DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2 1 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMN26D0UFB4
N-CHANNEL ENHAN CEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) ID
TA = 25°C
20V 3.0Ω @ VGS = 4.5V 240mA
6.0Ω @ VGS = 1.8V 170mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
Features and Benefits
• N-Channel MOSFET
• Low On-Resistance:
• 3.0 Ω @ 4.5V
• 4.0 Ω @ 2.5V
• 6.0 Ω @ 1.8V
• 10 Ω @ 1.5V
• Very Low Gate Threshold Voltage, 1.05V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package, 0.4mm Maximum Package
Height
• ESD Protected Gate
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMN26D0UFB4-7 X2-DFN1006-3 3,000/Tape & Reel
DMN26D0UFB4-7B X2-DFN1006-3 10,000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
X2-DFN1006-3
Bottom View Equivalent Circuit To
p
View
Source
Body
Diode
Gate
Protection
Diode
Gate
Drai
n
DS
G
ESD PROTECTED
DMN26D0UFB4-7BDMN26D0UFB4-7
Top View
Dot Denotes Drain Side Top View
Bar Denotes Gate
and Source Side
M1 = Product Type Marking Code
M1 M1
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2 2 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMN26D0UFB4
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±10 V
Continuous Drain Current (Note 4) VGS = 4.5V Steady
State TA = 25°C
TA = 70°C ID 240
190 mA
Continuous Drain Current (Note 4) VGS = 1.8V Steady
State TA = 25°C
TA = 70°C ID 180
140 mA
Pulsed Drain Current - TP = 10µs IDM 805 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 4) @TA = 25°C PD 350 mW
Thermal Resistance, Junction to Ambient (Note 4) R
θ
JA 357 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current @ TC = 25°C IDSS ⎯ ⎯ 500 nA
VDS = 20V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±1
±100 μA
nA VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
0.45 ⎯ 1.05 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON)
⎯
⎯
⎯
⎯
1.8
2.5
3.4
4.7
3.0
4.0
6.0
10.0
Ω
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
Forward Transconductance |Yfs| 180 242 ⎯ mS VDS = 10V, ID = 0.1A
Source-Drain Diode Forward Voltage VSD 0.5 ⎯ 1.4 V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 14.1 ⎯ pF VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 2.9 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 1.6 ⎯ pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time td
(
on
)
⎯ 3.8 ⎯
ns VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
Rise Time t
r
⎯ 7.9 ⎯
Turn-Off Delay Time td
(
off
)
⎯ 13.4 ⎯
Fall Time tf ⎯ 15.2 ⎯
Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Short duration pulse test used to minimize self-heating effect.
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2 3 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMN26D0UFB4
0 0.5 1 1.5 2 2.5 3
Fig . 1 Typica l O ut put Character istic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8V
GS
V = 2.5V
GS
V = 1.5V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
V , GATE -SOURCE VOLTAGE (V)
GS
0
0.1
0.2
0.3
0.4
I, D
AIN
EN
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
DS
1
2
3
4
5
0.01 0.1 1
Fig. 3 Typical On-Resistance
vs . Dr ai n Cu rrent and G at e Volta ge
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESIST ANCE ( )
DS(ON)
Ω
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0.01 0.1 1
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs . Dr ai n Cu r re nt and Tem per ature
0
1
2
3
4
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig . 5 On- R esistance Varia tion wit h Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
V = 2.5V
I = 150mA
GS
D
V = 4.5V
I = 500mA
GS
D
Fig . 6 On- R esistance Varia tion wit h Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
, D
AIN-S
E
ON-RESISTANCE ( )
DSON
Ω
V = 4.5V
I = 500mA
GS
D
V = 2.5V
I = 150mA
GS
D
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2 4 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMN26D0UFB4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = 1mA
D
I = 250µA
D
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Fi g. 8 Dio de Forw ard Voltage vs . C ur r ent
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I, S
E
EN
(A)
S
T = 25°C
A
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOL TAGE (V)
DS
04 8121620
0
5
10
15
20
,
A
A
I
A
E (p
)
C
iss
C
rss
C
oss
f = 1MHz
0 2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-S OURCE VOLTAGE (V )
DS
0.1
10
100
1,000
10,000
I, LEAKA
E
EN
(nA)
DSS
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001
0.01
0.1
1
r(t),
ANSIEN
E
MAL
ESIS
AN
E
0.000001 0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00010.00001
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 278°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2 5 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMN26D0UFB4
Package Outline Dimensions
Suggested Pad Layout
X2-DFN1006-3
Dim Min Max Typ
A ⎯ 0.40 ⎯
A1 0 0.05 0.02
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
Dimensions Value (in mm)
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
Y 0.4
C 0.7
L2
A1
Eb2
L1L3
D
e
b1
A
Y
C
G1
G2
X
X
1
Z
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2 6 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMN26D0UFB4
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