Sample & Buy Product Folder Support & Community Tools & Software Technical Documents Reference Design LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 LM5050-1/-Q1 High-Side OR-ing FET Controller 1 Features 3 Description * The LM5050-1/-Q1 High Side OR-ing FET Controller operates in conjunction with an external MOSFET as an ideal diode rectifier when connected in series with a power source. This ORing controller allows MOSFETs to replace diode rectifiers in power distribution networks thus reducing both power loss and voltage drops. 1 * * * * * * * Available in Standard and AEC-Q100 Qualified Versions LM5050Q0MK-1 (up to 150C TJ) and LM5050Q1MK-1 (up to 125C TJ) Wide Operating Input Voltage Range, VIN: 1 V to 75 V (VBIAS required for VIN < 5 V) 100-V Transient Capability Charge Pump Gate Driver for External N-Channel MOSFET Fast 50-ns Response to Current Reversal 2-A Peak Gate Turnoff Current Minimum VDS Clamp for Faster Turnoff Package: SOT-6 (Thin SOT-23-6) The LM5050-1/-Q1 controller provides charge pump gate drive for an external N-Channel MOSFET and a fast response comparator to turn off the FET when current flows in the reverse direction. The LM5050-1/Q1 can connect power supplies ranging from 5 V to 75 V and can withstand transients up to 100 V. Device Information(1) 2 Applications Active OR-ing Supplies PART NUMBER of Redundant (N+1) LM5050-1 Power PACKAGE SOT (6) LM5050-1-Q1 BODY SIZE (NOM) 2.90 mm x 1.60 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Full Application VIN VOUT +5.0V to +75V 100: IN OUT GATE VS LM5050-1 Shutdown Low= FET On, High= FET Off OFF 0.1 PF GND GND GND Typical Redundant Supply Configuration PS1 IN GATE OUT LM5050-1 VS GND CLOAD PS2 IN RLOAD GATE OUT LM5050-1 VS GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 4 4 5 8 Absolute Maximum Ratings ...................................... ESD Ratings: LM5050-1 .......................................... ESD Ratings: LM5050-1-Q1 ..................................... Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description ............................................ 11 7.1 Overview ................................................................. 11 7.2 Functional Block Diagram ....................................... 12 7.3 Feature Description................................................. 12 7.4 Device Functional Modes........................................ 13 8 Application and Implementation ........................ 14 8.1 Application Information............................................ 14 8.2 Typical Applications ................................................ 16 9 Power Supply Recommendations...................... 21 10 Layout................................................................... 21 10.1 Layout Guidelines ................................................. 21 10.2 Layout Example .................................................... 21 11 Device and Documentation Support ................. 22 11.1 11.2 11.3 11.4 11.5 11.6 Documentation Support ........................................ Related Links ........................................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 22 22 22 22 22 22 12 Mechanical, Packaging, and Orderable Information ........................................................... 22 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (June 2013) to Revision E * 2 Page Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................. 1 Submit Documentation Feedback Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 LM5050-1, LM5050-1-Q1 www.ti.com SNVS629E - MAY 2011 - REVISED DECEMBER 2015 5 Pin Configuration and Functions DDC Package 6-Pin SOT Top View GND 2 OFF 3 LM5050MK-1 VS 1 6 OUT 5 GATE 4 IN Pin Functions PIN NO. NAME I/O DESCRIPTION The main supply pin for all internal biasing and an auxiliary supply for the internal gate drive charge pump. Typically connected to either VOUT or VIN; a separate supply can also be used. 1 VS I 2 GND PWR 3 OFF I A logic high state at the OFF pin will pull the GATE pin low and turn off the external MOSFET. Note that when the MOSFET is off, current will still conduct through the FET's body diode. This pin should may be left open or connected to GND if unused. 4 IN I Voltage sense connection to the external MOSFET Source pin. 5 GATE O Connect to the Gate of the external MOSFET. Controls the MOSFET to emulate a low forwardvoltage diode. 