128
GaAs Infrared Emitting Diodes
Long T-1 Plastic Package — 940 nm VTE3322LAH, 24LAH
PA CKAGE DIMENSIONS inch (mm)
CASE 50A LONG T-1
CHIP SIZE: .011" X .011"
DESCRIPTION
Th is narr ow beam angle, 3 mm di am et er pl ast ic pac kages, G aAs, 940 nm emit te r is suitabl e for us e i n optical switch ap pli cat i ons.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: -40°C to 100°C
Continuous Power Dissipation: 100 m W
Derate above 30°C: 1.43 mW/°C
Maximum Continuou s Current: 50 mA
Derate above 30°C: 0.71 mA/°C
Peak Forward Current, 10 µ s, 100 pps: 3 A
Temp . Coefficient of P ower Output (Typ.): -.8%/°C
Maximum Reverse Volt age: 5.0V
Maximum Re verse Current @ V
R
= 5V: 10 µA
Peak Wavelength (Typical ): 940 nm
Junction Capacitance @ 0V, 1 MHz (Typ.) : 14 pF
Response Time @ I
F
= 20 mA
Rise: 1.0 µs Fall: 1. 0 µs
Lead Soldering Temperature:
260°C
(1.6 mm from case, 5 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 123-124)
Refer to General Product Notes, page 2.
P art Number
Output Forward Drop Half Power Beam
Angle
Irradiance Radiant
Intensity Total Power Test
Current VF
EeCondition IePOIFT @ IFT θ1/2
mW/cm2distance Diameter mW/sr mW mA
(Pulsed) Volts Typ.
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE3322LAH 1.0 1.3 10.16 2.1 1.0 1.5 20 1.25 1.6 ±10°
VTE3324LAH 2.0 2.6 10.16 2.1 2.0 2.5 20 1.25 1.6 ±10°
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
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