GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench(R) MOSFET N-Channel: 100 V, 6 A, 110 m P-Channel: -80 V, -6 A, 190 m Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in Max rDS(on) = 110 m at VGS = 10 V, ID = 3 A power dissipation over diode bridge. Max rDS(on) = 175 m at VGS = 6 V, ID = 2.4 A Application Q2/Q3: P-Channel Max rDS(on) = 190 m at VGS = -10 V, ID = -2.3 A Max rDS(on) = 235 m at VGS = -4.5 V, ID = -2.1 A High-Efficiency Bridge Rectifiers Substantial efficiency benefit in PD solutions RoHS Compliant Top Bottom Pin 1 G4 S4 S4 G3 S3 S3 D3/ D4 D3/ D4 D1/ D2 D1/ D2 G1 S1 S1 G2 S2 S2 7 S3 8 5 S2 G3 9 4 G2 S4 10 Q3 (Pch) Q2 (Pch) Q4 (Nch) 3 S1 Q1 (Nch) S1 S4 11 2 G4 12 1 G1 D3,D4 to backside MLP 4.5x5 6 S2 S3 D1,D2 to backside (isolated from D1,D2) MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Package limited) TC = 25 C -Continuous (Silicon limited) TC = 25 C -Continuous TA = 25 C (Note 1a) -Pulsed PD TJ, TSTG Power Dissipation for Single Operation TC = 25 C Power Dissipation for Dual Operation TA = 25 C Q1/Q4 100 Q2/Q3 -80 Units V 20 20 V 6 -6 10 -10 3.4 -2.6 12 -10 22 (Note 1a) Operating and Storage Junction Temperature Range 37 2.5 -55 to +150 A W C Thermal Characteristics RJA Thermal Resistance, Junction to Ambient (Note 1a) 50 RJA Thermal Resistance, Junction to Ambient (Note 1b) 160 C/W Package Marking and Ordering Information Device Marking FDMQ8203 Device FDMQ8203 (c)2011 Semiconductor Components Industries, LLC. August-2017,Rev 3 Package MLP4.5x5 Reel Size 13 " Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMQ8203/D FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench(R) MOSFET FDMQ8203 Symbol Parameter Test Conditions Type Min 100 -80 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V ID = -250 A, VGS = 0 V Q1/Q4 Q2/Q3 BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C ID = -250 A, referenced to 25 C Q1/Q4 Q2/Q3 IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V VDS = -64 V, VGS = 0 V Q1/Q4 Q2/Q3 1 -1 A A IGSS Gate to Source Leakage Current VGS = 20 V, VDS= 0 V Q1/Q4 Q2/Q3 100 100 nA nA 4 -3 V V 72 -79 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS = VDS, ID = -250 A Q1/Q4 Q2/Q3 VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C ID = -250 A, referenced to 25 C Q1/Q4 Q2/Q3 -8 5 VGS = 10 V, ID = 3 A VGS = 6 V, ID = 2.4 A VGS = 10 V, ID = 3 A , TJ = 125 C Q1/Q4 85 118 147 110 175 191 VGS = -10 V, ID = -2.3 A Q2/Q3 VGS = -4.5 V, ID = -2.1 A VGS = -10 V, ID = -2.3 A, TJ = 125 C 161 188 273 190 235 323 rDS(on) Drain to Source On Resistance gFS Forward Transconductance 2 -1 3 -1.6 mV/C m VDS = 10 V, ID = 3 A VDS = -10 V, ID = -2.3 A Q1/Q4 Q2/Q3 6 6 Q1/Q4: VDS = 50 V, VGS = 0 V, f = 1 MHZ Q1/Q4 Q2/Q3 158 639 210 850 pF Q1/Q4 Q2/Q3 41 46 55 65 pF Q1/Q4 Q2/Q3 2.6 24 5 40 pF Q1/Q4 Q2/Q3 3.8 4.7 10 10 ns Q1/Q4 Q2/Q3 1.3 2.8 10 10 ns Q1/Q4 Q2/Q3 7.5 22 15 35 ns Q1/Q4 Q2/Q3 1.9 2.7 10 10 ns Q1/Q4 Q2/Q3 2.9 13 5 19 nC Q1/Q4 Q2/Q3 1.6 6.4 3 10 nC Q1/Q4 Q2/Q3 0.8 1.6 nC Q1/Q4 Q2/Q3 0.8 2.6 nC S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Q2/Q3: VDS = -40 V, VGS = 0 V, f = 1 MHZ Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge Q1/Q4: VDD = 50 V, ID = 3 A, VGS = 10 V, RGEN = 6 Q2/Q3: VDD = -40 V, ID = -2.3 A, VGS = -10 V, RGEN = 6 VGS = 0 V to 10 V VGS = 0 V to -10 V Q1/Q4: VDD = 50 V, VGS = 0 V to 5 V VGS = 0 V to -4.5 V ID = 3 A Q2/Q3: VDD = -40 V, ID = -2.3A www.onsemi.com 2 FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units 0.86 -0.82 1.3 -1.3 V Q1/Q4 Q2/Q3 32 26 52 42 ns Q1/Q4 Q2/Q3 21 26 34 42 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3 A VGS = 0 V, IS = -2.3 A (Note 2) Q1/Q4 (Note 2) Q2/Q3 Q1/Q4: IF = 3 A, di/dt = 100 A/s Q2/Q3: IF = -2.3 A, di/dt = 100 A/s Notes: 1: RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper, the board designed Q1+Q3 or Q2+Q4. 