6 OUT O Voltage sense connection to the external MOSFET Drain pin. Ground return for the controller Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 Submit Documentation Feedback 3 LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) IN, OUT Pins to Ground (2) GATE Pin to Ground (2) MIN MAX UNIT -0.3 100 V -0.3 100 V VS Pin to Ground -0.3 100 V OFF Pin to Ground -0.3 7 V Storage Temperature -65 150 C (1) (2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The GATE pin voltage is typically 12 V above the IN pin voltage when the LM5050-1 is enabled (that is, OFF Pin is Open or Low, and VIN > VOUT). Therefore, the absolute maximum rating for the IN pin voltage applies only when the LM5050-1 is disabled (that is, OFF Pin is logic high), or for a momentary surge to that voltage because the Absolute Maximum Rating for the GATE pin is also 100 V 6.2 ESD Ratings: LM5050-1 VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 2000 Machine model (MM) (2) 150 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. The MM is a 200-pF capacitor discharged through a 0- resistor (that is, directly) into each pin. Applicable test standard is JESD-A115A. 6.3 ESD Ratings: LM5050-1-Q1 VALUE V(ESD) (1) (2) Human-body model (HBM), per AEC Q100-002 Electrostatic discharge (1) 2000 Machine model (MM) (2) UNIT V 150 AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. The MM is a 200-pF capacitor discharged through a 0- resistor (that is, directly) into each pin. Applicable test standard is JESD-A115A. 6.4 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT IN, OUT, VS Pins 5 75 OFF Pin 0 5.5 V Standard Grade -40 125 C LM5050Q0MK-1 -40 150 C LM5050Q1MK-1 -40 125 C Junction Temperature (TJ) V 6.5 Thermal Information LM5050-1/-Q1 THERMAL METRIC (1) DDC (SOT) UNIT 6 PINS RJA Junction-to-ambient thermal resistance 180.7 C/W RJC(top) Junction-to-case (top) thermal resistance 41.3 C/W RJB Junction-to-board thermal resistance 28.2 C/W JT Junction-to-top characterization parameter 0.7 C/W JB Junction-to-board characterization parameter 27.8 C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 LM5050-1, LM5050-1-Q1 www.ti.com SNVS629E - MAY 2011 - REVISED DECEMBER 2015 Thermal Information (continued) LM5050-1/-Q1 THERMAL METRIC (1) DDC (SOT) UNIT 6 PINS RJC(bot) Junction-to-case (bottom) thermal resistance N/A C/W 6.6 Electrical Characteristics Typical values represent the most likely parametric norm at TJ = 25C, and are provided for reference purposes only. Unless otherwise stated the following conditions apply: VIN = 12 V, VVS = VIN, VOUT = VIN, VOFF = 0 V, CGATE= 47 nF, and TJ = 25C. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VS PIN Operating Supply Voltage Range VVS TJ = -40C to 125C VVS= 5 V, VIN = 5 V VOUT = VIN - 100 mV Operating Supply Current IVS 5 TJ = 25C 75 V 75 TJ = -40C to 125C 105 VVS= 12 V, VIN = 12 V TJ = 25C VOUT = VIN - 100 mV TJ = -40C to 125C 100 VVS= 75 V, VIN = 75 V TJ = 25C VOUT = VIN - 100 mV TJ = -40C to 125C 130 147 A 288 IN PIN Operating Input Voltage Range VIN TJ = -40C to 125C VIN = 5 V VVS= VIN VOUT = VIN - 100 mV GATE = Open IIN IN Pin current VIN = 12 V to 75 V VVS= VIN VOUT = VIN - 100 mV GATE = Open 5 TJ = 25C 75 V 190 TJ = -40C to 125C 32 TJ = 25C 305 A 320 TJ = -40C to 125C LM5050MK-1, LM5050Q1MK-1 233 400 TJ = -40C to 125C LM5050Q0MK-1 233 475 5 75 OUT PIN VOUT Operating Output Voltage Range VIN = 5 V to 75 V OUT Pin Current VVS= VIN VOUT = VIN - 100 mV TJ = 25C IOUT VIN = 5 V VVS = VIN VGATE = VIN Gate Pin Source VOUT = VIN - 175 mV Current VIN = 12 V to 75 V VVS = VIN VGATE = VIN VOUT = VIN - 175 mV TJ = 25C VIN = 5 V VVS = VIN VOUT = VIN - 175 mV TJ = 25C VIN = 12 V to 75 V VVS = VIN VOUT = VIN - 175 mV TJ = 25C TJ = -40C to 125C V 3.2 TJ = -40C to 125C 8 A GATE PIN IGATE(ON) VGS (1) VGATE - VIN in Forward Operation (1) TJ = -40C to 125C 30 12 TJ = 25C TJ = -40C to 125C TJ = -40C to 125C TJ = -40C to 125C 41 A 32 20 41 7 4 9 V 12 9 14 Measurement of VGS voltage (that is. VGATE - VIN) includes 1 M in parallel with CGATE. Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 Submit Documentation Feedback 5 LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com Electrical Characteristics (continued) Typical values represent the most likely parametric norm at TJ = 25C, and are provided for reference purposes only. Unless otherwise stated the following conditions apply: VIN = 12 V, VVS = VIN, VOUT = VIN, VOFF = 0 V, CGATE= 47 nF, and TJ = 25C. PARAMETER tGATE(REV) Gate Capacitance Discharge Time at Forward to Reverse Transition See Figure 1 TEST CONDITIONS MIN TJ = 25C CGATE = 0 (2) CGATE = 47 nF (2) tGATE(OFF) CGATE = 47 nF (3) IGATE(OFF) Gate Pin Sink Current VGATE = VIN + 3 V VOUT > VIN + 100 mV t 10 ms VSD(REV) Reverse VSD Threshold VIN < VOUT VSD(REV) Reverse VSD Hysteresis 60 TJ = 25C 180 TJ = -40C to 125C VSD(REG) TJ = 25C 486 ns 2.8 TJ = -40C to 