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The mark shows major revised points.
The
µ
PD75P0016 replaces the
µ
PD750008’s internal mask ROM with a one-time PROM and features expanded
ROM capacity.
Because the
µ
PD75P0016 supports programming by users, it is suitable for use in prototype testing for system
development using the
µ
PD750004, 750006, or 750008 products, and for use in small-lot production.
Detailed information about product features and specifications can be found in the following document
µ
PD750008 User's Manual: U10740E
FEATURES
Compatible with
µ
PD750008
Memory capacity:
• PROM : 16384 × 8 bits
• RAM : 512 × 4 bits
Can operate in same power supply voltage as the mask ROM version
µ
PD750008
• VDD = 2.2 to 5.5 V
Supports QTOP™ microcontroller
Remark QTOP Microcontroller is the general name for a total support service that includes imprinting, marking,
screening, and verifying one-time PROM single-chip microcontrollers offered by NEC Electronics.
ORDERING INFORMATION
Part number Package ROM (× 8 bits)
µ
PD75P0016CU 42-pin plastic shrink DIP (600 mil, 1.778-mm pitch) 16384
µ
PD75P0016CU-A 42-pin plastic shrink DIP (600 mil, 1.778-mm pitch) 16384
µ
PD75P0016GB-3BS-MTX 44-pin plastic QFP (10 × 10 mm, 0.8-mm pitch) 16384
µ
PD75P0016GB-3BS-MTX-A 44-pin plastic QFP (10 × 10 mm, 0.8-mm pitch) 16384
Caution On-chip pull-up resistors by mask option cannot be provided.
Remark Products with “-A” at the end of the part number are lead-free products.
µ
PD75P0016
MOS INTEGRATED CIRCUIT
4-BIT SINGLE-CHIP MICROCONTROLLER
Document No. U10328EJ3V3DS00 (3rd edition)
Date Published August 2005 N CP(K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
PD75P0016
2Data Sheet U10328EJ3V3DS
FUNCTION LIST
Item Function
Instruction execution time 0.95, 1.91, 3.81, 15.3
µ
s (main system clock: at 4.19 MHz operation)
0.67, 1.33, 2.67, 10.7
µ
s (main system clock: at 6.0 MHz operation)
122
µ
s (subsystem clock: at 32.768 kHz operation)
On-chip memory PROM 16384 × 8 bits
RAM 512 × 4 bits
General register In 4-bit operation: 8 × 4 banks
In 8-bit operation: 4 × 4 banks
I/O port CMOS input 8 Connection of on-chip pull-up resistor specifiable by software: 7
CMOS I/O 18 Direct LED drive capability
Connection of on-chip pull-up resistor specifiable by software: 18
N-ch open drain I/O 8 Direct LED drive capability
13 V withstand voltage
Total 34
Timer 4 channels
8-bit timer/event counter: 1 channel
8-bit timer counter: 1 channel
Basic interval timer/watchdog timer: 1 channel
Watch timer: 1 channel
Serial interface 3-wire serial I/O mode ... Switching of MSB/LSB-first
2-wire serial I/O mode
SBI mode
Bit sequential buffer (BSB) 16 bits
Clock output (PCL) Φ, 524, 262, 65.5 kHz (main system clock: at 4.19 MHz operation)
Φ, 750, 375, 93.8 kHz (main system clock: at 6.0 MHz operation)
Buzzer output (BUZ) 2, 4, 32 kHz (main system clock: at 4.19 MHz operation or subsystem clock:
at 32.768 kHz operation)
2.93, 5.86, 46.9 kHz (main system clock: at 6.0 MHz operation)
Vectored interrupt External: 3 Internal: 4
Test input External: 1 Internal: 1
System clock oscillation circuit Main system clock oscillation ceramic/crystal oscillation circuit
Subsystem clock oscillation crystal oscillation circuit
Standby function STOP/HALT mode
Operating ambient temperature TA = –40 to +85˚C
Supply voltage VDD = 2.2 to 5.5 V
Package 42-pin plastic shrink DIP (600 mil, 1.778-mm pitch)
44-pin plastic QFP (10 × 10 mm, 0.8-mm pitch)
µ
PD75P0016
3
Data Sheet U10328EJ3V3DS
TABLE OF CONTENTS
1. PIN CONFIGURATION ........................................................................................................................ 4
2. BLOCK DIAGRAM ............................................................................................................................. 6
3. PIN FUNCTIONS ................................................................................................................................ 7
3.1 Port Pins ..................................................................................................................................................... 7
3.2 Non-port Pins ............................................................................................................................................. 8
3.3 I/O Circuits for Pins ................................................................................................................................... 9
3.4 Handling of Unused Pins ........................................................................................................................ 11
4. SWITCHING BETWEEN MK I AND MK II MODES .......................................................................... 12
4.1 Differences between Mk I Mode and Mk II Mode ................................................................................... 12
4.2 Setting of Stack Bank Selection (SBS) Register ................................................................................... 13
5. DIFFERENCES BETWEEN
µ
PD75P0016 AND
µ
PD750004, 750006, AND 750008 ...................... 14
6. MEMORY CONFIGURATION ........................................................................................................... 15
7. INSTRUCTION SET .......................................................................................................................... 17
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY ................................................... 28
8.1 Operation Modes for Program Memory Write/Verify ............................................................................ 28
8.2 Steps in Program Memory Write Operation .......................................................................................... 29
8.3 Steps in Program Memory Read Operation ........................................................................................... 30
8.4 One-Time PROM Screening .................................................................................................................... 31
9. ELECTRICAL SPECIFICATIONS .....................................................................................................32
10. CHARACTERISTIC CURVES (REFERENCE VALUE) .................................................................... 46
11. PACKAGE DRAWINGS .................................................................................................................... 48
12. RECOMMENDED SOLDERING CONDITIONS ................................................................................ 50
APPENDIX A. FUNCTION LIST OF
µ
PD75008, 750008, 75P0016 ....................................................... 52
APPENDIX B. DEVELOPMENT TOOLS................................................................................................. 54
APPENDIX C. RELATED DOCUMENTS ................................................................................................ 58
µ
PD75P0016
4Data Sheet U10328EJ3V3DS
P72/KR6 1P13/TI0
33
P71/KR5 2P00/INT4
32
P70/KR4 3P01/SCK
31
P63/KR3 4P02/SO/SB0
30
P62/KR2 5P03/SI/SB1
29
P61/KR1 6P80
28
P60/KR0 7P81
27
P53/D7 8P30/MD0
26
P52/D6 9P31/MD1
25
P51/D5 10 P32/MD2
24
P50/D4 11 P33/MD3
23
P73/KR7
44
NC
12
P20/PTO0
43
P43/D3
13
P21/PTO1
42
P42/D2
14
P22/PCL
41
P41/D1
15
P23/BUZ
40
P40/D0
16
VDD
39
VSS
17
VPPNote
38
XT1
18
P10/INT0
37
XT2
19
P11/INT1
36
RESET
20
P12/INT2
35
X1
21
NC
34
X2
22
1. PIN CONFIGURATION (Top View)
42-pin plastic shrink DIP (600 mil, 1.778-mm pitch)
µ
PD75P0016CU
µ
PD75P0016CU-A
Note Directly connect VPP to VDD in the normal operation mode.
44-pin plastic QFP (10 × 10 mm, 0.8-mm pitch)
µ
PD75P0016GB-3BS-MTX
µ
PD75P0016GB-3BS-MTX-A
Note Directly connect VPP to VDD in the normal operation mode.
XT1 1VSS
42
XT2 2P40/D0
41
RESET 3P41/D1
40
X1 4P42/D2
39
X2 5P43/D3
38
P33/MD3 6P50/D4
37
P32/MD2 7P51/D5
36
P31/MD1 8P52/D6
35
P30/MD0 9P53/D7
34
P81 10 P60/KR0
33
P80 11 P61/KR1
32
P03/SI/SB1 12 P62/KR2
31
P02/SO/SB0 13 P63/KR3
30
P01/SCK 14 P70/KR4
29
P00/INT4 15 P71/KR5
28
P13/TI0 16 P72/KR6
27
P12/INT2 17 P73/KR7
26
P11/INT1 18 P20/PTO0
25
P10/INT0 19 P21/PTO1
24
VPPNote 20 P22/PCL
23
VDD 21 P23/BUZ
22
µ
PD75P0016
5
Data Sheet U10328EJ3V3DS
PIN IDENTIFICATIONS
P00-P03 : Port0 SCK : Serial Clock
P10-P13 : Port1 SI : Serial Input
P20-P23 : Port2 SO : Serial Output
P30-P33 : Port3 SB0, SB1 : Serial Data Bus 0,1
P40-P43 : Port4 RESET : Reset
P50-P53 : Port5 TI0 : Timer Input 0
P60-P63 : Port6 PTO0, PTO1 : Programmable Timer Output 0, 1
P70-P73 : Port7 BUZ : Buzzer Clock
P80, P81 : Port8 PCL : Programmable Clock
KR0-KR7 : Key Return 0-7 INT0, 1, 4 : External Vectored Interrupt 0, 1, 4
VDD : Positive Power Supply INT2 : External Test Input 2
VSS : Ground X1, X2 : Main System Clock Oscillation 1, 2
VPP : Programming Power Supply XT1, XT2 : Subsystem Clock Oscillation 1, 2
NC : No Connection MD0-MD3 : Mode Selection 0-3
D0-D7 : Data Bus 0-7
µ
PD75P0016
6Data Sheet U10328EJ3V3DS
BIT SEQ.
BUFFER (16)
PORT0 P00-P034
PORT1
PORT2 4
PORT3 P30/MD0-P33/MD34
PORT4 P40/D0-P43/D34
PORT5 P50/D4-P53/D74
PORT6 P60-P634
VSSVDD RESETVPP
CPU CLOCK
Φ
STAND BY
CONTROL
X2X1XT2XT1
SYSTEM CLOCK
GENERATOR
MAINSUB
CLOCK
DIVIDER
CLOCK
OUTPUT
CONTROL
fx/2N
PCL/P22
GENERAL
REGISTER
DATA
MEMORY
(RAM)
512 × 4 BITS
BANK
SBS
SP (8)
CY
ALU
PROGRAM
COUNTER (14)
PROGRAM
MEMORY
(PROM)
16384 × 8 BITS DECODE
AND
CONTROL
BASIC INTERVAL
TIMER/
WATCHDOG
TIMER
TI0/P13
INTBT
8-BIT
TIMER/EVENT
COUNTER #0
PTO0/P20
INTT0
8-BIT TIMER
COUNTER
#1
INTT1
CLOCKED
SERIAL
INTERFACE
SI/SB1/P03
INTERRUPT
CONTROL
INT0/P10
SO/SB0/P02
SCK/P01
INT1/P11
INT2/P12
INT4/P00
KR0/P60-
KR7/P73
WATCH
TIMER
8PORT7 P70-P734
PORT8 P80, P812
P10-P134
P20-P23
PTO1/P21
INTCSI
INTW
BUZ/P23
TOUT0
TOUT0
2. BLOCK DIAGRAM
µ
PD75P0016
7
Data Sheet U10328EJ3V3DS
3. PIN FUNCTIONS
3.1 Port Pins
Pin name I/O Shared by Function 8-bit When I/O circuit
I/O reset type Note 1
P00 I INT4 This is a 4-bit input port (PORT0). ×Input <B>
For P01 to P03, on-chip pull-up resistor connections
P01 I/O SCK are software-specifiable in 3-bit units. <F>-A
P02 I/O SO/SB0 <F>-B
P03 I/O SI/SB1 <M>-C
P10 I INT0 This is a 4-bit input port (PORT1). ×Input <B>-C
On-chip pull-up resistor connections are software-
P11 INT1 specifiable in 4-bit units.
P10/INT0 can select noise elimination circuit.
P12 INT2
P13 TI0
P20 I/O PTO0 This is a 4-bit I/O port (PORT2). ×Input E-B
On-chip pull-up resistor connections are software-
P21 PTO1 specifiable in 4-bit units.
P22 PCL
P23 BUZ
P30 I/O MD0 This is a programmable 4-bit I/O port (PORT3). ×Input E-B
Input and output can be specified in single-bit
P31 MD1 units. On-chip pull-up resistor connections are
software-specifiable in 4-bit units.
