2008-02-11Rev. 2.5 Page 1
SPW32N50C3
Cool MOS™ Power Transistor VDS @ Tjmax 560 V
RDS(on) 0.11 Ω
ID32 A
Feature
• New revolutionary high voltage technology
•Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
• Ultra low effective capacitances
• Improved transconductance
PG-TO247
Type Package Ordering Code
SPW32N50C3 PG-TO247 Q67040-S4613
Marking
32N50C3
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
32
20
A
Pulsed drain current, t
p
limited by T
j
max ID
p
uls 96
Avalanche energy, single pulse
ID = 10 A, VDD = 50 V
EAS 1100 mJ
Avalanche energy, repetitive tAR limited by Tjmax1
)
ID = 20 A, VDD = 50 V
EAR 1
Avalanche current, repetitive t
AR
limited by T
j
max I
AR
20 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 284 W
Operating and storage temperature T
j
,Tst
g
-55... +150 °C
Reverse diode dv/dt
dv/dt
15
V/ns
4)
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.5 Page 2 2008-02-11
SPW32N50C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 400 V, ID = 32 A, Tj = 125 °C
dv/dt50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.44 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Tsold - - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=20A - 600 -
Gate threshold voltage VGS
(
th
)
ID=1800µΑ,VGS=VD
2.1 3 3.9
Zero gate voltage drain current IDSS VDS=500V, VGS=0V,
Tj=25°C,
Tj=150°C
-
-
0.5
-
25
250
µA
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=20A,
Tj=25°C
Tj=150°C
-
-
0.09
0.27
0.11
-
Ω
Gate input resistance RGf=1MHz, open Drain - 0.8 -
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.5 Page 3 2008-02-11
SPW32N50C3
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=20A
- 30 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 4200 - pF
Output capacitance Coss - 1700 -
Reverse transfer capacitance Crss - 90 -
Effective output capacitance,2)
energy related
Co(er) VGS=0V,
VDS=0V to 400V
- 181 - pF
Effective output capacitance,3)
time related
Co(tr) - 350 -
Turn-on delay time td(on) VDD=380V, VGS=0/10V,
ID=32A, RG=2.7Ω
- 20 - ns
Rise time tr- 30 -
Turn-off delay time td(off) - 100 -
Fall time tf- 10 -
Gate Charge Characteristics
Gate to source charge Qgs VDD=380V, ID=32A - 15 - nC
Gate to drain charge Qgd - 90 -
Gate charge total QgVDD=380V, ID=32A,
VGS=0 to 10V
- 170 -
Gate plateau voltage V(plateau) VDD=380V, ID=32A - 5 - V
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
4ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.5 Page 4 2008-02-11
SPW32N50C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
ISTC=25°C - - 32 A
Inverse diode direct current,
pulsed
ISM - - 96
Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V
Reverse recovery time trr VR=380V, IF=IS ,
diF/dt=100A/µs
- 500 - ns
Reverse recovery charge Qrr - 15 - µC
Peak reverse recovery current Irrm - 60 - A
Peak rate of fall of reverse
recovery current
dirr/dt - 1000 - A/µs
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Rth1 0.004367 K/W
Rth2 0.008742
Rth3 0.017
Rth4 0.081
Rth5 0.103
Rth6 0.049
Thermal capacitance
Cth1 0.0006644 Ws/K
Cth2 0.002479
Cth3 0.00336
Cth4 0.009048
Cth5 0.017
Cth6 0.114
External Heatsink
TjTcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.5 Page 5 2008-02-11
SPW32N50C3
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
40
80
120
160
200
240
W
320 SPW32N50C3
Ptot
2 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC=25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
ZthJC = f(tp)
parameter: D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 10 µs, VGS
0 5 10 15 V25
VDS
0
20
40
60
80
100
A
140
ID
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 7V
Vgs = 20V
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.5 Page 6 2008-02-11
SPW32N50C3
5 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp= 10 µs, VGS
0 5 10 15 V25
VDS
0
20
40
A
80
ID
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 20V
6 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0 10 20 30 40 50 60 ID80
ID
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Ω
2
RDS(on)
Vgs = 4V Vgs = 5.5V
Vgs = 4.5VVgs = 5V
Vgs = 2
0
7 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 20 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
Ω
0.65 SPW32N50C3
RDS(on)
typ
98%
8 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 1 2 3 4 5 6 7 8 V10
VGS
0
20
40
60
80
100
120
A
160
ID
Tj = 25°C
Tj =150°C
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.5 Page 7 2008-02-11
SPW32N50C3
9 Typ. gate charge
VGS =f (QGate)
parameter: ID = 32 A pulsed
0 40 80 120 160 200 nC 260
QGate
0
2
4
6
8
10
12
V
16 SPW32N50C3
VGS
0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD)
parameter: T
j
, tp= 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
SPW32N50C3
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR)
par.: Tj≤ 150 °C
10 -3 10 -2 10 -1 10 010 110 210 4
µs
tAR
0
5
10
A
20
IAR
Tj(START)=25°C
Tj(START)=125°C
12 Avalanche energy
EAS = f(Tj)
par.: ID = 10 A, VDD = 50 V
20 40 60 80 100 120 °C 160
Tj
0
0.2
0.4
0.6
0.8
mJ
1.2
EAS
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.5 Page 8 2008-02-11
SPW32N50C3
13 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
450
460
470
480
490
500
510
520
530
540
550
560
570
V
600
SPW32N50C3
V(BR)DSS
14 Avalanche power losses
PAR = f (f )
parameter: EAR=1mJ
10 410 510 6
Hz
f
0
200
400
600
W
1000
PAR
15 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 100 200 300 V500
VDS
0
10
1
10
2
10
3
10
4
10
5
10
pF
C
Ciss
Crss
Coss
16 Typ. Coss stored energy
Eoss=f(VDS)
0 100 200 300 V 500
VDS
0
2
4
6
8
10
12
14
16
18
µJ
22
Eoss
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.5 Page 9 2008-02-11
SPW32N50C3
Definition of diodes switching characteristics
Please note the new package dimensions arccording to PCN 2009-134-A
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Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.5 Page 11 2008-02-11
63:31&
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© 2008 Infineon Technologies AG
All Rights Reserved.
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assume that the health of the user or other persons may be endangered.
Please note the new package dimensions arccording to PCN 2009-134-A
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
Final Data Sheet Erratum Rev. 2.0, 2010-02-01
1New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1 Outlines TO-247, dimensions in mm/inches