112 Optoisolators QUICK REFERENCE CHART MIN. MIN. MIN. OUTPUT CURRENT DC VOLTAGE TYPICAL PACKAGE TRANSFER ISOLATION RATING BANDWIDTH OUTPUT FORMAT PRODUCT KEY PACKAGE TYPE RATIO VOLTAGE (BYCEO) R, = 1002 TRANSISTOR MCT2 A 6 LEAD PLASTIC DIP 20% 1500 V 30V 150 kHz TRANSISTOR MCT2E A 6 LEAD PLASTIC DIP 20% 2500 V 30V 150 kHz TRANSISTOR MCT210 A 6 LEAD PLASTIC DIP 150% 4000 V 30V 150 kHz TRANSISTOR MCT26 A 6 LEAD PLASTIC DIP 6% 1500 V 30V 150 kHz TRANSISTOR MCT4 Cc TO-46 METAL CAN 15% 1000 V 30V 150 kHz TRANSISTOR MCT4R* Cc TO-46 METAL CAN 15% 1000 V 30V 150 kHz TRANSISTOR MCT6 B 8 LEAD PLASTIC DIP 20% 1500 V 30V 150 kHz DUAL CHANNEL TRANSISTOR MCT66 B 8 LEAD PLASTIC DIP 6% 1500 V 30V 150 kHz DUAL CHANNEL , TRANSISTOR 4N25 F 6 LEAD PLASTIC DIP 20% 2500 V 30V 300 kHz TRANSISTOR 4N26 F 6 LEAD PLASTIC DIP 20% 1500 V 30V 300 kHz TRANSISTOR 4N27 F 6 LEAD PLASTIC DIP 10% 1500 V 30V 300 kHz TRANSISTOR 4N28 F 6 LEAD PLASTIC DIP 10% 500 V 30V 300 kHz TRANSISTOR 4N35 F 6 LEAD PLASTIC DIP 100% 3550 V 30V 150 kHz TRANSISTOR 4N36 F 6 LEAD PLASTIC DIP 100% 2500 V 30V 150 kHz TRANSISTOR 4N37 F 6 LEAD PLASTIC DIP 100% 1500 V 30V 150 kHz DARLINGTON TRANS. MCA230 A 6 LEAD PLASTIC DIP 100% 1500 V 30V 10 kHz DARLINGTON TRANS. MCA231 A 6 LEAD PLASTIC DIP 200% 1500 V 30V 10 kHz DARLINGTON TRANS. MCA255 A 6 LEAD PLASTIC DIP 100% 1500 V 55V 10 kHz DARLINGTON TRANS. 4N29 F 6 LEAD PLASTIC DIP 100% 2500 V 30V 30 kHz DARLINGTON TRANS. 4N30 F 6 LEAD PLASTIC DIP 100% 1500 V 30V 30 kHz DARLINGTON TRANS. 4N31 F 6 LEAD PLASTIC DIP 50% 1500 V 30V 30 kHz DARLINGTON TRANS. 4N32 F 6 LEAD PLASTIC DIP 500% 2500 V 30V 30 kHz DARLINGTON TRANS. 4N33 F 6 LEAD PLASTIC DIP 500% 1500 V 30V 30 kHz *Reliability conditioned to MIL-STD-883, Method 5005/B, 100% pre-conditioning. FORWARD MAX. pc BLOCKING TURN-ON PACKAGE ISOLATION VOLTAGE CURRENT OUTPUT FORMAT PRODUCT KEY PACKAGE TYPE VOLTAGE (VDRRM) (Ip) SCR MCS2 A 6 LEAD PLASTIC DIP 1500 V 200 V 14.0 mA SCR MCS2400 A 6 LEAD PLASTIC DIP 1500 V 400 V 14.0mA 2 SCRs (CONNECTED ANODE TO CATHODE) MCS6200 B 8 LEAD PLASTIC DIP 1500 V 200 V 14.0mA 2 SCRs (CONNECTED ANODE TO CATHODE) McCS6201 B 8 LEAD PLASTIC DIP 2500 V 200 V 14.0 mA MIN. MIN. DC BINARY MAX. TYP. OUTPUT PACKAGE ISOLATION DATA RATE TRIGGER HYSTERESIS FORMAT PRODUCT KEY PACKAGE TYPE VOLTAGE (BDR) (Ip) (Alp) LOGIC GATE MCL601 B 8 LEAD PLASTIC DIP 2000 V 0.10 MHz 5.0mA 1.0 mA OPEN COLLECTOR LOGIC GATE MCL611 B 8 LEAD PLASTIC DIP 2000 V 1.0 MHz 15.0mA 5.0 mA OPEN COLLECTOR (TOTEM POLE OUTPUT MCL600 & MCL610 available February, 1977.) MAX. OUTPUT PACKAGE PACKAGE COLLECTOR TYPICAL DARK CURRENT FORMAT PRODUCT KEY TYPE CURRENT (Ic) BANDWIDTH (IcEo) TRANSISTOR MCT8 E rene LIMIT 200 uA @If= 20 mA, VcE=10V 150 kHz 100 nA TRANSISTOR MCT81 E etn LIMIT 50 uA @ Ip = 20 mA, Vox =10V 200 kHz 100 nA IT DARLINGTON MCA7 D REFLECTIVE 50 uA @Ip=50 mA, VCR =5 V 0.8 kHz 100 nA SENSOR SWITCH DARLINGTON MCA8 E Sach LIMIT 2mA @Ip=16mA, Vcp=1V 0.8 kHz 100 nA WITCH DARLINGTON MCA81 E SLOTTED LIMIT 1.6 mA @Ip= 50 mA, Vof=1V 1.5 kHz 100 nA SWITCHPHOTO- 4N29 4N32 DARLINGTON 4N30 4N33 Monsanto OPTO-ISOLATOR | 4N31 PRODUCT DESCRIPTION The 4N29, 4N30, 4N31, 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photo-darlington. Each unit is sealed in a 6-lead plastic DIP package. PACKAGE DIMENSIONS FEATURES & APPLICATIONS = Fast operate time 10 us J | High isolation resistance 104 2 SQ [og [v.