P32 MD2
P33 MD3
P40
Note 2 I/O D0 This is an N-ch open-drain 4-bit I/O port (PORT4). High
In the open-drain mode, withstands up to 13 V. impedance M-E
P41
Note 2 D1
P42
Note 2 D2
P43
Note 2 D3
P50
Note 2 I/O D4 This is an N-ch open-drain 4-bit I/O port (PORT5). High
In the open-drain mode, withstands up to 13 V. impedance M-E
P51
Note 2 D5
P52
Note 2 D6
P53
Note 2 D7
P60 I/O KR0 This is a programmable 4-bit I/O port (PORT6). Input <F>-A
Input and output can be specified in single-bit units.
P61 KR1 On-chip pull-up resistor connections are software-
specifiable in 4-bit units.
P62 KR2
P63 KR3
P70 I/O KR4 This is a 4-bit I/O port (PORT7). Input <F>-A
On-chip pull-up resistor connections are software-
P71 KR5 specifiable in 4-bit units.
P72 KR6
P73 KR7
P80 I/O This is a 2-bit I/O port (PORT8). ×Input E-B
On-chip pull-up resistor connections are software-
P81 specifiable in 2-bit units.
Notes 1. Circuit types enclosed in brackets indicate Schmitt triggered inputs.
2. Low-level input current leakage increases when input instructions or bit manipulation instructions are executed.
µ
PD75P0016
8Data Sheet U10328EJ3V3DS
3.2 Non-port Pins
Pin name I/O Shared by Function When I/O circuit
reset type Note 1
TI0 I P13 External event pulse input to timer/event counter Input <B>-C
PTO0 O P20 Timer/event counter output Input E-B
PTO1 P21 Timer counter output
PCL P22 Clock output
BUZ P23 Outputs any frequency (for buzzer or system clock trimming)
SCK I/O P01 Serial clock I/O Input <F>-A
SO/SB0 P02 Serial data output <F>-B
Serial data bus I/O
SI/SB1 P03 Serial data input <M>-C
Serial data bus I/O
INT4 I P00 Edge-triggered vectored interrupt input <B>
(Detects both rising and falling edges).
INT0 I P10 Edge-triggered vectored interrupt input With noise eliminator Input <B>-C
(detected edge is selectable). /asynch selectable
INT0/P10 can select noise elimination
INT1 P11 circuit. Asynch
INT2 P12 Rising edge-triggered testable input Asynch
KR0-KR3 I P60-P63 Falling edge-triggered testable input Input <F>-A
KR4-KR7 I P70-P73 Falling edge-triggered testable input Input <F>-A
X1 I Ceramic/crystal resonator connection for main system clock.
If using an external clock, input it to X1 and input the
X2 inverted clock to X2.
XT1 I Crystal resonator connection for subsystem clock.
If using an external clock, input it to XT1 and input the invert-
XT2 ed clock to X2. XT1 can be used as a 1-bit (test) input.
RESET I System reset input (low level active) <B>
MD0-MD3 I P30-P33 Mode selection for program memory (PROM) write/verify. Input E-B
D0-D3 I/O P40-P43 Data bus pin for program memory (PROM) write/verify. Input M-E
D4-D7 P50-P53
VPP Note 2 —— Programmable voltage supply in program memory (PROM)
write/verify mode.
In normal operation mode, connect directly to VDD.
Apply +12.5 V in PROM write/verify mode.
VDD —— Positive power supply
VSS —— Ground potential
Notes 1. Circuit types enclosed in brackets indicate Schmitt triggered inputs.
2. During normal operation, the VPP pin will not operate normally unless connected to VDD pin.
µ
PD75P0016
9
Data Sheet U10328EJ3V3DS
3.3 I/O Circuits for Pins
The I/O circuits for the
µ
PD75P0016’s pin are shown in schematic diagrams below.
IN
V
DD
P-ch
N-ch
V
DD
P-ch
N-ch
OUT
Data
Output
disable
IN
V
DD
P-ch
IN/OUT
P.U.R.
enable
Data
P.U.R.
Type D
Output
disable
P.U.R. : Pull-Up Resistor
Type A
V
DD
P-ch P.U.R.
enable
P.U.R.
P.U.R. : Pull-Up Resistor
IN
V
DD
P-ch
IN/OUT
P.U.R.
enable
Data
P.U.R.
Type D
Output
disable
P.U.R. : Pull-Up Resistor
Type B
CMOS standard input buffer
Push-pull output that can be set to high impedance output
(with both P-ch and N-ch OFF).
Schmitt trigger input with hysteresis characteristics.
(
Continued
)
TYPE A TYPE D
TYPE E-BTYPE B
TYPE B-C TYPE F-A
µ
PD75P0016
10 Data Sheet U10328EJ3V3DS
P.U.R.
P-ch
P.U.R. : Pull-Up Resistor
data
output
disable
IN/OUT
VDD
P.U.R.
enable
N-ch
TYPE M-E
TYPE M-C
TYPE F-B
P.U.R.
P-ch
IN/OUT
N-ch
P-ch
VDD
P.U.R.
enable
data
output
disable
output
disable
(N)
output
disable
(P)
P.U.R. : Pull-Up Resistor
VDD
N-ch
(+13 V)
IN/OUT
P-ch
VDD
Note Pull-up resistor that operates only when an input
instruction has been executed. (Current flows
from VDD to the pins when at low level)
data
output
disable
Input
instruction
(+13 V)
P.U.R.Note
Voltage
limitation
circuit
µ
PD75P0016
11
Data Sheet U10328EJ3V3DS
Input mode : individually connect to VSS or VDD
via resistor
Output mode : open
3.4 Handling of Unused Pins
Table 3-1. Handling of Unused Pins
Pin Recommended connection
P00/INT4 Connect to VSS or VDD
P01/SCK Individually connect to VSS or VDD via resistor
P02/SO/SB0
P03/SI/SB1 Connect to VSS
P10/INT0-P12/INT2 Connect to VSS or VDD
P13/TI0
P20/PTO0
P21/PTO1
P22/PCL
P23/BUZ
P30/MD0-P33/MD3
P40/D0-P43/D3 Connect to VSS
P50/D4-P53/D7
P60/KR0-P63/KR3
P70/KR4-P73/KR7
P80, P81
XT1Note Connect to VSS
XT2Note Open
VPP Make sure to connect directly to VDD
Note When the subsystem clock is not used, set SOS. 0 to 1 (not to use the internal feedback resistor).
Input mode : individually connect to VSS or VDD
via resistor
Output mode : open
µ
PD75P0016
12 Data Sheet U10328EJ3V3DS
4. SWITCHING BETWEEN MK I AND MK II MODES
Setting a stack bank selection (SBS) register for the
µ
PD75P0016 enables the program memory to be switched
between the Mk I mode and the Mk II mode. This capability enables the evaluation of the
µ
PD750004, 750006, or 750008
using the
µ
PD75P0016.
When the SBS bit 3 is set to 1: sets Mk I mode (corresponds to Mk I mode of
µ
PD750004, 750006, and 750008)
When the SBS bit 3 is set to 0: sets Mk II mode (corresponds to Mk II mode of
µ
PD750004, 750006, and 750008)
4.1 Differences between Mk I Mode and Mk II Mode
Table 4-1 lists the differences between the Mk I mode and the Mk II mode of the
µ
PD75P0016.
Table 4-1. Differences between Mk I Mode and Mk II Mode
Item Mk I mode Mk II mode
Program counter PC13-0
Program memory (bytes) 16384
Data memory (bits) 512 × 4
Stack Stack bank Selectable from memory banks 0 and 1
Stack bytes 2 bytes 3 bytes
Instruction BRA !addr1 None Provided
CALLA !addr1
Instruction CALL !addr 3 machine cycles 4 machine cycles
execution time CALLF !faddr 2 machine cycles 3 machine cycles
Supported mask ROM versions and Mk I mode of
µ
PD750004, 750006, and Mk II mode of
µ
PD750004, 750006, and
mode 750008 750008
Caution The Mk II mode supports a program area which exceeds 16K bytes in the 75X and 75XL series. This
mode enhances the software compatibility with products which have more than 16K bytes.
When the Mk II mode is selected, the number of stack bytes used in execution of a subroutine call
instruction increases by 1 per stack for the usable area compared to the Mk I mode. Furthermore, when
a CALL !addr, or CALLF !faddr instruction is used, each instruction takes another machine cycle.
Therefore, when more importance is attached to RAM utilization or throughput than software
compatibility, use the Mk I mode.
µ
PD75P0016
13
Data Sheet U10328EJ3V3DS
SBS3 SBS2 SBS1 SBS0F84H
Address 3 2 1 0
SBS
0
0
1
1
0
1
0
1
Symbol
Stack area specification
Memory bank 0
Memory bank 1
0Be sure to set 0 for bit 2.
0
1
Mk II mode
Mk I mode
Mode selection specification
Setting prohibited
4.2 Setting of Stack Bank Selection (SBS) Register
Use the stack bank selection register to switch between the Mk I mode and the Mk II mode. Figure 4-1 shows the format
for doing this.
The stack bank selection register is set using a 4-bit memory manipulation instruction. When using the Mk I mode,
be sure to initialize the stack bank selection register to 100×B Note at the beginning of the program. When using the Mk
II mode, be sure to initialize it to 000×B Note.
Note Set the desired value for ×.
Figure 4-1. Format of Stack Bank Selection Register
Caution SBS3 is set to “1” after RESET input, and consequently the CPU operates in the Mk I mode. When using
instructions for the Mk II mode, set SBS3 to “0” to enter the Mk II mode before using the instructions.
µ
PD75P0016
14 Data Sheet U10328EJ3V3DS
5. DIFFERENCES BETWEEN
µ
PD75P0016 AND
µ
PD750004, 750006, AND 750008
The
µ
PD75P0016 replaces the internal mask ROM in the
µ
PD750004, 750006, and 750008 with a one-time PROM
and features expanded ROM capacity. The
µ
PD75P0016’s Mk I mode supports the Mk I mode in the
µ
PD750004, 750006,
and 750008 and the
µ
PD75P0016’s Mk II mode supports the Mk II mode in the
µ
PD750004, 750006, and 750008.
Table 5-2 lists differences among the
µ
PD75P0016 and the
µ
PD750004, 750006, and 750008. Be sure to check the
differences between corresponding versions beforehand, especially when a PROM version is used for debugging or
prototype testing of application systems and later the corresponding mask ROM version is used for full-scale production.
Please refer to the
µ
PD750008 User's Manual (U10740E) for details on CPU functions and on-chip hardware.
Table 5-1. Differences between
µ
PD75P0016 and
µ
PD750004, 750006, and 750008
Item
µ
PD750004
µ
PD750006
µ
PD750008
µ
PD75P0016
Program counter 12-bit 13-bit 14-bit
Program memory (bytes) Mask ROM Mask ROM Mask ROM One-time PROM
4096 6144 8192 16384
Data memory (× 4 bits) 512
Mask options Pull-up resistor for Yes (On-chip/not on-chip can be specified.) No (On-chip not
port 4 and port 5 possible)
Wait time when Yes (217/fx or 215/fx) Note
No (fixed at 2
15
/fx)
Note
RESET
Feedback resistor Yes (can select usable or unusable.) No (usable)
for subsystem clock
Pin connection Pins 6-9 (CU) P33-P30 P33/MD3-P30/MD0
Pins 23-26 (GB)
Pin 20 (CU) IC VPP
Pin 38 (GB)
Pins 34-37 (CU) P53-P50 P53/D7-P50/D4
Pins 8-11 (GB)
Pins 38-41 (CU) P43-P40 P43/D3-P40/D0
Pins 13-16 (GB)
Other Noise resistance and noise radiation may differ due to the different circuit complexities and
mask layouts.
Note 217/fx : 21.8 ms @ 6.0 MHz, 31.3 ms @ 4.19 MHz
215/fx : 5.46 ms @ 6.0 MHz, 7.81 ms @ 4.19 MHz
Caution Noise resistance and noise radiation are different in PROM version and mask ROM versions. If using
a mask ROM version instead of the PROM version for processes between prototype development and
full production, be sure to fully evaluate the CS of the mask ROM version (not ES).
