NESG250134FB-T1 - NEC Electronics

FEATURES

• This product is suitable for medium output power (800 mW) amplification

O (1dB) = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz

O (1dB) = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz

• MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz

• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V

• 3-pin power minimold (34 package)

ORDERING INFORMATION

Part Number Quantity Supplying Form

NESG250134 25 pcs (Non reel) • 12 mm wide embossed taping

NESG250134-T1 1 kpcs/reel • Pin 2 (Emitter) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit

Collector to Base Voltage VCBO 20 V

Collector to Emitter Voltage VCEO 9.2 V

Emitter to Base Voltage VEBO 2.8 V

Collector Current IC 500 mA

Total Power Dissipation Ptot Note 1.5 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg −65 to +150 °C

Note Mounted on 3.8 × 9.0 cm, t = 0.8 mm glass epoxy PCB

PRELIMINARY DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON GERMANIUM RF TRANSISTOR

NESG250134

NPN SiGe RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (800 mW)

3-PIN POWER MINIMOLD (34 PACKAGE)

Document No. PU10422EJ01V0DS (1st edition)

Date Published January 2004 CP(K)

Printed in Japan 

NEC Compound Semiconductor Devices 2003, 2004

THERMAL RESISTANCE (TA = +25°C)

Parameter Symbol Ratings Unit

Termal Resistance from Junction to

Ambient Note Rthj-a 80 °C/W

Note Mounted on 3.8 × 9.0 cm, t = 0.8 mm glass epoxy PCB

RECOMMENDED OPERATING RANGE (TA = +25°C)

Parameter Symbol MIN. TYP. MAX. Unit

Collector to Emitter Voltage VCE − 3.6 4.5 V

Collector Current IC − 400 500 mA

Input Power Note Pin − 12 17 dBm

Note Input power under conditions of VCE ≤ 4.5 V, f = 460 MHz

Preliminary Data Sheet PU10422EJ01V0DS

NESG250134

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics

Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 1

Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA − − 1

DC Current Gain hFE Note 1 VCE = 3 V, IC = 100 mA 80 120 180 −

RF Characteristics

Gain Bandwidth Product fT VCE = 3.6 V, IC = 100 mA, f = 460 MHz − 10 − GHz

Insertion Power Gain S21e2 VCE = 3.6 V, IC = 100 mA, f = 460 MHz − 19 − dB

Maximum Satble Gain MSG Note 2 VCE = 3.6 V, IC = 100 mA, f = 460 MHz − 23 − dB

Linner gain (1) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

f = 460 MHz, Pin = 0 dBm 16 19 − dB

Linner gain (2) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

f = 900 MHz, Pin = 0 dBm − 16 − dB

Output Power (1) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

f = 460 MHz, Pin = 15 dBm 27 29 − dBm

Output Power (2) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

f = 900 MHz, Pin = 20 dBm − 29 − dBm

Collector Efficiency (1)

c VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

f = 460 MHz, Pin = 15 dBm − 60 − %

Collector Efficiency (2)

c VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

f = 900 MHz, Pin = 20 dBm − 60 − %

Notes 1. Pulse measurement: PW ≤ 350

s, Duty Cycle ≤ 2%

2. MSG =

hFE CLASSIFICATION

Rank FB

Marking SN

hFE Value 80 to 180

S21

S12

Preliminary Data Sheet PU10422EJ01V0DS 3

NESG250134

PACKAGE DIMENSIONS

3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT: mm)

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

1.5±0.1

0.41

+0.03

–0.06

4.5±0.1

0.42±0.060.42±0.06

1.6±0.2

3.0

1.5

2.5±0.1

4.0±0.25

0.8 MIN.

0.47±0.06

Preliminary Data Sheet PU10422EJ01V0DS

NESG250134

M8E 00. 4 - 0110

The information in this document is current as of January, 2004. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all

products and/or types are available in every country. Please check with an NEC sales representative

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•

Preliminary Data Sheet PU10422EJ01V0DS 5

NESG250134

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)

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For further information, please contact

NESG250134