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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SB1409(L)/(S) Silicon PNP Epitaxial ADE-208-877 (Z) 1st. Edition September 2000 Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -180 V Collector to emitter voltage VCEO -160 V Emitter to base voltage VEBO -5 V Collector current IC -1.5 A Collector peak current I C(peak) -3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -180 -- -- V I C = -1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage -160 -- -- V I C = -10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO -5 -- -- V I E = -1 mA, IC = 0 Collector cutoff current I CBO -- -- -10 A VCB = -160 V, IE = 0 60 -- 200 VCE = -5 V, IC = -150 mA*2 hFE2 30 -- -- VCE = -5 V, IC = -500 mA*2 Collector to emitter saturation voltage VCE(sat) -- -- -1 V I C = -500 mA, IB = -50 mA Base to emitter voltage VBE -- -- -1.5 V VCE = -5 V, IC = -150 mA Gain bandwidth product fT -- 240 -- MHz VCE = -5 V, IC = -150 mA Collector output capacitance Cob -- 25 -- pF VCB = -10 A, IE = 0, f = 1 MHz DC current transfer ratio hFE1* 1 Notes: 1. The 2SB1409(L)/(S) is grouped by h FE1 as follows. B C 60 to 120 100 to 200 2. Pulse test. 2 2SB1409(L)/(S) Maximum Collector Dissipation Curve Area of Safe Operation 20 -1.0 PW = IC (max) -0.3 s 1m -0.1 on a ti (T C = -0.03 Ta = 25C 1 Shot Pulse -0.01 -3 -10 -30 -100 -300 Collector to emitter Voltage VCE (V) ) C 25 50 100 Case Temperature TC (C) 0 150 DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics -0.8 -0.6 1,000 PC = 18 W -5 5 -4. -4 -3.5 -3 -2.5 DC current transfer ratio hFE -1.0 Collector Current IC (A) 10 ms iC (peak) er 10 -3 Op Collector Current IC (A) -10 DC Collector power dissipation Pc (W) 30 -2 -0.4 -1.5 -1 mA -0.2 IB = 0 0 TC = 25C -10 -20 -30 -40 -50 Collector to emitter Voltage VCE (V) 300 100 30 10 -0.01 VCE = -5 V Ta = 25C -0.03 -0.1 -0.3 Collector current IC (A) -1.0 3 2SB1409(L)/(S) Saturation Voltage vs. Collector Current -10 -1.0 -0.1 -0.01 -0.001 lC = 10 lB Ta = 25C -0.01 -0.1 Collector current IC (A) Base to emitter saturation voltage VBE (sat) (V) Collector to emitter saturation voltage VCE (sat) (V) Saturation Voltage vs. Collector Current -10 -3 -1.0 -0.3 -0.1 -0.03 -1.0 -3.0 1,000 -1.6 -1.2 -0.8 -0.4 VCE = -5 V Ta = 25C 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Base to emitter voltage VBE (V) Gain bandwidth product fT (MHz) -2.0 Collector current IC (A) -0.1 -0.3 -1.0 Collector current IC (A) Gain Bandwidth Product vs. Collector Current Typical Transfer Characteristics 4 lC = 10 lB Ta = 25C 300 100 30 10 -0.01 VCE = -5 V Ta = 25C -0.03 -0.1 -0.3 Collector current IC (A) -1.0 2SB1409(L)/(S) Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 300 100 30 10 f = 1 MHz IE = 0 Ta = 25C 3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) 5 2SB1409(L)/(S) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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