| A High dielectric strength, input to output { 2500 V min. 4N29, 4N32; 1500 V min. 4N30, |S om __ 4N31, 4N33 fy fy fy = Low coupling capacitance 1.0 pF s Convenient package plastic dual-in-line = Long lifetime, solid state reliability it = Low weight 0.4 grams ff TT M | 8 |- i | seating aa Hf MILLIMETERS INCHES PLANE to DIM. MIN. MAX. MIN. MAX. A 8.38 8.89 0.330 0.385 B 1.40 1.65 0.055 0.065 ls F Cc 2.92 3.18 0.115 0.125 D 0.41 0.51 0.016 0.020 . I F 1.14 1.40 0.045 0.055 1 I G 2.54 Basic 0.100 Basic ANODE Tx cS) ease V4 Pot ay H 1.57 1.83 0.062 ~0.072 BY J 0.23 0.28 0.009 0.011 canoe @) courecton Fy | | | | | f| ok 2.54 3.30 | 0.100 0.130 { JK L 7.37 7.87 0.290 0.310 @ (4) EMITTER | M 5 _ 5 SEATING PLANE N _ 1.27 _ 0.050 C885 Lo ABSOLUTE MAXIMUM RATINGS 1, = 25C (Unless otherwise specified) *Storage Temperature 1... ee eee -55C to 150C *Operating Temperature at Junction ..... 0.0... 0 ees -55C to 100C *Lead Soldering time @ 260C 22... ee ee ee ee 10 seconds *Total power dissipation @ 25C ambient... 0... 0. ce ee ee eee ee eee 250 mW *Derate linearly from 25C 2. ee eee 3.3 mW/PC LED (GaAs Diode) DETECTOR (Silicon Photo Darlington Transistor) *Power dissipation @ 25C ambient ......... 150 mw *Power dissipation @ 25C ambient ......... 150 mW *Derate linearly from 55C ............. 2mw/Cc *Derate linearly from 25C ............ 2.0 mwW/?C *Continuous forward current .....-......6- 80 mA *Collector-emitter breakdown voltage (BVceg).... 30 V Reverse current .........2002202--0 000% 10mA *Collector-base breakdown voltage (BVcgo)...--- 50 V *Peak forward current (300 usec pulse, 330 pps) . .3.0 A Emitter-base breakdown voltage (BVego)...-...-- 8.0 V *Emitter-collector breakdown voltage (BVeco)-...--5V *Indicated JEDEC Registered data. 117us 4N29, 4N30, 4N31, 4N32, 4N33 CHARACTERISTIC SYMBOL LED CHARACTERISTICS (Ta = 25C unless otherwise noted) * Reverse leakage current Ip *Forward voltage Ve Capacitance Cc PHOTOTRANSISTOR CHARACTERISTICS (Ta = 25C and I; = Ounless otherwise noted) *Collector-emitter dark current IcEO *Collector-base breakdown voitage BVcgo *Collector-emitter breakdown voltage BVcEo *Emitter-collector breakdown voltage BVeEco DC current gain hee COUPLED CHARACTERISTICS (Ta = 25C unless otherwise noted) *Collector output current (1) 4N32, 4N33 Ic 4N29, 4N30 4N31 *isolation voltage (2) 4N29, 4N32 Viso 4N30, 4N31, 4N33 Isolation Resistance (2) Riso *Collector-emitter saturation voltage (1) VcE(SAT) 4N31 4N29, 4N30, 4N32, 4N33 lsolation capacitance (2) Bandwidth (3) (Test Circuit #1) SWITCHING CHARACTERISTICS (Test Circuit #2) Turn-on time (Note 3) ton Turn-off time (Note 3) 4N29, 4N30, 4N31 torr 4N32, 4N33 *tndicates JEDEC Registered Data. (1) Pulse test: pulse width = 