µ
PD75P0016
15
Data Sheet U10328EJ3V3DS
6. MEMORY CONFIGURATION
Figure 6-1. Program Memory Map
Note Can be used only at Mk II mode.
Remark For instructions other than those noted above, the “BR PCDE” and “BR PCXA” instructions can be used to
branch to addresses with changes in the PC’s lower 8 bits only.
MBE
MBE
MBE
MBE
MBE
MBE
MBE
RBE
RBE
RBE
RBE
RBE
RBE
RBE
Internal reset start address (higher 6 bits)
Internal reset start address (lower 8 bits)
INTBT/INT4 start address (higher 6 bits)
INTBT/INT4 start address (lower 8 bits)
INT0 start address (higher 6 bits)
INT0 start address (lower 8 bits)
INT1 start address (higher 6 bits)
INT1 start address (lower 8 bits)
INTCSI start address (higher 6 bits)
INTCSI start address (lower 8 bits)
INTT0 start address (higher 6 bits)
INTT0 start address (lower 8 bits)
INTT1 start address (higher 6 bits)
INTT1 start address (lower 8 bits)
Reference table for GETI instruction
0000H
0002H
0004H
0006H
0008H
000AH
000CH
0020H
007FH
0080H
07FFH
0800H
0FFFH
1000H
1FFFH
2000H
2FFFH
3000H
3FFFH
CALLF
!faddr instruction
entry address
Branch address for
the following instructions
Branch/call
address
by GETI
BR $addr instruction
relative branch address
(–15 to –1,
+2 to +16)
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
76 0
• BR BCDE
• BR BCXA
• BR !addr
• CALL !addr
• BRA !addr1
• CALLA !addr1
Note
Note
µ
PD75P0016
16 Data Sheet U10328EJ3V3DS
(32 × 4)
256 × 4
(224 × 4)
256 × 4
128 × 4
0
1
15
000H
01FH
020H
0FFH
100H
1FFH
F80H
FFFH
General
register
area
Data area
static RAM
(512 × 4)
Stack area
Peripheral hardware area
Data memory Memory bank
Unimplemented
Note
Figure 6-2. Data Memory Map
Note For the stack area, one memory bank can be selected from memory bank 0 or 1.
µ
PD75P0016
17
Data Sheet U10328EJ3V3DS
7. INSTRUCTION SET
(1) Representation and coding formats for operands
In the instruction’s operand area, use the following coding format to describe operands corresponding to the instruction’s
operand representations (for further description, refer to the RA75X Assembler Package User’s Manual [EEU-1363]).
When there are several codes, select and use just one. Upper-case letters, and + and – symbols are key words that should
be entered as they are.
For immediate data, enter an appropriate numerical value or label.
Instead of mem, fmem, pmem, bit, etc, a register flag symbol can be described as a label descriptor. (For further
description, refer to the
µ
PD750008 User's Manual [U10740E]) Labels that can be entered for fmem and pmem are
restricted.
Representation Coding format
reg X, A, B, C, D, E, H, L
reg1 X, B, C, D, E, H, L
rp XA, BC, DE, HL
rp1 BC, DE, HL
rp2 BC, DE
rp’ XA, BC, DE, HL, XA’, BC’, DE’, HL’
rp’1 BC, DE, HL, XA’, BC’, DE’, HL’
rpa HL, HL+, HL–, DE, DL
rpa1 DE, DL
n4 4-bit immediate data or label
n8 8-bit immediate data or label
mem 8-bit immediate data or label Note
bit 2-bit immediate data or label
fmem FB0H-FBFH, FF0H-FFFH immediate data or label
pmem FC0H-FFFH immediate data or label
addr 0000H-3FFFH immediate data or label
addr1 0000H-3FFFH immediate data or label (in Mk II mode only)
caddr 12-bit immediate data or label
faddr 11-bit immediate data or label
taddr 20H-7FH immediate data (however, bit0 = 0) or label
PORTn PORT0-PORT8
IEXXX IEBT, IECSI, IET0, IET1, IE0-IE2, IE4, IEW
RBn RB0-RB3
MBn MB0, MB1, MB15
Note When processing 8-bit data, only even addresses can be specified.
µ
PD75P0016
18 Data Sheet U10328EJ3V3DS
(2) Operation legend
A: A register; 4-bit accumulator
B: B register
C: C register
D: D register
E: E register
H: H register
L: L register
X: X register
XA : Register pair (XA); 8-bit accumulator
BC : Register pair (BC)
DE : Register pair (DE)
HL : Register pair (HL)
XA’ : Expansion register pair (XA’)
BC’ : Expansion register pair (BC’)
DE’ : Expansion register pair (DE’)
HL’ : Expansion register pair (HL’)
PC : Program counter
SP : Stack pointer
CY : Carry flag; bit accumulator
PSW : Program status word
MBE : Memory bank enable flag
RBE : Register bank enable flag
PORTn : Port n (n = 0 to 8)
IME : Interrupt master enable flag
IPS : Interrupt priority select register
IE××× : Interrupt enable flag
RBS : Register bank select register
MBS : Memory bank select register
PCC : Processor clock control register
.: Delimiter for address and bit
(××): Contents of address ××
××H: Hexadecimal data
µ
PD75P0016
19
Data Sheet U10328EJ3V3DS
(3) Description of symbols used in addressing area
Remarks 1. MB indicates access-enabled memory banks.
2. In area *2, MB = 0 for both MBE and MBS.
3. In areas *4 and *5, MB = 15 for both MBE and MBS.
4. Areas *6 to *11 indicate corresponding address-enabled areas.
MB = 0 (000H-07FH)
MB = 15 (F80H-FFFH)
MB = MBS
MBS = 0, 1, 15
MB = MBE • MBS
MBS = 0, 1, 15
*1
MB = 0
*2
MBE = 1 :
MBE = 0 :
*3
MB = 15, fmem = FB0H-FBFH, FF0H-FFFH
MB = 15, pmem = FC0H-FFFH
addr = 0000H-3FFFH
*4
*5
*6
addr, addr1 =
*7 (Current PC) –15 to (Current PC) –1
(Current PC) +2 to (Current PC) +16
*8
caddr = 0000H-0FFFH (PC
13
,
12
= 00B) or
1000H-1FFFH (PC
13
,
12
= 01B) or
2000H-2FFFH (PC
13
,
12
= 10B) or
3000H-3FFFH (PC
13
,
12
= 11B)
faddr = 0000H-07FFH
taddr = 0020H-007FH
addr1 = 0000H-3FFFH (Mk II mode only)
*9
*10
*11
Program memory
addressing
Data memory
addressing
µ
PD75P0016
20 Data Sheet U10328EJ3V3DS
(4) Description of machine cycles
S indicates the number of machine cycles required for skipping of skip-specified instructions. The value of S varies as
shown below.
• No skip .......................................................................... S = 0
• Skipped instruction is 1-byte or 2-byte instruction......... S = 1
• Skipped instruction is 3-byte instruction Note ................. S = 2
Note 3-byte instructions: BR !addr, BRA !addr1, CALL !addr, CALLA !addr1
Caution The GETI instruction is skipped for one machine cycle.
One machine cycle equals one cycle (= tCY) of the CPU clock Φ. Use the PCC setting to select among four cycle times.
µ
PD75P0016
21
Data Sheet U10328EJ3V3DS
Group Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
bytes cycle area
condition
Transfer MOV A, # n4 1 1 A n4 String-effect A
reg1, # n4 2 2 reg1 n4
XA, # n8 2 2 XA n8 String-effect A
HL, # n8 2 2 HL n8 String-effect B
rp2, # n8 2 2 rp2 n8
A, @HL 1 1 A (HL) *1
A, @HL+ 1 2 + S A (HL), then L L + 1 *1 L = 0
A, @HL– 1 2 + S A (HL), then L L – 1 *1 L = FH
A, @rpa1 1 1 A (rpa1) *2
XA, @HL 2 2 XA (HL) *1
@HL, A 1 1 (HL) A*1
@HL, XA 2 2 (HL) XA *1
A, mem 2 2 A (mem) *3
XA, mem 2 2 XA (mem) *3
mem, A 2 2 (mem) A*3
mem, XA 2 2 (mem) XA *3
A, reg 2 2 A reg
XA, rp’ 2 2 XA rp’
reg1, A 2 2 reg1 A
rp’1, XA 2 2 rp’1 XA
XCH A, @HL 1 1 A (HL) *1
A, @HL+ 1 2 + S A (HL), then L L + 1 *1 L = 0
A, @HL– 1 2 + S A (HL), then L L – 1 *1 L = FH
A, @rpa1 1 1 A (rpa1) *2
XA, @HL 2 2 XA (HL) *1
A, mem 2 2 A (mem) *3
XA, mem 2 2 XA (mem) *3
A, reg1 1 1 A reg1
XA, rp’ 2 2 XA rp’
Table MOVT XA, @PCDE 1 3 XA (PC13-8 + DE)ROM
reference XA, @PCXA 1 3 XA (PC13-8 + XA)ROM
XA, @BCDE 1 3 XA (BCDE)ROM Note *6
XA, @BCXA 1 3 XA (BCXA)ROM Note *6
Note As for the B register, only the lower 2 bits are valid.
