May. 2011. Version 1.2 MagnaChip Semiconductor Ltd.
2
MDU1514 – Single N-Channel Trench MOSFET 30V
Part Number Temp. Range Package Packing Quantity Rohs Status
MDU1514URH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free
Electrical Characteristics (T
J
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7
Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1
µA
TJ=55oC - - 5
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON)
VGS = 10V, ID = 18A - 5.2 6.0
mΩ TJ=125oC
- 7.5 8.7
VGS = 4.5V, ID = 14A - 7.5 9.0
Forward Transconductance gfs VDS = 5V, ID = 10A - 33 - S
Dynamic Characteristics
Total Gate Charge Qg(10V)
VDS = 15.0V, ID = 18A,
VGS = 10V
14.3
19 23.8
nC
Total Gate Charge Qg(4.5V) 6.6 8.8 11.0
Gate-Source Charge Qgs - 3 -
Gate-Drain Charge Qgd - 2.8 -
Input Capacitance Ciss
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
913 1217 1521
pF
Reverse Transfer Capacitance Crss 89 119 149
Output Capacitance Coss 186 248 310
Turn-On Delay Time td(on)
VGS = 10V, VDS = 15.0V,
ID = 18A , RG = 3.0Ω
- 7.9 -
ns
Rise Time tr - 11.5 -
Turn-Off Delay Time td(off) - 27.0 -
Fall Time tf - 8.3 -
Gate Resistance Rg f=1 MHz 1.0 2.0 2.8 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 18A, VGS = 0V - 0.8 1.1 V
Body Diode Reverse Recovery Time trr IF = 18A, dl/dt = 100A/µs - 24.5 36.8 ns
Body Diode Reverse Recovery Charge Qrr - 16.7 25.1 nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 22A, VDD = 27V, VGS = 10V.
3. T < 10sec.