SIEMENS CLX34 HiRel X-Band GaAs Power-MESFET HiFfel Discrete and Microwave Semiconductor @ For professional power amplifiers For frequencies from 500 MHz to 10 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 53 % Component Under Development, Package Modifications Foreseen ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking | Ordering Code Pin Configuration | Package 1 2 3 CLX34-00 (ql) - see below G S$ D | MWP-25 CLX34-05 (ql) tbc. CLX34-10 (ql) CLX34-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Gode: on request H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: on request (see order instructions for ordering example) Semiconductor Group 1of9 Draft D, Jul. 98SIEMENS CLX34 Maximum Ratings Parameter Symbol | Values Unit Drain-source voltage Vos 11 Vv Drain-gate voltage Voc 13 Vv Gate-source voltage Vos -6 Vv Drain current I, 2000 mA Gate forward current I, 10 mA Compression Level P, 15 atV,.<8V dB Operation Range 1 25 at V,.<7V 3.5 at V,,.<6V Compression Level P, 3.5 at V,.56V dB Operation Range 2 Compression Level P, tod. dB Operation Range 3 Junction temperature T, 175 C Storage temperature range Ta, - 65...4.175 ae Total power dissipation P. 5.4 W Soldering temperature T.., 230 C Thermal Resistance Junction-soldering point Riis <20 KAW Notes.: 1) Operation Range 1: 400 mA <1, < 800 mA 2) Operation Range 2:1, > 800 mA 4) AtT, =+ 40 C. For T, > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have ) ) 3) Operation Range 3:1, < 400 mA ) ) elapsed. Semiconductor Group 2o0f9 Draft D, Jul. 98SIEMENS CLX34 Electrical Characteristics (at T,=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current bes 900 1500 |2000 |mA Vis=2ViV.,=0V Gate threshold voltage Voth 1.2 2.2 3.2 Vv Vig= 3 V,1,=60mA Drain current at pinch-off, low V ,. ops - - 400 LA Vis = 3 V, V.,= 3.5 V Gate current at pinch-off, low V ,. loos - - 120 LA Vie= 3 V, V.g = 3.5 V Drain current at pinch-off, high V ,., apa s - - 3000 | UA Vig = 9.5 V,V,,=-3.5 V Gate current at pinch-off, high V ,. loos - - 1200 | pA Vis = 9-5 V,V,,=-3.5 V Transconductance g,, 660 780 - ms Vis =3 V,1,=600 mA Thermal resistance Runs - 16 - K/W Junction to soldering point Vig = 8 V, 1, = 600 mA, T, = +25C Semiconductor Group 3 of 9 Draft D, Jul. 981) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (P RFout Semiconductor Group ~ Prin) / Pao 4of9 SIEMENS CLX34 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Linear power gain G,, dB V,, = 8 V, |, = 600 mA, f = 2.3 GHz, P_=11dBm CLX34-00 13.5 14.5 CLX34-05 14.0 15.0 CLX34-10 14.0 15.0 Power output at 1dB gain compr. P as dBm Vis = 8 V, Ijaeon = 600 MA, f = 2.3 GHz CLX34-00 33.2 CLX34-05 34.0 CLX34-10 34.5 Output Power Po dBm Vos = 8 V, Ijaeun = 600 MA, f = 2.3 GHz, P= 21.0 dBm CLX34-00 32.7 33.2 CLX34-05 33.7 34.0 CLX34-10 34.2 34.5 Power added efficiency * PAE % Vos = 8 V, Ijnean = 600 MA, f = 2.3 GHz, P= 21.0dBm CLX34-00 42 47 CLX34-05 44 51 CLX34-10 46 53 Draft D, Jul. 98SIEMENS CLX34 Typical Common Source S-Parameters MAG [GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB] 0.6 0,900 -133 4,453 115 90,0200 32 0,836 175 0,55 23,5 0,8 0,906 -151 3,402 100 0,0224 30 0,840 172 0,63 21,8 1,0 0,911 -163 2,688 91 0,0247 29 0,844 169 0,70 20,4 1,2 0,914 -171 2,208 84 0,0260 28 0,847 167 0,77 19,3 1,4 0,916 -177 1,872 79 0,0276 27 0,851 164 0,83 18,3 f ISt1| 34.2 dBm) in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353 .htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group ++89 6362 4480 +4+89 6362 5568 martin. wimmers@siemens-scg.com Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 8ofg Draft D, Jul. 98SIEMENS CLX34 MWP-25 Package 0.6101 2 +H +0. NS L6to1)) IS Vin| 2 a) |} L_113 {EF-tor + | 2.540.2 t 0.6 +0.1 Semiconductor Group Published by Siemens Semiconductors, High Frequency Products Marketing, P.G.Box 801709, D-81617 Munich. Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and Q89000 manufacturer (this includes ISO 9000). 9of9 Draft D, Jul. 98