Ku-Band VSAT Packaged Amplifier TGA2508-SM Key Features * * * * * * * Bottom View Top View Preliminary Measured Data Primary Applications Bias Conditions: Vd = 7 V, Id = 433 mA 30 S-Parameter (dB) 20 GAIN 10 0 Typical Frequency Range: 12 - 19 GHz 25 dB Nominal Gain 29 dBm Nominal P1dB Bias Conditions: 7 V, 433 mA pHEMT Technology Surface mount package Package Dimensions: 4.0 x 4.0 x 0.9 mm * VSAT Ground Terminals * Point to Point Radio * Military Ku Band * Ku-Band Space ORL -10 -20 IRL -30 -40 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 35 P1dB (dBm) 30 25 20 Evaluation Boards are available upon request. 15 Lead-free and RoHS compliant 10 12 13 14 15 16 17 18 19 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com December 2009 (c) Rev B TGA2508-SM TABLE I ABSOLUTE MAXIMUM RATINGS 1/ SYMBOL V+ - PARAMETER Positive Supply Voltage VALUE 8V V Negative Supply Voltage Range -2 to 0 V I+ Positive Supply Current (Quiescent) 591 mA | IG | Gate Supply Current 16 mA PIN Input Continuous Wave Power PD Power Dissipation 4.7 W Operating Channel Temperature 200 C Mounting Temperature (30 Seconds) 260 C Tchannel NOTES Storage Temperature 17 dBm 2/ -65 to 150 C 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com December 2009 (c) Rev B TGA2508-SM TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC 5oC) PARAMETER TYPICAL UNITS 12 - 19 GHz 7 V Quiescent Current 433 mA Small Signal Gain 25 dB Input Return Loss (Linear Small Signal) 15 dB Output Return Loss (Linear Small Signal 7 dB Output Power @ 1 dB Compression Gain 29 dBm Frequency Range Drain Operating TABLE III THERMAL INFORMATION PARAMETER TEST CONDITIONS Tchannel (C) JC (C/W) Tm (HRS) 143 24.1 1.8 E+6 Vd = 7 V ID = 433 mA Pd = 3.03 W JC Thermal Resistance (Channel to Case) Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case Temperature @ 70 OC Median Lifetime (Tm) vs. Channel Temperature 1.E+13 Median Lifetime (Hours) 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 FET3 25 50 75 100 125 150 175 200 Channel Temperature ( C) 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com December 2009 (c) Rev B TGA2508-SM Preliminary Measured Data Bias Conditions: Vd = 5 - 7 V, Id = 433 mA 32 30 5V 6V 28 26 7V Gain (dB) 24 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 32 P1dB (dBm) 31 30 7V 29 6V 28 5V 27 26 25 24 23 22 12 13 14 15 16 17 18 19 Frequency (GHz) 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com December 2009 (c) Rev B TGA2508-SM Preliminary Measured Data Bias Conditions: Vd = 5 - 7 V, Id = 433 mA 0 -5 6V Input Return Loss (dB) -10 -15 5V -20 -25 -30 -35 7V -40 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 0 -5 7V 6V Output Return Loss (dB) -10 -15 -20 -25 -30 5V -35 -40 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com December 2009 (c) Rev B TGA2508-SM Package Pinout Diagram 10 11 12 1 9 TGA 2508-SM 13 8 2 7 3 6 Top Side 5 4 Bottom Side Dot indicates Pin 1 Pin Description 1 GND 2 RF Input 3 GND 4 Vg 5,6 NC 7 GND 8 RF Output 9 GND 10 Vd 11,12 NC 13 GND 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com December 2009 (c) Rev B TGA2508-SM Mechanical Drawing (Bottom Side) 10 11 12 9 1 13 8 2 2.41 x 2.41mm Die Attach Pad 7 3 6 5 4 Thickness Units: Millimeters Package tolerance: +/- 0.10 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com December 2009 (c) Rev B TGA2508-SM Recommended Board Layout Assembly 1 uF 1206 cap 100 pF 0402 cap Board material is RO4003, 0.008 in thick 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com December 2009 (c) Rev B Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 C/sec 3 C/sec Activation Time and Temperature 60 - 120 sec @ 140 - 160 C 60 - 180 sec @ 150 - 200 C Time above Melting Point 60 - 150 sec 60 - 150 sec Max Peak Temperature 240 C 260 C Time within 5 C of Peak Temperature 10 - 20 sec 10 - 20 sec Ramp-down Rate 4 - 6 C/sec 4 - 6 C/sec Ordering Information Part Package Style TGA2508-SM QFN 12L 4x4 Surface Mount 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com December 2009 (c) Rev B