µ
PD75P0016
22 Data Sheet U10328EJ3V3DS
Group Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
bytes cycle area
condition
Bit transfer MOV1 CY, fmem.bit 2 2 CY (fmem.bit) *4
CY, pmem.@L 2 2 CY (pmem7-2 + L3-2.bit(L1-0)) *5
CY, @H + mem.bit 2 2 CY (H + mem3-0.bit) *1
fmem.bit, CY 2 2 (fmem.bit) CY *4
pmem.@L, CY 2 2 (pmem7-2 + L3-2.bit(L1-0)) CY *5
@H + mem.bit, CY 2 2 (H + mem3-0.bit) CY *1
Operation ADDS A, #n4 1 1 + S A A + n4 carry
XA, #n8 2 2 + S XA XA + n8 carry
A, @HL 1 1 + S A A + (HL) *1 carry
XA, rp’ 2 2 + S XA XA + rp’ carry
rp’1, XA 2 2 + S rp’1 rp’1 + XA carry
ADDC A, @HL 1 1 A, CY A + (HL) + CY *1
XA, rp’ 2 2 XA, CY XA + rp’ + CY
rp’1, XA 2 2 rp’1, CY rp’1 + XA + CY
SUBS A, @HL 1 1 + S A A – (HL) *1 borrow
XA, rp’ 2 2 + S XA XA – rp’ borrow
rp’1, XA 2 2 + S rp’1 rp’1 – XA borrow
SUBC A, @HL 1 1 A, CY A – (HL) – CY *1
XA, rp’ 2 2 XA, CY XA – rp’ – CY
rp’1, XA 2 2 rp’1, CY rp’1 – XA – CY
AND A, #n4 2 2 A A ^ n4
A, @HL 1 1 A A ^ (HL) *1
XA, rp’ 2 2 XA XA ^ rp’
rp’1, XA 2 2 rp’1 rp’1 ^ XA
OR A, #n4 2 2 A A v n4
A, @HL 1 1 A A v (HL) *1
XA, rp’ 2 2 XA XA v rp’
rp’1, XA 2 2 rp’1 rp’1 v XA
XOR A, #n4 2 2 A A v n4
A, @HL 1 1 A A v (HL) *1
XA, rp’ 2 2 XA XA v rp’
rp’1, XA 2 2 rp’1 rp’1 v XA
µ
PD75P0016
23
Data Sheet U10328EJ3V3DS
Group Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
bytes cycle area
condition
Accumulator RORC A 1 1 CY A0, A3 CY, An-1 An
manipulate NOT A 2 2 A A
Increment/ INCS reg 1 1 + S reg reg + 1 reg = 0
decrement rp1 1 1 + S rp1 rp1 + 1 rp1 = 00H
@HL 2 2 + S (HL) (HL) + 1 *1 (HL) = 0
mem 2 2 + S (mem) (mem) + 1 *3 (mem) = 0
DECS reg 1 1 + S reg reg – 1 reg = FH
rp’ 2 2 + S rp’ rp’ – 1 rp’ = FFH
Compare SKE reg, #n4 2 2 + S Skip if reg = n4 reg = n4
@HL, #n4 2 2 + S Skip if (HL) = n4 *1 (HL) = n4
A, @HL 1 1 + S Skip if A = (HL) *1 A = (HL)
XA, @HL 2 2 + S Skip if XA = (HL) *1 XA = (HL)
A, reg 2 2 + S Skip if A = reg A = reg
XA, rp’ 2 2 +S Skip if XA = rp’ XA = rp’
Carry flag SET1 CY 1 1 CY 1
manipulate CLR1 CY 1 1 CY 0
SKT CY 1 1 + S Skip if CY = 1 CY = 1
NOT1 CY 1 1 CY CY
µ
PD75P0016
24 Data Sheet U10328EJ3V3DS
Group Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
bytes cycle area
condition
Memory bit SET1 mem.bit 2 2 (mem.bit) 1*3
manipulate fmem.bit 2 2 (fmem.bit) 1 *4
pmem.@L 2 2 (pmem7-2 + L3-2.bit(L1-0)) 1 *5
@H + mem.bit 2 2 (H + mem3-0.bit) 1*1
CLR1 mem.bit 2 2 (mem.bit) 0 *3
fmem.bit 2 2 (fmem.bit) 0 *4
pmem.@L 2 2 (pmem7-2 + L3-2.bit(L1-0)) 0 *5
@H + mem.bit 2 2 (H + mem3-0.bit) 0*1
SKT mem.bit 2 2 + S Skip if(mem.bit) = 1 *3 (mem.bit) = 1
fmem.bit 2 2 + S Skip if(fmem.bit) = 1 *4 (fmem.bit) = 1
pmem.@L 2 2 + S Skip if(pmem7-2 + L3-2.bit(L1-0)) = 1 *5 (pmem.@L) = 1
@H + mem.bit 2 2 + S Skip if(H + mem3-0.bit) = 1 *1
(@H + mem.bit) = 1
SKF mem.bit 2 2 + S Skip if(mem.bit) = 0 *3 (mem.bit) = 0
fmem.bit 2 2 + S Skip if(fmem.bit) = 0 *4 (fmem.bit) = 0
pmem.@L 2 2 + S Skip if(pmem7-2 + L3-2.bit(L1-0)) = 0 *5 (pmem.@L) = 0
@H + mem.bit 2 2 + S Skip if(H + mem3-0.bit) = 0 *1
(@H + mem.bit) = 0
SKTCLR fmem.bit 2 2 + S Skip if(fmem.bit) = 1 and clear *4 (fmem.bit) = 1
pmem.@L 2 2 + S
Skip if(pmem7-2 + L3-2.bit (L1-0)) = 1 and clear
*5 (pmem.@L) = 1
@H + mem.bit 2 2 + S Skip if(H + mem3-0.bit) = 1 and clear *1
(@H + mem.bit) = 1
AND1 CY, fmem.bit 2 2 CY CY ^ (fmem.bit) *4
CY, pmem.@L 2 2 CY CY ^ (pmem7-2 + L3-2.bit(L1-0)) *5
CY, @H + mem.bit 2 2 CY CY ^ (H + mem3-0.bit) *1
OR1 CY, fmem.bit 2 2 CY CY v (fmem.bit) *4
CY, pmem.@L 2 2 CY CY v (pmem7-2 + L3-2.bit(L1-0)) *5
CY, @H + mem.bit 2 2 CY CY v (H + mem3-0.bit) *1
XOR1 CY, fmem.bit 2 2 CY CY v (fmem.bit) *4
CY, pmem.@L 2 2 CY CY v (pmem7-2 + L3-2.bit(L1-0)) *5
CY, @H + mem.bit 2 2 CY CY v (H + mem3-0.bit) *1
µ
PD75P0016
25
Data Sheet U10328EJ3V3DS
Group Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
bytes cycle area
condition
Branch BR Note 1 addr PC13-0 addr *6
Assembler selects the most
appropriate instruction among
the following:
• BR !addr
• BRCB !caddr
• BR $addr
addr1 PC13-0 addr1 *11
Assembler selects the most
appropriate instruction among
the following:
• BRA !addr1
• BR !addr
• BRCB !caddr
• BR $addr1
!addr 3 3 PC13-0 addr *6
$addr 1 2 PC13-0 addr *7
$addr1 1 2 PC13-0 addr1
PCDE 2 3 PC13-0 PC13-8 + DE
PCXA 2 3 PC13-0 PC13-8 + XA
BCDE 2 3 PC13-0 BCDE Note 2 *6
BCXA 2 3 PC13-0 BCXA Note 2 *6
BRA Note 1 !addr1 3 3 PC13-0 addr1 *11
BRCB !caddr 2 2 PC13-0 PC13, 12 + caddr11-0 *8
Notes 1. Shaded areas indicate support for the Mk II mode only. Other areas indicate support for the Mk I mode only.
2. As for the B register, only the lower 2 bits are valid.
µ
PD75P0016
26 Data Sheet U10328EJ3V3DS
Group Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
bytes cycle area
condition
Subroutine CALLA Note !addr1 3 3 (SP – 5) 0, 0, PC13,12 *11
stack control (SP – 6)(SP – 3)(SP – 4) PC11-0
(SP – 2)
×, ×, MBE, RBE
PC13–0
addr1, SP
SP – 6
CALL Note !addr 3 3 (SP
4)(SP
1)(SP
2)
PC11-0 *6
(SP
3)
(MBE, RBE, PC13, 12)
PC13–0
addr, SP
SP – 4
4(SP – 5) 0, 0, PC13,12
(SP – 6)(SP – 3)(SP – 4) PC11-0
(SP
2)
×, ×, MBE, RBE
PC13-0
addr, SP
SP
6
CALLF Note !faddr 2 2 (SP
4)(SP
1)(SP
2)
PC11-0 *9
(SP
3)
(MBE, RBE, PC13, 12)
PC13-0
000 + faddr, SP
SP – 4
3(SP – 5) 0, 0, PC13,12
(SP – 6)(SP – 3)(SP – 4) PC11-0
(SP – 2)
×, ×, MBE, RBE
PC13-0
000 + faddr,SP
SP – 6
RET Note 13(MBE, RBE, PC13, 12)
(SP + 1)
PC11-0
(SP)(SP + 3)(SP + 2)
SP
SP + 4
×, ×, MBE, RBE
(SP + 4)
0, 0, PC13-12
(SP + 1)
PC11-0
(SP)(SP + 3)(SP + 2)
SP
SP + 6
RETS Note 13 + S (MBE, RBE, PC13, 12)
(SP + 1) Unconditional
PC11-0
(SP)(SP + 3)(SP + 2)
SP
SP + 4
then skip unconditionally
×, ×, MBE, RBE
(SP + 4)
0, 0, PC13-12
(SP + 1)
PC11-0
(SP)(SP + 3)(SP + 2)
SP
SP + 6
then skip unconditionally
RETI Note 13MBE, RBE, PC13, 12
(SP + 1)
PC11-0
(SP)(SP + 3)(SP + 2)
PSW
(SP + 4)(SP + 5), SP
SP + 6
0, 0, PC13, 12
(SP + 1)
PC11-0
(SP)(SP + 3)(SP + 2)
PSW
(SP + 4)(SP + 5), SP
SP + 6
Note Shaded areas indicate support for the Mk II mode only. Other areas indicate support for the Mk I mode only.
µ
PD75P0016
27
Data Sheet U10328EJ3V3DS
- - - - - - - - - - -
- - - - - - - - - - -
- - - - - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Group Mnemonic Operand
No. of Machine
Operation
Addressing
Skip
bytes cycle area
condition
Subroutine PUSH rp 1 1 (SP – 1)(SP – 2)
rp, SP
SP – 2
stack control BS 2 2
(SP – 1) MBS, (SP – 2) RBS, SP SP – 2
POP rp 1 1 rp
(SP + 1)(SP), SP
SP + 2
BS 2 2
MBS (SP + 1), RBS (SP), SP SP + 2
Interrupt EI 2 2 IME(IPS.3)
1
control IE××× 22IE×××
1
DI 2 2 IME(IPS.3)
0
IE××× 22IE×××
0
I/O IN Note 1 A, PORTn 2 2 A
PORTn (n = 0 - 8)
XA, PORTn 2 2 XA
PORTn+1, PORTn (n = 4, 6)
OUT Note 1 PORTn, A 2 2 PORTn
A (n = 2 - 8)
PORTn, XA 2 2 PORTn+1, PORTn
XA (n = 4, 6)
CPU control HALT 2 2 Set HALT Mode(PCC.2
1)
STOP 2 2 Set STOP Mode(PCC.3
1)
NOP 1 1 No Operation
Special SEL RBn 2 2 RBS
n (n = 0 - 3)
MBn 2 2 MBS
n (n = 0, 1, 15)
GETI
Note 2, 3
taddr 1 3 • When using TBR instruction *10
PC13-0
(taddr)5-0 + (taddr + 1)
• When using TCALL instruction
(SP – 4)(SP – 1)(SP – 2)
PC11-0
(SP – 3)
MBE, RBE, PC13, 12
PC13-0
(taddr)5-0 + (taddr + 1)
SP
SP – 4
• When using instruction other than Determined by
TBR or TCALL referenced
Execute (taddr)(taddr + 1) instructions instruction
13• When using TBR instruction *10
PC13-0
(taddr)5-0 + (taddr + 1)
4• When using TCALL instruction
(SP – 5)
0, 0, PC13, 12
(SP – 6)(SP – 3)(SP – 4)
PC11-0
(SP
2)
×, ×, MBE, RBE
PC13-0
(taddr)5-0 + (taddr + 1)
SP
SP – 6
3• When using instruction other than Determined by
TBR or TCALL referenced
Execute (taddr)(taddr + 1) instructions instruction
Notes 1. Before executing the IN or OUT instruction, set MBE to 0 or 1 and set MBS to 15.
2. TBR and TCALL are assembler directives for the GETI instruction’s table definitions.
3. Shaded areas indicate support for the Mk II mode only. Other areas indicate support for the Mk I mode only.
µ
PD75P0016
28 Data Sheet U10328EJ3V3DS
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY
The program memory in the
µ
PD75P0016 is a 16384 × 8-bit electronic write-enabled one-time PROM. The pins listed
in the table below are used for this PROM’s write/verify operations. Clock input from the X1 pins is used instead of address
input as a method for updating addresses.
Pin name Function
VPP Pin (usually VDD) where programming voltage is applied during
program memory write/verify
X1, X2 Clock input pin for address updating during program memory
write/verify. Input the X1 pin’s inverted signal to the X2 pin.
MD0/P30-MD3/P33 Operation mode selection pin for program memory write/verify
D0/P40-D3/P43 (lower 4) 8-bit data I/O pin for program memory write/verify
D4/P50-D7/P53 (higher 4)
VDD Pin where power supply voltage is applied. Power voltage
range for normal operation is 2.2 to 5.5 V. Apply 6.0 V for
program memory write/verify.
Caution Pins not used for program memory write/verify should be processed as follows.
• All unused pins except XT2 ...... Connect to Vss via a pull-down resistor
• XT2 pin ........................................ Leave open
8.1 Operation Modes for Program Memory Write/Verify
When +6 V is applied to the
µ
PD75P0016’s VDD pin and +12.5 V is applied to its VPP pin, program write/verify modes
are in effect. Furthermore, the following detailed operation modes can be specified by setting pins MD0 to MD3 as shown
below.
Operation mode specification Operation mode
VPP VDD MD0 MD1 MD2 MD3
+12.5 V +6 V H L H L Zero-clear program memory address
LHHHWrite mode
LLHHVerify mode
H×HHProgram inhibit mode
Remark ×: L or H
µ
PD75P0016
29
Data Sheet U10328EJ3V3DS
VPP
VDD
VDD + 1
VDD
VPP
VDD
X1
D0/P40-D3/P43
D4/P50-D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
X repetitions
Write Verify Additional
write Address increment
Data input
Data output
Data input
8.2 Steps in Program Memory Write Operation
High-speed program memory write can be executed via the following steps.
(1) Pull down unused pins to VSS via resistors. Set the X1 pin to low.
