TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
December 2009 © Rev B
10
15
20
25
30
35
12 13 14 15 16 17 18 19
Frequency (GHz)
P1dB (dBm)
Ku-Band VSAT Packaged Amplifier TGA2508-
SM
Key Features
• Typical Frequency Range: 12 - 19 GHz
• 25 dB Nominal Gain
• 29 dBm Nominal P1dB
• Bias Conditions: 7 V, 433 mA
• pHEMT Technology
• Surface mount package
• Package Dimensions:
4.0 x 4.0 x 0.9 mm
Primary Applications
• VSAT Ground Terminals
• Point to Point Radio
• Military Ku Band
• Ku-Band Space
Preliminary Measured Data
Bias Conditions: Vd = 7 V, Id = 433 mA
GAIN
Top View Bottom View
-40
-30
-20
-10
0
10
20
30
10 11 12 13 14 15
16
17 18 19 20
Frequency (GHz
)
S-Parameter (dB)
ORL
IRL
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
Evaluation Boards are available upon
request.
Lead-free and RoHS compliant
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
2
December 2009 © Rev B
TABLE I
ABSOLUTE MAXIMUM RATINGS 1/
SYMBOL
PARAMETER VALUE NOTES
V
+
Positive Supply Voltage 8 V
V
-
Negative Supply Voltage Range -2 to 0 V
I
+
Positive Supply Current (Quiescent) 591 mA
| I
G
|
Gate Supply Current 16 mA
P
IN
Input Continuous Wave Power 17 dBm
P
D
Power Dissipation 4.7 W
Tchannel
Operating Channel Temperature 200 °C 2/
Mounting Temperature (30 Seconds) 260 °C
Storage Temperature -65 to 150 °C
1/ These ratings represent the maximum operable values for this device. Str
esses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device
lifetime. These are stress ratings only, and functional operation of the device at these conditions is not
implied.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
TGA2508-SM
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
December 2009 © Rev B
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
o
C ± 5
o
C)
PARAMETER TYPICAL UNITS
Frequency Range 12 - 19 GHz
Drain Operating 7 V
Quiescent Current 433 mA
Small Signal Gain 25 dB
Input Return Loss (Linear Small Signal) 15 dB
Output Return Loss (Linear Small Signal 7 dB
Output Power @ 1 dB Compression Gain 29 dBm
TABLE III
THERMAL INFORMATION
PARAMETER TEST CONDITIONS Tchannel
(°C)
θ
θθ
θ
JC
(°
°°
°C/W)
Tm
(HRS)
θ
JC
Thermal Resistance
(Channel to Case)
Vd = 7 V
I
D
= 433 mA
Pd = 3.03 W
143 24.1 1.8 E+6
Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case
Temperature @ 70
O
C
TGA2508-SM
Median Lifetime (Tm) vs. Channel Temperature
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
25 50 75 100 125 150 175 200
Channel Temperature ( C)
Median Lifetime (Hours)
FET3
°
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
4
December 2009 © Rev B
Preliminary Measured Data
Bias Conditions: Vd = 5 - 7 V, Id = 433 mA
10
12
14
16
18
20
22
24
26
28
30
32
10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Gain (dB)
5V
6V
7V
22
23
24
25
26
27
28
29
30
31
32
12 13 14 15 16 17 18 19
Frequency (GHz)
P1dB (dBm)
5V
6V
7V
TGA2508-SM
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
5
December 2009 © Rev B
Preliminary Measured Data
Bias Conditions: Vd = 5 - 7 V, Id = 433 mA
-40
-35
-30
-25
-20
-15
-10
-5
0
10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Input Return Loss (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Output Return Loss (dB)
5V
6V
7V
5V
6V7V
TGA2508-SM
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
6
December 2009 © Rev B
Package Pinout Diagram
Top Side
Dot indicates Pin 1
Bottom Side
13
4
10
TGA
2508-SM
12
11
1
2
3
9
8
5
7
6
TGA2508-SM
GND13
NC11,12
Vd10
GND9
RF Output8
GND7
NC5,6
Vg4
GND3
RF Input2
GND1
DescriptionPin
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
7
December 2009 © Rev B
2.41 x 2.41mm Die Attach Pad
1
2
3
4
5
6
7
8
9
10 11 12
13
Thickness
Mechanical Drawing
(Bottom Side)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Units: Millimeters
Package tolerance: +/- 0.10
TGA2508-SM
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
8
December 2009 © Rev B
Recommended Board Layout Assembly
Board material is RO4003, 0.008 in thick
TGA2508-SM
1 uF 1206 cap
100 pF 0402 cap
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
9
December 2009 © Rev B
Ordering Information
Part Package Style
TGA2508-SM QFN 12L 4x4 Surface Mount
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages.
Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.
Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.
Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile SnPb Pb Free
Ramp-up Rate 3 °C/sec 3 °C/sec
Activation Time and
Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C
Time above Melting Point 60 – 150 sec 60 – 150 sec
Max Peak Temperature 240 °C 260 °C
Time within 5 °C of Peak
Temperature 10 – 20 sec 10 – 20 sec
Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec
