GSOT03C to GSOT36C
Document Number 85824
Rev. 1.2, 29-Apr-05
Vishay Semiconductors
www.vishay.com
1
12
3
18070
ESD Protection Diode Array
Features
• Transient protection for data lines as per
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (con-
tact)
IEC 61000-4-5 (Lightning) see IPPM below
• Devices have dual diodes, which can protect
two unidirectional lines with pin 3 used
as a common anode connection, or a single
bidirectional line between pins 1 and 2.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOT-23 Plastic case
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 - 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 - 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
1) Non-repetitive current pulse and derated above TA = 25 °C,
for GSOT03C, GSOT04C, the peak power dissipation is 270 W
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter Test condition Symbol Value Unit
Peak power dissipation1) 8/20 μs pulse PPK 300 W
Forward surge current 8.3 ms single half sine-wave IFSM 7A
Parameter Test condition Symbol Value Unit
Operation and storage
temperature range
Tstg, TJ- 55 to + 150 °C
e3
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Document Number 85824
Rev. 1.2, 29-Apr-05
GSOT03C to GSOT36C
Vishay Semiconductors
Electrical Characteristics
TJ = 25 °C unless otherwise noted
1) 8/20 μs waveform used (see figure 2)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Part Number Device
Marking
Code
Rated
Stand-off
Voltage
Minimum
Breakdown
Voltage
Maximum
Clamping
Voltage
Maximum
Pulse Peak
Current
Maximum
Leakage
Current
Maximum
Capacitance
Pin
1-3 or 2-3
Pin
1-3 or 2-3
Pin
1-2 or 2-1
(Pin 3 = nc)
1-2 or 2-1
(Pin 3 = nc)
Pin
1-2 or 2-1
(Pin 3 = nc)
Pin
1-3 or 2-3
Pin
1-3 or 2-3
@ 1 mA @ IPP = 1 A1) @ IPP = 5 A1) tp = 8/20 μs@ VWM @ 0 V, 1 MHz
VWM VBR VCIPPM IDC
V V V A μApF
GSOT03C 03C 3.3 4.5 7.0 9.0 18 125 600
GSOT04C 04C 4.0 5.0 8.5 10.5 17 125 600
GSOT05C 05C 5.0 6.0 9.8 12.5 17 100 400
GSOT08C 08C 8.0 8.5 13.4 15.0 15 10 350
GSOT12C 12C 12.0 13.3 19.0 28.0 12 2 150
GSOT15C 15C 15.0 16.7 24.0 35.0 10 1 100
GSOT24C 24C 24.0 26.7 43.0 60.0 5 1 63
GSOT36C 36C 36.0 40 60.0 75.0 2 1 60
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
P
PPM
- Peak Pulse Power (W)
100
1000
10000
0.1 1.0 10
td - Pulse Duration ( μs)
100 1000 10000
10
300W, 8/20
μ
s waveshape
17476
Figure 2. Pulse Waveform
0
50
100
90
80
70
60
40
30
20
10
110
I
PPM
- Peak Pulse Current, % I
RSM
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
0105 15 20 30
25
t - Time ( μs)
t
d
=I
PP
2
17477
GSOT03C to GSOT36C
Document Number 85824
Rev. 1.2, 29-Apr-05
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Figure 3. Power Derating
T
L
- Lead Temperature °C
0
20
40
60
80
100
% Of Rated Power
05025 75 100 125 150
Average Power
Peak Pulse Power
8/20 μs
17478
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
12
3
17418
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
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Document Number 85824
Rev. 1.2, 29-Apr-05
GSOT03C to GSOT36C
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