125C LM5050MK-1, LM5050Q1MK-1 1.8 TJ = -40C to 125C LM5050Q0MK-1 1.4 A -28 TJ = -40C to 125C -41 -16 TJ = 25C 10 TJ = 25C 19 mV mV TJ = -40C to 125C LM5050MK-1, LM5050Q1MK-1 1 37 TJ = -40C to 125C LM5050Q0MK-1 1 60 TJ = 25C VIN = 12 V VVS = VIN VIN - VOUT ns 350 TJ = 25C VIN = 5 V VVS = VIN VIN - VOUT UNIT 85 TJ = 25C TJ = 25C VIN - VOUT MAX 25 TJ = -40C to 125C CGATE = 10 nF (2) Gate Capacitance DischargeTime at OFF pin Low to High Transition See Figure 2 Regulated Forward VSD Threshold VIN > VOUT TYP 22 TJ = -40C to 125C LM5050MK-1, LM5050Q1MK-1 4.4 37 TJ = -40C to 125C LM5050Q0MK-1 4.4 60 mV OFF PIN VOFF(IH) OFF Input High Threshold Voltage VOUT = VIN-500 mV VOFF Rising VOFF(IL) OFF Input Low Threshold Voltage VOUT = VIN - 500 mV VOFF Falling VOFF OFF Threshold Voltage Hysteresis VOFF(IH) - VOFF(IL) IOFF OFF Pin Internal VOFF = 4.5 V Pulldown VOFF = 5 V (2) (3) 6 TJ = 25C 1.56 TJ = -40C to 125C 1.75 TJ = 25C V 1.4 TJ = -40C to 125C 1.1 TJ = 25C 155 TJ = 25C 5 TJ = -40C to 125C 3 TJ = 25C mV 7 A 8 Time from VIN-VOUT voltage transition from 200 mV to -500 mV until GATE pin voltage falls to VIN + 1 V. See Figure 1. Time from VOFF voltage transition from 0 V to 5 V until GATE pin voltage falls to VIN + 1 V. See Figure 2 Submit Documentation Feedback Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 LM5050-1, LM5050-1-Q1 www.ti.com SNVS629E - MAY 2011 - REVISED DECEMBER 2015 VIN - VOUT 200 mV VSD(REG) 0 mV VIN > VOUT VSD(REV) VIN < VOUT -500 mV VGATE - VIN tGATE(OFF) VGATE 1.0V 0.0V Figure 1. Gate OFF Timing for Forward to Reverse Transition VOFF 5.0V VOFF(IH) VOFF(IL) 0.0V VGATE - VIN tGATE(OFF) VGATE 1.0V 0.0V Figure 2. Gate OFF Timing for OFF Pin Low to High Transition Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 Submit Documentation Feedback 7 LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com 6.7 Typical Characteristics Unless otherwise stated: VVS = 12 V, VIN = 12 V, VOFF = 0 V, and TJ = 25C 8 Figure 3. IIN vs VIN Figure 4. IIN vs VIN Figure 5. IOUT vs VOUT Figure 6. IOUT vs VOUT Figure 7. IVS vs VVS Figure 8. IVS vs VVS Submit Documentation Feedback Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 LM5050-1, LM5050-1-Q1 www.ti.com SNVS629E - MAY 2011 - REVISED DECEMBER 2015 Typical Characteristics (continued) Unless otherwise stated: VVS = 12 V, VIN = 12 V, VOFF = 0 V, and TJ = 25C Figure 9. (VGATE - VIN) vs VIN, VVS = VOUT 26 Figure 10. (VGATE - VIN) vs VIN, VVS = VOUT 26 Vin Vout Vgate 24 22 22 VOLTS (V) VOLTS (V) Vin Vout Vgate 24 20 18 16 20 18 16 14 14 12 12 10 10 -5 0 5 10 15 20 TIME (5ms / DIV) 25 30 -50 0 50 100 150 TIME (50ns / DIV) 200 250 Figure 11. Forward CGATE Charge Time, CGATE = 47 nF Figure 12. Reverse CGATE Discharge, CGATE = 47 nF Figure 13. VGATE - VIN vs Temperature Figure 14. tGATE(REV) vs Temperature Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 Submit Documentation Feedback 9 LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com Typical Characteristics (continued) Unless otherwise stated: VVS = 12 V, VIN = 12 V, VOFF = 0 V, and TJ = 25C 10 Figure 15. OFF Pin Thresholds vs Temperature Figure 16. OFF Pin Pulldown vs Temperature Figure 17. CGATE Charge and Discharge vs OFF Pin Figure 18. OFF Pin, ON to OFF Transition Figure 19. OFF Pin, OFF to ON Transition Figure 20. GATE Pin vs (RDS(ON) x IDS) Submit Documentation Feedback Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 LM5050-1, LM5050-1-Q1 www.ti.com SNVS629E - MAY 2011 - REVISED DECEMBER 2015 7 Detailed Description 7.1 Overview Blocking diodes are commonly placed in series with supply inputs for the purpose of ORing redundant power sources and protecting against supply reversal. The LM5050 replaces diodes in these applications with an NMOSFET to reduce both the voltage drop and power loss associated with a passive solution. At low input voltages, the improvement in forward voltage loss is readily appreciated where headroom is tight, as shown in Figure 2. The LM5050 operates from 5 V to 75 V and it can withstand an absolute maximum of 100 V without damage. A 12-V or 15-A ideal diode application is shown in Figure 24. Several external components are included in addition to the MOSFET, Q1. Ideal diodes, like their non-ideal counterparts, exhibit a behavior known as reverse recovery. In combination with parasitic or intentionally introduced inductances, reverse recovery spikes may be generated by an ideal diode during an reverse current shutdown. D1, D2 and R1 protect against these spikes which might otherwise exceed the LM5050 100-V survival rating. COUT also plays a role in absorbing reverse recovery energy. Spikes and protection schemes are