BCX42, BSS63
1 Jul-10-2001
PNP Silicon AF an Swiching Transistors
For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BCX41, BSS64 (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BCX42
BSS63 DKs
BMs 1 = B
1 = B 2 = E
2 = E 3 = C
3 = C SOT23
SOT23
Maximum Ratings
Parameter Symbol BSS63 BCX42 Unit
Collector-emitter voltage VCEO 100 125 V
Collector-base voltage VCBO 110 125
Emitter-base voltage VEBO 5 5
DC collector current IC800 mA
APeak collector current 1
ICM
Base current IB100 mA
Peak base current IBM 200
Total power dissipation, TS = 79 °C mW330
Ptot
Tj°CJunction temperature 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
215 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCX42, BSS63
2 Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BSS63
BCX42
V(BR)CEO
100
125
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BSS63
BCX42
V(BR)CBO
110
125
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 80 V, IE = 0
VCB = 100 V, IE = 0
BSS63
BCX42
ICBO
-
-
-
-
100
100
nA
Collector cutoff current
VCB = 80 V, IE = 0 , TA = 150 °C
VCB = 100 V, IE = 0 , TA = 150 °C
BSS63
BCX42
ICBO
-
-
-
-
20
20
µA
Emitter cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
Collector cutoff current
VCE = 100 V, TA = 85 °C
VCE = 100 V, TA = 125 °C
BCX42
BCX42
ICEO
-
-
-
-
10
75
µA
DC current gain 1)
IC = 100 µA, VCE = 1 V
IC = 10 mA, VCE = 5 V
IC = 20 mA, VCE = 5 V
IC = 100 mA, VCE = 1 V
IC = 200 mA, VCE = 1 V
BCX42
BSS63
BSS63
BCX42
BCX42
hFE
25
30
30
63
40
-
-
-
-
-
-
-
-
-
-
-
1) Pulse test: t ≤ 300µs, D = 2%
BCX42, BSS63
3 Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
IC = 25 mA, IB = 2.5 mA
IC = 75 mA, IB = 7.5 mA
BCX42
BSS63
BSS63
VCEsat
-
-
-
-
-
-
0.9
0.25
0.9
V
Base-emitter saturation voltage 1)
IC = 300 mA, IB = 30 mA
BCX42 VBEsat - - 1.4
AC Characteristics MHz
-- 150
fT
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
pFCollector-base capacitance
VCB = 10 V, f = 1 MHz - 12
Ccb -
BCX42, BSS63
4 Jul-10-2001
Collector current IC = f (VBE)
VCE = 1V
10 013
BCX 42/BSS 63 EHP00429
VBE
10
mA
10
10
10
3
2
1
0
-1
5
5
5
V
25
150
-50
2
TA=
C
Ι
˚C
˚C
˚C
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00430BCX 42/BSS 63
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
P
DC
P
p
t
Transition frequency fT = f (IC)
VCE = 5V
10 10 10 10
BCX 42/BSS 63 EHP00431
f
mA
MHz
0123
5
T
3
10
10
2
1
10
5
5
5
C
Ι
BCX42, BSS63
5 Jul-10-2001
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0 400 800
BCX 42/BSS 63 EHP00433
V
CE sat
mV
mA
10
3
0
10
10
10
1
10
10
2
10
5
5
5
10 200 600
150
25
-50
-1
C
Ι
˚C
˚C
˚C
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 013
BCX 42/BSS 63 EHP00432
V
BE sat
10
mA
10
10
10
3
2
1
0
-1
5
5
5
V
25
150
-50
2
C
Ι
˚C
˚C
˚C
Collector cutoff current ICBO = f (TA)
VCB = 100V
10 0 50 100 150
BCX 42/BSS 63 EHP00434
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
˚C
DC current gain hFE = f (IC)
VCE = 1V
10 10 10 10
BCX 42/BSS 63 EHP00435
h
mA
-1 0 2 3
FE
3
10
10
2
1
10
5
5
1
10
150
25
-50
555
C
Ι
˚C
˚C
˚C
