Array
Read)
tSHSL1
tCSH
50
ns
/CS Deselect Time (for Erase/Program Read
SR) Volatile Status Register Write Time
tSHSL2
tCSH
100
50
ns
Output Disable Time
tSHQZ(2)
tDIS
7
ns
Clock Low to Output Valid
tCLQV1
tV1
8
ns
Clock Low to Output Valid (for Read ID instructions)
tCLQV2
tV2
8
ns
Continued – next page
W25X10CL
Publication Release Date: February 17, 2014
- 41 - Revision G
AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
Output Hold Time
tCLQX
tHO
0
ns
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ(2)
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL(3)
20
ns
Write Protect Hold Time After /CS High
tSHWL(3)
100
ns
/CS High to Power-down Mode
tDP(2)
3
µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1(2)
3
µs
/CS High to Standby Mode with Electronic
Signature Read
tRES2(2)
1.8
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) (4)
tBP1
15
30
µs
Additional Byte Program Time (After First Byte) (4)
tBP2
2.5
5
µs
Page Program Time
tPP
0.4
0.8
ms
Sector Erase Time (4KB)
tSE
30
300
ms
Block Erase Time (32KB)
tBE1
120
800
ms
Block Erase Time (64KB)
tBE2
150
1,000
ms
Chip Erase Time W25X10CL
tCE
0.25
1
s
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP is set to 1.
4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number
of bytes programmed.
W25X10CL
Publication Release Date: February 17, 2014
- 42 - Revision G
9.7 Serial Output Timing
9.8 Serial Input Timing
9.9 /HOLD Timing
9.10 /WP Timing
/CS
CLK
IO
output
tCLQX tCLQV
tCLQX tCLQV tSHQZtCLL
LSB OUT
tCLH
MSB OUT
/CS
CLK
IO
input
tCHSL
MSB IN
tSLCH
tDVCH tCHDX
tSHCHtCHSH
tCLCH tCHCL
LSB IN
tSHSL
/CS
CLK
IO
output
/HOLD
tCHHL tHLCH
tCHHH
tHHCH
tHLQZ tHHQX
IO
input
/CS
CLK
/WP
tWHSL tSHWL
IO
input
Write Status Register is allowed Write Status Register is not allowed
W25X10CL
Publication Release Date: February 17, 2014
- 43 - Revision G
10. PACKAGE SPECIFICATION
10.1 8-Pin SOIC 150-mil (Package Code SN)
SYMBOL
MILLIMETERS
INCHES
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
c
0.19
0.25
0.008
0.010
E(3)
3.80
4.00
0.150
0.157
D(3)
4.80
5.00
0.188
0.196
e(2)
1.27 BSC
0.050 BSC
HE
5.80
6.20
0.228
0.244
Y(4)
-
0.10
-
0.004
L
0.40
1.27
0.016
0.050
∘
0°
10°
0°
10°
Notes:
1. Controlling dimensions: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package.
4. Formed leads coplanarity with respect to seating plane shall be within 0.004 inches.
L
θ
c
D
A1
A
e
b
SEATING PLANE
Y
0.25
GAUGE PLANE
EHE
4
1
58
L
θ
c
D
A1
A
e
bbb
SEATING PLANE
Y
0.25
GAUGE PLANE
EHE
EHE
4
1
58
W25X10CL
Publication Release Date: February 17, 2014
- 44 - Revision G
10.2 8-Pad USON 2x3-mm (Package Code UX)
SYMBOL
MILLIMETER
INCHES
MIN
TYP.
MAX
MIN
TYP.
MAX
A
0.50
0.55
0.60
0.020
0.022
0.024
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.20
0.25
0.30
0.008
0.010
0.012
C
―
0.15 REF
―
―
0.006 REF
―
D
1.90
2.00
2.10
0.075
0.079
0.083
D2
1.55
1.60
1.65
0.061
0.063
0.065
E
2.90
3.00
3.10
0.114
0.118
0.122
E2
0.15
0.20
0.25
0.006
0.008
0.010
e
―
0.50
―
―
0.020
―
L
0.40
0.45
0.50
0.016
0.018
0.020
L1
―
0.10
―
―
0.004
―
L3
0.30
0.35
0.40
0.012
0.014
0.016
y
0.00
―
0.075
0.000
―
0.003
W25X10CL
Publication Release Date: February 17, 2014
- 45 - Revision G
11. ORDERING INFORMATION(1)
Notes:
1a. Standard bulk shipments are in Tube (shape E). Please specify alternate packing method, such as Tape and Reel
(shape T) or Tray (shape S), when placing orders.
1b. The “W” prefix is not included on the part marking.
W 25X xxC L xx(2)
W = Winbond
25X = SpiFlash Serial Flash Memory with 4KB sectors, Dual SPI
10C = 1M-bit
L = 2.3V to 3.6V
SN = 8-pin SOIC 150-mil UX = 8-pad USON 2x3-mm
I = Industrial (-40°C to +85°C)
G = Green Package (Lead-free, RoHS Compliant, Halogen-free (TBBA), Antimony-Oxide-free Sb2O3)
W25X10CL
Publication Release Date: February 17, 2014
- 46 - Revision G
11.1 Valid Part Numbers and Top Side Marking
The following table provides the valid part numbers for the W25X10CL SpiFlash Memories. Please
contact Winbond for specific availability by density and package type. Winbond SpiFlash memories
use a 12-digit Product Number for ordering. However, due to limited space, the Top Side Marking on
all packages uses an abbreviated number less than 10-digit.
PACKAGE TYPE
DENSITY
PRODUCT NUMBER
TOP SIDE MARKING
SN
SOIC-8 150-mil
1M-bit
W25X10CLSNIG
25X10CLNIG
UX(1)
USON-8 2X3mm
1M-bit
W25X10CLUXIG
1Hxxx
0Gxxxx
Notes:
1. USON package type UX has special top marking due to size limitation.
1 = 1Mb, H = W25X C series; 2.5V; 0 = Standard parts, G = Green
W25X10CL
Publication Release Date: February 17, 2014
- 47 - Revision G
12. REVISION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
A
2012/08/06
All
New Create
B
2012/08/28
P.46
Update WSON package specification
C
2012/10/16
P.44
Update VSOP package specification
D
2012/11/13
All
Remove WSON package specification
E
2012/11/28
P.46
Update USON package specification
F
2013/10/28
5-6,46-47
Removed VSOP & TSSOP package specification
G
2014/02/17
44
Update USON package specification
Trademarks
Winbond and SpiFlash are trademarks of Winbond Electronics Corporation.
All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in
systems or equipment intended for surgical implantation, atomic energy control instruments, airplane
or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, or for other applications intended to support or sustain life. Further more, Winbond
products are not intended for applications wherein failure of Winbond products could result or lead to a
situation wherein personal injury, death or severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their own risk
and agree to fully indemnify Winbond for any damages resulting from such improper use or sales.
Information in this document is provided solely in connection with Winbond products. Winbond
reserves the right to make changes, corrections, modifications or improvements to this document and
the products and services described herein at any time, without notice.
