MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE FK10VS-10 OUTLINE DRAWING Dimensions in mm an je 20.SMAX. 45, * ive) 08 afte OS ome eR Yr o.2 3 a} 3 2 24 wl | 1 GATE i 2. DRAIN @VDSS cree tect ec eee nen cee eee teeter e eee n eens 500V - % SOURCE 4. DRAIN @rps (ON) (MAX) i er 4 130 y t -+ WD cree cee renee ete e renee ence eet rest eee etnee 10A O3 Integrated Fast Recovery Diode (MAX.) ---+ 150ns 10-2208 APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS (tc = 25C) Symbot Parameter Conditions Ratings Unit Vpbss Drain-source voitage Vas = 0V 500 Vv Vass Gate-source voltage Vos = OV +30 Vv ID Drain current : 10 A lom Drain current (Pulsed) 30 A 8 Source current 10 A sm Source current (Pulsed) 30 A Po Maximum power dissipation 125 Ww Tch Channel temperature 55 ~ +150 C Tstg Storage temperature 55 ~ +150 C = Weight Typical value 1.2 g MITSUBISHI 3 - 187 ELECTRICMITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Limit Symbot Parameter Test conditions - a Unit Min. Typ. Max. V (BR) DSS | Drain-source breakdown voltage | ID = 1mA, VGS = OV 500 _ _ Vv V (8R) GSS | Gate-source breakdown voltage | IG = +100uA, VDS = OV +30 ~ Vv lass Gate leakage current V@s = +25V, Vps = 0V _ _ 10 LA IDSs Drain current Vps = 500V, Vas = 0V _ 1 mA VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 v TDS (ON) Drain-source on-state resistance | 10 = 5A, Vas = 10V 0.88 13 Q VDS (ON) | Drain-source on-state voltage | 10 = 5A, VGs = 10V 4.40 5 Vv I yts | Forward transfer admittance | ID = 5A, Vos = 10V 3.3 5.5 S Ciss input capacitance _ 1100 _ pF Coss Output capacitance Vos = 25V, Vas = OV, f= 1MHz ~ 130 _ pF Cras Reverse transfer capacitance ~ 20 _ pF td (on) Turn-on delay time 20 ns Rise ti _ _ tr Se time _ Vbo = 200V, Io = 5A, Vas = 10V, RGEN = Ras = 5002 30 ns te (off) Turn-off delay time _ 95 _ ns tt Fall time _ 35 _ ns VsD Source-drain voltage IS = 5A, VGS = OV _ 1.5 2.0 Vv Ath (ch-c) | Thermal resistance Channel to case _ ~ 1.0 CW tre Reverse recovery time Is = 10A, dis/dt = -100A/us _ _ 150 ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 5 3 = 2 tw=10us o 160 = io o 2 7 100us Zz 5 S 420 5 3 ke wey 2 < cc o. x a 5 100 7) 380 oO 7 10ms a z 5 ioe < Wu 3 = 40 & 2b tte = 26c o Si Pulse a 10-1 7 5 50 100 150 200 368 23 5710! 23 57102 23 57108 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) 3 - 158 MITSUBISHI ELECTRICDRAIN CURRENT {0 (A) DRAIN-SOURCE ON-STATE VOLTAGE Vs (ON) (V) DRAIN CURRENT {pb (A) MITSUBISH! Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL} (TYPICAL) VGS = 20V VGS = 20V 10V 6V 20 : 1 ov 8 N Po = 125W < 2 Te = 25C E Pulse Test a BV c oc 6 To = 28C oY Zz Pulse Test Po= 125W a c 10 20 30.40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) 2.0 tls To = 25C Te = 25C Pulse Test a Pulse T be in = 208 ze 18 wo Zz 3 O68 12 Os ZO Bz 08 10A 2b = op) 5A Se 04 9 0 4 8 12 16 20 10-7 23 5710023 5710 23 57102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 20 10? ent Te = 25C DS = VBS = 50V 7T pulse Test Te225C 16 Pulse Test a @ 5 lu = Ws 3 wo S 2 2 z= ag tat 7? 8 SE 5 52 4 22 Nw 0 10-1 0 4 8 12 16 20 107 23 57108 23 5 7 10! GATE-SOURCE VOLTAGE VGs (V) DRAIN CURRENT {0 (A) MITSUBISHI 3 + 159 ELECTRICCAPACITANCE Ciss, Coss, Crss (pF) DRAIN-SOURCE ON-STATE RESISTANCE rds (On) (tC) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE ON-STATE RESISTANCE. rps (an) (25C) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Ciss 103 2? camel 3 Ww 2 2 ia 102 7 g 5 =z 3 Ee 2 s ch = 26C ? iL Toh = 10" = MHz 5 =0V 23 5710023 5710123 5710223 DRAIN-SOURCE VOLTAGE Vos (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 Toh = 25C iD= 10A _ 16 <= = 100V 2 ke 42 a ir iv 3 8 Ww Oo f 5 4 QO H 0 9 20 40 60 B0 100 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V Ip = 1/21D a 8 Pulse Test 5 ~ . os 3 ze us 2 = = 8 es 1o Wu Ow 7 EO < 6 Or 23 3 Ws. < 2 S 10-1 9 50 700 180 200 250 CHANNEL TEMPERATURE Tch (C) MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE SWITCHING CHARACTERISTICS (TYPICAL) = oO @ Teh = 25C VDO = 200V VGS = 10V RGEN = RGS = 500 cn st tt c tdior} 10' io? 23 67108 23 456 7101 DRAIN CURRENT {0 (A) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGs = 0V Pulse Test 0 08 16 24 3.2 4.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VbS = 10V ID=1mA -50 0 50 100 150 CHANNEL TEMPERATURE = Tch (C) 3 - 160 9 MITSUBISHI ELECTRICDRAIN-SOURCE BREAKDOWN VOLTAGE V (er) 08s (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8A) 088 (25C) trr (us) REVERSE RECOVERY TIME BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = OV i= TMA 04 ~50 0 50 100 150 CHANNEL TEMPERATURE Tech (C) 10! Qo oe mmm Toh = 25 m= Teh = 150C 10) 230667108 23 5 7108 DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 z Is = 10A z 3 GS = OV 307 Voo = 2 5 2 J 2 Fa ? e 102 10% a 7 7 5 5 & S 3 3 Q 2 2 iy ing Ly a ea ui > iy cc ast 7 5 SOURCE CURRENT dis/dt (A/us) MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 108 102 G [dvd = 100Ans ; 3 & Vs = OV = Vb = 250V 5 Ww) wo 3 3 - 2 2 > x Y 102 10! wo 5 5 oH 3 3 Hh 2 w Ton = 25C | fu === Teh = 150C 101 109 10 23065710 2 3 ~ 7 102 SOURCE CURRENT Is (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS = 2 KO C43 mut No mS Nw Gist TRANSIENT THERMAL IMPEDANCE 2th (ch-c) (C/W) o T PULSE WIDTH tw (s} Inv (A) REVERSE RECOVERY CURRENT 10-423 5710323 5710223 5719123 5710923 5710'23 57104 MITSUBISHI ELECTRIC 3 - 161