Rev. A/AH
2008
-
05
-
06
MMBT3906
TAITRON COMPONEN
T
S INCORPORATED www.taitroncomponents.com
Page 1
of 4
Tel: (800)
-
TAITRON (800)
-
824
-
8766 (661)
-
257
-
6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
SMD General Purpose
Transistor (PNP)
SMD General Purpose Transistor (PNP)
Features
• PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
• RoHS compliance
Mechanical Data
Case: SOT-23, Plastic Package
Terminals: Solderable per MIL-STD-202G, Method 208
Weight: 0.008 gram
Maximum Ratings (T
Ambient
=25ºC unless noted otherwise)
Symbol Description MMBT3906 Unit
Marking Code 2A
-VCBO Collector-Base Voltage 40 V
-VCEO Collector-Emitter Voltage 40 V
-VEBO Emitter-Base Voltage 5.0 V
-IC Collector Current 200 mA
Ptot Power Dissipation above 25°C 250 mW
RθJA Thermal Resistance from Junction to Ambient 450 ° C /W
TJ Junction Temperature 150 ° C
TSTG Storage Temperature Range -55 to +150 ° C
SOT-23
Rev. A/AH
2008
-
05
-
06
MMBT3906
SMD General Purpose Transistor (PNP)
www.taitroncomponents.com Page 2
of 4
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
MMBT3906
Symbol Description Min. Max. Unit Conditions
60 - -VCE=1V, -IC=0.1mA
80 - -VCE=1V, -IC=1mA
100 300 -VCE=1V, -IC=10mA
60 - -VCE=1V, -IC=50mA
hFE* D.C. Current Gain
30 -
-VCE=1V, -IC=100mA
-V(BR)CBO Collector-Base Breakdown Voltage 40 V -IC=10µA, IE=0
-V(BR)CEO* Collector-Emitter Breakdown Voltage 40 - V -IC=1mA, IB=0
-V(BR)EBO* Emitter-Base Breakdown Voltage 5.0 - V -IE=10µA, IC=0
- 0.25 -IC=10mA, -IB=1mA
-VCE(sat)* Collector-Emitter Saturation Voltage - 0.4
V -IC=50mA, -IB=5mA
0.65 0.85 -IC=10mA, -IB=1mA
-VBE(sat)* Base-Emitter Saturation Voltage
- 0.95
V -IC=50mA, -IB=5mA
-ICEV Collector-Emitter Cut-off Current - 50 nA -VEB=3V, -VCE=30V
-IEBV Emitter-Base Cut-off Current - 50 nA -VEB=3V, -VCE=30V
fT Current Gain-Bandwidth Product 250 - MHz -VCE=20V, -IC=10mA,
f=100MHz
CCBO Collector-Base Capacitance - 4.5 pF -VCB=5V, IE=0,
f=100KHz
CEBO Emitter-Base Capacitance - 10 pF -VEB=0.5V, IC=0
f=100KHz
NF Noise Figure - 4.0 dB -VCE=5V, -IC=100µA,
RG=1KΩ,
f=10Hz to 15.7kHz
hfe Small Signal Current Gain 100 400 -VCE=10V, -IC=1mA
f=1KHz
td Delay Time (see Fig 1) - 35 -IB1=1mA, -IC=10mA
tr Rise Time (see Fig 1) - 35 -IB1=1mA, -IC=10mA
ts Storage Time (see Fig 2) - 225 IB1=-IB2=1mA, -IC=10mA
tf Fall Time (see Fig 2) - 75
nS
IB1=-IB2=1mA, -IC=10mA
Note: *Pulse Test: Pulse Width≤ 300µs, Duty Cycle ≤2.0%
Rev. A/AH
2008
-
05
-
06
MMBT3906
SMD General Purpose Transistor (PNP)
www.taitroncomponents.com Page 3
of 4
Fig 1 Fig 2
Dimensions in mm
SOT-23
Rev. A/AH
2008
-
05
-
06
MMBT3906
SMD General Purpose Transistor (PNP)
www.taitroncomponents.com Page 4
of 4
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