BAS19-T - NXP - Datasheet.Live

DATA SH EET

Product data sheet

Supersedes data of 1999 May 26 2003 Mar 20

DISCRETE SEMICONDUCTORS

BAS19; BAS20; BAS21

General purpose diodes

ook, halfpage

M3D088

2003 Mar 20 2

NXP Semiconductors Product data sheet

General purpose diodes BAS19; BAS20; BAS21

FEATURES

•Small plastic SMD package

•Switching speed: max. 50 ns

•General application

•Continuous reverse voltage: max. 100 V; 150 V; 200 V

•Repetitive peak reverse voltage: max. 120 V; 200 V;

250 V

•Repetitive peak forward current: max. 625 mA.

APPLICATIONS

•General purpose s witc hing in e.g. surface mounte d

circuits.

DESCRIPTION

The BAS19, BAS20 and BAS21 are general purpose

diodes fabricated in planar technology, and encapsulated

in a small SOT23 plastic SMD package.

MARKING

Note

1. ∗ = p: Made in Hong Kong.

∗ = t: Made in Malaysia.

∗ = W: Made in China.

PINNING

TYPE NUMBER MARKING CODE (1)

BAS19 JP∗

BAS20 JR∗

BAS21 JS∗

PIN DESCRIPTION

1anode

2not connected

3cathode

handbook, halfpage

3MAM185

n.c. 1

Fig.1 Simplified outline (SOT23 ) and symbo l .

2003 Mar 20 3

NXP Semiconductors Pr oduct dat a shee t

General purpose diodes BAS19; BAS20; BAS21

LIMITING VALUES

In accordance with the Absolute Maximum Ratin g S ystem (IEC 60134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRRM repetitive peak reverse voltage

BAS19 −120 V

BAS20 −200 V

BAS21 −250 V

VRcontinuous revers e voltage

BAS19 −100 V

BAS20 −150 V

BAS21 −200 V

IFcontinuous forward current see Fig.2; note 1 −200 mA

IFRM repetitive peak forward current −625 mA

IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs−9 A

t = 100 µs−3 A

t = 10 ms −1.7 A

Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

2003 Mar 20 4

NXP Semiconductors Pr oduct dat a shee t

General purpose diodes BAS19; BAS20; BAS21

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTE RISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage see Fig.3

IF = 100 mA 1 V

IF = 200 mA 1.25 V

IRreverse current see Fig.5

BAS19 VR = 100 V 100 nA

VR = 100 V; Tj = 150 °C100 µA

BAS20 VR = 150 V 100 nA

VR = 150 V; Tj = 150 °C100 µA

BAS21 VR = 200 V 100 nA

VR = 200 V; Tj = 150 °C100 µA

Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 5pF

trr reverse recove ry time when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω; measured at

IR = 3 mA; see Fig.8

50 ns

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point 330 K/W

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

2003 Mar 20 5

NXP Semiconductors Pr oduct dat a shee t

General purpose diodes BAS19; BAS20; BAS21

GRAPHICAL DATA

Device mounted on an FR4 printed-circuit board.

Fig.2 Maximum permissible continuou s forward

current as a func tion of ambient

temperature.

handbook, halfpage

0 100 200

300

200

100

MBG442

Tamb (oC)

(mA)

(1) Tj = 150 °C; typical values.

(2) Tj = 25 °C; typical values.

(3) Tj = 25 °C; maximum values.

Fig.3 Forward current as a function of forward

voltage.

handbook, halfpage

600

(mA)

200

400

MBG384

1VF (V)

(1) (3)(2)

handbook, full pagewidth

MBG703

10 tp (µs)

IFSM

(A)

102

10−1104

102103

Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of puls e duration.

Based on square wave currents.

Tj = 25 °C prior to surge.

2003 Mar 20 6

NXP Semiconductors Pr oduct dat a shee t

General purpose diodes BAS19; BAS20; BAS21

Fig.5 Reverse current as a function of junc tion

temperature.

handbook, halfpage

200

MBG381

100 Tj (

(µA)

(1) (2)

(1) VR = VRmax; maximum values.

(2) VR = VRmax; typical values.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj = 25 °C.

handbook, halfpage

04862

1.0

0.8

0.2

0.6

0.4

MBG447

VR (V)

(pF)

Fig.7 Maximum permissible continuous reverse

voltage as a functio n of the ambient

temperature.

(1) BAS21.

(2) BAS20.

(3) BAS19.

handbook, halfpage

0 100 200

300

200

100

MBG445

Tamb (oC)

(V)

(1)

(2)

(3)

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NXP Semiconductors Pr oduct dat a shee t

General purpose diodes BAS19; BAS20; BAS21

handbook, full pagewidth

trr

(1)

IFt

output signal

trt

10%

90%

input signal

V = V I x R

RF S

R = 50

SΩIF

D.U.T.

R = 50

iΩ

SAMPLING

OSCILLOSCOPE

MGA881

(1) IR = 3 mA.

Fig.8 Reverse reco very voltage test circuit and waveforms.

2003 Mar 20 8

NXP Semiconductors Pr oduct dat a shee t

General purpose diodes BAS19; BAS20; BAS21

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT2

2003 Mar 20 9

NXP Semiconductors Pr oduct dat a shee t

General purpose diodes BAS19; BAS20; BAS21

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this do cument may have ch anged since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificat ion .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

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made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/04/pp10 Date of release: 2003 Mar 20 Document order number: 9397 750 10961