GSOT03C to GSOT36C Vishay Semiconductors ESD Protection Diode Array Features * Transient protection for data lines as per IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (cone3 tact) IEC 61000-4-5 (Lightning) see IPPM below * Devices have dual diodes, which can protect two unidirectional lines with pin 3 used as a common anode connection, or a single bidirectional line between pins 1 and 2. * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 1 2 18070 Mechanical Data Case: SOT-23 Plastic case Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 C/10 sec. at terminals Weight: approx. 8.8 mg Packaging Codes/Options: GS18 - 10 k per 13 " reel (8 mm tape), 10 k/box GS08 - 3 k per 7 " reel (8 mm tape), 15 k/box Absolute Maximum Ratings Ratings at 25 C, ambient temperature unless otherwise specified Symbol Value Unit Peak power dissipation1) Parameter 8/20 s pulse Test condition PPK 300 W Forward surge current 8.3 ms single half sine-wave IFSM 7 A Symbol Value Unit Tstg, TJ - 55 to + 150 C 1) Non-repetitive current pulse and derated above TA = 25 C, for GSOT03C, GSOT04C, the peak power dissipation is 270 W Thermal Characteristics Ratings at 25 C, ambient temperature unless otherwise specified Parameter Operation and storage temperature range Document Number 85824 Rev. 1.2, 29-Apr-05 Test condition www.vishay.com 1 GSOT03C to GSOT36C Vishay Semiconductors Electrical Characteristics TJ = 25 C unless otherwise noted Part Number 1) Device Marking Code Rated Stand-off Voltage Minimum Breakdown Voltage Pin 1-3 or 2-3 Pin 1-3 or 2-3 Maximum Clamping Voltage Pin 1-2 or 2-1 (Pin 3 = nc) 1-2 or 2-1 (Pin 3 = nc) Maximum Pulse Peak Current Maximum Leakage Current Maximum Capacitance Pin 1-2 or 2-1 (Pin 3 = nc) Pin 1-3 or 2-3 Pin 1-3 or 2-3 @ VWM @ 0 V, 1 MHz @ 1 mA @ IPP = 1 A1) @ IPP = 5 A1) tp = 8/20 s VWM VBR VC IPPM ID C V V V A A pF GSOT03C 03C 3.3 4.5 7.0 9.0 18 125 600 GSOT04C 04C 4.0 5.0 8.5 10.5 17 125 600 GSOT05C 05C 5.0 6.0 9.8 12.5 17 100 400 GSOT08C 08C 8.0 8.5 13.4 15.0 15 10 350 GSOT12C 12C 12.0 13.3 19.0 28.0 12 2 150 GSOT15C 15C 15.0 16.7 24.0 35.0 10 1 100 GSOT24C 24C 24.0 26.7 43.0 60.0 5 1 63 GSOT36C 36C 36.0 40 60.0 75.0 2 1 60 8/20 s waveform used (see figure 2) Typical Characteristics (Tamb = 25 C unless otherwise specified) 110 1000 300W, 8/20 s waveshape 100 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (W) 10000 Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM 100 90 80 70 60 50 td = IPP 2 40 30 20 10 10 0 0.1 1.0 17476 10 100 1000 10000 td - Pulse Duration ( s ) Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time www.vishay.com 2 17477 0 5 10 15 20 25 30 t - Time ( s ) Figure 2. Pulse Waveform Document Number 85824 Rev. 1.2, 29-Apr-05 GSOT03C to GSOT36C Vishay Semiconductors 100 Peak Pulse Power 8/20 s % Of Rated Power 80 60 40 20 Average Power 0 25 0 50 75 125 100 150 TL - Lead Temperature C 17478 Figure 3. Power Derating 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) 3 1 0.95 (.037) 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 Document Number 85824 Rev. 1.2, 29-Apr-05 www.vishay.com 3 GSOT03C to GSOT36C Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85824 Rev. 1.2, 29-Apr-05