300 us, duty cycle < 2.0% MIN. 30 30 5.0 2500 1500 TYP. 0.05 1.2 150 5000 1911 0.8 30 0.6 17 45 ELECTRO-OPTICAL CHARACTERISTICS (25C Free Air Temperature Unless Otherwise Specified) MAX. UNIT TEST CONDITION 100 UA Ve =3.0V 1.5 Volts tp =50mA pF Vp =OV, f= 1.0 MHz 100 nA Vee = 10V, base open Volts lc = 100WA, I_ = 0 Volts Ic = 100 WA, Ip = 0 Volts le = 100 BA, Ig = 0 Vee = 5.0V, Ie = 500 LA mA Vee = 10V, Ip = 10 mA, Ip = 0 mA Vee = 10V, Ip = 10 mA, Ig = 0 mA Vee = 10V, Ip = 10 mA, Ig = 0 VDC vbc Ohms V=500 VDC 1.2 Volts Ie = 2.0 mA, Ir = 8.0 MA 1.0 Volts I = 2.0 MA, Ir = 8.0 mA pF V=0, f= 1.0 MHz kHz 5.0 Us Ic = 50 mA, If = 200 mA, Vec = 10 Vv 40 us Ic = 50 MA, I- = 200 mA, 100 Vee =10V (2) For this test LED pins 1 and 2 are common and phototransistor pins 4, 5 and 6 are common. (3) tp adjusted to Ic = 2.0 MA and ic = 0.7 mA RMS. (4) tg and ty are inversely proportional to the amplitude of If; t, and t are not significantly affected by If. CONSTANT CURRENT INPUT MODULATION INPUT Ig(DC) = 2.0mA ic (AC SINE WAVE) = 0.7 mA RMS at IKHz Note 2 FREQUENCY RESPONSE TEST CIRCUIT #1 1088 QUTPUT | PHOTO DARLINGTON | TRANSISTOR Ic =50 mA NC {NOMINAL} Veo +10V PULSE v rer en 1800 INPUT D PULSE (4 OUTPUT | | | PHOTO DARLINGTON ILeD \ TRANSISTOR | | Is I al | - ~~ LLL 4 Ip = 200 mA ras, = 100s PULSE RATE - 100 pps 1099 SWITCHING TIME TEST CIRCUIT #24N29, 4N30, 4N31, 4N32, 4N33 110 APPLICATION INFORMATION LATCH T?L LOGIC ISOLATION To TAL TISN7413 SCHMITT TRIGGER 1101 el eR R2Voc -3.6V = GND 1100 NOT APPLICABLE TO 4N31 FORM C CONTACT TRIAC TRIGGER AC LOAD --- ee 7 Rs AC oT ! ( | - ee L he C1103 GNOo = NOT APPLICABLE TO 4N31 OPERATING A RELAY COIL Voc Vee < 55 V Veo <9 Ig < 125 mA R<8M2 Iq < 250 mA Ip < 50 mA "F< 1.6mA e le GE PA4g4 SCHMITT TRIGGER C1104 C1104120 4N29, 4N30, 4N31, 4N32, 4N33 TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25C Free Air Temperature Untess Otherwise Specified) Fig. 3. Dark Current vs. Temperature 14 | . NORMALIZED 16 313 Ig=0.5 mA 4 g 1 Voce =5V $ ] MAX 7 < .F / > T 88 CY LL ee) 12 | atl. oO > a apMIN a /\ w N Qo ZA a 5 <r. +25 C Pa < 20 eu AA <2 4 3 4 1 = A 3 | eQ 2 VA @ 10 t W 1 $ Ts +100 Cg ] 10 S v E oof 4 fo Lo 08 : 0 0102 05 3 2 5 10 20 50 100 0.1 1.0 10 100 RRENT mA FORWARD CURRENT Ip (mA) Ic COLLECTOR CURRENT im cr108 Fig. 1. Forward Voltage Drop vs. Fig. 2. Normalized Beta vs. Forward Current Collector Current 10* i C _ 10! < E Yo . bE . /| 2 w Wore = - / E o L S z / g x '0F t bE a E 2 }. Ir - Vee = 12 iL | | Q 25 50 75 100 125 Q 4 8 12 16 20 24 T TEMPERATURE (C) e107 Ve, valts crt08 Fig. 4. Detector Standard Transfer Curves NOTES Veg at 10 volts. trailing edge of the output pulse. 2. The frequency at which ic is 3dB down from the IK H, value. 1. The current transfer ratio (I; /1-) is the ratio of the detector collector current to the LED input current with 3. ton is measured from 10% of the leading edge of the input pulse to the 90% point on the leading edge of the output pulse. toge is measured from 90% of the trailing edge of the input pulse to the 10% point on the