discussed in detail in the Short Circuit Failure of an Input Supply section. NOTE The OFF pin may be used to active the GATE pull down circuit and turn off the pass MOSFET, but it does not disconnect the load from the input because Q1's body diode is still present. If Vs is powered while IN is floating or grounded, then about 0.5mA will leak from the Vs pin into the IC and about 3mA will leak from the OUT pin into the IC. From this leakage, about 50 uA will flow out of the IN pin and the rest will flow to ground. This does not affect long term reliability of the IC, but may influence circuit design. See Reverse Input Voltage Protection With IQ Reduction for details on how to avoid this leakage current. Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 Submit Documentation Feedback 11 LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com 7.2 Functional Block Diagram INPUT LOAD IN GATE OUT 14V 30 A 30 mV + - 35 A 30 mV - +12V Charge Pump 2A MOSFET Off Reverse Comparator + Bias Circuitry VS OFF 5 A + 1.5V - GND LM5050- 1 7.3 Feature Description 7.3.1 IN, GATE, and OUT Pins When power is initially applied, the load current will flow from source to drain through the body diode of the MOSFET. Once the voltage across the body diode exceeds VSD(REG) then the LM5050-1 begins charging the MOSFET gate through a 32 A (typical) charge pump current source . In forward operation, the gate of the MOSFET is charged until it reaches the clamping voltage of the 12-V GATE to IN pin Zener diode internal to the LM5050-1. The LM5050-1 is designed to regulate the MOSFET gate-to-source voltage. If the MOSFET current decreases to the point that the voltage across the MOSFET falls below the VSD(REG) voltage regulation point of 22 mV (typical), the GATE pin voltage will be decreased until the voltage across the MOSFET is regulated at 22 mV. If the source-to-drain voltage is greater than the VSD(REG) voltage, the gate-to-source voltage will increase and eventually reach the 12-V GATE to IN pin Zener clamp level. 12 Submit Documentation Feedback Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 LM5050-1, LM5050-1-Q1 www.ti.com SNVS629E - MAY 2011 - REVISED DECEMBER 2015 Feature Description (continued) If the MOSFET current reverses, possibly due to failure of the input supply, such that the voltage across the LM5050-1 IN and OUT pins is more negative than the VSD(REV) voltage of -28 mV (typical), the LM5050-1 will quickly discharge the MOSFET gate through a strong GATE to IN pin discharge transistor. If the input supply fails abruptly, as would occur if the supply was shorted directly to ground, a reverse current will temporarily flow through the MOSFET until the gate can be fully discharged. This reverse current is sourced from the load capacitance and from the parallel connected supplies. The LM5050-1 responds to a voltage reversal condition typically within 25 ns. The actual time required to turn off the MOSFET will depend on the charge held by the gate capacitance of the MOSFET being used. A MOSFET with 47 nF of effective gate capacitance can be turned off in typically 180 ns. This fast turnoff time minimizes voltage disturbances at the output, as well as the current transients from the redundant supplies. 7.3.2 VS Pin The LM5050-1 VS pin is the main supply pin for all internal biasing and an auxiliary supply for the internal gate drive charge pump. For typical LM5050-1 applications, where the input voltage is above 5 V, the VS pin can be connected directly to the OUT pin. In situations where the input voltage is close to, but not less than, the 5 V minimum, it may be helpful to connect the VS pin to the OUT pin through an RC Low-Pass filter to reduce the possibility of erratic behavior due to spurious voltage spikes that may appear on the OUT and IN pins. The series resistor value should be low enough to keep the VS voltage drop at a minimum. A typical series resistor value is 100 . The capacitor value should be the lowest value that produces acceptable filtering of the voltage noise. If Vs is powered while IN is floating or grounded, then about 0.5 mA will leak from the Vs pin into the IC and about 3mA will leak from the OUT pin into the IC. From this leakage, about 50 uA will flow out of the IN pin and the rest will flow to ground. This does not affect long term reliability of the IC, but may influence circuit design. See Reverse Input Voltage Protection With IQ Reduction for details on how to avoid this leakage current. Alternately, it is possible to operate the LM5050-1 with VIN value as low as 1 V if the VS pin is powered from a separate supply. This separate VS supply must be from 5 V and 75 V. See Figure 27. 