PNP Power Transistor Complementary Silicon Plastic Power Transistors Features: Designed for use in general purpose power amplifier and switching applications. * Collector-emitter sustaining voltage-VCEO (sus) = 100V (minimum). * Collector-emitter saturation voltage-VCE (sat) = 1.5V (maximum) at IC = 6.0A. * Current gain-bandwidth product fT = 3.0 MHz (minimum) at IC = 500mA. Dimensions Minimum Maximum PNP A 14.68 15.31 TIP42C B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Pin 1. Base. 2. Collector. 3. Emitter. 4. Collector (Case). 6 Ampere Complementary Silicon Power Transistors 40 to 100 Volts 65 Watts TO-220 Dimensions : Millimetres Maximum Ratings Characteristic Symbol TIP42C Unit Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 5 Collector Current - Continuous - Peak IC 6 10 Base Current IB 2 Total Power Dissipation at TC = 25C Derate above 25C PD 65 0.52 W W/C TJ, TSTG -65 to +150 C Operating and Storage Junction Temperature Range 100 V A http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <1> 08/04/11 V1.1 PNP Power Transistor Thermal Characteristics Characteristic Symbol Maximum Unit Thermal Resistance Junction to Case Rjc 1.92 C/W PD, Power Dissipation (Watts) Power Derating TC , Temperature (C) Electric Characteristics (TC = 25C unless otherwise noted) Characteristics Symbol Minimum Maximum Units VCEO (sus) 100 - V Collector Cut-off Current (VCE = 60V, IB = 0) ICEO - 0.7 Collector Cut-off Current (VCE = 100V, VEB = 0) ICES - 0.4 Emitter Cut-off Current (VEB = 5.0V, IC = 0) IEBO - 1.0 hFE 30 15 75 Collector-Emitter Saturation Voltage (IC = 6.0A, IB = 600mA) VCE (sat) - 1.5 Base-Emitter on Voltage (IC = 6.0A, VCE = 4.0V) VBE (on) - 2.0 Current Gain-Bandwidth Product (2) (IC = 500mA, VCE = 10V, fTEST = 1MHz) fT 3.0 - MHz Small Signal Current Gain (IC = 500mA, VCE = 10V, f = 1kHz) hfe 20 - - Off Characteristics Collector-Emitter Sustaining Voltage (1) (IC = 30mA, IB = 0) mA On Characteristics (1) DC Current Gain (IC = 0.3A, VCE = 4.0V) (IC = 0.3A, VCE = 4.0V) - V Dynamic Characteristics (1) Pulse Test: Pulse Width 300s, Duty Cycle 2.0%. (2) fT = | hfe |*fTEST http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <2> 08/04/11 V1.1 PNP Power Transistor Switching Time Test Circuit tr, tf 10ns Duty Cycle = 1.0% RB and RC Varied to Obtain Desired Current Levels D1 Must be Fast Recovery Type. eg: MBD5000 used Above IB = 100mA MSD6100 used Below IS = 100mA DC Current Gain t, Time (s) hFE, DC Current Gain Turn-on Time IC, Collector Current (Amperes) IC, Collector Current (Amperes) Active Region Safe Operating Area t, Time (s) IC, Collector Current (Amperes) Turn-off Time IC, Collector Current (Amperes) VCE, Collector Emitter Voltage (Volts) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <3> 08/04/11 V1.1 PNP Power Transistor There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e. the transistor must not be subjected to greater dissipation than curves indicate. The data of curve is base on TJ (PK) = 150C; TC is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (PK) 150C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Capacitances Capacitance (pF) VCE, Collector Emitter Voltage (Volts) Collector Saturation Region IB, Base Current (mA) VR, Reverse Voltage (Volts) "ON" Voltage Voltage (Volts) IC, Collector Current (A) Collector Cut-off Region IC, Collector Current (Amperes) VBE, Base-Emitter Voltage (Volts) Part Number Table Description Part Number PNP Power Transistor TIP42C Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. MULTICOMP is the registered trademark of the Group. @ Premier Farnell plc 2011. http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <4> 08/04/11 V1.1