(2) Apply +5 V to the VDD and VPP pins.
(3) Wait 10
µ
s.
(4) Zero-clear mode for program memory addresses.
(5) Apply +6 V to VDD and +12.5 V power to VPP.
(6) Write data using 1-ms write mode.
(7) Verify mode. If write is verified, go to step (8) and if write is not verified, go back to steps (6) and (7).
(8) X [= number of write operations from steps (6) and (7)] × 1 ms additional write
(9) 4 pulse inputs to the X1 pin updates (increments +1) the program memory address.
(10) Repeat steps (6) to (9) until the last address is completed.
(11) Zero-clear mode for program memory addresses.
(12) Apply +5 V to the VDD and VPP pins.
(13) Power supply OFF
The following diagram illustrates steps (2) to (9).
µ
PD75P0016
30 Data Sheet U10328EJ3V3DS
8.3 Steps in Program Memory Read Operation
The
µ
PD75P0016 can read out the program memory contents via the following steps.
(1) Pull down unused pins to VSS via resistors. Set the X1 pin to low.
(2) Apply +5 V to the VDD and VPP pins.
(3) Wait 10
µ
s.
(4) Zero-clear mode for program memory addresses.
(5) Apply +6 V power to VDD and +12.5 V to VPP.
(6) Verify mode. When a clock pulse is input to the X1 pin, data is output sequentially to one address at a time based
on a cycle of four pulse inputs.
(7) Zero-clear mode for program memory addresses.
(8) Apply +5 V power to the VDD and VPP pins.
(9) Power supply OFF
The following diagram illustrates steps (2) to (7).
V
PP
V
DD
V
DD
+ 1
V
DD
V
PP
V
DD
X1
D0/P40-D3/P43
D4/P50-D7/P53 Data output Data output
MD0/P30
MD2/P32
MD3/P33
MD1/P31 “L”
µ
PD75P0016
31
Data Sheet U10328EJ3V3DS
8.4 One-Time PROM Screening
Due to its structure, the one-time PROM cannot be fully tested before shipment by NEC Electronics. Therefore, NEC
Electronics recommends the screening process, that is, after the required data is written to the PROM and the PROM is
stored under the high- temperature conditions shown below, the PROM should be verified.
Storage temperature Storage time
125˚C 24 hours
At present, a fee is charged by NEC Electronics for one-time PROM after-programming imprinting, screening, and
verify service for the QTOP Microcontroller. For details, contact an NEC Electronics sales representative.
µ
PD75P0016
32 Data Sheet U10328EJ3V3DS
9. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings (TA = 25˚C)
Parameter Symbol Conditions Ratings Unit
Supply voltage VDD –0.3 to + 7.0 V
PROM supply voltage VPP –0.3 to + 13.5 V
Input voltage VI1 Other than port 4, 5 –0.3 to VDD + 0.3 V
VI2 Port 4, 5 (N-ch open drain) –0.3 to + 14 V
Output voltage VO–0.3 to VDD + 0.3 V
High-level output current IOH Per pin –10 mA
Total of all pins –30 mA
Low-level output current IOL Per pin 30 mA
Total of all pins 220 mA
Operating ambient TA–40 to + 85 ˚C
temperature
Storage temperature Tstg –65 to + 150 ˚C
Caution If the absolute maximum rating of even one of the parameters is exceeded even momentarily,
the quality of the product may be degraded. The absolute maximum ratings are therefore values
which, when exceeded, can cause the product to be damaged. Be sure that these values are
never exceeded when using the product.
Capacitance (TA = 25˚C, VDD = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input capacitance CIN f = 1 MHz 15 pF
Output capacitance COUT Pins other than tested pins: 0 V 15 pF
I/O capacitance CIO 15 pF
µ
PD75P0016
33
Data Sheet U10328EJ3V3DS
Main System Clock Oscillation Circuit Characteristics (TA = – 40 to +85˚C)
Resonator Recommended Parameter Conditions MIN. TYP. MAX. Unit
constants
Ceramic Oscillation frequency VDD = 2.2 to 5.5 V 1.0
6.0
Note 2
MHz
resonator (fX) Note 1
Oscillation After VDD has 4 ms
stabilization time Note 3 reached MIN. value of
oscillation voltage
range
Crystal Oscillation frequency VDD = 2.2 to 5.5 V 1.0
6.0
Note 2
MHz
resonator (fX) Note 1
Oscillation VDD = 4.5 to 5.5 V 10 ms
stabilization time Note 3
VDD = 2.2 to 5.5 V 30 ms
External X1 input frequency VDD = 1.8 to 5.5 V 1.0
6.0
Note 4
MHz
clock (fX) Note 1
X1 input high-, VDD = 1.8 to 5.5 V 83.3 500 ns
low-level widths
(tXH, tXL)
Notes 1. The oscillation frequency and X1 input frequency shown above indicate characteristics of the oscillation
circuit only. For the instruction execution time, refer to AC Characteristics.
2. If the oscillation frequency is 4.7 MHz < fX 6.0 MHz at 2.2 V VDD < 2.7 V of the supply voltage, please
do not set processor clock control register (PCC) = 0011. If PCC = 0011, one machine cycle is less than
0.85
µ
s, falling short of the rated value of 0.85
µ
s.
3. The oscillation stablilization time is the time required for oscillation to be stabilized after VDD has been
applied or STOP mode has been released.
4. If the X1 input frequency is 4.19 MHz < fx 6.0 MHz at 1.8 V VDD < 2.7 V of the supply voltage, please
do not set PCC = 0011. If PCC = 0011, one machine cycle time is less than 0.95
µ
s, falling short of the
rated value of 0.95
µ
s.
Caution When using the main system clock oscillation circuit, wire the portion enclosed in the dotted
line in the above figure as follows to prevent adverse influences due to wiring capacitance:
·Keep the wiring length as short as possible.
·Do not cross the wiring with other signal lines.
·Do not route the wiring in the vicinity of a line through which a high alternating current flows.
·Always keep the ground point of the capacitor of the oscillation circuit at the same potential
as VDD.
Do not ground to a power supply pattern through which a high current flows.
·Do not extract signals from the oscillation circuit.
X1 X2
C1 C2
X1 X2
C1 C2
X1 X2
µ
PD75P0016
34 Data Sheet U10328EJ3V3DS
XT1 XT2
Subsystem Clock Oscillation Circuit Characteristics (TA = –40 to +85˚C)
Resonator Recommended Parameter Conditions MIN. TYP. MAX. Unit
constants
Crystal Oscillation frequency VDD = 2.2 to 5.5 V 32 32.768 35 kHz
resonator (fXT) Note 1
Oscillation VDD = 4.5 to 5.5 V 1.0 2 s
stabilization time Note 2
VDD = 2.2 to 5.5 V 10 s
External XT1 input frequency VDD = 1.8 to 5.5 V 32 100 kHz
clock (fXT) Note 1
XT1 input high-, VDD = 1.8 to 5.5 V 5 15
µ
s
low-level widths
(tXTH, tXTL)
Notes 1. The oscillation frequency shown above indicate characteristics of the oscillation circuit only. For the
instruction execution time, refer to AC Characteristics.
2. The oscillation stabilization time is the time required for oscillation to be stabilized after VDD has been
applied.
Caution When using the subsystem clock oscillation circuit, wire the portion enclosed in the dotted line
in the above figure as follows to prevent adverse influences due to wiring capacitance:
·Keep the wiring length as short as possible.
·Do not cross the wiring with other signal lines.
·Do not route the wiring in the vicinity of a line through which a high alternating current flows.
·Always keep the ground point of the capacitor of the oscillation circuit at the same potential
as VDD.
Do not ground to a power supply pattern through which a high current flows.
·Do not extract signals from the oscillation circuit.
The subsystem clock oscillation circuit has a low amplification factor to reduce current
dissipation and is more susceptible to noise than the main system clock oscillation circuit.
Therefore, exercise utmost care in wiring the subsystem clock oscillation circuit.
RECOMMENDED OSCILLATION CIRCUIT CONSTANT
Main System Clock: Ceramic Resonator (TA = –40 to +85˚C)
Oscillation Circuit Oscillation Voltage
Manufacturer Part Number Frequency Constant (pF) Range (VDD)Remark
(MHz) C1 C2 MIN. (V) MAX. (V)
TDK Corp. CCR4.0MC32 4.0 10 10 2.3 5.5
Caution The oscillation circuit constants and oscillation voltage range indicate conditions for stable
oscillation but do not guarantee accuracy of the oscillation frequency. If the application circuit
requires accuracy of the oscillation frequency, it is necessary to set the oscillation frequency
of the resonator in the application circuit. For this, it is necessary to directly contact the
manufacturer of the resonator being used.
XT1 XT2
C3 C4
R
µ
PD75P0016
35
Data Sheet U10328EJ3V3DS
DC Characteristics (TA = –40 to + 85˚C, VDD = 2.2 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Low-level IOL Per pin 15 mA
output current Total of all pins 150 mA
High-level input VIH1 Ports 2, 3, 8 2.7 VDD 5.5 V 0.7 VDD VDD V
voltage 2.2 VDD 2.7 V 0.9 VDD VDD V
VIH2 Ports 0, 1, 6, 7, RESET 2.7 VDD 5.5 V 0.8 VDD VDD V
2.2 VDD 2.7 V 0.9 VDD VDD V
VIH3 Ports 4, 5 (N-ch open drain) 2.7 VDD 5.5 V 0.7 VDD 13 V
2.2 VDD 2.7 V 0.9 VDD 13 V
VIH4 X1, XT1 VDD–0.1 VDD V
Low-level input VIL1 Ports 2-5, 8 2.7 VDD 5.5 V 0 0.3 VDD V
voltage 2.2 VDD 2.7 V 0 0.1 VDD V
VIL2 Ports 0, 1, 6, 7, RESET 2.7 VDD 5.5 V 0 0.2 VDD V
2.2 VDD 2.7 V 0 0.1 VDD V
VIL3 X1, XT1 0 0.1 V
High-level output VOH SCK, SO, ports 2, 3, 6-8 VDD–0.5 V
voltage IOH = –1.0 mA
Low-level output VOL1 SCK, SO, IOL = 15 mA, VDD = 4.5 to 5.5 V 0.2 2.0 V
voltage ports 2-8 IOL = 1.6 mA 0.4 V
VOL2 SB0, SB1 N-ch open drain 0.2 VDD V
Pull-up resistor 1 k
High-level input ILIH1 VIN = VDD Pins other than X1 and XT1 3
µ
A
leakage current ILIH2 X1, XT1 20
µ
A
ILIH3 VIN = 13 V Ports 4, 5 (N-ch open drain) 20
µ
A
Low-level input ILIL1 VIN = 0 V Pins other than ports 4, 5, X1 and XT1 –3
µ
A
leakage current ILIL2 X1, XT1 –20
µ
A
ILIL3 Ports 4, 5 (N-ch open drain) When –3
µ
A
input instruction is not executed
Ports 4, 5 (N-ch –30
µ
A
open drain)
When input VDD = 5.0 V –10 –27
µ
A
instruction is
VDD = 3.0 V –3 –8
µ
A
executed
High-level output ILOH1 VOUT = VDD SCK, SO/SB0, SB1, Ports 2, 3, 6-8 3
µ
A
leakage current ILOH2
VOUT = 13 V
Ports 4, 5 (N-ch open drain) 20
µ
A
Low-level output ILOL VOUT = 0 V –3
µ
A
leakage current
Internal pull-up RLVIN = 0 V Ports 0-3, 6-8 (except P00 pin) 50 100 200 k
resistor
µ
PD75P0016
36 Data Sheet U10328EJ3V3DS
DC Characteristics (TA = –40 to + 85˚C, VDD = 2.2 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply current
Note 1
IDD1 VDD = 5.0 V ± 10 %
Note 3
3.7 11.0 mA
VDD = 3.0 V ± 10 %
Note 4
0.73 2.2 mA
IDD2 VDD = 5.0 V ± 10 % 0.92 2.6 mA
VDD = 3.0 V ± 10 % 0.3 0.9 mA
IDD1 VDD = 5.0 V ± 10 %
Note 3
2.7 8.0 mA
VDD = 3.0 V ± 10 %
Note 4
0.57 1.7 mA
IDD2 VDD = 5.0 V ± 10 % 0.9 2.5 mA
VDD = 3.0 V ± 10 % 0.28 0.8 mA
IDD3 VDD = 3.0 V ± 10 % 42 126
µ
A
VDD = 2.5 V ± 10 % 23 69
µ
A
VDD = 3.0 V, TA = 25 ˚C 42 84
µ
A
VDD = 3.0 V ± 10 % 39 117
µ
A
VDD = 3.0 V, TA = 25 ˚C 39 78
µ
A
IDD4
VDD = 3.0 V ± 10 %
8.5 25
µ
A
VDD = 2.5 V ± 10 %
5.0 15
µ
A
VDD = 3.0 V, TA = 25 ˚C
8.5 17
µ
A
VDD = 3.0 V ± 10 %
3.5 12
µ
A
VDD = 3.0 V, TA = 25 ˚C
3.5 7
µ
A
IDD5 VDD = 5.0 V ± 10 % 0.05 10
µ
A
VDD = 3.0 V ± 10 % 0.02 5
µ
A
TA = 25 ˚C 0.02 3
µ
A
Notes 1. The current flowing through the internal pull-up resistor is not included.
