© Semiconductor Components Industries, LLC, 2016
July, 2019 − Rev. 3
1Publication Order Number:
NVMFS5C670NL/D
NVMFS5C670NL
MOSFET – Power, Single
N-Channel
60 V, 6.1 mW, 71 A
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NVMFS5C670NLWF − Wettable Flank Option for Enhanced Optical
Inspection
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 60 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJC
(Notes 1, 3) Steady
State
TC = 25°CID71 A
TC = 100°C 50
Power Dissipation
RqJC (Note 1)
TC = 25°CPD61 W
TC = 100°C 31
Continuous Drain
Current RqJA
(Notes 1, 2, 3) Steady
State
TA = 25°CID17 A
TA = 100°C 12
Power Dissipation
RqJA (Notes 1 & 2)
TA = 25°CPD3.6 W
TA = 100°C 1.8
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 440 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+ 175
°C
Source Current (Body Diode) IS68 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 3.6 A)
EAS 166 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State RqJC 2.4 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
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XXXXXX
AYWZZ
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
XXXXXX = 5C670L
XXXXXX = (NVMFS5C670NL) or
XXXXXX = 670LWF
XXXXXX = (NVMFS5C670NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
V(BR)DSS RDS(ON) MAX ID MAX
60 V
6.1 mW @ 10 V
71 A
8.8 mW @ 4.5 V
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
27 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25 °C 10
mA
TJ = 125°C 250
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 53 mA1.2 2.0 V
Threshold Temperature Coefficient VGS(TH)/TJ−4.7 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 35 A 5.1 6.1
mW
VGS = 4.5 V ID = 35 A 7.0 8.8
Forward Transconductance gFS VDS = 15 V, ID = 35 A 82 S
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
1400
pF
Output Capacitance COSS 690
Reverse Transfer Capacitance CRSS 15
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V; ID = 35 A 9.0 nC
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V; ID = 35 A 20 nC
Threshold Gate Charge QG(TH)
VGS = 10 V, VDS = 48 V; ID = 35 A
2.5
nC
Gate−to−Source Charge QGS 4.5
Gate−to−Drain Charge QGD 2.0
Plateau Voltage VGP 3.1 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 48 V,
ID = 35 A, RG = 2.5 W
11
ns
Rise Time tr60
Turn−Off Delay Time td(OFF) 15
Fall Time tf4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 35 A
TJ = 25°C 0.9 1.2
V
TJ = 125°C 0.8
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 35 A
34
ns
Charge Time ta17
Discharge Time tb17
Reverse Recovery Charge QRR 19 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NVMFS5C670NL
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3
TYPICAL CHARACTERISTICS
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
−50 −25 0 25 50 75 100 125 150 175
5
6
8
10
12
13
15
3.5 4.5 5.5 6.5 7.5 8.5 9.5
0
20
40
60
80
100
120
140
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
75553515
10
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
IDSS, LEAKAGE (nA)
2.6 V
3.0 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
TJ = 25°C
ID = 35 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
VGS = 10 V
ID = 35 A
TJ = 125°C
TJ = 85°C
3.4 V
3.8 V
4.5 V VDS = 5 V
TJ = 175°C
6.5 V to
10 V
0
20
40
60
80
100
120
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5254565
9
8
7
6
5
4
10
100
1000
10000
100000
10 20 30 40 50 60
140
7
9
11
14
NVMFS5C670NL
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4
TYPICAL CHARACTERISTICS
1
10
100
1000
10000
0 102030405060 0
1
2
3
4
5
6
7
8
9
10
02468101214161820
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
VDS (V) TIME IN AVALANCHE (s)
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
IPEAK, DRAIN CURRENT (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
VDS = 48 V
TJ = 25°C
ID = 35 A
QT
QGS
QGD
VGS = 4.5 V
VDS = 48 V
ID = 35 A
td(off)
td(on)
tf
tr
TJ = 125°C
TJ = 25°C
TJ = −55°C
TJ = 100°C
TJ = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
500 ms
1 ms
10 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
10
100
1000
1 10 100
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
1
10
100
1000
0.1
1 10 1000.1
0.1
1
10
100
1E−51E−41E−31E−2
NVMFS5C670NL
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5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Characteristics
PULSE TIME (sec)
R(t) (°C/W)
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NVMFS5C670NLT1G 5C670L DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C670NLWFT1G 670LWF DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C670NLT3G 5C670L DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS5C670NLWFT3G 670LWF DFN5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
NVMFS5C670NLAFT1G 5C670L DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C670NLWFAFT1G 670LWF DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C670NLWFAFT3G 670LWF DFN5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFS5C670NL
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6
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NVMFS5C670NL/D/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
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