MMBTA13
MMBTA14
NPN Darlington
Amplifier Transistor
SOT-23
Suggested Solder
Pad Layout
Features
Operating And Storage Temperatures –55OC to +150OC
RθJA is 556OC/W (Mounted on FR-5 PCB 1.0” x0.75” x0.062” )
Capable of 225mWatts of Power Dissipation
Marking: MMBTA13 ---K2D; MMBTA14 ---K3D
DIMENSIONS
INCHES MM
DIM MI N MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
Electrical Characteristics @ 25O
C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(I
C=100uAdc, IB=0)
30 Vdc
V(BR)CBO Collector-Base Breakdown Voltage 30 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage 10 Vdc
ICCollector Current-Continuous 300 mAdc
ICBO Collector Cutoff Current
(VCB=30Vdc, IE=0)
100 nAdc
IEBO Emitter Cutoff Current
(VEB=10Vdc, I
C=0)
100 nAdc
ON CHARACTERISTICS
hFE
MMBTA13
MMBTA14
MMBTA13
MMBTA14
DC Current Gain*
(I
C=10mAdc, VCE=5.0Vdc)
(I
C=150mAdc, VCE=1.0Vdc)
5000
10000
10000
20000
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=100mAdc, I
B=0.1mAdc) 1.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=100mAdc,VCE=5.0Vdc) 2.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTCurrent Gain-Bandwidth Product
(I
C=10mAdc, VCE=5.0Vdc, f=100MHz) 125 MHz
Cobo Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz) 8.0 pF
Cibo Input Capacitance
(VBE=0.5Vdc, IC
=0, f=1.0MHz) 15 pF
SWITCHING CHARACTERISTICS
td Delay Time (VCC=30Vdc, VBE=0.5Vdc 10 ns
tr Rise Time IC=150mAdc, IB1=15mAdc) 25 ns
ts Storage Time (VCC=30Vdc, I
C=150mAdc 225 ns
tf Fall Time IB1=IB2
=15mAdc) 60 ns
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950 .037
.950
K
A
B
C
D
EF
GH
J
Revision: A 2011/01/01
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20736 Marilla Street Chatsworth
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E
B
C
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Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (k)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (k)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS 0
IC = 1.0 mA
100 µA
10 µA
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 µA
10 µA
en, NOISE VOLTAGE (nV)
in, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10 µA
100 µA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 µA
100 µA
IC = 1.0 mA
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
MCC
MMBTA14
MMBTA13
Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
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Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (µA)
2.0
200Ăk
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 255C
C, CAPACITANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|hfe|, SMALL-SIGNAL CURRENT GAIN
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
Cobo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
VCE = 5.0 V
f = 100 MHz
TJ = 255C
100Ăk
70Ăk
50Ăk
30Ăk
20Ăk
10Ăk
7.0Ăk
5.0Ăk
3.0Ăk
2.0Ăk 7.0 10 20 30 50 70 100 200 300 500
TJ = 1255C
255C
-ā555C
VCE = 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
TJ = 255C
IC = 10 mA 50 mA 250 mA 500 mA
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
-ā1.0
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6 7.0 10 20 30 50 70 100 200 300 500
VBE(sat) @ IC/IB = 1000
RV, TEMPERATURE COEFFICIENTS (mV/ C)5
θ
TJ = 255C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
-ā2.0
-ā3.0
-ā4.0
-ā5.0
-ā6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
255C TO 1255C
-ā555C TO 255C
*RqVC FOR VCE(sat)
qVB FOR VBE
255C TO 1255C
-ā555C TO 255C
*APPLIES FOR IC/IB 3 hFE/3.0
MCC
MMBTA14
MMBTA13
Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
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Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0Ăk 2.0Ăk 5.0Ăk 10Ăk
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0Ăk
0.4
700
500
300
200
100
70
50
30
20
10 0.6 1.0 2.0 4.0 6.0 10 20 40
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
ZθJC(t) = r(t) RθJCąTJ(pk) - TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) RθJAąTJ(pk) - TA = P(pk) ZθJA(t)
1.0 ms
100 µs
TC = 25°C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PPPP
t1
1/f
DUTYĂCYCLE +t1Ăf +
t1
tP
PEAK PULSE POWER = PP
MCC
MMBTA14
MMBTA13
Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
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Revision: A 2011/01/01
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Ordering Information :
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make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components
Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it
convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all
risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are
represented on our website, harmless against all damages.
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MCC's products are not authorized for use as critical components in life support devices or systems without the express written
approval of Micro Commercial Components Corporation.
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Device Packing
Part Number-TP
Tape&Reel;3Kpcs/Reel