7.3.3 OFF Pin The OFF pin is a logic level input pin that is used to control the gate drive to the external MOSFET. The maximum operating voltage on this pin is 5.5 V. When the OFF pin is high, the MOSFET is turned off (independent of the sensed IN and OUT voltages). In this mode, load current will flow through the body diode of the MOSFET. The voltage difference between the IN pin and OUT pins will be approximately 700 mV if the MOSFET is operating normally through the body diode. The OFF pin has an internal pulldown of 5 A (typical). If the OFF function is not required the pin may be left open or connected to ground. 7.4 Device Functional Modes 7.4.1 ON/OFF Control Mode The MOSFET can be turned off by asserting the OFF pin high. This mode only disables the MOSFET, but VOUT is still available through the body diode of the MOSFET. 7.4.2 External Power Supply Mode The Vs pin of the LM5050 can be operated from 5 V to 75 V as the bias input supply. In this mode VIN voltage can be as low as 1 V, as shown in Figure 27. Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 Submit Documentation Feedback 13 LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI's customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information Systems that require high availability often use multiple, parallel-connected redundant power supplies to improve reliability. Schottky OR-ing diodes are typically used to connect these redundant power supplies to a common point at the load. The disadvantage of using OR-ing diodes is the forward voltage drop, which reduces the available voltage and the associated power losses as load currents increase. Using an N-channel MOSFET to replace the OR-ing diode requires a small increase in the level of complexity, but reduces, or eliminates, the need for diode heat sinks or large thermal copper area in circuit board layouts for high power applications. PS1 CLOAD RLOAD PS2 Figure 21. OR-ing with Diodes The LM5050-1/-Q1 is a positive voltage (that is, high-side) OR-ing controller that will drive an external N-channel MOSFET to replace an OR-ing diode. The voltage across the MOSFET source and drain pins is monitored by the LM5050-1 at the IN and OUT pins, while the GATE pin drives the MOSFET to control its operation based on the monitored source-drain voltage. The resulting behavior is that of an ideal rectifier with source and drain pins of the MOSFET acting as the anode and cathode pins of a diode respectively. PS1 IN GATE OUT LM5050-1 VS GND CLOAD PS2 IN RLOAD GATE OUT LM5050-1 VS GND Figure 22. OR-ing With MOSFETs 14 Submit Documentation Feedback Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 LM5050-1, LM5050-1-Q1 www.ti.com SNVS629E - MAY 2011 - REVISED DECEMBER 2015 Application Information (continued) 8.1.1 MOSFET Selection The important MOSFET electrical parameters are the maximum continuous Drain current ID, the maximum Source current (that is, body diode) IS, the maximum drain-to-source voltage VDS(MAX), the gate-to-source threshold voltage VGS(TH), the drain-to-source reverse breakdown voltage V(BR)DSS, and the drain-to-source On resistance RDS(ON). The maximum continuous drain current, ID, rating must exceed the maximum continuous load current. The rating for the maximum current through the body diode, IS, is typically rated the same as, or slightly higher than the drain current, but body diode current only flows while the MOSFET gate is being charged to VGS(TH). Gate Charge Time = Qg / IGATE(ON) 1. The maximum drain-to-source voltage, VDS(MAX), must be high enough to withstand the highest differential voltage seen in the application. This would include any anticipated fault conditions. 2. The drain-to-source reverse breakdown voltage, V(BR)DSS, may provide some transient protection to the OUT pin in low voltage applications by allowing conduction back to the IN pin during positive transients at the OUT pin. 3. The gate-to-source threshold voltage, VGS(TH), should be compatible with the LM5050-1 gate drive capabilities. Logic level MOSFETs, with RDS(ON) rated at VGS(TH) at 5 V, are recommended, but sub-Logic level MOSFETs having RDS(ON) rated at VGS(TH) at 2.5 V, can also be used. 4. The dominate MOSFET loss for the LM5050-1 active OR-ing controller is conduction loss due to source-todrain current to the output load, and the RDS(ON) of the MOSFET. This conduction loss could be reduced by using a MOSFET with the lowest possible RDS(ON). However, contrary to popular belief, arbitrarily selecting a MOSFET based solely on having low RDS(ON) may not always give desirable results for several