SMD General Purpose Transistor (PNP) MMBT3906 SMD General Purpose Transistor (PNP) Features * PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications * RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25C unless noted otherwise) Symbol Description MMBT3906 Unit Marking Code 2A -VCBO Collector-Base Voltage 40 V -VCEO Collector-Emitter Voltage 40 V -VEBO Emitter-Base Voltage 5.0 V -IC Collector Current 200 mA Ptot Power Dissipation above 25C 250 mW RJA Thermal Resistance from Junction to Ambient 450 C /W Junction Temperature 150 C -55 to +150 C TJ TSTG Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-05-06 Page 1 of 4 SMD General Purpose Transistor (PNP) MMBT3906 Electrical Characteristics (T Ambient=25C unless noted otherwise) Symbol hFE* -V(BR)CBO Description D.C. Current Gain Collector-Base Breakdown Voltage MMBT3906 Unit Conditions Min. Max. 60 - -VCE=1V, -IC=0.1mA 80 - -VCE=1V, -IC=1mA 100 300 -VCE=1V, -IC=10mA 60 - -VCE=1V, -IC=50mA 30 - -VCE=1V, -IC=100mA 40 V -IC=10A, IE=0 -V(BR)CEO* Collector-Emitter Breakdown Voltage 40 - V -IC=1mA, IB=0 -V(BR)EBO* Emitter-Base Breakdown Voltage 5.0 - V -IE=10A, IC=0 - 0.25 - 0.4 0.65 0.85 - 0.95 -IC=10mA, -IB=1mA -VCE(sat)* Collector-Emitter Saturation Voltage -VBE(sat)* Base-Emitter Saturation Voltage -ICEV Collector-Emitter Cut-off Current - 50 nA -VEB=3V, -VCE=30V -IEBV Emitter-Base Cut-off Current - 50 nA -VEB=3V, -VCE=30V 250 - MHz fT Current Gain-Bandwidth Product V V CCBO Collector-Base Capacitance - 4.5 pF CEBO Emitter-Base Capacitance - 10 pF NF Noise Figure - 4.0 dB hfe Small Signal Current Gain 100 400 td Delay Time (see Fig 1) - 35 tr Rise Time (see Fig 1) - 35 ts Storage Time (see Fig 2) - 225 tf Fall Time (see Fig 2) - 75 -IC=50mA, -IB=5mA -IC=10mA, -IB=1mA -IC=50mA, -IB=5mA -VCE=20V, -IC=10mA, f=100MHz -VCB=5V, IE=0, f=100KHz -VEB=0.5V, IC=0 f=100KHz -VCE=5V, -IC=100A, RG=1K, f=10Hz to 15.7kHz -VCE=10V, -IC=1mA f=1KHz -IB1=1mA, -IC=10mA nS -IB1=1mA, -IC=10mA IB1=-IB2=1mA, -IC=10mA IB1=-IB2=1mA, -IC=10mA Note: *Pulse Test: Pulse Width 300s, Duty Cycle 2.0% Rev. A/AH 2008-05-06 www.taitroncomponents.com Page 2 of 4 SMD General Purpose Transistor (PNP) MMBT3906 Fig 1 Fig 2 Dimensions in mm SOT-23 Rev. A/AH 2008-05-06 www.taitroncomponents.com Page 3 of 4 SMD General Purpose Transistor (PNP) MMBT3906 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTACOES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN' AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-05-06 www.taitroncomponents.com Page 4 of 4