CCD area image sensors
Front-illuminated FFT-CCDs for X-ray imaging
1
The S8980 is an FFT-CCD image sensor suitable for intra-oral X-ray imaging in dental diagnosis. The S8980 has 1.5 mega (1500
× 1000) pixels, each of which is 20 × 20 m in size. The FOP (fi ber optic plate) used as an input window is as thin as 1.5 mm,
making high resolution as well as highly resistant to X-ray irradiation. The scintillator coated on the FOP is optimized to have high
X-ray sensitivity and high resolution (20 Lp/mm).
The S10810 is an easy-to-use X-ray imaging module using the S8980, with added functions such as a cable assembly and X-ray
trigger circuit.
Applications
Intra-oral X-ray imaging in dental diagnosis
General X-ray imaging
Non-destructive inspection
Features
X-ray monitoring photodiode incorporated
Resolution: 20 Lp/mm
1500 (H) × 1000 (V) pixel format
Pixel size: 20 × 20 μm
Coupled with FOS for X-ray imaging
100% fi ll factor
Low dark signal
Low readout noise
MPP operation
AC/DC X-ray source adapted
Compact size
High dynamic range: 12-bit
Long-term stability
For use under 100000 shots
(60 kVp, 30 mR X-ray irradiation)
www.hamamatsu.com
General ratings
Parameter S8980 S10810
CCD structure Full frame transfer
Fill factor 100 %
Cooling Non-cooled
Number of pixels 1508 (H) × 1002 (V)
Number of active pixels 1500 (H) × 1000 (V)
Pixel size 20 (H) × 20 (V) m
Active area 30 (H) × 20 (V) mm
Vertical clock phase 2 phases
Horizontal clock phase 2 phases
Output circuit Emitter follower without load resistance
Dimensions 35.5 (H) × 23.2 (V) mm 41.0 (H) × 26.4 (V) mm
Reliability 100000 shots at 60 kVp, 30 mR
Window FOS (scintillator on 1.5 mm FOP)
S8980 S10810
These products are components for incorporation into medical
device.
2
Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Storage temperature Tstg -20 - +70 °C
Operating temperature Topr 0 - +40 °C
OD voltage VOD -0.5 - +20 V
RD voltage VRD -0.5 - +18 V
SG voltage VSG -15 - +15 V
OG voltage VOG -15 - +15 V
RG voltage VRG -15 - +15 V
TG voltage VTG -15 - +15 V
Vertical clock voltage VP1V, VP2V -15 - +15 V
Horizontal clock voltage VP1H, VP2H -15 - +15 V
Vcc voltage Vcc 0 - +7 V
Operating conditions (MPP mode, Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 12 15 - V
Reset drain voltage VRD 12 13 14 V
Output gate voltage VOG -0.5 2 5 V
Substrate voltage Vss - 0 - V
Vertical shift register
clock voltage
High VP1VH, VP2VH 036V
Low VP1VL, VP2VL -9 -8 -7 V
Horizontal shift register
clock voltage
High VP1HH, VP2HH 036V
Low VP1HL, VP2HL -9 -8 -7 V
Summing gate voltage High VsGH 036V
Low VsGL -9 -8 -7 V
Reset gate voltage High VRGH 036V
Low VRGL -9 -8 -7 V
Transfer gate voltage High VTGH 036V
Low VTGL -9 -8 -7 V
+5 V power supply voltage Vcc 4.75 5 5.25 V
CCD area image sensors S8980, S10810
Electrical characteristics (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Signal output frequency*1fc - 1 - MHz
Vertical shift register capacitance CP1v, CP2v - 60000 - pF
Horizontal shift register
capacitance
S8980 CP1H, CP2H - 350 - pF
S10810 - 550 -
Summing gate capacitance S8980 CsG-20-pF
S10810 - 220 -
Reset gate capacitance S8980 CRG -20-pF
S10810 - 220 -
Transfer gate capacitance S8980 CTG - 250 - pF
S10810 - 450 -
Charge transfer effi ciency*2CTE 0.99995 0.99998 - -
DC output level*3VOut 5 8 11 V
Output impedance*3Zo - 500 - Ω
Power dissipation*3 *4P - 75 - mW
+5 V power supply current S8980 Icc -1-
mA
S10810 - 2 -
*1: In case of the S8980, maximum frequency strongly depends on a peripheral circuit and cable length.
*2: Measured at half of the full well capacity. CTE is defi ned per pixel.