reasons: (a) Reverse transition detection. Higher RDS(ON) will provide increased voltage information to the LM5050-1 Reverse Comparator at a lower reverse current level. This will give an earlier MOSFET turnoff condition should the input voltage become shorted to ground. This will minimize any disturbance of the redundant bus. (b) Reverse current leakage. In cases where multiple input supplies are closely matched it may be possible for some small current to flow continuously through the MOSFET drain to source (that is, reverse) without activating the LM5050-1 Reverse Comparator. Higher RDS(ON) will reduce this reverse current level. (c) Cost. Generally, as the RDS(ON) rating goes lower, the cost of the MOSFET goes higher. 5. The dominate MOSFET loss for the LM5050-1 active OR-ing controller is conduction loss due to source-todrain current to the output load, and the RDS(ON) of the MOSFET. This conduction loss could be reduced by using a MOSFET with the lowest possible RDS(ON). However, contrary to popular belief, arbitrarily selecting a MOSFET based solely on having low RDS(ON) may not always give desirable results for several reasons: (a) Selecting a MOSFET with an RDS(ON) that is too large will result in excessive power dissipation. Additionally, the MOSFET gate will be charged to the full value that the LM5050-1 can provide as it attempts to drive the Drain to Source voltage down to the VSD(REG) of 22 mV typical. This increased Gate charge will require some finite amount of additional discharge time when the MOSFET needs to be turned off. (b) As a guideline, it is suggest that RDS(ON) be selected to provide at least 22 mV, and no more than 100 mV, at the nominal load current. (c) (22 mV / ID) RDS(ON) (100 mV / ID) (d) The thermal resistance of the MOSFET package should also be considered against the anticipated dissipation in the MOSFET to ensure that the junction temperature (TJ) is reasonably well controlled, because the RDS(ON) of the MOSFET increases as the junction temperature increases. 6. PDISS = ID2 x (RDS(ON)) 7. Operating with a maximum ambient temperature (TA(MAX)) of 35C, a load current of 10 A, and an RDS(ON) of 10 m, and desiring to keep the junction temperature under 100C, the maximum junction-to-ambient thermal resistance rating (JA) must be: (a) RJA (TJ(MAX) - TA(MAX))/(ID2 x RDS(ON)) (b) RJA (100C - 35C)/(10 A x 10 A x 0.01 ) (c) RJA 65C/W Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 Submit Documentation Feedback 15 LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com Application Information (continued) 8.1.2 Short Circuit Failure of an Input Supply An abrupt 0- short circuit across the input supply will cause the highest possible reverse current to flow while the internal LM5050-1 control circuitry discharges the gate of the MOSFET. During this time, the reverse current is limited only by the RDS(ON) of the MOSFET, along with parasitic wiring resistances and inductances. Worst case instantaneous reverse current would be limited to: ID(REV) = (VOUT - VIN) / RDS(ON) (1) The internal Reverse Comparator will react, and will start the process of discharging the Gate, when the reverse current reaches: ID(REV) = VSD(REV) / RDS(ON) (2) When the MOSFET is finally switched off, the energy stored in the parasitic wiring inductances will be transferred to the rest of the circuit. As a result, the LM5050-1 IN pin will see a negative voltage spike while the OUT pin will see a positive voltage spike. The IN pin can be protected by diode clamping the pin to GND in the negative direction. The OUT pin can be protected with a TVS protection diode, a local bypass capacitor, or both. In low voltage applications, the MOSFET drainto- source breakdown voltage rating may be adequate to protect the OUT pin (that is, VIN + V(BR)DSS(MAX) < 75 V ), but most MOSFET data sheets do not ensure the maximum breakdown rating, so this method should be used with caution. Parasitic Inductance Reverse Recovery Current Parasitic Inductance COUT IN LM5050-1 Shorted Input CLOAD GATE OUT GND VS Figure 23. Reverse Recovery Current Generates Inductive Spikes at VIN and VOUT pins. 8.2 Typical Applications 8.2.1 Typical Application With Input and Output Transient Protection Q1 SUM40N10-30 VIN 48V S CIN 1 PF 75V D1 SS16T3 VOUT D G IN GATE OUT R1 100: VS LM5050-1 OFF/ON OFF + COUT 22 PF 63V D2 SMBJ60A C1 0.1 PF 100V GND GND GND Figure 24. Typical Application With Input and Output Transient Protection Schematic 16 Submit Documentation Feedback Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 LM5050-1, LM5050-1-Q1 www.ti.com SNVS629E - MAY 2011 - REVISED DECEMBER 2015 Typical Applications (continued) 8.2.1.1 Design Requirements Table 1 shows the parameters for Figure 24 Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Minimum Input Voltage, VINMIN 6V Maximum Input Voltage, VINMax 50 V Output Current Range, IOUT 0 to 15 A Ambient Temperature Range, TA 0C to 50C 8.2.1.2 Detailed Design Procedure The following design procedure can be used to select component values for the LM5050-1. 