PZT2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 6
www.unisonic.com.tw QW-R207-001.C
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 0.6 A
Total Device Dissipation PC 1 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device op eration is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (Ta=25℃, unless otherwise noted)
PARAMETER SYMBOL RATINGS UNIT
Thermal resistance, junction to Ambient θJA 125
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 75 V
Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 40 V
Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V
Collector Cut-off Current ICEO V
CE=60V, VEB(OFF)=3.0V 10 nA
Collector Cut-Off Current ICBO VCB=60V, IE=0
VCB=60V,IE=0, Ta=150℃ 0.01
10 μA
μA
Emitter Cut-Off Current IEBO V
EB=3.0V, IC=0 10 nA
Base Cut-Off Current IBL V
CE=60V, VEB(OFF)=3.0V 20 nA
ON CHARACTERISTICS
DC Current Gain hFE
IC=0.1mA, VCE=10V
IC=1.0mA, VCE=10V
IC=10mA, VCE=10V
IC=10mA, VCE=10V, Ta=-55℃
IC=150mA, VCE=10V*
IC=150mA, VCE=1.0V*
IC=500mA, VCE=10V*
35
50
75
35
100
50
40
300
Collector-Emitter Saturation Voltage* VCE(SAT) IC=150mA, IB=15mA
IC=500mA, IB=50mA 0.3
1.0 V
V
Base-Emitter Saturation Voltage* VBE(SAT) IC=150mA, IB=15mA
IC=500mA, IB=50mA 0.6 1.2
2.0 V
V
SMALL SIGNAL CHARACTERISTICS
Transition Freq uency fT I
C=20mA, VCE=20V, f=100MHz 300 MHz
Output Capacitance Cobo VCB=10V, IE=0, f=100kHz 8.0 pF
Input Capacitance Cibo VEB=0.5V, IC=0, f=100kHz 25 pF
Collector Base Time Constant rb'Cc IC=20mA, VCB=20V, f=31.8MHz 150 pS
Noise Figure NF IC=100μA, VCE=10V, RS=1.0kΩ,
f=1.0kHz
4.0 dB
Real Part of Common-Emitter High
Frequency Input Impedance Re(hje) IC=20mA, VCB=20V, f=300MHz
60 Ω