2. Including the case when the subsystem clock oscillates.
3. When the device operates in high-speed mode with the processor clock control register (PCC) set to
0011.
4. When the device operates in low-speed mode with PCC set to 0000.
5. When the device operates on the subsystem clock, with the system clock control register (SCC) set to
1001 and oscillation of the main system clock stopped.
6. When the suboscillation circuit control register (SOS) is set to 0000.
7. When SOS is set to 0010.
8. When SOS is set to 00×1, and the suboscillation circuit feedback resistor is not used (×: don’t care).
6.0 MHz
Note 2
crystal oscillation
C1 = C2
= 22 pF
4.19 MHz
Note 2
crystal oscillation
C1 = C2
= 22 pF
Low current
consumption
mode
Note 7
Low current
dissipation
mode
Note 7
XT1 = 0V
Note 8
STOP
mode
32.768
kHz
Note 5
crystal oscillation
HALT
mode
HALT
mode
HALT
mode
Low-
voltage
mode
Note 6
Low-
voltage
mode
Note 6
µ
PD75P0016
37
Data Sheet U10328EJ3V3DS
AC Characteristics (TA = –40 to + 85˚C, VDD = 2.2 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
CPU clock cycle tCY VDD = 2.7 to 5.5 V 0.67 64
µ
s
timeNote 1 0.85 64
µ
s
(minimum instruction VDD = 2.7 to 5.5 V 0.67 64
µ
s
execution time = 1 VDD = 1.8 to 5.5 V 0.95 64
µ
s
machine cycle) Operates with subsystem clock 114 122 125
µ
s
TI0 input frequency fTI VDD = 2.7 to 5.5 V 0 1.0 MHz
0275 kHz
TI0 high-, low-level tTIH, tTIL VDD = 2.7 to 5.5 V 0.48
µ
s
widths 1.8
µ
s
Interrupt input high-, tINTH,INT0 IM02 = 0 Note 2
µ
s
low-level widths tINTL IM02 = 1 10
µ
s
INT1, 2, 4 10
µ
s
KR0-KR7 10
µ
s
RESET low-level width
tRSL 10
µ
s
Notes 1. The cycle time of the CPU clock (Φ) is determined by the oscillation frequency of the connected resonator
(and external clock), the system clock control register (SCC), and processor clock control register (PCC).
The figure on the right shows the supply voltage VDD vs. cycle time tCY characteristics when the device
operates with the main system clock.
2. 2tCY or 128/fX depending on the setting of the interrupt mode register (IM0).
with external
clock
with ceramic
oscillator or
crystal resonator
Operates with
main system
clock
0.5 0
Supply voltage V
DD
[V]
Cycle time t
CY
( s)
12 3456
1
2
3
4
5
6
60
64
(with main system clock)
t
CY
vs V
DD
µ
0.95
0.85
0.67
1.8 2.2 2.7
5.5
Operation guaranteed range
Remark Shaded area indicates o
p
eration when external clock is used.
µ
PD75P0016
38 Data Sheet U10328EJ3V3DS
Serial Transfer Operation
2-wire and 3-wire serial I/O modes (SCK ··· internal clock output): (TA = –40 to +85°C, VDD = 2.2 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY1 VDD = 2.7 to 5.5 V 1300 ns
3800 ns
SCK high-, low-level widths tKL1,VDD = 2.7 to 5.5 V
tKCY1/2–50
ns
tKH1
tKCY1/2–150
ns
SINote 1 setup time tSIK1 VDD = 2.7 to 5.5 V 150 ns
(vs. SCK )500 ns
SINote 1 hold time tKSI1 VDD = 2.7 to 5.5 V 400 ns
(vs. SCK )600 ns
SCK SONote 1 output tKSO1 RL = 1 kNote 2 VDD = 2.7 to 5.5 V 0 250 ns
delay time CL = 100 pF 0 1000 ns
Notes 1. Read as SB0 or SB1 when using the 2-wire serial I/O mode.
2. RL and CL respectively indicate the load resistance and load capacitance of the SO output line.
2-wire and 3-wire serial I/O modes (SCK ··· external clock input): (TA = –40 to +85°C, VDD = 2.2 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY2 VDD = 2.7 to 5.5 V 800 ns
3200 ns
SCK high-, low-level widths tKL2,VDD = 2.7 to 5.5 V 400 ns
tKH2 1600 ns
SINote 1 setup time tSIK2 VDD = 2.7 to 5.5 V 100 ns
(vs. SCK )150 ns
SINote 1 hold time tKSI2 VDD = 2.7 to 5.5 V 400 ns
(vs. SCK )600 ns
SCK SONote 1 output tKSO2 RL = 1 k Note 2 VDD = 2.7 to 5.5 V 0 300 ns
delay time CL = 100 pF 0 1000 ns
Notes 1. Read as SB0 or SB1 when using the 2-wire serial I/O mode.
2. RL and CL respectively indicate the load resistance and load capacitance of the SO output line.
µ
PD75P0016
39
Data Sheet U10328EJ3V3DS
SBI mode (SCK ··· internal clock output (master)): (TA = –40 to +85°C, VDD = 2.2 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY3 VDD = 2.7 to 5.5 V 1300 ns
3800 ns
SCK high-, low-level widths tKL3 VDD = 2.7 to 5.5 V
tKCY3/2–50
ns
tKH3
tKCY3/2–150
ns
SB0, 1 setup time tSIK3 VDD = 2.7 to 5.5 V 150 ns
(vs. SCK )500 ns
SB0, 1 hold time (vs. SCK )tKSI3 tKCY3/2 ns
SCK SB0, 1 output tKSO3 RL = 1 k Note VDD = 2.7 to 5.5 V 0 250 ns
delay time CL = 100 pF 0 1000 ns
SCK ↑ → SB0, 1 tKSB tKCY3 ns
SB0, 1 ↓ → SCK tSBK tKCY3 ns
SB0, 1 low-level width tSBL tKCY3 ns
SB0, 1 high-level width tSBH tKCY3 ns
Note RL and CL respectively indicate the load resistance and load capacitance of the SB0 and 1 output lines.
SBI mode (SCK ··· external clock input (slave)): (TA = –40 to +85°C, VDD = 2.2 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY4 VDD = 2.7 to 5.5 V 800 ns
3200 ns
SCK high-, low-level widths tKL4 VDD = 2.7 to 5.5 V 400 ns
tKH4 1600 ns
SB0, 1 setup time tSIK4 VDD = 2.7 to 5.5 V 100 ns
(vs. SCK )150 ns
SB0, 1 hold time (vs. SCK )tKSI4 tKCY4/2 ns
SCK SB0, 1 output tKSO4 RL = 1 k Note VDD = 2.7 to 5.5 V 0 300 ns
delay time CL = 100 pF 0 1000 ns
SCK ↑ → SB0, 1 tKSB tKCY4 ns
SB0, 1 ↓ → SCK tSBK tKCY4 ns
SB0, 1 low-level width tSBL tKCY4 ns
SB0, 1 high-level width tSBH tKCY4 ns
Note RL and CL respectively indicate the load resistance and load capacitance of the SB0 and 1 output lines.
µ
PD75P0016
40 Data Sheet U10328EJ3V3DS
V
IH
(MIN.)
V
IL
(MAX.)
V
IH
(MIN.)
V
IL
(MAX.)
V
OH
(MIN.)
V
OL
(MAX.)
V
OH
(MIN.)
V
OL
(MAX.)
AC Timing Test Points (except X1 and XT1 inputs)
Clock timing
TI0 timing
1/f
TI
t
TIL
t
TIH
TI0
1/f
X
t
XL
t
XH
V
DD
– 0.1 V
0.1 V
X1 input
1/f
XT
t
XTL
t
XTH
V
DD
– 0.1 V
0.1 V
XT1 input
µ
PD75P0016
41
Data Sheet U10328EJ3V3DS
Serial Transfer Timing
3-wire serial I/O mode
2-wire serial I/O mode
SCK
SB0, 1
tKCY1, 2
tKL1, 2 tKH1, 2
tKSO1, 2
tSIK1, 2 tKSI1, 2
t
KCY1, 2
SCK
Output data
SO
Input data
SI
t
SIK1, 2
t
KSO1, 2
t
KL1, 2
t
KH1, 2
t
KSI1, 2
µ
PD75P0016
42 Data Sheet U10328EJ3V3DS
Serial Transfer Timing
Bus release signal transfer
Command signal transfer
Interrupt input timing
RESET input timing
SCK
SB0, 1
tKCY3, 4
tSIK3, 4
tKSO3, 4
tKSI3, 4tSBKtSBHtSBLtKSB
tKH3, 4tKL3, 4
SCK
SB0, 1
tKCY3, 4
tSIK3, 4
tKSO3, 4
tKL3, 4 tKH3, 4
tKSI3, 4tSBKtKSB
INT0, 1, 2, 4
KR0-7
t
INTL
t
INTH
RESET
tRSL
µ
PD75P0016
43
Data Sheet U10328EJ3V3DS
STOP mode
Data retention mode
Internal reset operation
Operation mode
STOP instruction execution
HALT mode
VDD
RESET
tWAIT
tSREL
STOP mode
Data retention mode
Operation mode
HALT mode
t
SREL
t
WAIT
STOP instruction execution
V
DD
Standby release signal
(interrupt request)
Data Retention Characteristics of Data Memory in STOP Mode and at Low Supply Voltage
(TA = –40 to +85˚C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Release signal setup time tSREL 0
µ
s
Oscillation stabilization tWAIT Released by RESET 215/fxms
wait time Note 1 Released by interrupt request Note 2 ms
Notes 1. The oscillation stabilization wait time is the time during which the CPU stops operating to prevent
unstable operation when oscillation is started.
2. Set by the basic interval timer mode register (BTM). (Refer to the table below.)
BTM3 BTM2 BTM1 BTM0 Wait Time
fx = 4.19 MHz fx = 6.0 MHz
–0002
20/fx (approx. 250 ms) 220/fx (approx. 175 ms)
–0112
17/fx (approx. 31.3 ms) 217/fx (approx. 21.8 ms)
–1012
15/fx (approx. 7.81 ms) 215/fx (approx. 5.46 ms)
–1112
13/fx (approx. 1.95 ms) 213/fx (approx. 1.37 ms)
Data retention timing (when STOP mode released by RESET)
Data retention timing (standby release signal: when STOP mode released by interrupt signal)
µ
PD75P0016
44 Data Sheet U10328EJ3V3DS
DC Programming Characteristics (TA = 25 ± 5°C, VDD = 6.0 ± 0.25 V, VPP = 12.5 ± 0.3 V, VSS = 0V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input voltage, high VIH1 Other than X1, X2 pins 0.7 VDD VDD V
VIH2 X1, X2
VDD – 0.5
VDD V
Input voltage, low VIL1 Other than X1, X2 pins 0 0.3 VDD V
VIL2 X1, X2 0 0.4 V
Input leakage current ILI VIN = VIL or VIH 10
µ
A
Output voltage, high VOH IOH = – 1 mA
VDD – 1.0
V
Output voltage, low VOL IOL = 1.6 mA 0.4 V
VDD supply current IDD 30 mA
VPP supply current IPP MD0 = VIL, MD1 = VIH 30 mA
Cautions 1. Keep VPP to within +13.5 V, including overshoot.
