SPW32N50C3 Cool MOSTM Power Transistor Feature VDS @ Tjmax 560 V RDS(on) 0.11 ID 32 A * New revolutionary high voltage technology * Ultra low gate charge PG-TO247 * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance Type SPW32N50C3 Package PG-TO247 Ordering Code Q67040-S4613 Marking 32N50C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value A TC = 25 C 32 TC = 100 C 20 Pulsed drain current, tp limited by Tjmax I D puls Avalanche energy, single pulse EAS Unit 96 1100 mJ I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1 I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 20 A 20 V Gate source voltage AC (f >1Hz) VGS 30 Power dissipation, T C = 25C Ptot 284 W Operating and storage temperature T j , T stg -55... +150 C Reverse diode dv/dt dv/dt Rev. 2.5 4) Page 1 15 V/ns 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW32N50C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 400 V, ID = 32 A, Tj = 125 C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 0.44 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, wavesoldering Tsold - - 260 K/W C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=1800, VGS=VDS Zero gate voltage drain current I DSS V DS=500V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.5 RG A Tj=25C, - 0.5 25 Tj=150C - - 250 V GS=20V, VDS=0V - - 100 V GS=10V, ID=20A, Tj=25C - 0.09 0.11 Tj=150C - 0.27 - f=1MHz, open Drain - 0.8 - Page 2 nA 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW32N50C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS2*I D*RDS(on)max, Values Unit min. typ. max. - 30 - S pF ID=20A Input capacitance Ciss V GS=0V, V DS=25V, - 4200 - Output capacitance Coss f=1MHz - 1700 - Reverse transfer capacitance Crss - 90 - - 181 - - 350 - Effective output capacitance, 2) Co(er) V GS=0V, energy related V DS=0V to 400V Effective output capacitance, 3) Co(tr) pF time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 20 - Rise time tr ID=32A, RG=2.7 - 30 - Turn-off delay time td(off) - 100 - Fall time tf - 10 - - 15 - - 90 - - 170 - - 5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=380V, ID=32A VDD=380V, ID=32A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=380V, ID=32A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 4I <=I , di/dt<=200A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.5 Page 3 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW32N50C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Inverse diode continuous IS Conditions TC=25C Values Unit min. typ. max. - - 32 - - 96 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=380V, IF=IS , - 500 - ns Reverse recovery charge Qrr diF/dt=100A/s - 15 - C Peak reverse recovery current Irrm - 60 - A Peak rate of fall of reverse dirr /dt - 1000 - A/s recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.004367 R th2 Cth1 0.0006644 0.008742 Cth2 0.002479 R th3 0.017 Cth3 0.00336 R th4 0.081 Cth4 0.009048 R th5 0.103 Cth5 0.017 R th6 0.049 Cth6 0.114 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.5 Page 4 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW32N50C3 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25C 320 10 2 SPW32N50C3 A W 10 1 ID Ptot 240 200 10 0 160 120 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 80 40 0 0 20 40 60 80 100 120 C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25C parameter: D = tp/T parameter: tp = 10 s, VGS 0 10 3 140 K/W Vgs = 20V A 10 -1 Vgs = 7V ID ZthJC 100 Vgs = 6V 80 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 60 Vgs = 5.5V 40 Vgs = 5V 20 Vgs = 4.5V 10 -4 10 Rev. 2.5 -7 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 5 10 15 V 25 VDS Page 5 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW32N50C3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150C RDS(on)=f(ID) parameter: tp = 10 s, VGS parameter: Tj=150C, V GS 80 2 Vgs = 20V Vgs = 6V 1.6 RDS(on) A ID Vgs = 5.5V Vgs = 4.5VVgs = 5V 1.4 1.2 Vgs = 5V 40 Vgs = 5.5V Vgs = 4V 1 0.8 0.6 Vgs = 4.5V 20 0.4 Vgs = 4V 0 0 5 10 V 15 Vgs = 20 0.2 0 0 25 10 20 30 40 50 ID ID 60 VDS 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter : ID = 20 A, VGS = 10 V parameter: tp = 10 s 0.65 SPW32N50C3 80 160 A 0.55 120 Tj = 25C 0.45 ID RDS(on) 0.5 0.4 100 0.35 Tj =150C 80 0.3 0.25 60 0.2 0.15 40 98% 0.1 typ 20 0.05 0 -60 -20 20 60 100 C 180 Tj Rev. 2.5 Page 6 0 0 1 2 3 4 5 6 7 8 V 10 VGS 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW32N50C3 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 32 A pulsed parameter: Tj , tp = 10 s 16 10 2 SPW32N50C3 V SPW32N50C3 A 10 10 1 0.2 VDS max IF VGS 12 0.8 VDS max 8 6 10 0 Tj = 25 C typ 4 Tj = 150 C typ Tj = 25 C (98%) 2 0 0 Tj = 150 C (98%) 40 80 120 200 nC 160 10 -1 0 260 0.4 0.8 1.2 1.6 2 QGate 2.4 V 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj 150 C par.: ID = 10 A, VDD = 50 V 20 1.2 mJ EAS IAR A Tj(START)=25C 10 0.8 0.6 0.4 Tj(START)=125C 5 0.2 0 -3 10 Rev. 2.5 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR 4 Page 7 0 20 40 60 80 100 120 160 C Tj 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW32N50C3 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=1mJ 600 SPW32N50C3 1000 V 560 PAR V(BR)DSS W 570 550 540 600 530 520 400 510 500 490 200 480 470 460 450 -60 -20 20 60 100 C 0 4 10 180 10 5 Hz Tj 10 6 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 5 22 pF J 10 4 18 16 Eoss C Ciss 10 3 14 12 Coss 10 10 2 8 6 Crss 10 1 10 0 4 2 0 100 200 300 V 500 100 200 300 V 500 VDS VDS Rev. 2.5 0 0 Page 8 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A SPW32N50C3 Definition of diodes switching characteristics Rev. 2.5 Page 9 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A 63:31& 3G72 Rev. 2.5 PDJH 80211 Please note the new package dimensions arccording to PCN 2009-134-A 63:31& Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.5 Page 11 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A Data sheet erratum PCN 2009-134-A New package outlines TO-247 1 New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Rev. 2.0, 2010-02-01