©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC945
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 150 mA
PCCollector Power Dissipation 250 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Voltage IC=100µA, IE=0 60 V
BVCEO Collect or-E mitter Break down Voltage IC=10mA, IB=0 50 V
BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
ICBO Collector Cut-off Current VCB=40V, IE=0 0.1 µA
IEBO Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
hFE DC Current Gain VCE=6V, IC=1.0mA 40 700
VCE (sat) Collector-Emitter Saturat ion Voltage IC=100mA, IB=10mA 0.15 0.3 V
fTCurrent Gain Bandwidth Product VCE=6V, IC=10mA 300 MHz
Cob Output Capacitance VCB=6V, IE=0, f=1MHz 2.5 pF
NF Noise Figure VCE=6V, IC=0.5mA
f=1KHz, RS=500Ω4.0 dB
Classification R O Y G L
hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
KSC945
Audio Frequency Amplifier & High
Frequency OSC.
• Complement to KSA733
• Collector-Base Voltage : VCBO=60V
• High Current Gain Bandwidth Product : fT=300MHz (TYP)
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
1
©2002 Fairchild Semiconductor Corporation
KSC945
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Transfer Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5 . Output Capac i tance Figur e 6. Current Gain Bandwid th Product
0 2 4 6 8 10 12 14 16 18 20
0
20
40
60
80
100
IB = 400µAIB = 350µA
IB = 300µA
IB = 200µA
IB = 150µA
IB = 100µA
IB = 250µA
IB = 50µA
IC[mA], COLLECTOR CURRENT
VCE[V], C OLLECTOR-EMI TTER VOL TAGE
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
VCE = 6V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
10
100
1000
VCE = 6V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10 IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
1 10 100 1000
0.1
1
10
100
IE = 0
f = 1MHz
Cob [pF] , CAP ACI T ANCE
VCB [V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
VCE = 6V
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
KSC945
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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