2. Apply VDD before VPP and turn it off after VPP.
AC Programming Characteristics (TA = 25 ± 5°C, VDD = 6.0 ± 0.25 V, VPP = 12.5 ± 0.3 V, VSS = 0 V)
Parameter Symbol Note 1 Conditions MIN. TYP. MAX. Unit
Address setup time Note 2 tAS tAS 2
µ
s
(vs. MD0 )
MD1 setup time (vs. MD0 )tM1S tOES 2
µ
s
Data setup time (vs. MD0 )tDS tDS 2
µ
s
Address hold time Note 2 tAH tAH 2
µ
s
(vs. MD0 )
Data hold time (vs. MD0 )tDH tDH 2
µ
s
MD0 ↑ → data output float tDF tDF 0130 ns
delay time
VPP setup time (vs. MD3 )tVPS tVPS 2
µ
s
VDD setup time (vs. MD3 )tVDS tVCS 2
µ
s
Initial program pulse width tPW tPW 0.95 1.0 1.05 ms
Additional program pulse width
tOPW tOPW 0.95 21.0 ms
MD0 setup time (vs. MD1 )tM0S tCES 2
µ
s
MD0 ↓ → data output delay time
tDV tDV MD0 = MD1 = VIL 1
µ
s
MD1 hold time (vs. MD0 )tM1H tOEH tM1H + tM1R 50
µ
s2
µ
s
MD1 recovery time (vs. MD0 )
tM1R tOR 2
µ
s
Program counter reset time tPCR —10
µ
s
X1 input high-, low-level width
tXH, tXL 0.125
µ
s
X1 input frequency fX—4.19 MHz
Initial mode set time t1—2
µ
s
MD3 setup time (vs. MD1 )tM3S —2
µ
s
MD3 hold time (vs. MD1 )tM3H —2
µ
s
MD3 setup time (vs. MD0 )tM3SR When program memory is read 2
µ
s
Address Note 2 data output tDAD tACC When program memory is read 2
µ
s
delay time
Address Note 2 data output tHAD tOH When program memory is read 0 130 ns
hold time
MD3 hold time (vs. MD0 )tM3HR When program memory is read 2
µ
s
MD3 ↓ → data output float tDFR When program memory is read 2
µ
s
delay time
Notes 1. Symbol of corresponding
µ
PD27C256A
2. The internal address signal is incremented by one at the rising edge of the fourth X1 input and is not
connected to a pin.
µ
PD75P0016
45
Data Sheet U10328EJ3V3DS
V
PP
V
DD
V
DD
+1
V
DD
X1
D0/P40-D3/P43
D4/P50-D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
V
DD
V
PP
Data output
t
VPS
t
VDS
t
XH
t
XL
t
DAD
t
HAD
t
DV
t
DFR
t
M3HR
t
I
t
PCR
t
M3SR
Data output
V
PP
V
DD
V
DD
+1
V
DD
X1
D0/P40-D3/P43
D4/P50-D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
V
PP
V
DD
Data input
t
VPS
t
VDS
t
XH
t
XL
t
I
t
DS
t
DH
t
PW
t
DV
t
DF
t
M1R
t
M0S
t
DS
t
DH
t
OPW
t
AH
t
AS
t
M1S
t
M1H
t
PCR
tM3S
t
M3H
Data input Data input
Data output
Program Memory Write Timing
Program Memory Read Timing
µ
PD75P0016
46 Data Sheet U10328EJ3V3DS
10. CHARACTERISTICS CURVES (REFERENCE VALUE)
10
5.0
1.0
0.5
0.1
0.05
0.01
0.005
0.00101234
Su
pp
l
y
Volta
g
e V
DD
(
V
)
I
DD
vs V
DD
(Main system clock : 6.0 MHz crystal resonator)
Supply Current I
DD
(mA)
5678
PCC = 0011
PCC = 0010
PCC = 0001
PCC = 0000
Main system clock HALT mode
+32-kHz oscillation
Subsystem clock operation mode
(SOS.1 = 0)
Subsystem clock HALT mode
(SOS.1 = 0) and main system
clock STOP mode +32-kHz
oscillation (SOS.1 = 0)
Subsystem clock HALT mode
(SOS.1 = 1) and main system
clock STOP mode +32-kHz
oscillation (SOS.1 = 1)
X1
Crystal resonator
6.0 MHz
Crystal resonator
32.768 kHz
X2 XT1
330 k
22 pF22 pF22 pF 22 pF
XT2
(T
A
= 25°C)
µ
PD75P0016
47
Data Sheet U10328EJ3V3DS
10
5.0
1.0
0.5
0.1
0.05
0.01
0.005
0.001012345678
PCC = 0011
PCC = 0010
PCC = 0001
PCC = 0000
X1 X2 XT1
330 k
22 pF22 pF22 pF 22 pF
XT2
Supply Voltage V
DD
(V)
I
DD
vs V
DD
(Main system clock : 4.19 MHz crystal resonator)
Supply Current I
DD
(mA)
Main system clock HALT mode
+32-kHz oscillation
Subsystem clock operation mode
(SOS.1 = 0)
Subsystem clock HALT mode
(SOS.1 = 0) and main system
clock STOP mode +32-kHz
oscillation (SOS.1 = 0)
Subsystem clock HALT mode
(SOS.1 = 1) and main system
clock STOP mode +32-kHz
oscillation (SOS.1 = 1)
Crystal resonator
4.19 MHz
Crystal resonator
32.768 kHz
(T
A
= 25°C)
µ
PD75P0016
48 Data Sheet U10328EJ3V3DS
11. PACKAGE DRAWINGS
42PIN PLASTIC SHRINK DIP (600 mil)
ITEM MILLIMETERS INCHES
A
B
C
F
G
H
I
J
K
39.13 MAX.
1.778 (T.P.)
3.2±0.3
0.51 MIN.
4.31 MAX.
1.78 MAX.
0.17
15.24 (T.P.)
5.08 MAX.
N
0.9 MIN.
R
1.541 MAX.
0.070 MAX.
0.035 MIN.
0.126±0.012
0.020 MIN.
0.170 MAX.
0.200 MAX.
0.600 (T.P.)
0.007
0.070 (T.P.)
P42C-70-600A-1
A
C
D
G
NOTES
1) Each lead centerline is located within 0.17 mm (0.007 inch) of
its true position (T.P.) at maximum material condition.
D0.50±0.10 0.020
M 0.25 0.010
+0.10
–0.05
0~15° 0~15°
+0.004
–0.003
+0.004
–0.005
M
K
N
L13.2 0.520
2) Item "K" to center of leads when formed parallel.
42
1
22
21
L
MR
B
F
H
J
I
µ
PD75P0016
49
Data Sheet U10328EJ3V3DS
44 PIN PLASTIC QFP ( 10)
S44GB-80-3BS
ITEM MILLIMETERS INCHES
N
P
Q0.125±0.075
0.10
2.7
0.004
0.106
0.005±0.003
NOTE
Each lead centerline is located within 0.16 mm (0.007 inch) of
its true position (T.P.) at maximum material condition.
J
I
H
N
A13.2±0.2 0.520+0.008
–0.009
B10.0±0.2 0.394+0.008
–0.009
C10.0±0.2 0.394+0.008
–0.009
D13.2±0.2 0.520+0.008
–0.009
F
G
H
1.0
0.37
1.0 0.039
0.039
0.015+0.003
–0.004
I
J
K
0.8 (T.P.)
1.6±0.2
0.16 0.007
0.031 (T.P.)
0.063±0.008
L0.8±0.2 0.031+0.009
–0.008
M0.17 0.007+0.002
–0.003
S3.0 MAX. 0.119 MAX.
R3°3°+7°
–3°
+0.08
–0.07
+0.06
–0.05
+7°
–3°
detail of lead end
Q
F
G
K
M
L
R
M
33
34 22
44
112
11
23
S
P
CD
A
B
µ
PD75P0016
50 Data Sheet U10328EJ3V3DS
12. RECOMMENDED SOLDERING CONDITIONS
The
µ
PD75P0016 should be soldered and mounted under the following recommended conditions.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Table 12-1. Surface Mounting Type Soldering Conditions
(1)
µ
PD75P0016GB-3BS-MTX: 44-pin plastic QFP (10 × 10 mm, 0.8 mm pitch)
Recommended
Soldering method Soldering conditions Condition
Symbol
Infrared reflow Package peak temperature: 235˚C, Time: 30 seconds max. IR35-00-3
(at 210˚C or higher), Count: Three times or less
VPS Package peak temperature: 215˚C, Time: 40 seconds max. VP15-00-3
(at 200˚C or higher), Count: Three times or less
Wave soldering Solder bath temperature: 260˚C max., Time: 10 seconds max., Count: Once WS60-00-1
Preheating temperature: 120˚C max. (package surface temperature)
Partial heating Pin temperature: 350˚C max., Time: 3 seconds max. (per pin row)
Caution Do not use different soldering methods together (except for partial heating).
Remark For soldering methods and conditions other than those recommended above, contact an NEC Electronics sales
representative.
(2)
µ
PD75P0016GB-3BS-MTX-A: 44-pin plastic QFP (10 × 10 mm, 0.8 mm pitch)
Recommended
Soldering method Soldering conditions Condition
Symbol
Infrared reflow Package peak temperature: 260˚C, Time: 60 seconds max. IR60-207-3
(at 220˚C or higher), Count: Three times or less,
Exposure limit: 7 daysNote (after that, prebake at 125˚C for 20 to 72 hours)
Wave soldering For details, contact an NEC Electronics sales representative.
Partial heating Pin temperature: 350˚C max., Time: 3 seconds max. (per pin row)
Note After opening the dry pack, store it at 25˚C or less and 65% RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
Remarks 1. Products with “-A” at the end of the part number are lead-free products.
2. For soldering methods and conditions other than those recommended above, contact an NEC Electronics
sales representative.
µ
PD75P0016
51
Data Sheet U10328EJ3V3DS
Table 12-2. Insertion Type Soldering Conditions
µ
PD75P0016CU: 42-pin plastic shrink DIP (600 mil, 1.778 mm pitch)
µ
PD75P0016CU-A: 42-pin plastic shrink DIP (600 mil, 1.778 mm pitch)
Soldering Method Soldering Conditions
Wave soldering (pin only) Solder bath temperature: 260˚C max., Time: 10 seconds max.
Partial heating Pin temperature: 300˚C max., Time: 3 seconds max. (for each pin)
Caution Apply wave soldering to pins only. See to it that the jet solder does not contact with the chip
directly.
Remarks 1. Products with “-A” at the end of the part number are lead-free products.
2. For soldering methods and conditions other than those recommended above, contact an NEC
Electronics sales representative.
