GaAs IRED & PHOTO-TRANSISTOR (TLP371) OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TELECOMMUNICATION SOLID STATE RELAY PROGRAMMABLE CONTROLLERS The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide infrared emitting diode optically coupled to a darlington connected photo-transistor which has an integrated base-emitter resistor to optimize switching speed and elevated temperature characteristics in a six lead plastic DIP package. TLP372 is no-base internal connection for high-EMI environments, Current Transfer Ratio : 1000% (Min.) (Ip=1mA) e Isolation Voltage : 5000Vrms (Min.) e UL Recognized : UL1577, File No. E67349 PIN CONFIGURATIONS (TOP VIEW) TLP371 TLP372 1 Ty 1 6 1 Tk 6 2028 N5 20-\ M5 30 rn 4 3q Ca 1; ANODE 1: ANODE 2: CATHODE 2 : CATHODE 3: NC 3: NC 4 : EMITTER 4 : EMITTER 5 : COLLECTOR 5 : COLLECTOR 6: BASE 6: NC 297 TLP3 71,372 Unit in mm 64 %lZ+t025 eo Ht 2.544025 162 F025 | [365 2 Af +01 025-005 A x 7.85 ~ 680 wo a JEDEC EIAJ TOSHIBA 11-7Al1 Weight : 0.4gTLP371,372 (1LP371) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT Forward Current Ip 60 mA a Forward Current Derating (Ta2 39C) Alp/C 0.7 mA/C a Peak Forward Current (100s pulse, 100pps) Ipp 1 A Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C Collector-Emitter Voltage VCEO 300 Vv Collector-Base Voltage (TLP371) VCBO 300 Vv 5 Emitter-Collector Voltage VECO 0.3 Vv Q Emitter-Base Voltage (TLP371) VEBO 7 Vv Ee Collector Current Ic 150 mA AlPower Dissipation Pc 300 mW Power Dissipation Derating (Ta 2 25C) APG /C 3.0 mW /C Junction Temperature Tj 125 C Storage Temperature Range Tstg 55~125 C Operating Temperature Range Topr 55~100 C Lead Soldering Temperature (10 sec.) T sold 260 C Total Package Power Dissipation Pr 350 mW Total Package Power Dissipation Derating (Ta2 25C) | aPyp/C -3.5 mW /C Isolation Voltage (AC, 1 min., RH=60%) (Note 1) BVs 5000 Vrms Note 1: Device considered a two terminal device : Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. 298 TLP371,372 (TLP371) INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL | TEST CONDITION | MIN. | TYP. |MAX.) UNIT a Forward Voltage VE Ip=10mA 1.0 |] 1.15] 1. Vv | Reverse Current Ir VR=5V = 10 | pA Capacitance Or V=0, f=1MHz _ 30} pF Collector-Emitter Breakdown Voltage V(BR)CEO | IC =0.1mA 300 | ~ Vv Emitter-Collector Breakdown Voltage V(BR)ECO | Tg =0.1mA 0.3 ~ ~~ Vv Collector-Base Ic=0. _ Breakdown Voltage (TLP371) V(BRICBO | 1=0.1mA 300 Vv rc| Emitter-Base Vv Ig =0.1mA 7/ V g Breakdown Voltage (TLP371) (BR)EBO |'E=0.1m 3 Vcp=200V | 10] 200 | na Collector Dark Current ICEO | VcoR@=200V a . _ _ 20 | pA Ta=85C VcoR=200V Collector Dark Current (TLP371) IceR |Ta=85C, _ 0.5 10 | A Rpp=10M2 Collector Dark Current (TLP371) Icpo | Vcg=200V _ OL); nA DC Forward Current Gain (TLP371) hFg Vcp=5V, IG=1l0mA | 7000) _ Capacitance (Collector to Emitter) CcE V=0, f=1MHz 10} pF COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |) MAX.! UNIT Current Transfer Ratio Ic/Ip Ip=lmA, VcR=1V 1000 | 4000} % Saturated CTR Ic /Ip(sat) |Ir=10mA, VoR=1V 500 | _ %o Base Photo-Current(TLP371) | Ipp Ip=imA, Vcp=1V _ 6) pA Collector-Emitter Ic =10mA, Ip=1lmA _ _ 1.0 Saturati Vex(sat) Fo Vv aturation Voltage Ic =100mA, Ip=10mA 03; 0.2 299 TLP371,372 (TLP371} ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. |MAX.