*3: VOD=15 V
*4: Power dissipation of the on-chip amplifi er
3
Electrical and optical characteristics (Ta=25 °C, VOD=15 V, unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Full well capacity
Vertical
Fw
100 200 -
ke-
Horizontal - 300 -
Summing - 600 -
CCD node sensitivity*5Sv 1.0 1.4 - V/e-
Dark current (MPP mode)*6DS - 250 2500 e-/pixel/s
Readout noise*7Ta=25 °C Nr -90-
e- rms
Ta=-40 °C - 60 -
Dynamic range*8DR - 3333 - -
X-ray response non-uniformity*9 *10 XRNU - ±10 ±30 %
Blemish*11
Point
defects*12
White spots
-
--20
-
Black spots - - 20
Cluster defects*13 --3
Column defects*14 --1
X-ray resolution*9R 15 20 - Lp/mm
*5: VOD=15 V, RL (load resistance of emitter follower)=1 kΩ
*6: Dark signal doubles for every 5 to 7 °C.
*7: Operating frequency is 1 MHz.
*8: Dynamic range = Full well capacity / Readout noise
*9: X-ray irradiation of 60 kVp, measured at half of the full well capacity
*10: XRNU (%) = Noise / Signal × 100
Noise: Fixed pattern noise (peak to peak)
In the range that excludes 5 pixels from edges to the center at every position
*11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information.
*12: White spots > 10 times of Max. Dark signal (2500 e-/pixel/s)
Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity
*13: Continuous 2 to 9 point defects
CCD area image sensors S8980, S10810
4
Pixel format
Left ← Horizontal direction → Right
Blank Optical
black Isolation Effective Isolation Optical
black Blank
2 2 1 1500 1 0 2
Top ← Vertical direction → Bottom
Isolation Effective Isolation
1 1000 1
KMPDC0163EA
Device structure
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Parameter Symbol Min. Typ. Max. Unit
P1V, P2V, TG Pulse width*15 tpwv 30 60 - s
Rise and fall times tprv, tpfv 200 - - ns
P1H, P2H
Pulse width tpwh 100 500 - ns
Rise and fall times*15 tprh, tpfh 5 - - ns
Duty ratio - - 50 - %
SG
Pulse width tpws 100 500 - ns
Rise and fall times tprs, tpfs 3 - - ns
Duty ratio - - 50 - %
RG Pulse width tpwr 10 50 - ns
Rise and fall times tprr, tpfr 3 - - ns
TG-P1H Overlap time tovr 18 36 - s
*15: The clock pulses should be overlapped at 50 % of maximum amplitude.
Timing chart
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Take due care of EMC and ESD when connected to 0 V reference and the ground.
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Dimensional outlines (unit: mm)
S8980
S10810
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CCD sensor
Pin connections
S8980
Pin no. Symbol Description Remark
1 Vcc Analog power +5 V
2 Trigger A Trigger A output
3 SG Summing gate
4 P2H CCD horizontal register clock-2
5 P1H CCD horizontal register clock-1
6 Reserve Should be opened
7 RG Reset gate
8 RD Reset drain
9 OD Output transistor drain
10 OUT Signal output
11 GND Ground
12 TG Transfer gate
13 P2V CCD vertical register clock-2
14 P1V CCD vertical register clock-1
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Pin no. Symbol Description Remark
1 GND Ground
2 Vcc +5 V power supply
3 SG Summing gate Same timing as P2H
4 Trigger B Trigger B output
5 RG Reset gate
6NC
7 Reserve Should be opened
8NC
9 RD Reset drain
10 NC
11 OD Output transistor drain
12 NC
13 OUT Sensor output
14 NC
15 GND Ground
16 NC
17 P1V CCD vertical register clock-1
18 Reserve Should be opened
19 Reserve Should be opened
20 P2H CCD horizontal register clock-2
21 NC
22 P1H CCD horizontal register clock-1
23 NC
24 GND Ground
25 NC
26 RD Reset drain
27 NC
28 OD Output transistor drain
29 NC
30 GND Ground
31 NC
32 OUT Sensor output
33 NC
34 P2V CCD vertical register clock-2
35 NC
36 TG Transfer gate Same timing as P2V
CCD area image sensors S8980, S10810
S10810
Cat. No. KMPD1123E02 Dec. 2010 DN
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10
· Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth
ring, in order to prevent electrostatic damage due to electrical charges from friction.
· Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
· Provide ground lines or ground connection with the work-fl oor, work-desk and work-bench to allow static electricity to discharge.
· Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of
damage that occurs.
This product is subject to use in an ordinary room environment such as several thousand lux in the intensity of illumination; excessive illumi-
nation during diagnosis with X-ray imaging may cause malfunction.
Precautions
Electrostatic countermeasures
Operating environment
