PD-90549D IRF9130 JANTX2N6804 JANTXV2N6804 REPETITIVE AVALANCHE AND dv/dt RATED (R) HEXFET TRANSISTORS THRU-HOLE -TO-204AE (TO-3) REF:MIL-PRF-19500/562 100V, P-CHANNNEL Product Summary Part Number BVDSS IRF9130 -100V RDS(on) 0.30 ID -11A The HEXFET(R)technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low onstate resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features: n n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25C ID @ VGS = 0V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units -11 -7.0 -44 75 0.60 20 207 -11 7.5 -5.5 -55 to 150 A W W/C V mJ A mJ V/ns C 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical) g For footnotes refer to the last page www.irf.com 1 09/25/15 IRF9130 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) BVDSS BVDSS/TJ Parameter Min Drain-to-Source Breakdown Voltage -100 Typ Max Units -- -- V -- -0.087 -- V/C -- -- -2.0 3.0 -- -- -- -- -- -- -- -- 0.30 0.35 -4.0 -- -25 -250 VGS(th) g fs IDSS Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -100 100 29 7.1 21 60 140 140 140 -- C iss C oss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 860 350 125 -- -- RDS(on) Test Conditions VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA nC VGS = -10V, ID = -7.0A VGS = -10V, ID = -11A VDS = VGS, ID = -250A VDS = -15V, IDS = -7.0A VDS = -80V, VGS = 0V VDS = -80V VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -10V, ID = -11A VDS = -50V ns VDD = -50V, ID = -11A, VGS = -10V, RG = 7.5 V S A nA nH Measured from the center of drain pad to center of source pad pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) -- -- -- -- -11 -44 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- -- -- -- -- -- -4.7 250 3.0 V ns C ton Forward Turn-On Time Test Conditions Tj = 25C, IS =-11A, VGS = 0V Tj = 25C, IF =-11A, di/dt -100A/s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction to Case Junction-to-Ambient Min Typ Max Units -- -- -- -- 1.67 30 C/W Test Conditions soldered to a 2" square copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRF9130 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF9130 13 a& b 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRF9130 RD V DS VGS D.U.T. RG + V DD -10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF9130 500 D.U.T RG -20V -10V IAS tp VDD A DRIVER 0.01 15V Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) L VDS 450 BOTTOM ID -4.9A -7.0A -11A 100 125 TOP 400 350 300 250 200 150 100 50 0 25 I AS 50 75 150 Starting T J , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -10V QGS 50K -12V 12V .2F .3F QGD VG D.U.T. +VDS VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com IRF9130 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, Peak IL = -11A, VGS = -10V, L = 3.4mH ISD -11A, di/dt -140A/s, VDD -100V, TJ 150C Suggested RG =7.5 Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions --TO-204AE (TO-3) IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/2015 www.irf.com 7