TGA2525 2-18 GHz Low Noise Amplifier with AGC Key Features * * * * * * * * * * Measured Performance Primary Applications * * * 10 20 9 18 8 16 7 NF 14 6 Gain 12 5 10 4 8 3 6 2 4 1 2 0 0 4 6 8 10 12 14 16 18 Gain, IRL, ORL (dB) Frequency (GHz) 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 Gain IRL ORL Wideband Gain Block / LNA X-Ku Point to Point Radio Electronic Warfare Applications Product Description Gain (dB) NF (dB) Bias conditions: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V, Vg2 = +1.3 V Typical 2 Frequency Range: 2 - 18 GHz Midband NF: 2 dB Gain: 17 dB >30 dB adjustable gain with Vg2 TOI: 29 dBm Typical 22 dBm Nominal Psat, 18 dBm Nominal P1dB ESD Protection circuitry on Vg1 & Vg2 Bias: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V, Vg2 = +1.3 V, Typical Technology: 3MI 0.15 um Power pHEMT Chip Dimensions: 2.09 x 1.35 x 0.1 mm The TriQuint TGA2525 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-18 GHz and is designed using TriQuint's proven standard 0.15 um Power pHEMT production process. The TGA2525 provides a nominal 18 dBm of output power at 1 dB gain compression with a small signal gain of 17 dB. Greater than 30 dB adjustable gain can be achieved using Vg2 pin. Typical noise figure is 2 dB at 8 GHz. Special circuitry on both Vg1 and Vg2 pins provides ESD protection. The TGA2525 is suitable for a variety of wideband systems such as point to point radios, radar warning receivers and electronic counter measures. The TGA2525 is 100% DC and RF tested on-wafer to ensure performance compliance. The TGA2525 has a protective surface passivation layer providing environmental robustness. 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Lead-Free & RoHS compliant. Evaluation Boards are available upon request. Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D 1 TGA2525 Table I Absolute Maximum Ratings 1/ Symbol Parameter Vd-Vg Value Drain to Gate Voltage 10 V Vd Drain Voltage 7V Vg1 Vg2 Gate #1 Voltage Range Gate #2 Voltage Range Notes 2/ -2 to 0 V -2 to +3 V Id Drain Current Ig1 Ig2 Gate #1 Current Range Gate #2 Current Range Pin Input Continuous Wave Power 144 mA 2/ -24 to 24 mA -24 to 24 mA 3/ 22 dBm 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. 3/ ESD protection diodes on both Vg1 and Vg2 will conduct current for voltages approaching turn-on voltages. Diode turn-on voltage levels will decrease with decreasing temperature. Table II Recommended Operating Conditions Symbol Value Vd Drain Voltage 5V Id Drain Current 75 mA Drain Current under RF Drive 130 mA Id_Drive Vg1 Vg2 1/ Parameter 1/ Gate #1 Voltage Gate #2 Voltage -0.6 V 1.3 V See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D TGA2525 Table III RF Characterization Table Bias: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V, Vg2 = +1.3 V typical SYMBOL PARAMETER TEST CONDITIONS MIN NOMINAL MAX UNITS Gain Small Signal Gain f = 2 -14 GHz f = 14 - 18 GHz 14 14 17 17 - dB IRL Input Return Loss f = 2 GHz f = 3 - 14 GHz f = 14 - 18 GHz 8.5 10 10 15 15 12 - dB ORL Output Return Loss f = 2 - 3 GHz f = 4 - 18 GHz 9 10 15 15 - dB Psat Saturated Output Power f = 2 - 14 GHz f = 14 - 18 GHz - 22 20 - dBm P1dB Output Power @ 1dB Compression f = 2 GHz f = 4, 8 GHz f = 10, 14 GHz f = 18 GHz 14 15 13 11 18 17 17 15 - dBm TOI Output TOI f = 2 - 14 GHz f = 14 - 18 GHz - 29 25 - dBm NF Noise Figure f = 2 - 14 GHz f = 14 - 18 GHz - 2 4 4 6 dB S21 Temperature Dependence f = 2 - 18 GHz - -0.008 - dB / C S21/T 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D TGA2525 Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Notes Tbaseplate = 70 C Pd = 1.01 W Tchannel = 96 C Tm = 9.7 E+8 Hrs 1/ 2/ Thermal Resistance, jc Vd = 5 V Id = 75 mA Pd = 0.375 W jc = 41.4 (C/W) Tchannel = 86 C Tm = 4.3 E+9 Hrs Thermal Resistance, jc Under RF Drive Vd = 5 V Id = 120 mA Pout = 22 dBm Pd = 0.45 W jc = 41.4 (C/W) Tchannel = 89 C Tm = 2.7 E+9 Hrs Maximum Power Dissipation Mounting Temperature 30 Seconds 320 C Storage Temperature 1/ -65 to 150 C For a median life of 1E+6 hours, Power Dissipation is limited to Pd(max) = (150 C - Tbase C)/jc. Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Power De-rating Curve 1.2 Power Dissipation (W) 2/ 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 Baseplate Temp (C) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D TGA2525 Measured Data Bias conditions: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V, Vg2 = +1.3 V Typical 25 Gain (dB) 20 15 10 5 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Input RL and Output RL (dB) 0 -10 -20 IRL -30 ORL -40 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D TGA2525 Measured Data Bias conditions: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V, Vg2 = +1.3 V Typical 30 Gain tuned at Freq = 8 GHz by adjusting Vg2 20 S21 (dB) Id = 75 mA, Vg2= +1.3 V Id = 40.6 mA, Vg2= -0.42 V 10 Id = 29.7 mA, Vg2= -0.64 V Id = 22.2 mA, Vg2= -0.73 V 0 Id = 16.2 mA, Vg2= -0.8 V Id = 11.4 mA, Vg2= -0.85 V Id = 7.7 mA, Vg2= -0.89 V Id = 5 mA, Vg2= -0.93 V -10 -20 0 5 10 15 20 10 20 9 18 8 16 7 NF 14 6 Gain 12 5 10 4 8 3 6 2 4 1 2 0 0 2 4 6 8 10 12 14 16 Gain (dB) NF (dB) Freq (GHz) 18 Frequency (GHz) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D TGA2525 Measured Data Bias conditions: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V, Vg2 = +1.3 V Typical 30 150 125 Gain @ 8 GHz Id @ 8 GHz 20 100 15 75 10 50 5 25 0 0 -10 -8 -6 -4 -2 0 2 4 6 8 Id (mA) Pout (dBm), Gain (dB) Pout @ 8 GHz 25 10 Pin (dBm) 30 Pout (dBm) 25 20 15 Psat 10 P1dB 5 0 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D TGA2525 Measured Data Bias conditions: Vd = 5 V, Id = 75 mA, Vg1 = -0.6 V, Vg2 = +1.3 V Typical 35 OTOI (dBm) 30 25 8 GHz 20 15 10 5 0 2 4 6 8 10 12 14 16 Pout / tone (dBm) OTOI (dBm) @ Pin = -8 dBm 40 Vg2 = +1.3V Vg2 = -0.42 V Vg2 = -0.64 V Vg2 = -0.73 V Vg2 = -0.80 V 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D TGA2525 Electrical Schematic Vd 100 pF RF In 0.01 uF RF Out TGA2525 0.01 uF 100 pF 100 pF Vg1 0.01 uF Vg2 Bias Procedures Bias-up Procedure Bias-down Procedure Vg1 set to -1.5 V Reduce Vg2 to +1 V Vd set to +5 V Turn off RF supply Vg2 set to +1 V Reduce Vg1 to -1.5V. Ensure Id ~ 0 mA Adjust Vg1 more positive until Id is 75 mA. This will be ~ Vg1 = -0.6 V Vg2 to 0 V Apply RF signal to input Turn Vd to 0 V Adjust Vg2 to obtain desired gain. Turn Vg1 to 0 V 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D TGA2525 1.208 2 3 4 1.983 0.742 1.351 1.242 0.104 Mechanical Drawing 1.212 1.230 1.131 5 0.968 6 0.099 0.390 1 0.230 0.000 0.095 1.971 2.091 0.000 Units: millimeters Thickness: 0.10 Die x,y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad #1 RF In 0.090 x 0.148 Bond Pad #4 Vd1 0.100 x 0.125 Bond Pad #2 Vg2 0.090 x 0.090 Bond Pad #5 RF Out 0.090 x 0.148 Bond Pad #3 Vd2 (Not used) 0.125 x 0.100 Bond Pad #6 Vg1 0.090 x 0.090 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D TGA2525 Recommended Assembly Diagram Vd Vg2 0.01 uF 0.01 uF 100 pF 100 pF RF Out RF In 100 pF 0.01 uF Vg1 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D TGA2525 Assembly Notes Component placement and adhesive attachment assembly notes: * Vacuum pencils and/or vacuum collets are the preferred method of pick up. * Air bridges must be avoided during placement. * The force impact is critical during auto placement. * Organic attachment (i.e. epoxy) can be used in low-power applications. * Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: * Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum. * An alloy station or conveyor furnace with reducing atmosphere should be used. * Do not use any kind of flux. * Coefficient of thermal expansion matching is critical for long-term reliability. * Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: * Thermosonic ball bonding is the preferred interconnect technique. * Force, time, and ultrasonics are critical parameters. * Aluminum wire should not be used. * Devices with small pad sizes should be bonded with 0.0007-inch wire. Ordering Information Part ECCN Package Style TGA2525 EAR99 GaAs MMIC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com October 2008 (c) Rev D Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TriQuint: TGA2525