IPG20N06S4-15A
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active IDTC=25 °C, VGS=10 V1) 20 A
TC=100 °C,
VGS=10 V2) 20
Pulsed drain current2)
one channel active ID,pulse -80
Avalanche energy, single pulse2, 4) EAS ID=10A 90 mJ
Avalanche current, single pulse4) IAS -15 A
Gate source voltage VGS - ±20 V
Power dissipation
one channel active Ptot TC=25 °C 50 W
Operating and storage temperature Tj,Tstg - -55 ... +175 °C
Value
VDS 60 V
RDS(on),max4) 15.5 mW
ID20 A
Product Summary
Type Package Marking
IPG20N06S4-15A PG-TDSON-8-10 4N0615
PG-TDSON-8-10
Rev. 1.0
page 1 2015-09-17
IPG20N06S4-15A
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - - 3 K/W
SMD version, device on PCB RthJA minimal footprint - 100 -
6 cm2cooling area3) - 60 -
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 60 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=20 µA 2.0 3.0 4.0
Zero gate voltage drain current4) IDSS VDS=60 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=60 V, VGS=0 V,
Tj=125 °C2) - 5 100
Gate-source leakage current4) IGSS VGS=16 V, VDS=0 V - - 100 nA
Drain-source on-state resistance4) RDS(on) VGS=10 V, ID=17 A - 12.9 15.5 mW
Values
Rev. 1.0
page 2 2015-09-17
IPG20N06S4-15A
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance4) Ciss - 1740 2260 pF
Output capacitance4) Coss - 430 560
Reverse transfer capacitance4) Crss - 19 38
Turn-on delay time td(on) - 12 - ns
Rise time tr- 2 -
Turn-off delay time td(off) - 17 -
Fall time tf- 9 -
Gate Charge Characteristics
2, 4)
Gate to source charge Qgs - 9 12 nC
Gate to drain charge Qgd - 2.2 4.4
Gate charge total Qg- 22 29
Gate plateau voltage Vplateau - 5.3 - V
Reverse Diode
Diode continous forward current2)
one channel active IS- - 20 A
Diode pulse current2)
one channel active IS,pulse - - 80
Diode forward voltage VSD VGS=0 V, IF=17 A,
Tj=25 °C - 0.95 1.3 V
Reverse recovery time2) trr VR=30 V, IF=IS,
diF/dt=100 A/µs - 35 - ns
Reverse recovery charge2, 4) Qrr - 35 - nC
4)
Per channel
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by bondwire; with an RthJC = 3K/W the chip is able to carry 43A at 25°C.
TC=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=20 A, RG=11 W
VDD=48 V, ID=20 A,
VGS=0 to 10 V
2) Specified by design. Not subject to production test.
Rev. 1.0
page 3 2015-09-17
IPG20N06S4-15A
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V; one channel active ID= f(TC); VGS ≥ 6 V; one channel active
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25°C; D=0; one channel active ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
0.1
1
10
100
0.1 1 10 100
ID[A]
VDS [V]
single pulse
0.01
0.05
0.1
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
ZthJC [K/W]
tp[s]
0
10
20
30
40
50
60
0 50 100 150 200
Ptot [W]
TC[°C]
0
5
10
15
20
25
0 50 100 150 200
ID[A]
TC[°C]
Rev. 1.0
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IPG20N06S4-15A
5 Typ. output characteristics4) 6 Typ. drain-source on-state resistance4)
ID= f(VDS); Tj= 25 °C RDS(on) = f(ID); Tj= 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics4) 8 Typ. drain-source on-state resistance4)
ID= f(VGS); VDS = 6V RDS(on) = f(Tj); ID= 17 A; VGS = 10 V
parameter: Tj
5
10
15
20
25
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
5 V
5.5 V
6 V
6.5 V
7 V10 V
0
20
40
60
80
02468
ID[A]
VDS [V]
5 V 5.5 V 6 V 6.5 V
10 V
10
20
30
40
50
0 20 40 60 80
RDS(on) [mW]
ID[A]
-55 °C
25 °C
175 °C
0
20
40
60
80
1 3 5 7
ID[A]
VGS [V]
Rev. 1.0
page 5 2015-09-17
IPG20N06S4-15A
9 Typ. gate threshold voltage 10 Typ. Capacitances4)
VGS(th) = f(Tj); VGS =VDS C= f(VDS); VGS = 0 V; f= 1 MHz
parameter: ID
11 Typical forward diode characteristicis4) 12 Avalanche characteristics4)
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
100 °C
150 °C
0.1
1
10
100
1 10 100 1000
IAV [A]
tAV [µs]
25 °C
175 °C
100
101
102
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF[A]
VSD [V]
20µA
200µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
101
102
103
104
0 5 10 15 20 25 30
C[pF]
VDS [V]
Rev. 1.0
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IPG20N06S4-15A
13 Avalanche energy4) 14 Drain-source breakdown voltage
EAS = f(Tj), ID= 10A VBR(DSS) = f(Tj); ID= 1 mA
15 Typ. gate charge4) 16 Gate charge waveforms
VGS = f(Qgate); ID= 20 A pulsed
parameter: VDD
VGS
Qgate
Vgs(th)
Qg(th)
Qgs Qgd
Qsw
Qg
55
57
59
61
63
65
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
12 V
48 V
0
2
4
6
8
10
12
0 5 10 15 20 25
VGS [V]
Qgate [nC]
0
20
40
60
80
100
25 50 75 100 125 150 175
EAS [mJ]
Tj[°C]
Rev. 1.0
page 7 2015-09-17
IPG20N06S4-15A
Published by
Infineon Technologies AG
81726 Munich, Germany
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The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (
www.infineon.com
).
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For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8 2015-09-17
IPG20N06S4-15A
Revision History
Version
Revision 1.0
Date
17.09.2015
Changes
Data Sheet revision 1.0
Rev. 1.0
page 9 2015-09-17