BL Galaxy Electrical Production specification
NPN High Voltage Amplifier MMBTA42
Document number: BL/SSSTC076 www.galaxycn.com
Rev.A 1
FEATURES
z Epitaxial planar die construction. Pb
Lead-free
z Complementary PNP type available
(MMBTA92).
z Ideal for medium power amplification and switching.
APPLICATIONS
z NPN High voltage amplifier.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBTA42 1D SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
VCBO collector-base voltage 300 V
VCEO collector-emitter voltage 300 V
VEBO emitter-base voltage 6 V
ICcollector current (DC) 0.2 A
PCCollector dissipation 0.35 W
Tj ,Tstg junction and storage temperature -55-150 °C
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter Test conditions MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage IC=100μA,IE=0 300 - V
V(BR)CEO Collector-emitter breakdown voltage IC=1.0mA,IB=0 B300 - V
V(BR)EBO Emitter-base breakdown voltage IE=100μA,IC=0 6 - V
ICBO collector cut-off current IE = 0; VCB = 200V - 0.1 μA
IEBO emitter cut-off current IC = 0; VEB = 6V - 0.1 μA
hFE DC current gain
VCE =10V; IC=1mA
VCE =10V;IC =10mA
VCE =10V;IC =30mA
25
40
40
-
-
-
VCE(sat) collector-emitter saturation voltage IC =20mA; IB =2mA B- 0.5 V
VBE(sat) base-emitter saturation voltage IC =20mA; IB=2mA B- 0.9 V
Cob Collector output capacitance VCB=20V,IE=0;f=1.0MHz 3.0 pF
fTtransition frequency IC=10mA; VCE =20V
f=100MHz 50 - MHz