| UNIT Capacitance c Vg=0, f=1MHz 0.8| F (Input to Output) 5 s=nr= , P Isolation Resistance Rg Vg =500V 5X10!) 104) 9) AC, 1 minute 5000 _ _ . Vrms Isolation Voltage BVS AC, 1 second |10000] DC, 1 minute ;10000; Vde SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX.| UNIT Rise Time tr = 40 _ Fall Time tf Voc=10V fis [ Ic =10mA us Turn-on Time ton Ry,=1002 _ 50 _ Turn-off Time toff 15 Turn-on Time toN Ry, = 1800 (Fig.1) _ 3 _ Storage Time ty RBE=OPEN 45 _ pS Turn-off Time torr |VCC= 10V, Ip=16mA 90 Turn-on Time tON Ry, = 1800 (Fig.1) 5 _ Storage Time ts Rpg =10MN (TLP371) 40 _ pS Turn-off Time tOFF Voc=1oV, Ip=16mA 80 Fig.1 SWITCHING TIME TEST CIRCUIT OVC ir_| L__ Ipo Ru __]| sy Vcc OVCE VCE ov 1V ton] | LtOFF RECOMMENDS OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. | TYP. | MAX. | UNIT Supply Voltage Vcc _- 200 Vv Forward Current Ip _ 16 25 | mA Collector Current Ic | 120 | mA Operating Temperature Topr -25 | 85 C 300 TLP371,372 {TLP371) Po - Ta 400 5 oe ti w& g = 5 Re oO es 2 2. Fo < Qe BE ne a BS my cae 160 Z ay 5 s4 g ge al eT < 0 < 0 ~20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) Ipp - DR ip VF PULSE WIDTH S100 ys = 50 = 5 Ta=25C E30 & o fe = 3 _ 10 < ge 5 5 Ba & 3 5 $= 5 oe 3 iQ a 1 4 < z = 0b EZ 03 a 107 a 107 a 107 3 10 ot DUTY CYCLE RATIO Dg 0.6 08 Lo 1.2 L4 16 18 FORWARD VOLTAGE VF () AVF/ 4Ta Ip Ipp VFP a < 2S g ES * as = & ze E BS z o> > <* o a 3b os >a = 10 a5 ry ae PULSE WIDTHS LOys zB a REPETITIVE FREQUENCY 58 g =100Hz me =) Ta = 26 bh a= 26C 4 1 0.1 0.305 1 a 10 30 50 0.6 1.0 14 18 2.2 26 3.0 FORWARD CURRENT Ip (mA) PULSE FOWARD VOLTAGE Vrp (V) 301 TLP371,372 (TLP374) COLLECTOR CURRENT Ic (mA) (ys) SWITCHING TIME 0.6 08 1.0 1.2 14 Ta= 25C { Tje=0.5mA 16 LB COLLECTOR-EMITTER VOLTAGE Yop (V) 2.0 SWITCHING TIME Ry, 1000- To TAT - - | a" FA Ta=25C 5001-4 4 [ Voc=10v 30o}- soos anion l . LorF Up = 16mA) 1oofL GinA) 50}- | a [| [i | 1.6mA) 10 ut finite Pe x / 5|- + 1 + a rr i | - it * LON Ups=lmaA) Lili EL | 30 50 1100 300 500 Ik 3k 5k | 10k LOAD RESISTANCE Ry, (0) 302 COLLECTOR CURRENT Ic {mA) CURRENT TRANSFER RATIO Ic/ip (%) Ht F ill | I FORWAFD CURRENT Ip (mA} 0 30 50 Iic/Ip lp Vcr=12V 1 0.3 0.5 1 3 10 30 50 FORWAFD CURRENT Tp (mA){TLP371) (uA IcEO COLLECTOR DARK CURRENT (mA) Ic COLLECTOR CURRENT ICEO VCE Ta =25C RRR = LOMO (TLP371) 10 30 50 1090 300 500 COLLECTOR-EMITTER VOLTAGE VcE () Ic Ta 120 _ VcE=lV Ip=10mA 80 60 40 20 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) 303 (uA) ICEO COLLECTOR DARK CURRENT Ic COLLECTOR CURRENT TLP371,372 ICEO - Ta 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) Ic - Ta VcE=lV [p=10mA _ -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C)