8.2.1.2.1 Power Supply Components (R1 C1,) Selection The LM5050-1 VS pin is the main supply pin for all internal biasing and an auxiliary supply for the internal gate drive charge pump. The series resistor (R1) value should be low enough to keep the VS voltage drop at a minimum. A typical series resistor value is 100 . The capacitor value (0.1 uF typical) should be the lowest value that produces acceptable filtering of the voltage noise. 8.2.1.2.2 MOSFET (Q1) Selection The MOSFET (Q1) selection procedure is explained in detail in MOSFET Selection. The MOSFET used in the design example is SUM40N10-30-E3. 8.2.1.2.3 D1 and D2 Selection for Inductive Kick-Back Protection Diode D1 and capacitor C1 and diode D2 and capacitor C2 in the Figure 27 serve as inductive kick-back protection to limit negative transient voltage spikes generated on the input when the input supply voltage is abruptly shorted to zero volts. As a result, the LM5050-1 IN pin will see a negative voltage spike while the OUT pin will see a positive voltage spike. The IN pin can be protected by schottky diode (D1) clamping the pin to GND in the negative direction, similarly the OUT pin should be protected with a TVS protection diode (D1), or with a local bypass capacitor, or both. D1 is selected as 1-A, 60-V Schottky Barrier Rectifier (SS16T3G) and D2 is the 60 V, TVS (SMBJ60A-13-F). 8.2.1.3 Application Curves Figure 25. Forward voltage (VIN-VOUT) Drop Reduces When Gate is Enabled (VIN = 12 V) Figure 26. Forward Voltage (VIN-VOUT) Drop Increases When Gate is Disabled (VIN = 12 V) Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 Submit Documentation Feedback 17 LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com 8.2.2 Using a Separate VS Supply for Low Vin Operation In some applications, it is desired to operate LM5050-1 from low supply voltage. The LM5050-1 can operate with a 1-V rail voltage, provided its VS pin is biased from 5 V to 75 V. The detail of such application is depicted in Figure 27. VBIAS 5.0V to 75V GND Q1 VIN VOUT 1V to 75V C1 1.0 PF 100V R1 100 D1 IN GATE OUT VS LM5050-1 Off/On C3 0.1 PF 100V OFF GND + C2 22 PF 100V D2 TVS 82V GND GND Figure 27. Using a Separate vs Supply for Low Vin Operation Schematic 8.2.3 ORing of Two Power Sources CLOAD PS1 IN GATE OUT RLOAD LM5050-1 VS GND COUT PS2 IN GATE OUT LM5050-1 VS GND Figure 28. ORing of Two Power Sources 18 Submit Documentation Feedback Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 LM5050-1, LM5050-1-Q1 www.ti.com SNVS629E - MAY 2011 - REVISED DECEMBER 2015 8.2.4 Reverse Input Voltage Protection With IQ Reduction If Vs is powered while IN is floating or grounded, then about 0.5 mA will leak from the Vs pin into the IC and about 3 mA will leak from the OUT pin into the IC. From this leakage, about 50 uA will flow out of the IN pin and the rest will flow to ground. This does not affect long term reliability of the IC, but may influence circuit design. In battery powered applications, whenever LM5050-1 functionality is not needed, the supply to the LM5050-1 can be disconnected by turning "OFF" Q2, as shown in Figure 29. This disconnects the ground path of the LM5050-1 and eliminates the current leakage from the battery. The quiescent current of LM5050-1 can be also reduced by disconnecting the supply to VS pin, whenever LM5050-1 function is not need. Q1 SUM40N10-30 VIN 48V VOUT IN GATE OUT VS D1 LM5050-1 SS16T3 CIN 1uF 75V R1 100 Cout GND 22uF 63V D2 BAS40-7-F D3 SS16T3 D4 SMBJ60A C1 0.1F 100V Q2 NTR5198NLT3G ON/OFF Control GND GND Figure 29. Reverse Input Voltage Protection With IQ Reduction Schematic 8.2.5 Basic Application With Input Transient Protection Q1 SUM40N10-30 VIN 5.0V to 75V S CIN 1 PF 100V D1 B180-13-F VOUT D G IN GATE OUT VS LM5050-1 OFF OFF/ON GND GND GND Figure 30. Basic Application With Input Transient Protection Schematic Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 Submit Documentation Feedback 19 LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com 8.2.6 48-V Application With Reverse Input Voltage (VIN = -48 V) Protection Q1 SUM40N10-30 VIN 48V S CIN 1 PF 75V VOUT D D1 SS16T3 G IN GATE R1 100: OUT VS LM5050-1 OFF GND + COUT 22 PF 63V D2 SMBJ60A C1 0.1 PF 100V D3 SS16T3 GND GND Figure 31. 