PNP Power Transistor
Page <1> 08/04/11 V1.1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Features:
Designed for use in general purpose power amplifier and switching applications.
•Collector-emitter sustaining voltage-VCEO (sus) = 100V (minimum).
•Collector-emitter saturation voltage-VCE (sat) = 1.5V (maximum) at IC = 6.0A.
•Current gain-bandwidth product fT= 3.0 MHz (minimum) at IC = 500mA.
Dimensions : Millimetres
Complementary Silicon Plastic Power Transistors
Pin 1. Base.
2. Collector.
3. Emitter.
4. Collector (Case).
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Maximum Ratings
Characteristic Symbol TIP42C Unit
Collector-Emitter Voltage VCEO 100 VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5
Collector Current - Continuous
- Peak IC6
10 A
Base Current IB2
Total Power Dissipation at TC= 25°C
Derate above 25°C PD65
0.52 W
W/°C
Operating and Storage Junction
Temperature Range TJ, TSTG -65 to +150 °C
PNP
TIP42C
6 Ampere
Complementary Silicon
Power Transistors
40 to 100 Volts
65 Watts
TO-220
PNP Power Transistor
Page <2> 08/04/11 V1.1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
TC , Temperature (°C)
PD, Power Dissipation (Watts)
Power Derating
Thermal Characteristics
Electric Characteristics (TC= 25°C unless otherwise noted)
Characteristics Symbol Minimum Maximum Units
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 30mA, IB = 0) VCEO (sus) 100 - V
Collector Cut-off Current
(VCE = 60V, IB = 0) ICEO - 0.7
mA
Collector Cut-off Current
(VCE = 100V, VEB = 0) ICES - 0.4
Emitter Cut-off Current
(VEB = 5.0V, IC = 0) IEBO - 1.0
On Characteristics (1)
DC Current Gain
(IC = 0.3A, VCE = 4.0V)
(IC = 0.3A, VCE = 4.0V) hFE 30
15 75 -
Collector-Emitter Saturation Voltage
(IC = 6.0A, IB = 600mA) VCE (sat) - 1.5 V
Base-Emitter on Voltage
(IC = 6.0A, VCE = 4.0V) VBE (on) - 2.0
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC = 500mA, VCE = 10V, fTEST = 1MHz) fT3.0 - MHz
Small Signal Current Gain
(IC = 500mA, VCE = 10V, f = 1kHz) hfe 20 - -
(1) Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤ 2.0%.
(2) fT= | hfe |•fTEST
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.92 °C/W
PNP Power Transistor
Page <3> 08/04/11 V1.1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Switching Time Test Circuit
tr, tf ≤10ns
Duty Cycle = 1.0%
RBand RCVaried to Obtain Desired Current Levels
D1 Must be Fast Recovery Type. eg:
MBD5000 used Above IB= 100mA
MSD6100 used Below IS= 100mA
t, Time (µs)
Turn-on Time
IC, Collector Current (Amperes)
Active Region Safe Operating Area
IC, Collector Current (Amperes)
VCE, Collector Emitter Voltage (Volts)
DC Current Gain
hFE, DC Current Gain
IC, Collector Current (Amperes)
Turn-off Time
t, Time (µs)
IC, Collector Current (Amperes)
PNP Power Transistor
Page <4> 08/04/11 V1.1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe
operating area curves indicate IC-VCElimits of the transistor that must be observed for reliable operation i.e. the transistor must not be
subjected to greater dissipation than curves indicate.
The data of curve is base on TJ (PK) = 150°C; TCis variable depending on power level. Second breakdown pulse limits are valid for
duty cycles to 10% provided TJ (PK) ≤150°C, At high case temperatures, thermal limitation will reduce the power that can be handled
to values less than the limitations imposed by second breakdown.
Voltage (Volts)
IC, Collector Current (Amperes)
“ON” Voltage Collector Cut-off Region
IC, Collector Current (µA)
VBE, Base-Emitter Voltage (Volts)
Capacitance (pF)
Capacitances
VR, Reverse Voltage (Volts)
IB, Base Current (mA)
VCE, Collector Emitter Voltage (Volts)
Collector Saturation Region
Part Number Table
Description Part Number
PNP Power Transistor TIP42C
Disclaimer This data sheet and its content s (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes
in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied.
The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet
should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting
from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to
limit or restrict the Group's liability for death or personal injury resulting from its negligence. MULTICOMP is the registered trademark of the Group. @ Premier Farnell plc 2011.