2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. www.onsemi.com 3 b. 160 C/W when mounted on a minimum pad of 2 oz copper, the board designed Q1+Q3 or Q2+Q4. FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted 5 VGS = 10 V VGS = 8 V VGS = 7 V 9 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 12 VGS = 6 V 6 VGS = 5 V 3 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 6 V 3 2 VGS = 7 V 1 VGS = 8 V 0 3 6 9 12 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 400 ID = 3 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 0 5 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 3 A 200 TJ = 125 oC 100 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 IS, REVERSE DRAIN CURRENT (A) 9 VDS = 5 V TJ = 150 oC 6 TJ = 25 oC 3 = -55 oC 0 3 4 5 6 6 7 8 9 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2 5 VGS, GATE TO SOURCE VOLTAGE (V) 12 TJ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 300 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 5 V 4 7 20 10 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 1.2 FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics (N-Channel) TJ = 25 C unless otherwise noted 1000 ID = 3 A VDD = 50 V 8 VDD = 25 V VDD = 75 V 6 4 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 100 Ciss Coss 10 2 f = 1 MHz VGS = 0 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 1 0.1 Crss 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage Figure 10. ID, DRAIN CURRENT (A) 20 10 1 ms 1 10 ms 0.1 THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s o 0.01 0.005 0.1 RJA = 160 C/W 10 s TA = 25 oC DC 1 10 10 100 300 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area www.onsemi.com 5 100 FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics (N-Channel) TJ = 25 C unless otherwise noted 4 VGS = -10 V VGS = -4.5 V 8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 -ID, DRAIN CURRENT (A) 25 oC unlenss otherwise noted VGS = -3.5 V 6 VGS = -3 V 4 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2 VGS = -2.5 V 0 0 1 2 3 4 VGS = -2.5 V VGS = -3 V 3 VGS = -3.5 V 2 VGS = -4.5 V 1 VGS = -10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0 5 2 4 6 -ID, DRAIN CURRENT (A) 8 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. On-Region Characteristics Figure 11. Normalized on-Resistance vs Drain Current and Gate Voltage 600 ID = - 2.3 A VGS = - 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 ID = -2.3 A SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 500 400 300 TJ = 25 oC 100 0 100 125 150 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance vs Gate to Source Voltage Figure 12. Normalized On-Resistance vs Junction Temperature 10 10 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 8 -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) TJ = 125 oC 200 TJ, JUNCTION TEMPERATURE (oC) VDS = -5 V 6 TJ = 150 oC 4 TJ = 25 oC 2 TJ = 0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1 2 3 -55 oC 4 5 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Source to Drain Diode Forward Voltage vs Source Current Figure 14. Transfer Characteristics www.onsemi.com 6 1.2 FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics (P-Channel) TJ = 25 oC unlenss otherwise noted 1000 ID = -2.3 A Ciss 8 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = -10 V 6 VDD = -8 V VDD = -12 V 4 100 2 f = 1 MHz VGS = 0 V 0 0 2 4 6 8 10 12 10 0.1 14 20 10 1 ms 1 10 ms 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s o 0.01 0.005 0.1 RJA = 160 C/W 10 s TA = 25 oC DC 1 10 1 10 Figure 17. Capacitance vs Drain to Source Voltage Figure 16. Gate Charge Characteristics THIS AREA IS LIMITED BY rDS(on) Crss -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -ID, DRAIN CURRENT (A) Coss 100 300 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 18. Forward Bias Safe Operating Area www.onsemi.com 7 100 FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics (P-Channel) TJ = TJ = 25 oC unlenss otherwise noted P(PK), PEAK TRANSIENT POWER (W) 2000 1000 SINGLE PULSE o RJA = 160 C/W o TA = 25 C 100 10 1 0.1 -4 10 -3 10 -2 -1 10 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 19. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 160 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 t, RECTANGULAR PULSE DURATION (sec) Figure 20. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 8 1000 FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout www.onsemi.com 9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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