µ
PD75P0016
52 Data Sheet U10328EJ3V3DS
APPENDIX A. FUNCTION LIST OF
µ
PD75008, 750008, 75P0016
(1/2)
Item
µ
PD75008
µ
PD750008
µ
PD75P0016
Program memory Mask ROM Mask ROM One-time PROM
0000H - 1F7FH 0000H - 1FFFH 0000H - 3FFFH
(8064 × 8 bits) (8192 × 8 bits) (16384 × 8 bits)
Data memory 000H - 1FFH
(512 × 4 bits)
CPU 75X Standard CPU 75XL CPU
General register 4 bits × 8 or 8 bits × 4 (4 bits × 8 or 8 bits × 4) × 4 banks
Instruction When main system • 0.95, 1.91, 15.3
µ
s• 0.95, 1.91, 3.81, 15.3
µ
s (at 4.19 MHz operation)
execution clock is selected (at 4.19 MHz operation) • 0.67, 1.33, 2.67, 10.7
µ
s (at 6.0 MHz operation)
time When subsystem 122
µ
s (at 32.768 kHz operation)
clock is selected
Stack SBS register None Yes SBS.3 = 1: Mk I mode selected
SBS.3 = 0: Mk II mode selected
Stack area 000H - 0FFH n00H - nFFH (n = 0, 1)
Stack operation of 2-byte stack In Mk I mode: 2-byte stack
subroutine call In Mk II mode: 3-byte stack
instruction
Instructions BRA !addr1 Unusable In Mk I mode: Unusable
CALLA !addr1 In Mk II mode: Usable
MOVT XA, @BCDE Usable
MOVT XA, @BCXA
BR BCDE
BR BCXA
CALL !addr 3 machine cycles Mk I mode: 3 machine cycles
Mk II mode: 4 machine cycles
CALLF !faddr 2 machine cycles Mk I mode: 2 machine cycles
Mk II mode: 3 machine cycles
Timer 3 channels 4 channels
• Basic interval timer: • Basic interval timer/watchdog timer: 1 channel
1 channel • 8-bit timer/event counter: 1 channel
• 8-bit timer/event counter: • 8-bit timer counter: 1 channel
1 channel • Watch timer: 1 channel
• Watch timer: 1 channel
Clock output (PCL) Φ, 524, 262, 65.5 kHz Φ, 524, 262, 65.5 kHz
(main system clock: (main system clock: at 4.19 MHz operation)
at 4.19 MHz operation) Φ, 750, 375, 93.8 kHz
(main system clock: at 6.0 MHz operation)
BUZ output (BUZ) • 2 kHz • 2, 4, 32 kHz
(main system clock: at 4.19 MHz operation)
• 2.93, 5.86, 46.9 kHz
(main system clock: at 6.0 MHz operation)
µ
PD75P0016
53
Data Sheet U10328EJ3V3DS
(2/2)
Item
µ
PD75008
µ
PD750008
µ
PD75P0016
Serial interface Compatible with 3 kinds of mode
• 3-wire serial I/O mode ... MSB/LSB-first can be switched
• 2-wire serial I/O mode
• SBI mode
SOS register Feedback resistor On-chip feedback resistor On chip
cut flag (SOS.0) specifiable by mask option
Sub oscillator current None On chip
cut flag (SOS.1)
Register bank selection register None Yes
(RBS)
Standby release by INT0 Not possible Possible
Vectored interrupt External: 3 Internal: 3 External: 3 Internal: 4
Processor clock control register PCC = 0, 2, 3 can be used PCC = 0 to 3 can be used
(PCC)
Supply voltage VDD = 2.7 to 6.0 V VDD = 2.2 to 5.5 V
Operating ambient temperature TA = –40 to +85˚C
Package • 42-pin plastic shrink DIP (600 mil, 1.778-mm pitch)
• 44-pin plastic QFP (10 × 10 mm, 0.8-mm pitch)
µ
PD75P0016
54 Data Sheet U10328EJ3V3DS
APPENDIX B. DEVELOPMENT TOOLS
The following development tools are provided for system development using the
µ
PD75P0016. The 75XL series uses
a common relocatable assembler, in combination with a device file matching each machine.
RA75X relocatable assembler Host machine Part number
OS Supply medium (product name)
PC-9800 series MS-DOSTM 3.5" 2HD
µ
S5A13RA75X
Ver.3.30 to
Ver.6.2
Note
IBM PC/ATTM Refer to OS for 3.5" 2HC
µ
S7B13RA75X
or compatible IBM PCs
Device file Host machine Part number
OS Supply medium (product name)
PC-9800 series MS-DOS 3.5" 2HD
µ
S5A13DF750008
Ver.3.30 to
Ver.6.2
Note
IBM PC/AT Refer to OS for 3.5" 2HC
µ
S7B13DF750008
or compatible IBM PCs
Note Ver. 5.00 and the upper versions of Ver. 5.00 are provided with a task swap function, but it does not work with this
software.
Remark The operation of the assembler and device file is guaranteed only on the above host machines and OSs.
µ
PD75P0016
55
Data Sheet U10328EJ3V3DS
PROM Write Tools
Hardware PG-1500 A stand-alone system can be configured of a single-chip microcomputer with on-chip PROM
when connected to an auxiliary board (companion product) and a programmer adapter
(separately sold). Alternatively, a PROM programmer can be operated on a host machine for
programming.
In addition, typical PROMs in capacities ranging from 256 K to 4 M bits can be programmed.
PA-75P008CU This is a PROM programmer adapter for the
µ
PD75P0016CU/GB. It can be used when
connected to a PG-1500.
PA-75P0016GB This is a PROM programmer adapter for the
µ
PD75P0016GB-3BS-MTX. It can be used when
connected to a PG-1500.
Software PG-1500 controller Establishes serial and parallel connections between the PG-1500 and a host machine for host-
machine control of the PG-1500.
Host machine Part number
OS Supply medium (product name)
PC-9800 Series MS-DOS 3.5" 2HD
µ
S5A13PG1500
Ver.3.30 to
Ver.6.2
Note
IBM PC/AT Refer to OS for 3.5" 2HD
µ
S7B13PG1500
or compatible IBM PCs
Note Ver. 5.00 and the upper versions of Ver. 5.00 are provided with a task swapping function, but it does not work with
this software.
Remark Operation of the PG-1500 controller is guaranteed only on the above host machine and OSs.
µ
PD75P0016
56 Data Sheet U10328EJ3V3DS
Debugging Tools
In-circuit emulators (IE-75000-R and IE-75001-R) are provided as program debugging tools for the
µ
PD75P0016.
Various system configurations using these in-circuit emulators are listed below.
Hardware IE-75000-RNote 1 The IE-75000-R is an in-circuit emulator to be used for hardware and software debugging during
development of application systems that use 75X or 75XL Series products. For development
of the
µ
PD750008 subseries, the IE-75000-R is used with a separately sold emulation board IE-
75300-R-EM and emulation probe EP-75008CU-R or EP-75008GB-R.
These products can be applied for highly efficient debugging when connected to a host machine
and PROM programmer.
The IE-75000-R can include a connected emulation board (IE-75000-R-EM).
IE-75001-R The IE-75001-R is an in-circuit emulator to be used for hardware and software debugging during
development of application systems that use 75X or 75XL Series products. The IE-75001-R is
used with a separately sold emulation board (IE-75300-R-EM) and emulation probe EP-
75008CU-R or EP-75008GB-R.
These products can be applied for highly efficient debugging when connected to a host machine
and PROM programmer.
IE-75300-R-EM This is an emulation board for evaluating application systems that use the
µ
PD750008
subseries. It is used in combination with the IE-75000-R or IE-75001-R in-circuit emulator.
EP-75008CU-R This is an emulation probe for the
µ
PD75P0016CU.
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
EP-75008GB-R This is an emulation probe for the
µ
PD75P0016GB.
EV-9200G-44 When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
It includes a 44-pin conversion socket (EV-9200G-44) to facilitate connections with various
target systems.
Software IE control program This program can control the IE-75000-R or IE-75001-R on a host machine when connected to
the IE-75000-R or IE-75001-R via an RS-232-C or Centronics I/F.
Host machine Part number
OS Supply medium (product name)
PC-9800 series MS-DOS 3.5" 2HD
µ
S5A13IE75X
Ver.3.30 to
Ver.6.2
Note 2
IBM PC/AT Refer to OS for 3.5" 2HC
µ
S7B13IE75X
or compatible IBM PCs
Notes 1. This is a service part provided for maintenance purpose only.
2. Ver. 5.00 and the upper versions of Ver. 5.00 are provided with a task swapping function, but it does not work
with this software.
Remarks 1. Operation of the IE control program is guaranteed only on the above host machine and OSs.
2. The
µ
PD75000 subseries consists of the
µ
PD750004, 750006, 750008 and 75P00016.
µ
PD75P0016
57
Data Sheet U10328EJ3V3DS
OS for IBM PCs
The following operating systems for the IBM PC are supported.
OS Version
PC DOSTM Ver.3.1 to Ver.6.3
J6.1/VNote to J6.3/VNote
MS-DOS Ver.5.0 to Ver.6.22
5.0/VNote to J6.2/VNote
IBM DOSTM J5.02/VNote
Note Supports English version only.
Caution Ver 5.0 and above include a task swapping function, but this software is not able to use that function.
µ
PD75P0016
58 Data Sheet U10328EJ3V3DS
Hardware
Software
APPENDIX C. RELATED DOCUMENTS
Some of the following related documents are preliminary. This document, however, is not indicated as
preliminary.
Device Related Documents
Document name Document No.
Japanese English
µ
PD750004, 750006, 750008, 750004(A), 750006(A), 750008(A) U10738J U10738E
Data Sheet
µ
PD75P0016 Data Sheet U10328J This document
µ
PD750008 User’s Manual U10740J U10740E
µ
PD750008, 750108 Instruction List U11456J
75XL Series Selection Guide U10453J U10453E
Development Tool Related Documents
Document name Document No.
Japanese English
IE-75000 R/IE-75001-R User’s Manual EEU-846 EEU-1416
IE-75300-R-EM User’s Manual U11354J U11354E
EP-750008CU-R User’s Manual EEU-699 EEU-1317
EP-750008GB-R User’s Manual EEU-698 EEU-1305
PG-1500 User’s Manual U11940J U11940E
RA75X Assembler Package Operation U12622J U12622E
User’s Manual Language U12385J U12385E
PG-1500 Controller User’s Manual PC-9800 Series EEU-704 EEU-1291
(MS-DOS) Base
IBM PC Series EEU-5008 U10540E
(PC DOS) Base
Other Documents
Document name Document No.
Japanese English
SEMICONDUCTOR SELECTION GUIDE Products & Package (CD-ROM)
X13769X
Semiconductor Device Mounting Technology Manual C10535J C10535E
Quality Grades on NEC Semiconductor Devices C11531J C11531E
NEC Semiconductor Device Reliability/Quality Control System C10983J C10983E
Guide to Prevent Damage for Semiconductor Devices Electrostatic C11892J C11892E
Discharge (ESD)
Guide for Products Related to Microcomputer : Other Companies C11416J
Caution The above related documents are subject to change without notice. For design purpose, etc.,
be sure to use the latest documents.
µ
PD75P0016
59
Data Sheet U10328EJ3V3DS
1
2
3
4
VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
CMOS device stays in the area between V
IL
(MAX) and V
IH
(MIN) due to noise, etc., the device may
malfunction. Take care to prevent chattering noise from entering the device when the input level is
fixed, and also in the transition period when the input level passes through the area between V
IL
(MAX)
and V
IH
(MIN).
HANDLING OF UNUSED INPUT PINS
Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is
possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to V
DD
or
GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins
must be judged separately for each device and according to related specifications governing the device.
PRECAUTION AGAINST ESD
A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it when it has occurred. Environmental control must be
adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that
easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work
benches and floors should be grounded. The operator should be grounded using a wrist strap.
Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for
PW boards with mounted semiconductor devices.
STATUS BEFORE INITIALIZATION
Power-on does not necessarily define the initial status of a MOS device. Immediately after the power
source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does
not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the
reset signal is received. A reset operation must be executed immediately after power-on for devices
with reset functions.
POWER ON/OFF SEQUENCE
In the case of a device that uses different power supplies for the internal operation and external
interface, as a rule, switch on the external power supply after switching on the internal power supply.
When switching the power supply off, as a rule, switch off the external power supply and then the
internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal
elements due to the passage of an abnormal current.
The correct power on/off sequence must be judged separately for each device and according to related
specifications governing the device.
INPUT OF SIGNAL DURING POWER OFF STATE
Do not input signals or an I/O pull-up power supply while the device is not powered. The current
injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and
the abnormal current that passes in the device at this time may cause degradation of internal elements.
Input of signals during the power off state must be judged separately for each device and according to
related specifications governing the device.
NOTES FOR CMOS DEVICES
5
6
µ
PD75P0016
60 Data Sheet U10328EJ3V3DS
Regional Information
Device availability
Ordering information
Product release schedule
Availability of related technical literature
Development environment specifications (for example, specifications for third-party tools and
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Network requirements
In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary
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µ
PD75P0016
QTOP is a trademark of NEC Corporation.
MS-DOS is either a registered trademark or a trademark of Microsoft Corporation in the United States
and/or other countries.
IBM DOS, PC/AT, and PC DOS are trademarks of International Business Machines Corporation.
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M8E 02. 11-1
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