48-V Application With Reverse Input Voltage (VIN = -48 V) Protection Schematic 8.2.6.1 Application Curves Figure 32. Operation With Positive Polarity Input With (VIN = 25 V) 20 Submit Documentation Feedback Figure 33. Operation With Negative polarity Input With (VIN = -25 V) Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 LM5050-1, LM5050-1-Q1 www.ti.com SNVS629E - MAY 2011 - REVISED DECEMBER 2015 9 Power Supply Recommendations When the LM5050-1/-Q1 shuts off the external MOSFET, transient voltages will appear on the input and output due to reverse recovery, as discussed in Short Circuit Failure of an Input Supply.To prevent LM5050-1 and surrounding components from damage under the conditions of a direct input short circuit, it is necessary to clamp the negative transient at IN, and OUT pins with TVS. 10 Layout 10.1 Layout Guidelines The typical PCB layout for LM5050-1/-Q1 is shown in Figure 34. TI recommends connecting the IN, Gate and OUT pins close to the source and drain pins of the MOSFET. Keep the traces of the MOSFET drain wide and short to minimize resistive losses. Place surge suppressors (D1 and D4) components as shown in the example layout of LM5050-1 in Layout Example. 10.2 Layout Example R1 D IN OFF LM5050-1 S D1 CIN GND VOUT VIN D4 COUT C1 G VS OUT GND Gate Figure 34. Typical Layout Example With D2PAK N-MOSFET Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 Submit Documentation Feedback 21 LM5050-1, LM5050-1-Q1 SNVS629E - MAY 2011 - REVISED DECEMBER 2015 www.ti.com 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation Achieving Stable VGS Using LM5050-1 with Low Current and Noisy Input Supply, SLVA684 11.2 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 2. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY LM5050-1 Click here Click here Click here Click here Click here LM5050-1-Q1 Click here Click here Click here Click here Click here 11.3 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2ETM Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.4 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.5 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.6 Glossary SLYZ022 -- TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 22 Submit Documentation Feedback Copyright (c) 2011-2015, Texas Instruments Incorporated Product Folder Links: LM5050-1 LM5050-1-Q1 PACKAGE OPTION ADDENDUM www.ti.com 28-Feb-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (C) Device Marking (4/5) LM5050MK-1/NOPB ACTIVE SOT-23-THIN DDC 6 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SZHB LM5050MKX-1/NOPB ACTIVE SOT-23-THIN DDC 6 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SZHB LM5050Q0MK-1/NOPB ACTIVE SOT-23-THIN DDC 6 1000 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 150 SL5B LM5050Q0MKX-1/NOPB ACTIVE SOT-23-THIN DDC 6 3000 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 150 SL5B LM5050Q1MK-1/NOPB ACTIVE SOT-23-THIN DDC 6 1000 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 SP3B LM5050Q1MKX-1/NOPB ACTIVE SOT-23-THIN DDC 6 3000 Green (RoHS & no Sb/Br) SN Level-1-260C-UNLIM -40 to 125 SP3B (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 28-Feb-2017 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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OTHER QUALIFIED VERSIONS OF LM5050-1, LM5050-1-Q1 : * Catalog: LM5050-1 * Automotive: LM5050-1-Q1 NOTE: Qualified Version Definitions: * Catalog - TI's standard catalog product * Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 3-Mar-2017 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) LM5050MK-1/NOPB SOT23-THIN DDC 6 1000 178.0 8.4 LM5050MKX-1/NOPB SOT23-THIN DDC 6 3000 178.0 LM5050Q0MK-1/NOPB SOT23-THIN DDC 6 1000 LM5050Q0MKX-1/NOPB SOT23-THIN DDC 6 LM5050Q1MK-1/NOPB SOT23-THIN DDC LM5050Q1MKX-1/NOPB SOT23-THIN DDC 3.2 3.2 1.4 4.0 8.0 Q3 8.4 3.2 3.2 1.4 4.0 8.0 Q3 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 6 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 Pack Materials-Page 1 W Pin1 (mm) Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 3-Mar-2017 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5050MK-1/NOPB SOT-23-THIN DDC 6 1000 210.0 185.0 35.0 LM5050MKX-1/NOPB SOT-23-THIN DDC 6 3000 210.0 185.0 35.0 LM5050Q0MK-1/NOPB SOT-23-THIN DDC 6 1000 210.0 185.0 35.0 LM5050Q0MKX-1/NOPB SOT-23-THIN DDC 6 3000 210.0 185.0 35.0 LM5050Q1MK-1/NOPB SOT-23-THIN DDC 6 1000 210.0 185.0 35.0 LM5050Q1MKX-1/NOPB SOT-23-THIN DDC 6 3000 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated (TI) reserves the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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